Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations
6 preparations1 characterization1 figure
3 preparations1 characterization4 properties1 figure
2 preparations3 properties
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Excited-State Trions in a Quantum Well
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Two-dimensional optomechanical crystal resonator in gallium arsenide
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations
6 preparations1 characterization1 figure
3 preparations1 characterization4 properties1 figure
2 preparations3 properties
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Excited-State Trions in a Quantum Well
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Two-dimensional optomechanical crystal resonator in gallium arsenide
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations
6 preparations1 characterization1 figure
3 preparations1 characterization4 properties1 figure
2 preparations3 properties
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Excited-State Trions in a Quantum Well
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Two-dimensional optomechanical crystal resonator in gallium arsenide
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations
6 preparations1 characterization1 figure
3 preparations1 characterization4 properties1 figure
2 preparations3 properties
Related documents with shared materials, methods, properties, or citations.
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Site-controlled quantum dot arrays edge-coupled to integrated silicon nitride waveguides and devices
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Excited-State Trions in a Quantum Well
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Two-dimensional optomechanical crystal resonator in gallium arsenide
Operation of Cs-Sb-O activated GaAs in a high voltage DC electron gun at high average current
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
