Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

Paper details

Research paper

Experimental GrowthExperimental Characterization

Shichen Zhang, Li Liu, Kai Guo, Xingli Mu et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation1 characterization3 properties1 figure

ExperimentalInAsStudied MaterialInPSubstrate / Dielectric

2 preparations3 characterizations3 properties1 figure

ExperimentalInAsStudied MaterialInPSubstrate / Dielectric

InAs

Studied Material

studied material

InP

Substrate / Dielectric

substrate or dielectric

TMIn

Related documents with shared materials, methods, properties, or citations.

Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP buffer thickness	500nm	InP	Crystallized InAs quantum dots on a bare InP substrate produ	—
Nucleation Density	indium droplet density	300000000cm⁻²	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Diameter	average diameter	45nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Height	average height	8nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Nucleation Density	QD density	100000cm⁻²	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—
Fet On Off Ratio	g(2)(0)	0.16	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP buffer thickness	500nm	InP	Crystallized InAs quantum dots on a bare InP substrate produ	—
Nucleation Density	indium droplet density	300000000cm⁻²	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Diameter	average diameter	45nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Height	average height	8nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Nucleation Density	QD density	100000cm⁻²	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—
Fet On Off Ratio	g(2)(0)	0.16	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP buffer thickness	500nm	InP	Crystallized InAs quantum dots on a bare InP substrate produ	—
Nucleation Density	indium droplet density	300000000cm⁻²	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Diameter	average diameter	45nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Height	average height	8nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Nucleation Density	QD density	100000cm⁻²	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—
Fet On Off Ratio	g(2)(0)	0.16	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP buffer thickness	500nm	InP	Crystallized InAs quantum dots on a bare InP substrate produ	—
Nucleation Density	indium droplet density	300000000cm⁻²	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Diameter	average diameter	45nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Particle Height	average height	8nm	InAs	Indium droplets formed on a bare InP substrate before arseni	—
Nucleation Density	QD density	100000cm⁻²	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—
Fet On Off Ratio	g(2)(0)	0.16	InAs	Crystallized InAs quantum dots on a bare InP substrate produ	—