Patent
US 12,113,127 B2GaN-BASED HIGH ELECTRON MOBILITY TRANSISTORS AND FABRICATION METHOD THEREOF
Kuang-Po Hsueh
Nanjing Greenchip Semiconductor Co., Ltd., Nanjing (CN)·Oct. 8, 2024·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,113,127 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the layout of GaN-based HEMTs with no device layout under the pad area (PAD) according to the prior art.
FIG. 2 shows the layout of GaN-based HEMTs with device layout under the pad area (PAD) according to the prior art.
FIG. 3 shows the structure of a p-GaN gate enhanced HEMT (p-GaN gate HEMT) structure, i.e., a normally-off GaN HEMT, fabricated according to the prior art.
FIG. 4 is a cross-sectional view of the normally-off GaN-based HEMT structure as shown in
FIGS. 5-6 show cross-sectional views of normally-on 5 GaN-based HEMTs fabricated according to the prior art.
FIG. 6, if individual semiconductor device is a normally-on GaN-based HEMT, there is no p-GaN gate layer epitaxial structure, and the gate metal is directly …
FIG. 7 shows a layout for fabricating GaN-based HEMTs according to a preferred embodiment of the present inven- tion.
FIGS. 8-9 are cross-sectional views illustrating the struc- 10 ture of a normally-off GaN-based HEMTS with electrodes connected to backside electrode formed by …
FIG. 9. One embodiment of the present invention provides a process integration method for preparing a normally-off GaN-based HEMTs structure with electrode …
FIG. 10 shows the original structure of a normally-off GaN-based HEMT with electrode connected to backside electrode by using a deep etching process according …
FIG. 11 shows a schematic cross-sectional view of defin- 20 ing a device isolation structure using a photomask and etching according to a preferred embodiment …
FIG. 12 is a schematic cross-sectional view illustrating a gate region structure of a p-GaN gate layer defined by a 25 photomask and etching processes according …
FIG. 13 shows a schematic cross-sectional view of defin- ing the structure of the drain electrode and the source electrode region by using a photomask and a …
FIG. 14 shows a schematic cross-sectional view of form- ing a gate electrode structure on the gate region of the p-GaN gate layer by using a photomask and …
FIG. 15 shows a schematic cross-sectional view of a protective layer structure formed over an AlGaN layer, a drain electrode, a source electrode, and a gate …
FIG. 16 shows a schematic cross-sectional view of form- ing drain and source contact vias and gate contact vias in the 45 protective layer by using a photomask …
FIG. 17 shows a schematic cross-sectional view the formation of deep etching contact vias penetrating the 50 protective layer, the AlGaN layer, the n-type …
FIG. 18 shows a schematic cross-sectional view of form- ing a source and gate metal bonding areas (PADs) by using a photomask and metal deposition processes …
FIG. 19 shows a schematic cross-sectional view of a metal 60 connection structure for forming a drain electrode and a drain-to-substrate contact via by using a …
FIG. 20 shows a schematic cross-sectional view of a 65 structure in which a backside polishing process of a wafer is performed so that the filling metal in the …
FIG. 21 shows a schematic cross-sectional view of a back electrode structure formed by metal deposition according to a preferred embodiment of the present …
FIG. 22 shows a schematic cross-sectional view of per- forming a wafer dicing to form a normally-off GaN-based HEMT structure according to a preferred …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer, an Aluminum Gallium Nitride (AlGaN) layer and a p-type Gallium Nitride (GaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said chan-nel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 1, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (InxGa₁-xN) and Aluminum Indium Gallium Nitride (InxAlyGa₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 1, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode.
The GaN-based HEMT of claim 1, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a n-type Gallium Nitride (GaN) layer; an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said n-type GaN layer; and a p-type Gallium Nitride (GaN) layer been formed on said AlGaN layer, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said channel layer; a backside electrode been formed on other side of said n-type GaN layer; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer and said n-type GaN layer to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 7, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer and an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said AlGaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 11, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (Inx Ga₁-xN) and Aluminum Indium Gallium Nitride (InxAly Ga₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 11, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein said n-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
The GaN-based HEMT of claim 11, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
normally-off GaN-based HEMT with substrate and p-type GaN gate
normally-off GaN-based HEMT without separate substrate (substrate-free, p-GaN gate)
Materials described outside the worked examples.
n-type Gallium Nitride
GaN
Aluminum Gallium Nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,113,127 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the layout of GaN-based HEMTs with no device layout under the pad area (PAD) according to the prior art.
FIG. 2 shows the layout of GaN-based HEMTs with device layout under the pad area (PAD) according to the prior art.
FIG. 3 shows the structure of a p-GaN gate enhanced HEMT (p-GaN gate HEMT) structure, i.e., a normally-off GaN HEMT, fabricated according to the prior art.
FIG. 4 is a cross-sectional view of the normally-off GaN-based HEMT structure as shown in
FIGS. 5-6 show cross-sectional views of normally-on 5 GaN-based HEMTs fabricated according to the prior art.
FIG. 6, if individual semiconductor device is a normally-on GaN-based HEMT, there is no p-GaN gate layer epitaxial structure, and the gate metal is directly …
FIG. 7 shows a layout for fabricating GaN-based HEMTs according to a preferred embodiment of the present inven- tion.
FIGS. 8-9 are cross-sectional views illustrating the struc- 10 ture of a normally-off GaN-based HEMTS with electrodes connected to backside electrode formed by …
FIG. 9. One embodiment of the present invention provides a process integration method for preparing a normally-off GaN-based HEMTs structure with electrode …
FIG. 10 shows the original structure of a normally-off GaN-based HEMT with electrode connected to backside electrode by using a deep etching process according …
FIG. 11 shows a schematic cross-sectional view of defin- 20 ing a device isolation structure using a photomask and etching according to a preferred embodiment …
FIG. 12 is a schematic cross-sectional view illustrating a gate region structure of a p-GaN gate layer defined by a 25 photomask and etching processes according …
FIG. 13 shows a schematic cross-sectional view of defin- ing the structure of the drain electrode and the source electrode region by using a photomask and a …
FIG. 14 shows a schematic cross-sectional view of form- ing a gate electrode structure on the gate region of the p-GaN gate layer by using a photomask and …
FIG. 15 shows a schematic cross-sectional view of a protective layer structure formed over an AlGaN layer, a drain electrode, a source electrode, and a gate …
FIG. 16 shows a schematic cross-sectional view of form- ing drain and source contact vias and gate contact vias in the 45 protective layer by using a photomask …
FIG. 17 shows a schematic cross-sectional view the formation of deep etching contact vias penetrating the 50 protective layer, the AlGaN layer, the n-type …
FIG. 18 shows a schematic cross-sectional view of form- ing a source and gate metal bonding areas (PADs) by using a photomask and metal deposition processes …
FIG. 19 shows a schematic cross-sectional view of a metal 60 connection structure for forming a drain electrode and a drain-to-substrate contact via by using a …
FIG. 20 shows a schematic cross-sectional view of a 65 structure in which a backside polishing process of a wafer is performed so that the filling metal in the …
FIG. 21 shows a schematic cross-sectional view of a back electrode structure formed by metal deposition according to a preferred embodiment of the present …
FIG. 22 shows a schematic cross-sectional view of per- forming a wafer dicing to form a normally-off GaN-based HEMT structure according to a preferred …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer, an Aluminum Gallium Nitride (AlGaN) layer and a p-type Gallium Nitride (GaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said chan-nel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 1, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (InxGa₁-xN) and Aluminum Indium Gallium Nitride (InxAlyGa₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 1, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode.
The GaN-based HEMT of claim 1, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a n-type Gallium Nitride (GaN) layer; an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said n-type GaN layer; and a p-type Gallium Nitride (GaN) layer been formed on said AlGaN layer, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said channel layer; a backside electrode been formed on other side of said n-type GaN layer; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer and said n-type GaN layer to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 7, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer and an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said AlGaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 11, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (Inx Ga₁-xN) and Aluminum Indium Gallium Nitride (InxAly Ga₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 11, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein said n-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
The GaN-based HEMT of claim 11, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
normally-off GaN-based HEMT with substrate and p-type GaN gate
normally-off GaN-based HEMT without separate substrate (substrate-free, p-GaN gate)
Materials described outside the worked examples.
n-type Gallium Nitride
GaN
Aluminum Gallium Nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,113,127 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the layout of GaN-based HEMTs with no device layout under the pad area (PAD) according to the prior art.
FIG. 2 shows the layout of GaN-based HEMTs with device layout under the pad area (PAD) according to the prior art.
FIG. 3 shows the structure of a p-GaN gate enhanced HEMT (p-GaN gate HEMT) structure, i.e., a normally-off GaN HEMT, fabricated according to the prior art.
FIG. 4 is a cross-sectional view of the normally-off GaN-based HEMT structure as shown in
FIGS. 5-6 show cross-sectional views of normally-on 5 GaN-based HEMTs fabricated according to the prior art.
FIG. 6, if individual semiconductor device is a normally-on GaN-based HEMT, there is no p-GaN gate layer epitaxial structure, and the gate metal is directly …
FIG. 7 shows a layout for fabricating GaN-based HEMTs according to a preferred embodiment of the present inven- tion.
FIGS. 8-9 are cross-sectional views illustrating the struc- 10 ture of a normally-off GaN-based HEMTS with electrodes connected to backside electrode formed by …
FIG. 9. One embodiment of the present invention provides a process integration method for preparing a normally-off GaN-based HEMTs structure with electrode …
FIG. 10 shows the original structure of a normally-off GaN-based HEMT with electrode connected to backside electrode by using a deep etching process according …
FIG. 11 shows a schematic cross-sectional view of defin- 20 ing a device isolation structure using a photomask and etching according to a preferred embodiment …
FIG. 12 is a schematic cross-sectional view illustrating a gate region structure of a p-GaN gate layer defined by a 25 photomask and etching processes according …
FIG. 13 shows a schematic cross-sectional view of defin- ing the structure of the drain electrode and the source electrode region by using a photomask and a …
FIG. 14 shows a schematic cross-sectional view of form- ing a gate electrode structure on the gate region of the p-GaN gate layer by using a photomask and …
FIG. 15 shows a schematic cross-sectional view of a protective layer structure formed over an AlGaN layer, a drain electrode, a source electrode, and a gate …
FIG. 16 shows a schematic cross-sectional view of form- ing drain and source contact vias and gate contact vias in the 45 protective layer by using a photomask …
FIG. 17 shows a schematic cross-sectional view the formation of deep etching contact vias penetrating the 50 protective layer, the AlGaN layer, the n-type …
FIG. 18 shows a schematic cross-sectional view of form- ing a source and gate metal bonding areas (PADs) by using a photomask and metal deposition processes …
FIG. 19 shows a schematic cross-sectional view of a metal 60 connection structure for forming a drain electrode and a drain-to-substrate contact via by using a …
FIG. 20 shows a schematic cross-sectional view of a 65 structure in which a backside polishing process of a wafer is performed so that the filling metal in the …
FIG. 21 shows a schematic cross-sectional view of a back electrode structure formed by metal deposition according to a preferred embodiment of the present …
FIG. 22 shows a schematic cross-sectional view of per- forming a wafer dicing to form a normally-off GaN-based HEMT structure according to a preferred …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer, an Aluminum Gallium Nitride (AlGaN) layer and a p-type Gallium Nitride (GaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said chan-nel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 1, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (InxGa₁-xN) and Aluminum Indium Gallium Nitride (InxAlyGa₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 1, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode.
The GaN-based HEMT of claim 1, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a n-type Gallium Nitride (GaN) layer; an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said n-type GaN layer; and a p-type Gallium Nitride (GaN) layer been formed on said AlGaN layer, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said channel layer; a backside electrode been formed on other side of said n-type GaN layer; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer and said n-type GaN layer to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 7, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer and an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said AlGaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 11, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (Inx Ga₁-xN) and Aluminum Indium Gallium Nitride (InxAly Ga₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 11, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein said n-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
The GaN-based HEMT of claim 11, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
normally-off GaN-based HEMT with substrate and p-type GaN gate
normally-off GaN-based HEMT without separate substrate (substrate-free, p-GaN gate)
Materials described outside the worked examples.
n-type Gallium Nitride
GaN
Aluminum Gallium Nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
Patent
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US 12,113,127 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the layout of GaN-based HEMTs with no device layout under the pad area (PAD) according to the prior art.
FIG. 2 shows the layout of GaN-based HEMTs with device layout under the pad area (PAD) according to the prior art.
FIG. 3 shows the structure of a p-GaN gate enhanced HEMT (p-GaN gate HEMT) structure, i.e., a normally-off GaN HEMT, fabricated according to the prior art.
FIG. 4 is a cross-sectional view of the normally-off GaN-based HEMT structure as shown in
FIGS. 5-6 show cross-sectional views of normally-on 5 GaN-based HEMTs fabricated according to the prior art.
FIG. 6, if individual semiconductor device is a normally-on GaN-based HEMT, there is no p-GaN gate layer epitaxial structure, and the gate metal is directly …
FIG. 7 shows a layout for fabricating GaN-based HEMTs according to a preferred embodiment of the present inven- tion.
FIGS. 8-9 are cross-sectional views illustrating the struc- 10 ture of a normally-off GaN-based HEMTS with electrodes connected to backside electrode formed by …
FIG. 9. One embodiment of the present invention provides a process integration method for preparing a normally-off GaN-based HEMTs structure with electrode …
FIG. 10 shows the original structure of a normally-off GaN-based HEMT with electrode connected to backside electrode by using a deep etching process according …
FIG. 11 shows a schematic cross-sectional view of defin- 20 ing a device isolation structure using a photomask and etching according to a preferred embodiment …
FIG. 12 is a schematic cross-sectional view illustrating a gate region structure of a p-GaN gate layer defined by a 25 photomask and etching processes according …
FIG. 13 shows a schematic cross-sectional view of defin- ing the structure of the drain electrode and the source electrode region by using a photomask and a …
FIG. 14 shows a schematic cross-sectional view of form- ing a gate electrode structure on the gate region of the p-GaN gate layer by using a photomask and …
FIG. 15 shows a schematic cross-sectional view of a protective layer structure formed over an AlGaN layer, a drain electrode, a source electrode, and a gate …
FIG. 16 shows a schematic cross-sectional view of form- ing drain and source contact vias and gate contact vias in the 45 protective layer by using a photomask …
FIG. 17 shows a schematic cross-sectional view the formation of deep etching contact vias penetrating the 50 protective layer, the AlGaN layer, the n-type …
FIG. 18 shows a schematic cross-sectional view of form- ing a source and gate metal bonding areas (PADs) by using a photomask and metal deposition processes …
FIG. 19 shows a schematic cross-sectional view of a metal 60 connection structure for forming a drain electrode and a drain-to-substrate contact via by using a …
FIG. 20 shows a schematic cross-sectional view of a 65 structure in which a backside polishing process of a wafer is performed so that the filling metal in the …
FIG. 21 shows a schematic cross-sectional view of a back electrode structure formed by metal deposition according to a preferred embodiment of the present …
FIG. 22 shows a schematic cross-sectional view of per- forming a wafer dicing to form a normally-off GaN-based HEMT structure according to a preferred …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer, an Aluminum Gallium Nitride (AlGaN) layer and a p-type Gallium Nitride (GaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said chan-nel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 1, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (InxGa₁-xN) and Aluminum Indium Gallium Nitride (InxAlyGa₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 1, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 1, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode.
The GaN-based HEMT of claim 1, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a n-type Gallium Nitride (GaN) layer; an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said n-type GaN layer; and a p-type Gallium Nitride (GaN) layer been formed on said AlGaN layer, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer, said p-type GaN layer and said n-type GaN layer form a pn junction to deplete said two-dimensional electron gas in said channel layer; a backside electrode been formed on other side of said n-type GaN layer; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said p-type GaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer and said n-type GaN layer to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 7, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 7, wherein said n-type GaN layer, said p-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
A Gallium Nitride (GaN)-based high electron mobility transistor (HEMT) comprising: a substrate; from bottom to top, a n-type Gallium Nitride (GaN) layer and an Aluminum Gallium Nitride (AlGaN) layer been formed on one side of said substrate, wherein said n-type GaN layer is used to generate a two-dimensional electron gas therein and used as a channel layer; a backside electrode been formed on other side of said substrate; a source electrode been formed on said AlGaN layer and making ohmic contact with said AlGaN layer; a drain electrode been formed on said AlGaN layer not overlapping said source electrode and making ohmic contact with said AlGaN layer; and a gate electrode been formed on said AlGaN layer not overlapping said source electrode and said drain elec-trode; a protective layer been formed over said AlGaN layer, said source electrode, said drain electrode and said gate electrode; a plurality of vias been formed in said protective layer to respectively connect said source electrode, said drain electrode and said gate electrode to outside of said protective layer through metal connection; and a contact via been formed between said outside of said protective layer and said backside electrode, and pen-etrating through said protective layer, said AlGaN layer, said n-type GaN layer and said substrate to electrically connect one or more electrodes of said source electrode, said drain electrode and said gate electrode to said backside electrode through metal contact.
The GaN-based HEMT of claim 11, wherein material of said substrate includes group consisting of Aluminum Oxide (Al₂O₃), Silicon Carbide (SiC), Zinc Oxide (ZnO), Silicon substrate (Si), Gallium Nitride (GaN), Aluminum Gallium Nitride (AlxGa₁-xN), Indium Gallium Nitride (Inx Ga₁-xN) and Aluminum Indium Gallium Nitride (InxAly Ga₁-x-yN), where x, y are the contents (0≤x≤1, 0≤y≤1).
The GaN-based HEMT of claim 11, wherein materials for making said gate electrode, said source electrode and said drain electrode include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein materials for making said metal connection include Au, Pt/Ti/Pt/Au, Ti/Al/Ti/Au, Ti/Au, Cr/Au, Pd/Au, Ti/Pd/Au Pd/Ti/Au, Cr, Pt/Au, Ni/Au, Ta/Ti, Ti/Pt/Au, Ti/Cr/Au, W/Au, W/Cu, Cu or Pt/Ru.
The GaN-based HEMT of claim 11, wherein said n-type GaN layer and said AlGaN layer are formed by molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE).
The GaN-based HEMT of claim 11, wherein said other side of said substrate is polished and thinned by a backside polishing process to expose metal contact that filled said contact via before formation of said backside electrode. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
normally-off GaN-based HEMT with substrate and p-type GaN gate
normally-off GaN-based HEMT without separate substrate (substrate-free, p-GaN gate)
Materials described outside the worked examples.
n-type Gallium Nitride
GaN
Aluminum Gallium Nitride
AlGaN
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Related documents with shared materials, methods, properties, or citations.
normally-on GaN-based HEMT with substrate and AlGaN gate
Aluminum Oxide
Al₂O₃
Silicon Carbide
SiC
Zinc Oxide
ZnO
Silicon
Si
Aluminum Gallium Nitride
AlxGa₁-xN
Indium Gallium Nitride
InxGa₁-xN
Aluminum Indium Gallium Nitride
InxAlyGa₁-x-yN
electrode metal stack options
normally-on GaN-based HEMT with substrate and AlGaN gate
Aluminum Oxide
Al₂O₃
Silicon Carbide
SiC
Zinc Oxide
ZnO
Silicon
Si
Aluminum Gallium Nitride
AlxGa₁-xN
Indium Gallium Nitride
InxGa₁-xN
Aluminum Indium Gallium Nitride
InxAlyGa₁-x-yN
electrode metal stack options
normally-on GaN-based HEMT with substrate and AlGaN gate
Aluminum Oxide
Al₂O₃
Silicon Carbide
SiC
Zinc Oxide
ZnO
Silicon
Si
Aluminum Gallium Nitride
AlxGa₁-xN
Indium Gallium Nitride
InxGa₁-xN
Aluminum Indium Gallium Nitride
InxAlyGa₁-x-yN
electrode metal stack options
normally-on GaN-based HEMT with substrate and AlGaN gate
Aluminum Oxide
Al₂O₃
Silicon Carbide
SiC
Zinc Oxide
ZnO
Silicon
Si
Aluminum Gallium Nitride
AlxGa₁-xN
Indium Gallium Nitride
InxGa₁-xN
Aluminum Indium Gallium Nitride
InxAlyGa₁-x-yN
electrode metal stack options