Title: ORDERED GROWTH OF LARGE CRYSTAL GRAPHENE BY LASER-BASED LOCALIZED HEATING FOR HIGH THROUGHPUT PRODUCTION Nucleation Sites/Am ik\ \ H F; A -~-- I-. i ~-E ngineere d Gra in Do m ains * Center of laser spot FIG. 2B k r 150

OZYILMAZ; c/o National Univer- sit y of Singapore; c/o National University of Singapore

Patent

Atlas literature

Patent

US 10,815,584

Title: ORDERED GROWTH OF LARGE CRYSTAL GRAPHENE BY LASER-BASED LOCALIZED HEATING FOR HIGH THROUGHPUT PRODUCTION Nucleation Sites/Am ik\ \ H F; A -~-- I-. i ~-E ngineere d Gra in Do m ains * Center of laser spot FIG. 2B k r 150

Barbaros Ozyilmaz, Chee Tat Toh

National University of Singapore·21 May 2015·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a schematic illustrating the growth of graphene crystal grains in prior art methods. [0015]

FIG. 2

FIG. 2B is a illustrating the engineered graphene grain domains relative to the laser- induced nucleation sites. [0017]

FIG. 3

FIG. 3B is a schematic illustrating the growth of graphene when the laser beam is arranged according to

FIG. 4

FIG. 4 is a schematic illustrating the growth of graphene in a columnar array. [0020]

FIG. 5

FIG. 5 is a schematic illustrating a laser growth chamber. [0021]

FIG. 6

FIG. 6C is a schematic illustrating the use of a laser to pattern graphene. [0024]

FIG. 7

FIG. 7 is a schematic illustrating the use of a laser to trigger nucleation of graphene in a small spot. [0026]

FIG. 8

FIG. 8 is a schematic illustrating the use of a laser to create a single seed spot to create a large area single crystal graphene sheet. [0027]

FIG. 9

FIG. 9 is a schematic illustrating the use of a laser to create single-sided polymer- coated graphene that can be stacked or rolled. [0028]

FIG. 10

FIG. 10 is a schematic illustrating the use of a laser to create double-sided polymer- coated graphene that can be stacked or rolled WO 2015/072927 PCT/SG₂ 0 …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

7 independent · 11 dependent

1
Independentgraphene crystalcarbon source
A method of making an array of graphene crystals on a substrate,, the method comprising: irradiating the substrate with a plurality of laser beams to locally melt a portion of the substrate in the presence of a carbon source to form a nucleation site for a graphene crystal,; oﬀsetting the plurality of laser beams; and decreasing power of the plurality of laser beams while maintaining the substrate and plurality of laser beams stationary, in order to increase the size of the graphene crystal, thereby forming an array of graphene crystals. Currently amended
1. 3
  Dependent← claim 1graphene crystal
  The method of claim 1, wherein the plurality of laser beams irradiate the substrate at equidistant points of [[an]] a hexagonal array of graphene crystals,. Currently amended
2. 4
  Dependent← claim 1graphene crystal
  (Withdrawn-currently amended) The method of claim 1, wherein the plurality of laser beams irradiate the substrate at points within a rectangular array,. Currently amended
3. 10
  Dependent← claim 1graphene crystal
  The method of claim 1, further comprising providing a support at a graphene grain boundary. Previously presented
4. 11
  Dependent← claim 1
  The method of claim 1, further comprising heating the substrate to a temperature below the melting point of the substrate. Previously presented
5. 12
  Dependent← claim 1
  The method of claim 1, wherein irradiating the substrate with at least three laser beams to locally melt a portion of the substrate drives impurities away from locally melted portion. Previously presented
6. 21
  Dependent← claim 1graphene crystalpolymer coating
  The method of claim 1, further comprising forming a polymer coating on the array of graphene crystals to form [[a]] an array of coated graphene crystals. Currently amended
7. 25
  Dependent← claim 1graphene crystal
  A,,, The method of claim 1, wherein the plurality of laser beams irradiate the substrate at points along a straight line SVG 15032219.05-05-2020.K₉UGORACRXEAPX3.CLM.1.svg 0.17 5.49 Black and white. Currently amended
2
Independent
Canceled
5
Independent
5-9. Canceled
9
Independent
Canceled
13
Independent
13-20. Canceled
20
Independent
Canceled
26
Independent
Canceled

Materials

Materials described outside the worked examples.

graphene crystal

Product Graphene

carbon source

Precursor

methane

Process steps

Additional fabrication and treatment steps described in the patent.

Laser Localized Heating Graphene Growth

Step 1

Process details

steps:irradiate substrate with plurality of laser beams to locally melt a portion of the substrate in the presence of a carbon source to form a nucleation site, offset the plurality of laser beams, decrease power of the plurality of laser beams while maintaining substrate and laser beams stationary to increase graphene crystal size

method:laser irradiation with plurality of laser beams

additional gas:hydrogen gas (optional)

optional steps:

Title: ORDERED GROWTH OF LARGE CRYSTAL GRAPHENE BY LASER-BASED LOCALIZED HEATING FOR HIGH THROUGHPUT PRODUCTION Nucleation Sites/Am ik\ \ H F; A -~-- I-. i ~-E ngineere d Gra in Do m ains * Center of laser spot FIG. 2B k r 150 | Matter42 Literature