Patent
US 9,496,060Patent
Atlas literature
Patent
US 9,496,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1: The overall view of an embodiment for the design of a nanodevice according to the invention with a first graphene layer (graphene layer 1) lying on a BN …
FIG.2: The design of the first graphene layer of the device structure shown in Fig. 1. The central (operating) area of the first graphene layer is made in the …
FIG. 3: The design of the second graphene layer of the device structure shown in Fig. 1. The central area of the layer consists in a periodic array (grating) …
FIG. 4: Side view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Fig. 1.
FIG. 5: Schematic view of the periodic potential U(x) in longitudinal direction x seen by the moving electrons. The potential U(x) is strongly non- sinusoidal …
FIG. 6: An alternative design (symmetric design) of the second graphene layer of the nanodevice shown in Figure 1. The second graphene layer has two metallic …
FIG. 7: Top view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Figur 1 with the (symmetric) design of the second …
FIG. 8: A first embodiment of the nanodevice according to the second aspect of 20 the invention having a one-layer graphene structure with a modulated width of …
FIG. 9: A second embodiment of the nanodevice according to the second aspect of the invention having a one-layer graphene structure with an 25 array of holes …
FIG. 10: Schematic illustration of a thin bended graphene-based nanodevice according to the invention focussing the emitted terahertz radiation to a 30 focus …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A nanodevice for generating electromagnetic radiation in a terahertz frequency range, comprising: a substrate made of a dielectric material; a source contact and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer forming a grating structure of an array of periodic stripes having a predetermined width and a predetermined mutual separation, extending substantially in a transverse transversal direction between a first and second transversal end, the transversal direction that is orthogonal to the longitudinal direction, wherein the electricall y conducting la y er is connected with a metallic gate contact at one of its transversal ends; wherein the first graphene layer and the electrically conducting layer cooperative to generate electromagnetic radiation in the terahertz frequency range when a source direct current (dc) voltage is applied between the source contact and the drain contact, and a [[gate]] smaller direct current (d c) voltage is applied to the elo ctrically conducting layer between the source contact and the gate contact, whereby the grating structure of the electrically conducting la yer serves for coupling the electromagnetic radiation generated out of the nanodevice.
[[A]] The nanodevice according to claim 16, wherein the first graphene layer is structured as a periodic array of narrow stripes extending the longitudinal direction between the source contact and the drain contact.
[[A]] The nanodevice according to claim 16, wherein the width of the periodic stripes in a transversal direction is smaller than 0.5 p m and in particular in the range of 0.1 p m 0.2 pm.
[[A]] The nanodevice according to claim 16, wherein the dielectric layer is made of several monolayers of boron nitride (BN) BN, in particular h BN.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is a second graphene layer.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is connected with a metallic gate contact or with a second drain contact at one transversal end and with a second source contact at its other transversal end.
[[A]] The nanodevice according to claim 16, wherein a number of additional graphene layers is arranged between the dielectric layer and the 4 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi electrically conducting layer, whereby each of the additional graphene layers is separated from neighboring graphene layers by additional dielectric layers.
A method for generating an emission of terahertz radiation, comprising: using a nanodevice according to claim 16 by _ applying a d c source-drain voltage between the source contact and the drain contact; and applying a d c gate-voltage between the source contact and the gate contact to the electrically conducting layer having a periodic grating structure, wherein the source-drain voltage being is much larger than the gate voltage; [[to]] thereby cause causing the nanodevice to generate terahertz radiation to emitted by the nanodevice which is coupled out of the nanodevice by the grating structure of the electrically conducting la y er.
[[A]] The method for generating and emitting radiation according to claim 26, further comprising: using a nanodevice according to claim 16 by applying a d c gate voltage to the electrically conducting layer having a periodic grating structure; and adding an ac voltage signal oscillating with a frequency to the d c gate voltage thereby modulating an intensity of the emitted radiation with the frequency of the ac voltage signal; whereby the nanodevice functions as a transitor and a plane antenna.
[[A]] The nanodevice according to claim [[16]] 17, wherein [[the]] width of the stripes of the first graphene layer in transversal direction is smaller than their length in the longitudinal direction.
A device for generating electromagnetic radiation, comprising: a substrate made of a dielectric material, a source contact and a drain contact, a single graphene layer arranged on the substrate and having a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact, the single graphene layer forming a regular periodic array of narrow stripes extending in the longitudinal direction between the source contact and the drain contact, the narrow stripes having a periodically modulated regular width as measured in a direction orthogonal to the longitudinal direction, the single graphene layer thereby configured to [[emit]] generate radiation in the terahertz frequency range when a dc voltage is applied between the source and drain contacts, wherein modulation of width of the narrow stripes serves for coupling the electromagnetic radiation out of the device.
A method for generating radiation, comprising: using a device including: a substrate made of a dielectric material; a source contract and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer, extending coplanar to the first graphene layer and in a transversal direction between a first and second transversal end, the transveral direction orthogonal to the longitudinal direction, and forming a grating structure of an array of stripes extending in the transversal direction and having an even spacing a grating period of between 0.1 and 0.5 micrometers, wherein the electrically conducting la y er is connected with a metallic gate contact at one of its transversal ends; [[by]] applying a dc source drain voltage between the source contact and the drain 6 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi contact; and applying a gate voltage to the elo ctrically conducting layer between the source contact and the drain contact to generate electromagnetic radiation in [[the]] a terahertz frequency range, which is coupled out of the nanodevice by the grating structure of the electrically conducting lay er.
The method of claim 31 [[32]], further including comprising applying an ac voltage signal to the electrically conducting layer, thereby modulating an intensity of the emitted generated radiation with [[the]] frequency of the ac voltage signal.
The method of claim 31 [[32]], wherein the electrically conducting layer of the device used is a second graphene layer.
Claims 32-33. canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz nanodevice (dual-layer grating)
single-layer graphene terahertz emitter (periodically modulated stripes)
Materials described outside the worked examples.
first graphene layer
C
boron nitride
BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–0.2 µm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,496,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1: The overall view of an embodiment for the design of a nanodevice according to the invention with a first graphene layer (graphene layer 1) lying on a BN …
FIG.2: The design of the first graphene layer of the device structure shown in Fig. 1. The central (operating) area of the first graphene layer is made in the …
FIG. 3: The design of the second graphene layer of the device structure shown in Fig. 1. The central area of the layer consists in a periodic array (grating) …
FIG. 4: Side view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Fig. 1.
FIG. 5: Schematic view of the periodic potential U(x) in longitudinal direction x seen by the moving electrons. The potential U(x) is strongly non- sinusoidal …
FIG. 6: An alternative design (symmetric design) of the second graphene layer of the nanodevice shown in Figure 1. The second graphene layer has two metallic …
FIG. 7: Top view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Figur 1 with the (symmetric) design of the second …
FIG. 8: A first embodiment of the nanodevice according to the second aspect of 20 the invention having a one-layer graphene structure with a modulated width of …
FIG. 9: A second embodiment of the nanodevice according to the second aspect of the invention having a one-layer graphene structure with an 25 array of holes …
FIG. 10: Schematic illustration of a thin bended graphene-based nanodevice according to the invention focussing the emitted terahertz radiation to a 30 focus …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-15. canceled
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A nanodevice for generating electromagnetic radiation in a terahertz frequency range, comprising: a substrate made of a dielectric material; a source contact and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer forming a grating structure of an array of periodic stripes having a predetermined width and a predetermined mutual separation, extending substantially in a transverse transversal direction between a first and second transversal end, the transversal direction that is orthogonal to the longitudinal direction, wherein the electricall y conducting la y er is connected with a metallic gate contact at one of its transversal ends; wherein the first graphene layer and the electrically conducting layer cooperative to generate electromagnetic radiation in the terahertz frequency range when a source direct current (dc) voltage is applied between the source contact and the drain contact, and a [[gate]] smaller direct current (d c) voltage is applied to the elo ctrically conducting layer between the source contact and the gate contact, whereby the grating structure of the electrically conducting la yer serves for coupling the electromagnetic radiation generated out of the nanodevice.
[[A]] The nanodevice according to claim 16, wherein the first graphene layer is structured as a periodic array of narrow stripes extending the longitudinal direction between the source contact and the drain contact.
[[A]] The nanodevice according to claim 16, wherein the width of the periodic stripes in a transversal direction is smaller than 0.5 p m and in particular in the range of 0.1 p m 0.2 pm.
[[A]] The nanodevice according to claim 16, wherein the dielectric layer is made of several monolayers of boron nitride (BN) BN, in particular h BN.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is a second graphene layer.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is connected with a metallic gate contact or with a second drain contact at one transversal end and with a second source contact at its other transversal end.
[[A]] The nanodevice according to claim 16, wherein a number of additional graphene layers is arranged between the dielectric layer and the 4 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi electrically conducting layer, whereby each of the additional graphene layers is separated from neighboring graphene layers by additional dielectric layers.
A method for generating an emission of terahertz radiation, comprising: using a nanodevice according to claim 16 by _ applying a d c source-drain voltage between the source contact and the drain contact; and applying a d c gate-voltage between the source contact and the gate contact to the electrically conducting layer having a periodic grating structure, wherein the source-drain voltage being is much larger than the gate voltage; [[to]] thereby cause causing the nanodevice to generate terahertz radiation to emitted by the nanodevice which is coupled out of the nanodevice by the grating structure of the electrically conducting la y er.
[[A]] The method for generating and emitting radiation according to claim 26, further comprising: using a nanodevice according to claim 16 by applying a d c gate voltage to the electrically conducting layer having a periodic grating structure; and adding an ac voltage signal oscillating with a frequency to the d c gate voltage thereby modulating an intensity of the emitted radiation with the frequency of the ac voltage signal; whereby the nanodevice functions as a transitor and a plane antenna.
[[A]] The nanodevice according to claim [[16]] 17, wherein [[the]] width of the stripes of the first graphene layer in transversal direction is smaller than their length in the longitudinal direction.
A device for generating electromagnetic radiation, comprising: a substrate made of a dielectric material, a source contact and a drain contact, a single graphene layer arranged on the substrate and having a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact, the single graphene layer forming a regular periodic array of narrow stripes extending in the longitudinal direction between the source contact and the drain contact, the narrow stripes having a periodically modulated regular width as measured in a direction orthogonal to the longitudinal direction, the single graphene layer thereby configured to [[emit]] generate radiation in the terahertz frequency range when a dc voltage is applied between the source and drain contacts, wherein modulation of width of the narrow stripes serves for coupling the electromagnetic radiation out of the device.
A method for generating radiation, comprising: using a device including: a substrate made of a dielectric material; a source contract and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer, extending coplanar to the first graphene layer and in a transversal direction between a first and second transversal end, the transveral direction orthogonal to the longitudinal direction, and forming a grating structure of an array of stripes extending in the transversal direction and having an even spacing a grating period of between 0.1 and 0.5 micrometers, wherein the electrically conducting la y er is connected with a metallic gate contact at one of its transversal ends; [[by]] applying a dc source drain voltage between the source contact and the drain 6 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi contact; and applying a gate voltage to the elo ctrically conducting layer between the source contact and the drain contact to generate electromagnetic radiation in [[the]] a terahertz frequency range, which is coupled out of the nanodevice by the grating structure of the electrically conducting lay er.
The method of claim 31 [[32]], further including comprising applying an ac voltage signal to the electrically conducting layer, thereby modulating an intensity of the emitted generated radiation with [[the]] frequency of the ac voltage signal.
The method of claim 31 [[32]], wherein the electrically conducting layer of the device used is a second graphene layer.
Claims 32-33. canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz nanodevice (dual-layer grating)
single-layer graphene terahertz emitter (periodically modulated stripes)
Materials described outside the worked examples.
first graphene layer
C
boron nitride
BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–0.2 µm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,496,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1: The overall view of an embodiment for the design of a nanodevice according to the invention with a first graphene layer (graphene layer 1) lying on a BN …
FIG.2: The design of the first graphene layer of the device structure shown in Fig. 1. The central (operating) area of the first graphene layer is made in the …
FIG. 3: The design of the second graphene layer of the device structure shown in Fig. 1. The central area of the layer consists in a periodic array (grating) …
FIG. 4: Side view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Fig. 1.
FIG. 5: Schematic view of the periodic potential U(x) in longitudinal direction x seen by the moving electrons. The potential U(x) is strongly non- sinusoidal …
FIG. 6: An alternative design (symmetric design) of the second graphene layer of the nanodevice shown in Figure 1. The second graphene layer has two metallic …
FIG. 7: Top view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Figur 1 with the (symmetric) design of the second …
FIG. 8: A first embodiment of the nanodevice according to the second aspect of 20 the invention having a one-layer graphene structure with a modulated width of …
FIG. 9: A second embodiment of the nanodevice according to the second aspect of the invention having a one-layer graphene structure with an 25 array of holes …
FIG. 10: Schematic illustration of a thin bended graphene-based nanodevice according to the invention focussing the emitted terahertz radiation to a 30 focus …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-15. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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A nanodevice for generating electromagnetic radiation in a terahertz frequency range, comprising: a substrate made of a dielectric material; a source contact and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer forming a grating structure of an array of periodic stripes having a predetermined width and a predetermined mutual separation, extending substantially in a transverse transversal direction between a first and second transversal end, the transversal direction that is orthogonal to the longitudinal direction, wherein the electricall y conducting la y er is connected with a metallic gate contact at one of its transversal ends; wherein the first graphene layer and the electrically conducting layer cooperative to generate electromagnetic radiation in the terahertz frequency range when a source direct current (dc) voltage is applied between the source contact and the drain contact, and a [[gate]] smaller direct current (d c) voltage is applied to the elo ctrically conducting layer between the source contact and the gate contact, whereby the grating structure of the electrically conducting la yer serves for coupling the electromagnetic radiation generated out of the nanodevice.
[[A]] The nanodevice according to claim 16, wherein the first graphene layer is structured as a periodic array of narrow stripes extending the longitudinal direction between the source contact and the drain contact.
[[A]] The nanodevice according to claim 16, wherein the width of the periodic stripes in a transversal direction is smaller than 0.5 p m and in particular in the range of 0.1 p m 0.2 pm.
[[A]] The nanodevice according to claim 16, wherein the dielectric layer is made of several monolayers of boron nitride (BN) BN, in particular h BN.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is a second graphene layer.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is connected with a metallic gate contact or with a second drain contact at one transversal end and with a second source contact at its other transversal end.
[[A]] The nanodevice according to claim 16, wherein a number of additional graphene layers is arranged between the dielectric layer and the 4 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi electrically conducting layer, whereby each of the additional graphene layers is separated from neighboring graphene layers by additional dielectric layers.
A method for generating an emission of terahertz radiation, comprising: using a nanodevice according to claim 16 by _ applying a d c source-drain voltage between the source contact and the drain contact; and applying a d c gate-voltage between the source contact and the gate contact to the electrically conducting layer having a periodic grating structure, wherein the source-drain voltage being is much larger than the gate voltage; [[to]] thereby cause causing the nanodevice to generate terahertz radiation to emitted by the nanodevice which is coupled out of the nanodevice by the grating structure of the electrically conducting la y er.
[[A]] The method for generating and emitting radiation according to claim 26, further comprising: using a nanodevice according to claim 16 by applying a d c gate voltage to the electrically conducting layer having a periodic grating structure; and adding an ac voltage signal oscillating with a frequency to the d c gate voltage thereby modulating an intensity of the emitted radiation with the frequency of the ac voltage signal; whereby the nanodevice functions as a transitor and a plane antenna.
[[A]] The nanodevice according to claim [[16]] 17, wherein [[the]] width of the stripes of the first graphene layer in transversal direction is smaller than their length in the longitudinal direction.
A device for generating electromagnetic radiation, comprising: a substrate made of a dielectric material, a source contact and a drain contact, a single graphene layer arranged on the substrate and having a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact, the single graphene layer forming a regular periodic array of narrow stripes extending in the longitudinal direction between the source contact and the drain contact, the narrow stripes having a periodically modulated regular width as measured in a direction orthogonal to the longitudinal direction, the single graphene layer thereby configured to [[emit]] generate radiation in the terahertz frequency range when a dc voltage is applied between the source and drain contacts, wherein modulation of width of the narrow stripes serves for coupling the electromagnetic radiation out of the device.
A method for generating radiation, comprising: using a device including: a substrate made of a dielectric material; a source contract and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer, extending coplanar to the first graphene layer and in a transversal direction between a first and second transversal end, the transveral direction orthogonal to the longitudinal direction, and forming a grating structure of an array of stripes extending in the transversal direction and having an even spacing a grating period of between 0.1 and 0.5 micrometers, wherein the electrically conducting la y er is connected with a metallic gate contact at one of its transversal ends; [[by]] applying a dc source drain voltage between the source contact and the drain 6 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi contact; and applying a gate voltage to the elo ctrically conducting layer between the source contact and the drain contact to generate electromagnetic radiation in [[the]] a terahertz frequency range, which is coupled out of the nanodevice by the grating structure of the electrically conducting lay er.
The method of claim 31 [[32]], further including comprising applying an ac voltage signal to the electrically conducting layer, thereby modulating an intensity of the emitted generated radiation with [[the]] frequency of the ac voltage signal.
The method of claim 31 [[32]], wherein the electrically conducting layer of the device used is a second graphene layer.
Claims 32-33. canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz nanodevice (dual-layer grating)
single-layer graphene terahertz emitter (periodically modulated stripes)
Materials described outside the worked examples.
first graphene layer
C
boron nitride
BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–0.2 µm | — |
Thickness |
Patent
Atlas literature
Patent
US 9,496,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1: The overall view of an embodiment for the design of a nanodevice according to the invention with a first graphene layer (graphene layer 1) lying on a BN …
FIG.2: The design of the first graphene layer of the device structure shown in Fig. 1. The central (operating) area of the first graphene layer is made in the …
FIG. 3: The design of the second graphene layer of the device structure shown in Fig. 1. The central area of the layer consists in a periodic array (grating) …
FIG. 4: Side view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Fig. 1.
FIG. 5: Schematic view of the periodic potential U(x) in longitudinal direction x seen by the moving electrons. The potential U(x) is strongly non- sinusoidal …
FIG. 6: An alternative design (symmetric design) of the second graphene layer of the nanodevice shown in Figure 1. The second graphene layer has two metallic …
FIG. 7: Top view of one of the operation modes (generator mode) of the graphene-based nanodevice shown in Figur 1 with the (symmetric) design of the second …
FIG. 8: A first embodiment of the nanodevice according to the second aspect of 20 the invention having a one-layer graphene structure with a modulated width of …
FIG. 9: A second embodiment of the nanodevice according to the second aspect of the invention having a one-layer graphene structure with an 25 array of holes …
FIG. 10: Schematic illustration of a thin bended graphene-based nanodevice according to the invention focussing the emitted terahertz radiation to a 30 focus …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-15. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A nanodevice for generating electromagnetic radiation in a terahertz frequency range, comprising: a substrate made of a dielectric material; a source contact and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer forming a grating structure of an array of periodic stripes having a predetermined width and a predetermined mutual separation, extending substantially in a transverse transversal direction between a first and second transversal end, the transversal direction that is orthogonal to the longitudinal direction, wherein the electricall y conducting la y er is connected with a metallic gate contact at one of its transversal ends; wherein the first graphene layer and the electrically conducting layer cooperative to generate electromagnetic radiation in the terahertz frequency range when a source direct current (dc) voltage is applied between the source contact and the drain contact, and a [[gate]] smaller direct current (d c) voltage is applied to the elo ctrically conducting layer between the source contact and the gate contact, whereby the grating structure of the electrically conducting la yer serves for coupling the electromagnetic radiation generated out of the nanodevice.
[[A]] The nanodevice according to claim 16, wherein the first graphene layer is structured as a periodic array of narrow stripes extending the longitudinal direction between the source contact and the drain contact.
[[A]] The nanodevice according to claim 16, wherein the width of the periodic stripes in a transversal direction is smaller than 0.5 p m and in particular in the range of 0.1 p m 0.2 pm.
[[A]] The nanodevice according to claim 16, wherein the dielectric layer is made of several monolayers of boron nitride (BN) BN, in particular h BN.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is a second graphene layer.
[[A]] The nanodevice according to claim 16, wherein the electrically conducting layer is connected with a metallic gate contact or with a second drain contact at one transversal end and with a second source contact at its other transversal end.
[[A]] The nanodevice according to claim 16, wherein a number of additional graphene layers is arranged between the dielectric layer and the 4 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi electrically conducting layer, whereby each of the additional graphene layers is separated from neighboring graphene layers by additional dielectric layers.
A method for generating an emission of terahertz radiation, comprising: using a nanodevice according to claim 16 by _ applying a d c source-drain voltage between the source contact and the drain contact; and applying a d c gate-voltage between the source contact and the gate contact to the electrically conducting layer having a periodic grating structure, wherein the source-drain voltage being is much larger than the gate voltage; [[to]] thereby cause causing the nanodevice to generate terahertz radiation to emitted by the nanodevice which is coupled out of the nanodevice by the grating structure of the electrically conducting la y er.
[[A]] The method for generating and emitting radiation according to claim 26, further comprising: using a nanodevice according to claim 16 by applying a d c gate voltage to the electrically conducting layer having a periodic grating structure; and adding an ac voltage signal oscillating with a frequency to the d c gate voltage thereby modulating an intensity of the emitted radiation with the frequency of the ac voltage signal; whereby the nanodevice functions as a transitor and a plane antenna.
[[A]] The nanodevice according to claim [[16]] 17, wherein [[the]] width of the stripes of the first graphene layer in transversal direction is smaller than their length in the longitudinal direction.
A device for generating electromagnetic radiation, comprising: a substrate made of a dielectric material, a source contact and a drain contact, a single graphene layer arranged on the substrate and having a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact, the single graphene layer forming a regular periodic array of narrow stripes extending in the longitudinal direction between the source contact and the drain contact, the narrow stripes having a periodically modulated regular width as measured in a direction orthogonal to the longitudinal direction, the single graphene layer thereby configured to [[emit]] generate radiation in the terahertz frequency range when a dc voltage is applied between the source and drain contacts, wherein modulation of width of the narrow stripes serves for coupling the electromagnetic radiation out of the device.
A method for generating radiation, comprising: using a device including: a substrate made of a dielectric material; a source contract and a drain contact; a first graphene layer arranged on the substrate and extending in a longitudinal direction between a first longitudinal end being electrically connected with the source contact and a second longitudinal end being connected with the drain contact; a dielectric layer arranged on or covering the first graphene layer; and an electrically conducting layer arranged on the dielectric layer, extending coplanar to the first graphene layer and in a transversal direction between a first and second transversal end, the transveral direction orthogonal to the longitudinal direction, and forming a grating structure of an array of stripes extending in the transversal direction and having an even spacing a grating period of between 0.1 and 0.5 micrometers, wherein the electrically conducting la y er is connected with a metallic gate contact at one of its transversal ends; [[by]] applying a dc source drain voltage between the source contact and the drain 6 Applicant: S. Mikhailov Application No.: 14/363,200 Examiner: J. J. Choi contact; and applying a gate voltage to the elo ctrically conducting layer between the source contact and the drain contact to generate electromagnetic radiation in [[the]] a terahertz frequency range, which is coupled out of the nanodevice by the grating structure of the electrically conducting lay er.
The method of claim 31 [[32]], further including comprising applying an ac voltage signal to the electrically conducting layer, thereby modulating an intensity of the emitted generated radiation with [[the]] frequency of the ac voltage signal.
The method of claim 31 [[32]], wherein the electrically conducting layer of the device used is a second graphene layer.
Claims 32-33. canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz nanodevice (dual-layer grating)
single-layer graphene terahertz emitter (periodically modulated stripes)
Materials described outside the worked examples.
first graphene layer
C
boron nitride
BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–0.2 µm | — |
Thickness |
dielectric substrate
| — |
Voltage | 1–10 V | — |
dielectric substrate
| — |
Voltage | 1–10 V | — |
dielectric substrate
| — |
Voltage | 1–10 V | — |
dielectric substrate
| — |
Voltage | 1–10 V | — |
