Patent
US 11,031,240Method for Growing Gallium Nitride Based on Graphene and Magnetron Sputtered Aluminum Nitride
Jincheng Zhang
US
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Patent
Atlas literature
Patent
US 11,031,240Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-20. Canceled
Canceled
A method for growing gallium nitride, comprising: spreading graphene over a substrate; magnetron sputtering an aluminum nitride onto the graphene-coated substrate, to obtain a substrate sputtered with aluminum nitride; placing the substrate sputtered with aluminum nitride in a metal organic chemical vapor deposition (MOCVD) reaction chamber and heat treating the substrate to obtain the heat-treated substrate; growing an aluminum nitride transition layer on the heat-treated substrate; and growing a first gallium nitride layer and a second gallium nitride layer on the heat-treated substrate, respectively; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the step of magnetron sputtering an aluminum nitride on the substrate comprises: placing the graphene-coated silicon substrate into a magnetron sputtering system; and introducing nitrogen gas and argon gas into the reaction chamber of the magnetron sputtering system; and with 5 N purity aluminum as target material, sputtering an aluminum nitride on the graphene-coated substrate by radio frequency (RF) magnetron sputtering, to obtain the substrate sputtered with aluminum nitride; wherein the step of growing the aluminum nitride transition layer comprises: sequentially introducing hydrogen gas, ammonia gas and aluminum 2 source in the MOCVD reaction chamber, and growing the aluminum nitride buffer layer at low temperature; under an atmosphere of hydrogen gas, ammonia gas and aluminum source, heating the reaction chamber, and growing the aluminum nitride transition layer by using a pulsed MOCVD growth process, to obtain an aluminum nitride substrate; wherein the pulsed MOCVD growth process comprises: in one pulse period T₁+T₂ of growing aluminum nitride, introducing ammonia gas in T 1 time; not introducing ammonia gas in T₂ time; and repeating multiple pulse periods; wherein, the flow rate of aluminum source is 5-100 mmol/min, and the flow rate of ammonia gas is 100-5000 s c cm. Previously presented
The method of claim 21, wherein the substrate is a silicon substrate. Previously presented
The method according to claim 21, wherein the substrate is a first substrate; and the step of spreading graphene over the substrate comprises: growing a single layer of graphene on a second metal substrate; and removing the second metal substrate; and transferring the single layer of graphene onto said first substrate to obtain the graphene-coated substrate. Previously presented
The method according to claim 21, wherein the graphene spread on the substrate has a thickness of 0.34 nm to 34 nm or 1 to 100 carbon atom layers. Previously presented
The method of claim 21 wherein the thickness of the magnetron sputtered aluminum nitride on the substrate is 30 to 100 nm. Previously presented
The method according to claim 21, wherein the step of heat treating comprises: after placing the substrate sputtered with aluminum nitride in the MOCVD reaction chamber, introducing a mixed gas of hydrogen gas and ammonia gas into the reaction chamber; and after introducing the mixed gas of hydrogen gas and ammonia gas, heating the reaction chamber, and heat treating the substrate sputtered with the aluminum nitride, to obtain the heat-treated substrate. Previously presented
The method of claim 21 wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; the step of growing the first gallium nitride layer and the second gallium nitride layer comprises: growing the first gallium nitride layer; and then growing the second gallium nitride layer on the substrate on which a low V -III ratio gallium nitride layer is grown; or growing the second long gallium nitride layer; and then growing the first gallium nitride layer on the substrate on which a high V -III ratio gallium nitride layer is grown. Previously presented
. Canceled
The method according to claim 24, wherein the aluminum nitride transition layer has a thickness of 5 to 50 nm. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the first gallium nitride layer comprises: reducing the pressure in the MOCVD reaction chamber to 20 Torr; reducing the temperature to 1000 0 C; and sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and the gallium source, growing, on the aluminum nitride substrate, a low V -III ratio gallium nitride epitaxial layer by using chemical vapor deposition method, and then obtaining a low V -III ratio gallium nitride substrate. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the second gallium nitride layer comprises: maintaining the temperature of the MOCVD reaction chamber at 1000 C; increasing the pressure in the reaction chamber to 40 Torr; sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and gallium source, growing a high-V- Ill ratio gallium nitride epitaxial layer on the low V -III ratio gallium nitride substrate by using chemical vapor deposition method; and reducing the temperature of the reaction chamber to room temperature; and then taking out the sample, to obtain a silicon-based gallium nitride based on 4 graphene and magnetron sputtered aluminum nitride. Previously presented
. Canceled
. Canceled
;; °;;;-. Canceled
A gallium nitride film, comprising the following structures in order from bottom to top: a substrate, a graphene layer, an aluminum nitride nucleation layer formed by a magnetron sputtering method, a first gallium nitride layer, and a second gallium nitride layer; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the gallium nitride fi lm further comprises an aluminum nitride SVG 16083255.04-26-2021.KNYSJJCWDFLYX10.CLM.1.svg 0.12 0.08 Black and white transition layer located between the aluminum nitride nucleation layer and the first gallium nitride layer. Previously presented
The gallium nitride film according to claim 38, wherein the substrate is a silicon substrate. Previously presented
. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials5 process steps
Method for growing GaN on silicon substrate using transferred graphene, RF magnetron sputtered AlN nucleation layer (30-100 nm), pulsed MOCVD AlN transition layer, then sequential growth of low V-III ratio GaN epitaxial layer and high V-III ratio GaN epitaxial layer. Graphene is grown on copper by CVD, metal substrate removed by etching in FeCl₃/HCl solution, then transferred to silicon substrate. AlN sputtered using 5N purity Al target with N₂ and Ar at 1 Pa chamber pressure. Heat treatment at ~600°C for 20 min under H₂/NH3. AlN buffer grown at 650°C, AlN transition layer grown at 1050°C by pulsed MOCVD (T1=12s with NH3, T2=6s without NH3, 200 cycles). Low V-III GaN grown at 20 Torr, 1000°C; high V-III GaN grown at 40 Torr, 1000°C.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride film on substrate
Materials described outside the worked examples.
silicon substrate
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34–34 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,031,240Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-20. Canceled
Canceled
A method for growing gallium nitride, comprising: spreading graphene over a substrate; magnetron sputtering an aluminum nitride onto the graphene-coated substrate, to obtain a substrate sputtered with aluminum nitride; placing the substrate sputtered with aluminum nitride in a metal organic chemical vapor deposition (MOCVD) reaction chamber and heat treating the substrate to obtain the heat-treated substrate; growing an aluminum nitride transition layer on the heat-treated substrate; and growing a first gallium nitride layer and a second gallium nitride layer on the heat-treated substrate, respectively; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the step of magnetron sputtering an aluminum nitride on the substrate comprises: placing the graphene-coated silicon substrate into a magnetron sputtering system; and introducing nitrogen gas and argon gas into the reaction chamber of the magnetron sputtering system; and with 5 N purity aluminum as target material, sputtering an aluminum nitride on the graphene-coated substrate by radio frequency (RF) magnetron sputtering, to obtain the substrate sputtered with aluminum nitride; wherein the step of growing the aluminum nitride transition layer comprises: sequentially introducing hydrogen gas, ammonia gas and aluminum 2 source in the MOCVD reaction chamber, and growing the aluminum nitride buffer layer at low temperature; under an atmosphere of hydrogen gas, ammonia gas and aluminum source, heating the reaction chamber, and growing the aluminum nitride transition layer by using a pulsed MOCVD growth process, to obtain an aluminum nitride substrate; wherein the pulsed MOCVD growth process comprises: in one pulse period T₁+T₂ of growing aluminum nitride, introducing ammonia gas in T 1 time; not introducing ammonia gas in T₂ time; and repeating multiple pulse periods; wherein, the flow rate of aluminum source is 5-100 mmol/min, and the flow rate of ammonia gas is 100-5000 s c cm. Previously presented
The method of claim 21, wherein the substrate is a silicon substrate. Previously presented
The method according to claim 21, wherein the substrate is a first substrate; and the step of spreading graphene over the substrate comprises: growing a single layer of graphene on a second metal substrate; and removing the second metal substrate; and transferring the single layer of graphene onto said first substrate to obtain the graphene-coated substrate. Previously presented
The method according to claim 21, wherein the graphene spread on the substrate has a thickness of 0.34 nm to 34 nm or 1 to 100 carbon atom layers. Previously presented
The method of claim 21 wherein the thickness of the magnetron sputtered aluminum nitride on the substrate is 30 to 100 nm. Previously presented
The method according to claim 21, wherein the step of heat treating comprises: after placing the substrate sputtered with aluminum nitride in the MOCVD reaction chamber, introducing a mixed gas of hydrogen gas and ammonia gas into the reaction chamber; and after introducing the mixed gas of hydrogen gas and ammonia gas, heating the reaction chamber, and heat treating the substrate sputtered with the aluminum nitride, to obtain the heat-treated substrate. Previously presented
The method of claim 21 wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; the step of growing the first gallium nitride layer and the second gallium nitride layer comprises: growing the first gallium nitride layer; and then growing the second gallium nitride layer on the substrate on which a low V -III ratio gallium nitride layer is grown; or growing the second long gallium nitride layer; and then growing the first gallium nitride layer on the substrate on which a high V -III ratio gallium nitride layer is grown. Previously presented
. Canceled
The method according to claim 24, wherein the aluminum nitride transition layer has a thickness of 5 to 50 nm. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the first gallium nitride layer comprises: reducing the pressure in the MOCVD reaction chamber to 20 Torr; reducing the temperature to 1000 0 C; and sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and the gallium source, growing, on the aluminum nitride substrate, a low V -III ratio gallium nitride epitaxial layer by using chemical vapor deposition method, and then obtaining a low V -III ratio gallium nitride substrate. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the second gallium nitride layer comprises: maintaining the temperature of the MOCVD reaction chamber at 1000 C; increasing the pressure in the reaction chamber to 40 Torr; sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and gallium source, growing a high-V- Ill ratio gallium nitride epitaxial layer on the low V -III ratio gallium nitride substrate by using chemical vapor deposition method; and reducing the temperature of the reaction chamber to room temperature; and then taking out the sample, to obtain a silicon-based gallium nitride based on 4 graphene and magnetron sputtered aluminum nitride. Previously presented
. Canceled
. Canceled
;; °;;;-. Canceled
A gallium nitride film, comprising the following structures in order from bottom to top: a substrate, a graphene layer, an aluminum nitride nucleation layer formed by a magnetron sputtering method, a first gallium nitride layer, and a second gallium nitride layer; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the gallium nitride fi lm further comprises an aluminum nitride SVG 16083255.04-26-2021.KNYSJJCWDFLYX10.CLM.1.svg 0.12 0.08 Black and white transition layer located between the aluminum nitride nucleation layer and the first gallium nitride layer. Previously presented
The gallium nitride film according to claim 38, wherein the substrate is a silicon substrate. Previously presented
. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials5 process steps
Method for growing GaN on silicon substrate using transferred graphene, RF magnetron sputtered AlN nucleation layer (30-100 nm), pulsed MOCVD AlN transition layer, then sequential growth of low V-III ratio GaN epitaxial layer and high V-III ratio GaN epitaxial layer. Graphene is grown on copper by CVD, metal substrate removed by etching in FeCl₃/HCl solution, then transferred to silicon substrate. AlN sputtered using 5N purity Al target with N₂ and Ar at 1 Pa chamber pressure. Heat treatment at ~600°C for 20 min under H₂/NH3. AlN buffer grown at 650°C, AlN transition layer grown at 1050°C by pulsed MOCVD (T1=12s with NH3, T2=6s without NH3, 200 cycles). Low V-III GaN grown at 20 Torr, 1000°C; high V-III GaN grown at 40 Torr, 1000°C.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride film on substrate
Materials described outside the worked examples.
silicon substrate
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34–34 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,031,240Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-20. Canceled
Canceled
A method for growing gallium nitride, comprising: spreading graphene over a substrate; magnetron sputtering an aluminum nitride onto the graphene-coated substrate, to obtain a substrate sputtered with aluminum nitride; placing the substrate sputtered with aluminum nitride in a metal organic chemical vapor deposition (MOCVD) reaction chamber and heat treating the substrate to obtain the heat-treated substrate; growing an aluminum nitride transition layer on the heat-treated substrate; and growing a first gallium nitride layer and a second gallium nitride layer on the heat-treated substrate, respectively; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the step of magnetron sputtering an aluminum nitride on the substrate comprises: placing the graphene-coated silicon substrate into a magnetron sputtering system; and introducing nitrogen gas and argon gas into the reaction chamber of the magnetron sputtering system; and with 5 N purity aluminum as target material, sputtering an aluminum nitride on the graphene-coated substrate by radio frequency (RF) magnetron sputtering, to obtain the substrate sputtered with aluminum nitride; wherein the step of growing the aluminum nitride transition layer comprises: sequentially introducing hydrogen gas, ammonia gas and aluminum 2 source in the MOCVD reaction chamber, and growing the aluminum nitride buffer layer at low temperature; under an atmosphere of hydrogen gas, ammonia gas and aluminum source, heating the reaction chamber, and growing the aluminum nitride transition layer by using a pulsed MOCVD growth process, to obtain an aluminum nitride substrate; wherein the pulsed MOCVD growth process comprises: in one pulse period T₁+T₂ of growing aluminum nitride, introducing ammonia gas in T 1 time; not introducing ammonia gas in T₂ time; and repeating multiple pulse periods; wherein, the flow rate of aluminum source is 5-100 mmol/min, and the flow rate of ammonia gas is 100-5000 s c cm. Previously presented
The method of claim 21, wherein the substrate is a silicon substrate. Previously presented
The method according to claim 21, wherein the substrate is a first substrate; and the step of spreading graphene over the substrate comprises: growing a single layer of graphene on a second metal substrate; and removing the second metal substrate; and transferring the single layer of graphene onto said first substrate to obtain the graphene-coated substrate. Previously presented
The method according to claim 21, wherein the graphene spread on the substrate has a thickness of 0.34 nm to 34 nm or 1 to 100 carbon atom layers. Previously presented
The method of claim 21 wherein the thickness of the magnetron sputtered aluminum nitride on the substrate is 30 to 100 nm. Previously presented
The method according to claim 21, wherein the step of heat treating comprises: after placing the substrate sputtered with aluminum nitride in the MOCVD reaction chamber, introducing a mixed gas of hydrogen gas and ammonia gas into the reaction chamber; and after introducing the mixed gas of hydrogen gas and ammonia gas, heating the reaction chamber, and heat treating the substrate sputtered with the aluminum nitride, to obtain the heat-treated substrate. Previously presented
The method of claim 21 wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; the step of growing the first gallium nitride layer and the second gallium nitride layer comprises: growing the first gallium nitride layer; and then growing the second gallium nitride layer on the substrate on which a low V -III ratio gallium nitride layer is grown; or growing the second long gallium nitride layer; and then growing the first gallium nitride layer on the substrate on which a high V -III ratio gallium nitride layer is grown. Previously presented
. Canceled
The method according to claim 24, wherein the aluminum nitride transition layer has a thickness of 5 to 50 nm. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the first gallium nitride layer comprises: reducing the pressure in the MOCVD reaction chamber to 20 Torr; reducing the temperature to 1000 0 C; and sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and the gallium source, growing, on the aluminum nitride substrate, a low V -III ratio gallium nitride epitaxial layer by using chemical vapor deposition method, and then obtaining a low V -III ratio gallium nitride substrate. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the second gallium nitride layer comprises: maintaining the temperature of the MOCVD reaction chamber at 1000 C; increasing the pressure in the reaction chamber to 40 Torr; sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and gallium source, growing a high-V- Ill ratio gallium nitride epitaxial layer on the low V -III ratio gallium nitride substrate by using chemical vapor deposition method; and reducing the temperature of the reaction chamber to room temperature; and then taking out the sample, to obtain a silicon-based gallium nitride based on 4 graphene and magnetron sputtered aluminum nitride. Previously presented
. Canceled
. Canceled
;; °;;;-. Canceled
A gallium nitride film, comprising the following structures in order from bottom to top: a substrate, a graphene layer, an aluminum nitride nucleation layer formed by a magnetron sputtering method, a first gallium nitride layer, and a second gallium nitride layer; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the gallium nitride fi lm further comprises an aluminum nitride SVG 16083255.04-26-2021.KNYSJJCWDFLYX10.CLM.1.svg 0.12 0.08 Black and white transition layer located between the aluminum nitride nucleation layer and the first gallium nitride layer. Previously presented
The gallium nitride film according to claim 38, wherein the substrate is a silicon substrate. Previously presented
. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials5 process steps
Method for growing GaN on silicon substrate using transferred graphene, RF magnetron sputtered AlN nucleation layer (30-100 nm), pulsed MOCVD AlN transition layer, then sequential growth of low V-III ratio GaN epitaxial layer and high V-III ratio GaN epitaxial layer. Graphene is grown on copper by CVD, metal substrate removed by etching in FeCl₃/HCl solution, then transferred to silicon substrate. AlN sputtered using 5N purity Al target with N₂ and Ar at 1 Pa chamber pressure. Heat treatment at ~600°C for 20 min under H₂/NH3. AlN buffer grown at 650°C, AlN transition layer grown at 1050°C by pulsed MOCVD (T1=12s with NH3, T2=6s without NH3, 200 cycles). Low V-III GaN grown at 20 Torr, 1000°C; high V-III GaN grown at 40 Torr, 1000°C.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride film on substrate
Materials described outside the worked examples.
silicon substrate
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34–34 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,031,240Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-20. Canceled
Canceled
A method for growing gallium nitride, comprising: spreading graphene over a substrate; magnetron sputtering an aluminum nitride onto the graphene-coated substrate, to obtain a substrate sputtered with aluminum nitride; placing the substrate sputtered with aluminum nitride in a metal organic chemical vapor deposition (MOCVD) reaction chamber and heat treating the substrate to obtain the heat-treated substrate; growing an aluminum nitride transition layer on the heat-treated substrate; and growing a first gallium nitride layer and a second gallium nitride layer on the heat-treated substrate, respectively; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the step of magnetron sputtering an aluminum nitride on the substrate comprises: placing the graphene-coated silicon substrate into a magnetron sputtering system; and introducing nitrogen gas and argon gas into the reaction chamber of the magnetron sputtering system; and with 5 N purity aluminum as target material, sputtering an aluminum nitride on the graphene-coated substrate by radio frequency (RF) magnetron sputtering, to obtain the substrate sputtered with aluminum nitride; wherein the step of growing the aluminum nitride transition layer comprises: sequentially introducing hydrogen gas, ammonia gas and aluminum 2 source in the MOCVD reaction chamber, and growing the aluminum nitride buffer layer at low temperature; under an atmosphere of hydrogen gas, ammonia gas and aluminum source, heating the reaction chamber, and growing the aluminum nitride transition layer by using a pulsed MOCVD growth process, to obtain an aluminum nitride substrate; wherein the pulsed MOCVD growth process comprises: in one pulse period T₁+T₂ of growing aluminum nitride, introducing ammonia gas in T 1 time; not introducing ammonia gas in T₂ time; and repeating multiple pulse periods; wherein, the flow rate of aluminum source is 5-100 mmol/min, and the flow rate of ammonia gas is 100-5000 s c cm. Previously presented
The method of claim 21, wherein the substrate is a silicon substrate. Previously presented
The method according to claim 21, wherein the substrate is a first substrate; and the step of spreading graphene over the substrate comprises: growing a single layer of graphene on a second metal substrate; and removing the second metal substrate; and transferring the single layer of graphene onto said first substrate to obtain the graphene-coated substrate. Previously presented
The method according to claim 21, wherein the graphene spread on the substrate has a thickness of 0.34 nm to 34 nm or 1 to 100 carbon atom layers. Previously presented
The method of claim 21 wherein the thickness of the magnetron sputtered aluminum nitride on the substrate is 30 to 100 nm. Previously presented
The method according to claim 21, wherein the step of heat treating comprises: after placing the substrate sputtered with aluminum nitride in the MOCVD reaction chamber, introducing a mixed gas of hydrogen gas and ammonia gas into the reaction chamber; and after introducing the mixed gas of hydrogen gas and ammonia gas, heating the reaction chamber, and heat treating the substrate sputtered with the aluminum nitride, to obtain the heat-treated substrate. Previously presented
The method of claim 21 wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; the step of growing the first gallium nitride layer and the second gallium nitride layer comprises: growing the first gallium nitride layer; and then growing the second gallium nitride layer on the substrate on which a low V -III ratio gallium nitride layer is grown; or growing the second long gallium nitride layer; and then growing the first gallium nitride layer on the substrate on which a high V -III ratio gallium nitride layer is grown. Previously presented
. Canceled
The method according to claim 24, wherein the aluminum nitride transition layer has a thickness of 5 to 50 nm. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the first gallium nitride layer comprises: reducing the pressure in the MOCVD reaction chamber to 20 Torr; reducing the temperature to 1000 0 C; and sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and the gallium source, growing, on the aluminum nitride substrate, a low V -III ratio gallium nitride epitaxial layer by using chemical vapor deposition method, and then obtaining a low V -III ratio gallium nitride substrate. Previously presented
The method according to claim 24, wherein the V -III ratio of the first gallium nitride layer is lower than the V -III ratio of the second gallium nitride layer; and the step of growing the second gallium nitride layer comprises: maintaining the temperature of the MOCVD reaction chamber at 1000 C; increasing the pressure in the reaction chamber to 40 Torr; sequentially introducing hydrogen gas, ammonia gas and gallium source into the reaction chamber; under the atmosphere of hydrogen gas, ammonia gas and gallium source, growing a high-V- Ill ratio gallium nitride epitaxial layer on the low V -III ratio gallium nitride substrate by using chemical vapor deposition method; and reducing the temperature of the reaction chamber to room temperature; and then taking out the sample, to obtain a silicon-based gallium nitride based on 4 graphene and magnetron sputtered aluminum nitride. Previously presented
. Canceled
. Canceled
;; °;;;-. Canceled
A gallium nitride film, comprising the following structures in order from bottom to top: a substrate, a graphene layer, an aluminum nitride nucleation layer formed by a magnetron sputtering method, a first gallium nitride layer, and a second gallium nitride layer; wherein V -III ratio of the first gallium nitride layer is different from V -III ratio of the second gallium nitride layer; wherein the gallium nitride fi lm further comprises an aluminum nitride SVG 16083255.04-26-2021.KNYSJJCWDFLYX10.CLM.1.svg 0.12 0.08 Black and white transition layer located between the aluminum nitride nucleation layer and the first gallium nitride layer. Previously presented
The gallium nitride film according to claim 38, wherein the substrate is a silicon substrate. Previously presented
. Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials5 process steps
Method for growing GaN on silicon substrate using transferred graphene, RF magnetron sputtered AlN nucleation layer (30-100 nm), pulsed MOCVD AlN transition layer, then sequential growth of low V-III ratio GaN epitaxial layer and high V-III ratio GaN epitaxial layer. Graphene is grown on copper by CVD, metal substrate removed by etching in FeCl₃/HCl solution, then transferred to silicon substrate. AlN sputtered using 5N purity Al target with N₂ and Ar at 1 Pa chamber pressure. Heat treatment at ~600°C for 20 min under H₂/NH3. AlN buffer grown at 650°C, AlN transition layer grown at 1050°C by pulsed MOCVD (T1=12s with NH3, T2=6s without NH3, 200 cycles). Low V-III GaN grown at 20 Torr, 1000°C; high V-III GaN grown at 40 Torr, 1000°C.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride film on substrate
Materials described outside the worked examples.
silicon substrate
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.34–34 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
| — |
Thickness | 50–200 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 30–100 nm | — |
Temperature | 10–200 k | — |
Thickness | 5–50 nm | — |
Thickness | 10–200 mm | — |
Thickness | 5–100 mm | — |
| — |
Thickness | 50–200 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 30–100 nm | — |
Temperature | 10–200 k | — |
Thickness | 5–50 nm | — |
Thickness | 10–200 mm | — |
Thickness | 5–100 mm | — |
| — |
Thickness | 50–200 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 30–100 nm | — |
Temperature | 10–200 k | — |
Thickness | 5–50 nm | — |
Thickness | 10–200 mm | — |
Thickness | 5–100 mm | — |
| — |
Thickness | 50–200 nm | — |
Thickness | 500–3000 nm | — |
Thickness | 30–100 nm | — |
Temperature | 10–200 k | — |
Thickness | 5–50 nm | — |
Thickness | 10–200 mm | — |
Thickness | 5–100 mm | — |