Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Energy–time entanglement from a monolithically integrated quantum dot on silicon

High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

A single spin in hexagonal boron nitride for vectorial quantum magnetometry

Deterministic hBN bubbles as a versatile platform for studies on single-photon emitters

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Energy–time entanglement from a monolithically integrated quantum dot on silicon

High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

A single spin in hexagonal boron nitride for vectorial quantum magnetometry

Deterministic hBN bubbles as a versatile platform for studies on single-photon emitters

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Energy–time entanglement from a monolithically integrated quantum dot on silicon

High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

A single spin in hexagonal boron nitride for vectorial quantum magnetometry

Deterministic hBN bubbles as a versatile platform for studies on single-photon emitters

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Energy–time entanglement from a monolithically integrated quantum dot on silicon

High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

A single spin in hexagonal boron nitride for vectorial quantum magnetometry

Deterministic hBN bubbles as a versatile platform for studies on single-photon emitters

Controlled epitaxy of room-temperature quantum emitters in gallium nitride