Research paperExperimental GrowthExperimental CharacterizationSurface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective MaskAshlee M. García, Byron D. Aguilar, William J. Doyle, Pernille Undrum Fathi et al.arXiv preprint·2026·arXiv:2606.02317AbstractSelective-area embedded regrowth of III–V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel optoelectronic device designs. This study evaluates the deposition selectivity of alternative mask materials Al₂O3, TiO2, and HfO2, and shows that surface modification with a thin SiO₂ cap can improve selectivity on non-selective or reactive masks without degrading optical response.Read more
SiO₂ mask film on GaAs wafer used as the reference selective-growth system.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask film on GaAs wafer used for selective-area growth tests.4 preparations3 characterizations2 figuresExperimentalSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
Al₂O₃ mask film on GaAs wafer used for selectivity survey and SiO₂-cap thickness study.4 preparations3 characterizations2 figuresExperimentalAl₂O₃Substrate / DielectricGaAsStudied MaterialExpand
HfO₂ mask film on GaAs wafer used for selectivity survey.4 preparations3 characterizations4 properties2 figuresExperimentalHfO₂Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask film on GaAs wafer used for selectivity survey and SiO₂-cap surface modification tests.4 preparations3 characterizations2 figuresExperimentalTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationSurface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective MaskAshlee M. García, Byron D. Aguilar, William J. Doyle, Pernille Undrum Fathi et al.arXiv preprint·2026·arXiv:2606.02317AbstractSelective-area embedded regrowth of III–V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel optoelectronic device designs. This study evaluates the deposition selectivity of alternative mask materials Al₂O3, TiO2, and HfO2, and shows that surface modification with a thin SiO₂ cap can improve selectivity on non-selective or reactive masks without degrading optical response.Read more
SiO₂ mask film on GaAs wafer used as the reference selective-growth system.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask film on GaAs wafer used for selective-area growth tests.4 preparations3 characterizations2 figuresExperimentalSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
Al₂O₃ mask film on GaAs wafer used for selectivity survey and SiO₂-cap thickness study.4 preparations3 characterizations2 figuresExperimentalAl₂O₃Substrate / DielectricGaAsStudied MaterialExpand
HfO₂ mask film on GaAs wafer used for selectivity survey.4 preparations3 characterizations4 properties2 figuresExperimentalHfO₂Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask film on GaAs wafer used for selectivity survey and SiO₂-cap surface modification tests.4 preparations3 characterizations2 figuresExperimentalTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationSurface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective MaskAshlee M. García, Byron D. Aguilar, William J. Doyle, Pernille Undrum Fathi et al.arXiv preprint·2026·arXiv:2606.02317AbstractSelective-area embedded regrowth of III–V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel optoelectronic device designs. This study evaluates the deposition selectivity of alternative mask materials Al₂O3, TiO2, and HfO2, and shows that surface modification with a thin SiO₂ cap can improve selectivity on non-selective or reactive masks without degrading optical response.Read more
SiO₂ mask film on GaAs wafer used as the reference selective-growth system.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask film on GaAs wafer used for selective-area growth tests.4 preparations3 characterizations2 figuresExperimentalSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
Al₂O₃ mask film on GaAs wafer used for selectivity survey and SiO₂-cap thickness study.4 preparations3 characterizations2 figuresExperimentalAl₂O₃Substrate / DielectricGaAsStudied MaterialExpand
HfO₂ mask film on GaAs wafer used for selectivity survey.4 preparations3 characterizations4 properties2 figuresExperimentalHfO₂Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask film on GaAs wafer used for selectivity survey and SiO₂-cap surface modification tests.4 preparations3 characterizations2 figuresExperimentalTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationSurface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective MaskAshlee M. García, Byron D. Aguilar, William J. Doyle, Pernille Undrum Fathi et al.arXiv preprint·2026·arXiv:2606.02317AbstractSelective-area embedded regrowth of III–V semiconductors by molecular beam epitaxy enables the seamless integration of metals and dielectrics into crystalline material for novel optoelectronic device designs. This study evaluates the deposition selectivity of alternative mask materials Al₂O3, TiO2, and HfO2, and shows that surface modification with a thin SiO₂ cap can improve selectivity on non-selective or reactive masks without degrading optical response.Read more
SiO₂ mask film on GaAs wafer used as the reference selective-growth system.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask film on GaAs wafer used for selective-area growth tests.4 preparations3 characterizations2 figuresExperimentalSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
Al₂O₃ mask film on GaAs wafer used for selectivity survey and SiO₂-cap thickness study.4 preparations3 characterizations2 figuresExperimentalAl₂O₃Substrate / DielectricGaAsStudied MaterialExpand
HfO₂ mask film on GaAs wafer used for selectivity survey.4 preparations3 characterizations4 properties2 figuresExperimentalHfO₂Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask film on GaAs wafer used for selectivity survey and SiO₂-cap surface modification tests.4 preparations3 characterizations2 figuresExperimentalTiO₂Substrate / DielectricGaAsStudied MaterialExpand
Si₃N₄ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricSi₃N₄Substrate / DielectricGaAsStudied MaterialExpand
TiO₂ mask modified with a thin SiO₂ capping layer on GaAs.4 preparations3 characterizations2 figuresExperimentalSiO₂Substrate / DielectricTiO₂Substrate / DielectricGaAsStudied MaterialExpand