Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Directly bonded InP-based photonic crystal nanolaser on Si with buried heterostructure active region and lateral p-i-n junction; representative electrically driven device studied for threshold and thermal behavior.