Enhanced superconductivity in atomically thin noble metals: From quantum confinement to interface-induced Lifshitz transition

Chun-Jie Zhang; Bing Zhang; Yapeng Wu; Xiao-Ping Li; Lei Wang

doi:10.1103/r5wx-7bnh

Paper details

Research paper

Computational DFTComputed PhononComputed PLTheoretical

Enhanced superconductivity in atomically thin noble metals: From quantum confinement to interface-induced Lifshitz transition

Chun-Jie Zhang, Bing Zhang, Yapeng Wu, Xiao-Ping Li et al.

arXiv preprint·2026·10.1103/r5wx-7bnh·arXiv:2606.03663

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Free-standing trilayer Cu(111) film with ABC stacking used to study intrinsic superconductivity under quantum confinement.

3 properties

Simulated Supercell DftCuStudied Material

Free-standing pentalayer Au(111) film with ABC stacking used to study intrinsic superconductivity under quantum confinement.

3 properties

Simulated Supercell DftAuStudied Material

Free-standing trilayer Ag(111) film with ABC stacking used to study intrinsic superconductivity under quantum confinement.

1 property

Simulated Supercell DftAgStudied Material

Monolayer h-BN on trilayer Cu(111) heterostructure in the thermodynamically stable N-bonded stacking configuration.

5 properties

Simulated Supercell DftCuStudied MaterialBNStudied Material

Monolayer h-BN on trilayer Cu(111) heterostructure in the metastable B-bonded stacking configuration.

4 properties

Simulated Supercell DftCuStudied MaterialBNStudied Material

Bilayer h-BN/3L-Cu(111) heterostructure with AB/BA-stacked bilayer h-BN.

No measurements recorded

Simulated Supercell DftCuStudied MaterialBNStudied Material

h-BN/3L-Cu(111)/h-BN sandwich heterostructure.

No measurements recorded

Simulated Supercell DftCuStudied MaterialBNStudied Material

Heterometallic 3L-Au/Ag(111) system used to test transferability of the interface-controlled mechanism.

No measurements recorded

Simulated Supercell DftAuStudied MaterialAgStudied Material

Materials

Studied Material

Also known as

copper

studied material

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Enhanced superconductivity in atomically thin noble metals: From quantum confinement to interface-induced Lifshitz transition | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Superconducting Transition Temperature	Tc	0.78K	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Electron Phonon Coupling Constant	lambda	0.44	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Density Of States At Fermi Level	N(E_F)	0.25states/(eV·atom)	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	0.63K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Electron Phonon Coupling Constant	lambda	0.51	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Logarithmic Average Phonon Frequency	omega_log	57.05K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Superconducting Transition Temperature	Tc	0.003K	Ag	Free-standing trilayer Ag(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	3.23K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Superconducting Transition Temperature	Tc	7K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	N-top interface formation energy	-0.04eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Formation Energy	B-top interface formation energy	-0.03eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	bridge/hollow interface formation energy above N-top	-0.02eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.56	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.8	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—

Properties

Type	Label	Value	Material	Sample	Source
Superconducting Transition Temperature	Tc	0.78K	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Electron Phonon Coupling Constant	lambda	0.44	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Density Of States At Fermi Level	N(E_F)	0.25states/(eV·atom)	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	0.63K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Electron Phonon Coupling Constant	lambda	0.51	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Logarithmic Average Phonon Frequency	omega_log	57.05K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Superconducting Transition Temperature	Tc	0.003K	Ag	Free-standing trilayer Ag(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	3.23K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Superconducting Transition Temperature	Tc	7K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	N-top interface formation energy	-0.04eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Formation Energy	B-top interface formation energy	-0.03eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	bridge/hollow interface formation energy above N-top	-0.02eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.56	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.8	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—

Properties

Type	Label	Value	Material	Sample	Source
Superconducting Transition Temperature	Tc	0.78K	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Electron Phonon Coupling Constant	lambda	0.44	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Density Of States At Fermi Level	N(E_F)	0.25states/(eV·atom)	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	0.63K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Electron Phonon Coupling Constant	lambda	0.51	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Logarithmic Average Phonon Frequency	omega_log	57.05K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Superconducting Transition Temperature	Tc	0.003K	Ag	Free-standing trilayer Ag(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	3.23K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Superconducting Transition Temperature	Tc	7K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	N-top interface formation energy	-0.04eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Formation Energy	B-top interface formation energy	-0.03eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	bridge/hollow interface formation energy above N-top	-0.02eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.56	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.8	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—

Properties

Type	Label	Value	Material	Sample	Source
Superconducting Transition Temperature	Tc	0.78K	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Electron Phonon Coupling Constant	lambda	0.44	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Density Of States At Fermi Level	N(E_F)	0.25states/(eV·atom)	Cu	Free-standing trilayer Cu(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	0.63K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Electron Phonon Coupling Constant	lambda	0.51	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Logarithmic Average Phonon Frequency	omega_log	57.05K	Au	Free-standing pentalayer Au(111) film with ABC stacking used	—
Superconducting Transition Temperature	Tc	0.003K	Ag	Free-standing trilayer Ag(111) film with ABC stacking used t	—
Superconducting Transition Temperature	Tc	3.23K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Superconducting Transition Temperature	Tc	7K	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	N-top interface formation energy	-0.04eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Formation Energy	B-top interface formation energy	-0.03eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Formation Energy	bridge/hollow interface formation energy above N-top	-0.02eV/f.u.	Cu BN	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.56	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Electron Phonon Coupling Constant	lambda	0.8	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the th	—
Density Of States At Fermi Level	N(E_F)	0.24states/(eV·atom)	Cu	Monolayer h-BN on trilayer Cu(111) heterostructure in the me	—