Abstract

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS₂ or WSe₂ are gaining in importance as promising channel materials for field-effect transistors (FETs) and phototransistors. However, it is unclear that how the specific process of electron transport is affected by temperature. So, nowadays the electron dynamics of single-layer semiconductor cannot be understood fundamentally. Here, we develop an analytical theory distinguishing from traditional energy band theory, backed up by Monte-Carlo simulations, that predicts the process of electron transport and the effect of temperature on the electron transport in the single-layer semiconductor. In this paper, A new model is built to deal with electron transporting in the sing-layer semiconductor. The resistance is decided by the barrier rather than the electron scattering in the single-layer semiconductor, which is macroscopic quantum effect. Electron transport in FETs with different dielectric configurations are investigated at different temperatures and a new control factor that is decided by top-gate voltage or bottom-gate voltage is introduced to describe the effect of gate voltage on the electron transport in 2D semiconductor. The results of simulation show the drain current is mainly determined by some elements, such as temperature, top-gate voltage, bottom-gate voltage and source-drain voltage. For FETs, the Ids-Vds curves are non-linear and highly symmetric. However, the Ids-Vbg curves and the Ids-Vtg curves are also non-linear but highly asymmetric, which is very consistence with the experimental results. The transition mechanism from the insulator phase to metallic phase has been explained. For phototransistors, its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The results show that photocurrent is increasing with the illuminated optical power and the Ids-Vds curves are non-linear. For FETs and phototransistors, the number of exciton is increasing with temperature and the source-drain voltage. So maybe the field-effect mobility is decreasing at high temperature, which is related to the concentration of exciton. The exciton plays an important role in the single-layer semiconductor.

Abstract

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS₂ or WSe₂ are gaining in importance as promising channel materials for field-effect transistors (FETs) and phototransistors. However, it is unclear that how the specific process of electron transport is affected by temperature. So, nowadays the electron dynamics of single-layer semiconductor cannot be understood fundamentally. Here, we develop an analytical theory distinguishing from traditional energy band theory, backed up by Monte-Carlo simulations, that predicts the process of electron transport and the effect of temperature on the electron transport in the single-layer semiconductor. In this paper, A new model is built to deal with electron transporting in the sing-layer semiconductor. The resistance is decided by the barrier rather than the electron scattering in the single-layer semiconductor, which is macroscopic quantum effect. Electron transport in FETs with different dielectric configurations are investigated at different temperatures and a new control factor that is decided by top-gate voltage or bottom-gate voltage is introduced to describe the effect of gate voltage on the electron transport in 2D semiconductor. The results of simulation show the drain current is mainly determined by some elements, such as temperature, top-gate voltage, bottom-gate voltage and source-drain voltage. For FETs, the Ids-Vds curves are non-linear and highly symmetric. However, the Ids-Vbg curves and the Ids-Vtg curves are also non-linear but highly asymmetric, which is very consistence with the experimental results. The transition mechanism from the insulator phase to metallic phase has been explained. For phototransistors, its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The results show that photocurrent is increasing with the illuminated optical power and the Ids-Vds curves are non-linear. For FETs and phototransistors, the number of exciton is increasing with temperature and the source-drain voltage. So maybe the field-effect mobility is decreasing at high temperature, which is related to the concentration of exciton. The exciton plays an important role in the single-layer semiconductor.

Abstract

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS₂ or WSe₂ are gaining in importance as promising channel materials for field-effect transistors (FETs) and phototransistors. However, it is unclear that how the specific process of electron transport is affected by temperature. So, nowadays the electron dynamics of single-layer semiconductor cannot be understood fundamentally. Here, we develop an analytical theory distinguishing from traditional energy band theory, backed up by Monte-Carlo simulations, that predicts the process of electron transport and the effect of temperature on the electron transport in the single-layer semiconductor. In this paper, A new model is built to deal with electron transporting in the sing-layer semiconductor. The resistance is decided by the barrier rather than the electron scattering in the single-layer semiconductor, which is macroscopic quantum effect. Electron transport in FETs with different dielectric configurations are investigated at different temperatures and a new control factor that is decided by top-gate voltage or bottom-gate voltage is introduced to describe the effect of gate voltage on the electron transport in 2D semiconductor. The results of simulation show the drain current is mainly determined by some elements, such as temperature, top-gate voltage, bottom-gate voltage and source-drain voltage. For FETs, the Ids-Vds curves are non-linear and highly symmetric. However, the Ids-Vbg curves and the Ids-Vtg curves are also non-linear but highly asymmetric, which is very consistence with the experimental results. The transition mechanism from the insulator phase to metallic phase has been explained. For phototransistors, its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The results show that photocurrent is increasing with the illuminated optical power and the Ids-Vds curves are non-linear. For FETs and phototransistors, the number of exciton is increasing with temperature and the source-drain voltage. So maybe the field-effect mobility is decreasing at high temperature, which is related to the concentration of exciton. The exciton plays an important role in the single-layer semiconductor.

Abstract

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS₂ or WSe₂ are gaining in importance as promising channel materials for field-effect transistors (FETs) and phototransistors. However, it is unclear that how the specific process of electron transport is affected by temperature. So, nowadays the electron dynamics of single-layer semiconductor cannot be understood fundamentally. Here, we develop an analytical theory distinguishing from traditional energy band theory, backed up by Monte-Carlo simulations, that predicts the process of electron transport and the effect of temperature on the electron transport in the single-layer semiconductor. In this paper, A new model is built to deal with electron transporting in the sing-layer semiconductor. The resistance is decided by the barrier rather than the electron scattering in the single-layer semiconductor, which is macroscopic quantum effect. Electron transport in FETs with different dielectric configurations are investigated at different temperatures and a new control factor that is decided by top-gate voltage or bottom-gate voltage is introduced to describe the effect of gate voltage on the electron transport in 2D semiconductor. The results of simulation show the drain current is mainly determined by some elements, such as temperature, top-gate voltage, bottom-gate voltage and source-drain voltage. For FETs, the Ids-Vds curves are non-linear and highly symmetric. However, the Ids-Vbg curves and the Ids-Vtg curves are also non-linear but highly asymmetric, which is very consistence with the experimental results. The transition mechanism from the insulator phase to metallic phase has been explained. For phototransistors, its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The results show that photocurrent is increasing with the illuminated optical power and the Ids-Vds curves are non-linear. For FETs and phototransistors, the number of exciton is increasing with temperature and the source-drain voltage. So maybe the field-effect mobility is decreasing at high temperature, which is related to the concentration of exciton. The exciton plays an important role in the single-layer semiconductor.