Graphene as a Tunable Nonradiative Bath for Moiré Excitons | Matter42 Literature
Paper details
Research paper
TheoreticalComputed Raman
Graphene as a Tunable Nonradiative Bath for Moiré Excitons
Katsunori Wakabayashi
arXiv·2026·arXiv:2606.28591
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic TMDC/hBN/graphene heterostructure considered theoretically for nonradiative exciton energy transfer, with a moiré-localized exciton in the TMDC layer separated from gate-tunable graphene by an hBN spacer.
No measurements recorded
SimulatedCStudied MaterialBNSubstrate / DielectricTransition-metal dichalcogenide moiré layerStudied Material
Materials
Graphene
C
Studied Material
Variables
doping= gate-tunable
electronic_role= nonradiative bath
studied material
Hexagonal boron nitride
BN
Substrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Graphene as a Tunable Nonradiative Bath for Moiré Excitons
Katsunori Wakabayashi
arXiv·2026·arXiv:2606.28591
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic TMDC/hBN/graphene heterostructure considered theoretically for nonradiative exciton energy transfer, with a moiré-localized exciton in the TMDC layer separated from gate-tunable graphene by an hBN spacer.
No measurements recorded
SimulatedCStudied MaterialBNSubstrate / DielectricTransition-metal dichalcogenide moiré layerStudied Material
Materials
Graphene
C
Studied Material
Variables
doping= gate-tunable
electronic_role= nonradiative bath
studied material
Hexagonal boron nitride
BN
Substrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Graphene as a Tunable Nonradiative Bath for Moiré Excitons
Katsunori Wakabayashi
arXiv·2026·arXiv:2606.28591
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic TMDC/hBN/graphene heterostructure considered theoretically for nonradiative exciton energy transfer, with a moiré-localized exciton in the TMDC layer separated from gate-tunable graphene by an hBN spacer.
No measurements recorded
SimulatedCStudied MaterialBNSubstrate / DielectricTransition-metal dichalcogenide moiré layerStudied Material
Materials
Graphene
C
Studied Material
Variables
doping= gate-tunable
electronic_role= nonradiative bath
studied material
Hexagonal boron nitride
BN
Substrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Graphene as a Tunable Nonradiative Bath for Moiré Excitons
Katsunori Wakabayashi
arXiv·2026·arXiv:2606.28591
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic TMDC/hBN/graphene heterostructure considered theoretically for nonradiative exciton energy transfer, with a moiré-localized exciton in the TMDC layer separated from gate-tunable graphene by an hBN spacer.
No measurements recorded
SimulatedCStudied MaterialBNSubstrate / DielectricTransition-metal dichalcogenide moiré layerStudied Material
Materials
Graphene
C
Studied Material
Variables
doping= gate-tunable
electronic_role= nonradiative bath
studied material
Hexagonal boron nitride
BN
Substrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Fermi's golden ruleanalytic near-field/loss-function overlap modelGaussian exciton form factorPauli-blocking model for doped graphene
Settings
regimelong-wavelength
systemTMDC/hBN/graphene heterostructure
benchmarkfull random-phase-approximation loss function of doped graphene
validation{"quantities":["energy-transfer rate versus distance","suppression of interband electron-hole excitations"],"references":["random-phase-approximation loss function of doped graphene"],"sourcetype":"literaturetheorycomparison"}
distance symbolz
exciton form factorGaussian
gate tuning parametermuF
localization length symbolellX
Conditions
context:minimal theory for PL quenching near graphene
result summary:reproduces z^-4 point-dipole limit and finite-ell_X crossover
Fermi's golden ruleanalytic near-field/loss-function overlap modelGaussian exciton form factorPauli-blocking model for doped graphene
Settings
regimelong-wavelength
systemTMDC/hBN/graphene heterostructure
benchmarkfull random-phase-approximation loss function of doped graphene
validation{"quantities":["energy-transfer rate versus distance","suppression of interband electron-hole excitations"],"references":["random-phase-approximation loss function of doped graphene"],"sourcetype":"literaturetheorycomparison"}
distance symbolz
exciton form factorGaussian
gate tuning parametermuF
localization length symbolellX
Conditions
context:minimal theory for PL quenching near graphene
result summary:reproduces z^-4 point-dipole limit and finite-ell_X crossover
Fermi's golden ruleanalytic near-field/loss-function overlap modelGaussian exciton form factorPauli-blocking model for doped graphene
Settings
regimelong-wavelength
systemTMDC/hBN/graphene heterostructure
benchmarkfull random-phase-approximation loss function of doped graphene
validation{"quantities":["energy-transfer rate versus distance","suppression of interband electron-hole excitations"],"references":["random-phase-approximation loss function of doped graphene"],"sourcetype":"literaturetheorycomparison"}
distance symbolz
exciton form factorGaussian
gate tuning parametermuF
localization length symbolellX
Conditions
context:minimal theory for PL quenching near graphene
result summary:reproduces z^-4 point-dipole limit and finite-ell_X crossover
Fermi's golden ruleanalytic near-field/loss-function overlap modelGaussian exciton form factorPauli-blocking model for doped graphene
Settings
regimelong-wavelength
systemTMDC/hBN/graphene heterostructure
benchmarkfull random-phase-approximation loss function of doped graphene
validation{"quantities":["energy-transfer rate versus distance","suppression of interband electron-hole excitations"],"references":["random-phase-approximation loss function of doped graphene"],"sourcetype":"literaturetheorycomparison"}
distance symbolz
exciton form factorGaussian
gate tuning parametermuF
localization length symbolellX
Conditions
context:minimal theory for PL quenching near graphene
result summary:reproduces z^-4 point-dipole limit and finite-ell_X crossover