Research paper
Experimental GrowthExperimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization10 properties2 figures
1 preparation2 characterizations13 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2700cm⁻¹ | — | |||
| Raman Intensity Ratio | I(2D)/I(G) | between 1 and 2 | — | |||
| Fet Threshold Voltage | VOC | 0.45V | — | |||
| Fet Threshold Voltage | VOC | 0.48V | — | |||
| Transport | JSC | 30.79mA/cm2 | — | |||
| Transport | JSC | 33.64mA/cm2 | — | |||
| Transport | FF | 51.55% | — | |||
| Transport | FF | 58.12% | — | |||
| Transport | PCE | 6.26% | — | |||
| Transport | PCE | 9.41% | — | |||
| Transport | J₀ | 0.000203mA/cm2 | — | |||
| Transport | J₀ | 0.0000172mA/cm2 | — | |||
| Transport | RS | 2.45ohm cm2 | — | |||
| Transport | RS | 1.37ohm cm2 | — | |||
| Transport | GSH | 17.4mS/cm2 | — | |||
| Transport | GSH | 0.62mS/cm2 | — | |||
| Optical Band Gap | Eg/q-VOC | 0.524eV | — | |||
| Optical Band Gap | Eg/q-VOC | 0.485eV | — | |||
| Pl Peak Shift | Urbach energy | 24.7meV | — | |||
| Pl Peak Shift | Urbach energy | 24.53meV | — | |||
| Contact Barrier Height | back contact barrier height | 0.42eV | — | |||
| Contact Barrier Height | back contact barrier height | 0.32eV | — |
Related documents with shared materials, methods, properties, or citations.
The morphology and interface structure of titanium on graphene
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization10 properties2 figures
1 preparation2 characterizations13 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2700cm⁻¹ | — | |||
| Raman Intensity Ratio | I(2D)/I(G) | between 1 and 2 | — | |||
| Fet Threshold Voltage | VOC | 0.45V | — | |||
| Fet Threshold Voltage | VOC | 0.48V | — | |||
| Transport | JSC | 30.79mA/cm2 | — | |||
| Transport | JSC | 33.64mA/cm2 | — | |||
| Transport | FF | 51.55% | — | |||
| Transport | FF | 58.12% | — | |||
| Transport | PCE | 6.26% | — | |||
| Transport | PCE | 9.41% | — | |||
| Transport | J₀ | 0.000203mA/cm2 | — | |||
| Transport | J₀ | 0.0000172mA/cm2 | — | |||
| Transport | RS | 2.45ohm cm2 | — | |||
| Transport | RS | 1.37ohm cm2 | — | |||
| Transport | GSH | 17.4mS/cm2 | — | |||
| Transport | GSH | 0.62mS/cm2 | — | |||
| Optical Band Gap | Eg/q-VOC | 0.524eV | — | |||
| Optical Band Gap | Eg/q-VOC | 0.485eV | — | |||
| Pl Peak Shift | Urbach energy | 24.7meV | — | |||
| Pl Peak Shift | Urbach energy | 24.53meV | — | |||
| Contact Barrier Height | back contact barrier height | 0.42eV | — | |||
| Contact Barrier Height | back contact barrier height | 0.32eV | — |
Related documents with shared materials, methods, properties, or citations.
The morphology and interface structure of titanium on graphene
Ultraclean suspended graphene by radiolysis of adsorbed water
METHOD FOR PRODUCING GRAPHENE
APPARATUS AND METHOD FOR PLASMA SYNTHESIS OF GRAPHITIC PRODUCTS INCLUDING GRAPHENE
Spin defects in hexagonal boron nitride as two-dimensional strain sensors
Metallic NbS2 one-dimensional van der Waals heterostructures
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Voltage-Induced Oxidation for Enhanced Purity and Reproducibility of Quantum Emission in Monolayer 2D Materials
Broadband, Flexible, Skin-Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization10 properties2 figures
1 preparation2 characterizations13 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2700cm⁻¹ | — | |||
| Raman Intensity Ratio | I(2D)/I(G) | between 1 and 2 | — | |||
| Fet Threshold Voltage | VOC | 0.45V | — | |||
| Fet Threshold Voltage | VOC | 0.48V | — | |||
| Transport | JSC | 30.79mA/cm2 | — | |||
| Transport | JSC | 33.64mA/cm2 | — | |||
| Transport | FF | 51.55% | — | |||
| Transport | FF | 58.12% | — | |||
| Transport | PCE | 6.26% | — | |||
| Transport | PCE | 9.41% | — | |||
| Transport | J₀ | 0.000203mA/cm2 | — | |||
| Transport | J₀ | 0.0000172mA/cm2 | — | |||
| Transport | RS | 2.45ohm cm2 | — | |||
| Transport | RS | 1.37ohm cm2 | — | |||
| Transport | GSH | 17.4mS/cm2 | — | |||
| Transport | GSH | 0.62mS/cm2 | — | |||
| Optical Band Gap | Eg/q-VOC | 0.524eV | — | |||
| Optical Band Gap | Eg/q-VOC | 0.485eV | — | |||
| Pl Peak Shift | Urbach energy | 24.7meV | — | |||
| Pl Peak Shift | Urbach energy | 24.53meV | — | |||
| Contact Barrier Height | back contact barrier height | 0.42eV | — | |||
| Contact Barrier Height | back contact barrier height | 0.32eV | — |
Related documents with shared materials, methods, properties, or citations.
The morphology and interface structure of titanium on graphene
Ultraclean suspended graphene by radiolysis of adsorbed water
METHOD FOR PRODUCING GRAPHENE
APPARATUS AND METHOD FOR PLASMA SYNTHESIS OF GRAPHITIC PRODUCTS INCLUDING GRAPHENE
Spin defects in hexagonal boron nitride as two-dimensional strain sensors
Metallic NbS2 one-dimensional van der Waals heterostructures
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Voltage-Induced Oxidation for Enhanced Purity and Reproducibility of Quantum Emission in Monolayer 2D Materials
Broadband, Flexible, Skin-Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization10 properties2 figures
1 preparation2 characterizations13 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | G | 1580cm⁻¹ | — | |||
| Raman Peak | 2D | 2700cm⁻¹ | — | |||
| Raman Intensity Ratio | I(2D)/I(G) | between 1 and 2 | — | |||
| Fet Threshold Voltage | VOC | 0.45V | — | |||
| Fet Threshold Voltage | VOC | 0.48V | — | |||
| Transport | JSC | 30.79mA/cm2 | — | |||
| Transport | JSC | 33.64mA/cm2 | — | |||
| Transport | FF | 51.55% | — | |||
| Transport | FF | 58.12% | — | |||
| Transport | PCE | 6.26% | — | |||
| Transport | PCE | 9.41% | — | |||
| Transport | J₀ | 0.000203mA/cm2 | — | |||
| Transport | J₀ | 0.0000172mA/cm2 | — | |||
| Transport | RS | 2.45ohm cm2 | — | |||
| Transport | RS | 1.37ohm cm2 | — | |||
| Transport | GSH | 17.4mS/cm2 | — | |||
| Transport | GSH | 0.62mS/cm2 | — | |||
| Optical Band Gap | Eg/q-VOC | 0.524eV | — | |||
| Optical Band Gap | Eg/q-VOC | 0.485eV | — | |||
| Pl Peak Shift | Urbach energy | 24.7meV | — | |||
| Pl Peak Shift | Urbach energy | 24.53meV | — | |||
| Contact Barrier Height | back contact barrier height | 0.42eV | — | |||
| Contact Barrier Height | back contact barrier height | 0.32eV | — |
Related documents with shared materials, methods, properties, or citations.
The morphology and interface structure of titanium on graphene
Ultraclean suspended graphene by radiolysis of adsorbed water
METHOD FOR PRODUCING GRAPHENE
APPARATUS AND METHOD FOR PLASMA SYNTHESIS OF GRAPHITIC PRODUCTS INCLUDING GRAPHENE
Spin defects in hexagonal boron nitride as two-dimensional strain sensors
Metallic NbS2 one-dimensional van der Waals heterostructures
Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
Voltage-Induced Oxidation for Enhanced Purity and Reproducibility of Quantum Emission in Monolayer 2D Materials
Broadband, Flexible, Skin-Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications