Patent
US 10,673,426Switch Bootstrap Charging Circuit Suitable for Gate Drive Circuit of GaN Power Device
Xin MING
US
Copyright © 2026 Matter42. All rights reserved.
Patent
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Patent
US 10,673,426Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power devices comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage metal-oxide-semiconductor field effect transistor (MOSFET), a high-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a first PMOS transistor, and the high-voltage MOSFET is a first NMOS transistor configured to withstand a high drain-to-source (VDS) voltage; the low-voltage MOSFET control module generates a first control signal and a gate drive signal of the low-voltage MOSFET according to a first undervoltage signal and a gate drive signal of the lower power transistor, wherein, the first undervoltage signal is an undervoltage protection signal generated during a power on of a power supply voltage; when the first undervoltage signal is at a low level, the first control signal and the gate drive signal of the low-voltage MOSFET are at the low level; when the first undervoltage signal is at a high level, the first control signal and the gate drive signal of the lower power transistor are at a same logic level, and the gate drive signal of the low-voltage MOSFET and the gate drive signal of the lower power transistor are at reverse logic levels; a gate of the low-voltage MOSFET is connected to the gate drive signal of the low-voltage MOSFET, a source of the low-voltage MOSFET is connected to the power supply voltage, and a drain of the low-voltage MOSFET is connected to a source of the high-voltage MOSFET; the high-voltage MOSFET control module comprises a second NMOS transistor, a first inverter, a second inverter, a first capacitor, a second capacitor, and a first diode; an input terminal of the first inverter is connected to the first control signal, and an output terminal of the first inverter is connected to an input terminal of the second i nverter, and the output terminal of the first inverter is connected to a cathode of the first diode and a gate of the second NMOS transistor through the first capacitor; an anode of the first diode and a source of the second NMOS transistor are connected to the power supply voltage; and a gate of the high-voltage MOSFET is connected to a drain of the second NMOS transistor, the gate of the high-voltage MOSFET is connected to the output terminal of the second inverter through the second capacitor, and a drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power device comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage MOSFET, a high-voltage MOSFET, a bootstrap capacitor, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a PMOS transistor, and the high-voltage MOSFET is a high-voltage PMOS transistor; a source of the low-voltage MOSFET is connected to a power supply voltage, a drain of the low-voltage MOSFET is connected to a drain of the high-voltage MOSFET, and a gate of the low-voltage MOSFET is connected to a gate drive signal of the low-voltage MOSFET; a gate of the high-voltage MOSFET is connected to a gate drive signal of the high-voltage MOSFET, a source of the high-voltage MOSFET is connected to an upper electrode plate of the bootstrap capacitor, and the source of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit; a lower electrode plate of the bootstrap capacitor is connected to a switch node of the gate drive circuit of the GaN power devices; the low-voltage MOSFET control module is enabled by an enable signal to generate the gate drive signal of the low-voltage MOSFET under a control of a first low-side control signal; the gate drive signal of the low-voltage MOSFET and the first low-side control signal are at reverse logic levels; the first low-side control signal and a gate drive signal of the lower power transistor are at a first same logic level; the enable signal and the first undervoltage signal are at a second same logic level; and the first undervoltage signal is an undervoltage signal of the power supply voltage; the high-voltage MOSFET control module comprises a zero-voltage sensing module, a high-voltage switching logic control module, and a high-voltage level-shift module; the zero-voltage sensing module is enabled by the enable signal, and the zero-voltage sensing module samples a signal at a switch node of the gate drive circuit of the GaN power devices under a control of a second low-side control signal and generates a zero-voltage sensing signal; if the signal at the switch node of the gate drive circuit of the GaN power devices has a high voltage, the zero-voltage sensing signal is at a first low level; if the signal at the switch node of the gate drive circuit of the GaN power devices is essentially zero, the zero-voltage sensing signal is at a high level; the second low-side control signal and the gate drive signal of the lower power transistor are at a third same logic level, and the second low-side control signal is obtained by delaying the first low-side control signal; the high-voltage switching logic control module is enabled by the enable signal for generating a determination signal according to the zero-voltage sensing signal and the first low-side control signal; the high-voltage level-shift module is configured to shift a power rail of the determination signal from power supply voltage to ground to output terminal signal of the switch bootstrap charging circuit to the signal at the switch node; the high-voltage switching logic control module generates the gate drive signal of the high-voltage MOSFET according to the determination signal processed by the high-voltage level-shift module and the second undervoltage signal; the gate drive signal of the high-voltage MOSFET is at a second low level only when the second undervoltage signal, the first low-side control signal, and the zero-voltage sensing signal are all at the high level; otherwise, the gate drive signal of the high-voltage MOSFET is at the high level; and the second undervoltage signal is an undervoltage signal between the output terminal of the switch bootstrap charging circuit and the switch node.
The switch bootstrap charging circuit suitable for the gate drive circuit of the G aN power device of claim 2, wherein, the zero-voltage sensing module comprises a third inverter, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a twenty-sixth NMOS transistor, a twenty-seventh NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a fifteenth NMOS transistor, a sixteenth NMOS transistor, a seventeenth NMOS transistor, an eighteenth NMOS transistor, a nineteenth NMOS transistor, a twentieth NMOS transistor, a twenty-first NMOS transistor, a twenty-second NMOS transistor, a twenty-third NMOS transistor, a twenty-fourth NMOS transistor, a twenty-fifth NMOS transistor, an eighteenth PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor, an eleventh PMOS transistor, a twelfth PMOS transistor, a thirteenth PMOS transistor, a fourteenth PMOS transistor, a fifteenth PMOS transistor, a sixteenth PMOS transistor, and a seventeenth PMOS transistor, wherein, the twenty-fifth NMOS transistor is a high voltage transistor; one end of the tenth resistor is connected to the switch node of the gate drive circuit of the G aN power devices, and an other end of the tenth resistor is connected to a drain of the twenty-fifth NMOS transistor; a gate of the twentieth NMOS transistor is connected to gates of the twenty-fifth NMOS transistor and the twenty-first NMOS transistor and the gate of the twentieth NMOS transistor is connected to the second low-side control signal, a source of the twentieth NMOS transistor is connected to a source of the twenty-fifth NMOS transistor, and a drain of the twentieth NMOS transistor is connected to a source of the twenty-first NMOS transistor and a drain of the twenty-fourth NMOS transistor; a drain of the twenty-first NMOS transistor is connected to a drain of the twenty-third NMOS transistor and outputs a sampling signal; a gate of the twenty-second NMOS transistor is connected to gates of the twenty-third NMOS transistor and the twenty-fourth NMOS transistor and the gate of the twenty-second NMOS transistor is connected to a level-reversed signal of the second low-side control signal, a drain of the twenty-second NMOS transistor is connected to a first reference voltage, and a source of the twenty-second NMOS transistor is connected to a source of the twenty-third NMOS transistor; a source of the twenty-fourth NMOS transistor is grounded; a gate of the sixteenth PMOS transistor is connected to the sampling signal, a source of the sixteenth PMOS transistor is connected to a source of the seventeenth PMOS transistor, the source of the sixteenth PMOS transistor is connected to a drain of the fifth PMOS transistor through the third resistor, and a drain of the sixteenth PMOS transistor is connected to a source of the eighth NMOS transistor and a drain of the ninth NMOS transistor; a gate of the seventeenth PMOS transistor is connected to a second reference voltage, and a drain of the seventeenth PMOS transistor is connected to a source of the tenth NMOS transistor and a drain of the eleventh NMOS transistor; a source of the fifth PMOS transistor is connected to a drain of the sixth PMOS transistor; a gate of the ninth NMOS transistor is connected to a gate of the eleventh NMOS transistor; a gate of the eighth NMOS transistor is connected to a gate of the tenth NMOS transistor, a drain of the eighth NMOS transistor is connected to a gate of the twelfth NMOS transistor, and the drain of the eighth NMOS transistor is connected to a gate and a drain of the seventh PMOS transistor through the fourth resistor; one end of the fifth resistor is connected to a gate of the seventh PMOS transistor, and an other end of the fifth resistor is connected to a drain of the tenth NMOS transistor and a gate of the thirteenth NMOS transistor; a gate of the twenty-sixth NMOS transistor is connected to a level-reversed signal of the first undervoltage signal, a drain of the twenty-sixth NMOS transistor is connected to a gate of the third NMOS transistor, a gate and a drain of the twenty-seventh NMOS transistor, and a bias signal, a source of the twenty-sixth NMOS transistor is connected to sources of the twenty-seventh NMOS transistor, the third NMOS transistor, the fifth NMOS transistor, the seventh NMOS transistor, the ninth NMOS transistor, the eleventh NMOS transistor, the fifteenth NMOS transistor, the sixteenth NMOS transistor, and the seventeenth NMOS transistor, and is grounded; a gate of the second PMOS transistor is connected to gates of the third PMOS transistor, the fifth PMOS transistor, and the tenth PMOS transistor, and a drain of the third NMOS transistor, and the gate of the second PMOS transistor is connected to a drain of the second PMOS transistor and gates of the eighteenth PMOS transistor, the fourth PMOS transistor, the sixth PMOS transistor, and the ninth PMOS transistor through the first resistor, and a source of the second PMOS transistor is connected to a drain of the eighteenth PMOS transistor; a drain of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a source of the fourth PMOS transistor is connected to sources of the eighteenth PMOS transistor, the sixth PMOS transistor, the seventh PMOS transistor, the eighth PMOS transistor, the ninth PMOS transistor, the eleventh PMOS transistor, and the fourteenth PMOS transistor, and is connected to the power supply voltage; a gate of the fourth NMOS transistor is connected to gates of the sixth NMOS transistor and the fourteenth NMOS transistor and a drain of the third PMOS transistor, and the gate of the fourth NMOS transistor is connected to a drain of the fourth NMOS transistor and gates of the fifth NMOS transistor, the seventh NMOS transistor, and the fifteenth NMOS transistor through the second resistor, and a source of the fourth NMOS transistor is connected to a drain of the fifth NMOS transistor; a source of the fourteenth NMOS transistor is connected to a drain of the fifteenth NMOS transistor, and a drain of the fourteenth NMOS transistor is connected to sources of the twelfth NMOS transistor and the thirteenth NMOS transistor; one end of the sixth resistor is connected to a gate and a drain of the eighth PMOS transistor and one end of the seventh resistor, and an other end of the sixth resistor is connected to a drain of the twelfth NMOS transistor and gates of the thirteenth PMOS transistor and the eighteenth NMOS transistor; a gate of the twelfth PMOS transistor is connected to an other end of the seventh resistor, a drain of the thirteenth NMOS transistor, and a gate of the nineteenth NMOS transistor; a source of the twelfth PMOS transistor is connected to a source of the thirteenth PMOS transistor and a drain of the tenth PMOS transistor; a drain of the twelfth PMOS transistor is connected to a gate and a drain of the sixteenth NMOS transistor, and the drain of the twelfth PMOS transistor is connected to a drain of the thirteenth PMOS transistor and a gate of the seventeenth NMOS transistor through the eighth resistor; a source of the tenth PMOS transistor is connected to a drain of the ninth PMOS transistor; a gate of the fourteenth PMOS transistor is connected to a drain of the eighteenth NMOS transistor, and the gate of the fourteenth PMOS transistor is connected to a gate and a drain of the eleventh PMOS transistor and a drain of the nineteenth NMOS transistor through the ninth resistor; a drain of the fourteenth PMOS transistor is connected to drains of the seventeenth NMOS transistor and the fifteenth PMOS transistor and an input terminal of the third inverter; a drain of the sixth NMOS transistor is connected to sources of the eighteenth NMOS transistor and the nineteenth NMOS transistor, and a source of the sixth NMOS transistor is connected to a drain of the seventh NMOS transistor; a gate of the fifteenth PMOS transistor is connected to the enable signal, and a source of the fifteenth PMOS transistor is connected to the power supply voltage; and an output terminal of the third inverter outputs the zero-voltage sensing signal.
Layer stacks claimed or described, ordered top of device to substrate.
Switch bootstrap charging circuit (high-voltage NMOS variant) for GaN gate drive circuit
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
Patent
Atlas literature
Patent
US 10,673,426Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power devices comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage metal-oxide-semiconductor field effect transistor (MOSFET), a high-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a first PMOS transistor, and the high-voltage MOSFET is a first NMOS transistor configured to withstand a high drain-to-source (VDS) voltage; the low-voltage MOSFET control module generates a first control signal and a gate drive signal of the low-voltage MOSFET according to a first undervoltage signal and a gate drive signal of the lower power transistor, wherein, the first undervoltage signal is an undervoltage protection signal generated during a power on of a power supply voltage; when the first undervoltage signal is at a low level, the first control signal and the gate drive signal of the low-voltage MOSFET are at the low level; when the first undervoltage signal is at a high level, the first control signal and the gate drive signal of the lower power transistor are at a same logic level, and the gate drive signal of the low-voltage MOSFET and the gate drive signal of the lower power transistor are at reverse logic levels; a gate of the low-voltage MOSFET is connected to the gate drive signal of the low-voltage MOSFET, a source of the low-voltage MOSFET is connected to the power supply voltage, and a drain of the low-voltage MOSFET is connected to a source of the high-voltage MOSFET; the high-voltage MOSFET control module comprises a second NMOS transistor, a first inverter, a second inverter, a first capacitor, a second capacitor, and a first diode; an input terminal of the first inverter is connected to the first control signal, and an output terminal of the first inverter is connected to an input terminal of the second i nverter, and the output terminal of the first inverter is connected to a cathode of the first diode and a gate of the second NMOS transistor through the first capacitor; an anode of the first diode and a source of the second NMOS transistor are connected to the power supply voltage; and a gate of the high-voltage MOSFET is connected to a drain of the second NMOS transistor, the gate of the high-voltage MOSFET is connected to the output terminal of the second inverter through the second capacitor, and a drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power device comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage MOSFET, a high-voltage MOSFET, a bootstrap capacitor, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a PMOS transistor, and the high-voltage MOSFET is a high-voltage PMOS transistor; a source of the low-voltage MOSFET is connected to a power supply voltage, a drain of the low-voltage MOSFET is connected to a drain of the high-voltage MOSFET, and a gate of the low-voltage MOSFET is connected to a gate drive signal of the low-voltage MOSFET; a gate of the high-voltage MOSFET is connected to a gate drive signal of the high-voltage MOSFET, a source of the high-voltage MOSFET is connected to an upper electrode plate of the bootstrap capacitor, and the source of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit; a lower electrode plate of the bootstrap capacitor is connected to a switch node of the gate drive circuit of the GaN power devices; the low-voltage MOSFET control module is enabled by an enable signal to generate the gate drive signal of the low-voltage MOSFET under a control of a first low-side control signal; the gate drive signal of the low-voltage MOSFET and the first low-side control signal are at reverse logic levels; the first low-side control signal and a gate drive signal of the lower power transistor are at a first same logic level; the enable signal and the first undervoltage signal are at a second same logic level; and the first undervoltage signal is an undervoltage signal of the power supply voltage; the high-voltage MOSFET control module comprises a zero-voltage sensing module, a high-voltage switching logic control module, and a high-voltage level-shift module; the zero-voltage sensing module is enabled by the enable signal, and the zero-voltage sensing module samples a signal at a switch node of the gate drive circuit of the GaN power devices under a control of a second low-side control signal and generates a zero-voltage sensing signal; if the signal at the switch node of the gate drive circuit of the GaN power devices has a high voltage, the zero-voltage sensing signal is at a first low level; if the signal at the switch node of the gate drive circuit of the GaN power devices is essentially zero, the zero-voltage sensing signal is at a high level; the second low-side control signal and the gate drive signal of the lower power transistor are at a third same logic level, and the second low-side control signal is obtained by delaying the first low-side control signal; the high-voltage switching logic control module is enabled by the enable signal for generating a determination signal according to the zero-voltage sensing signal and the first low-side control signal; the high-voltage level-shift module is configured to shift a power rail of the determination signal from power supply voltage to ground to output terminal signal of the switch bootstrap charging circuit to the signal at the switch node; the high-voltage switching logic control module generates the gate drive signal of the high-voltage MOSFET according to the determination signal processed by the high-voltage level-shift module and the second undervoltage signal; the gate drive signal of the high-voltage MOSFET is at a second low level only when the second undervoltage signal, the first low-side control signal, and the zero-voltage sensing signal are all at the high level; otherwise, the gate drive signal of the high-voltage MOSFET is at the high level; and the second undervoltage signal is an undervoltage signal between the output terminal of the switch bootstrap charging circuit and the switch node.
The switch bootstrap charging circuit suitable for the gate drive circuit of the G aN power device of claim 2, wherein, the zero-voltage sensing module comprises a third inverter, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a twenty-sixth NMOS transistor, a twenty-seventh NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a fifteenth NMOS transistor, a sixteenth NMOS transistor, a seventeenth NMOS transistor, an eighteenth NMOS transistor, a nineteenth NMOS transistor, a twentieth NMOS transistor, a twenty-first NMOS transistor, a twenty-second NMOS transistor, a twenty-third NMOS transistor, a twenty-fourth NMOS transistor, a twenty-fifth NMOS transistor, an eighteenth PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor, an eleventh PMOS transistor, a twelfth PMOS transistor, a thirteenth PMOS transistor, a fourteenth PMOS transistor, a fifteenth PMOS transistor, a sixteenth PMOS transistor, and a seventeenth PMOS transistor, wherein, the twenty-fifth NMOS transistor is a high voltage transistor; one end of the tenth resistor is connected to the switch node of the gate drive circuit of the G aN power devices, and an other end of the tenth resistor is connected to a drain of the twenty-fifth NMOS transistor; a gate of the twentieth NMOS transistor is connected to gates of the twenty-fifth NMOS transistor and the twenty-first NMOS transistor and the gate of the twentieth NMOS transistor is connected to the second low-side control signal, a source of the twentieth NMOS transistor is connected to a source of the twenty-fifth NMOS transistor, and a drain of the twentieth NMOS transistor is connected to a source of the twenty-first NMOS transistor and a drain of the twenty-fourth NMOS transistor; a drain of the twenty-first NMOS transistor is connected to a drain of the twenty-third NMOS transistor and outputs a sampling signal; a gate of the twenty-second NMOS transistor is connected to gates of the twenty-third NMOS transistor and the twenty-fourth NMOS transistor and the gate of the twenty-second NMOS transistor is connected to a level-reversed signal of the second low-side control signal, a drain of the twenty-second NMOS transistor is connected to a first reference voltage, and a source of the twenty-second NMOS transistor is connected to a source of the twenty-third NMOS transistor; a source of the twenty-fourth NMOS transistor is grounded; a gate of the sixteenth PMOS transistor is connected to the sampling signal, a source of the sixteenth PMOS transistor is connected to a source of the seventeenth PMOS transistor, the source of the sixteenth PMOS transistor is connected to a drain of the fifth PMOS transistor through the third resistor, and a drain of the sixteenth PMOS transistor is connected to a source of the eighth NMOS transistor and a drain of the ninth NMOS transistor; a gate of the seventeenth PMOS transistor is connected to a second reference voltage, and a drain of the seventeenth PMOS transistor is connected to a source of the tenth NMOS transistor and a drain of the eleventh NMOS transistor; a source of the fifth PMOS transistor is connected to a drain of the sixth PMOS transistor; a gate of the ninth NMOS transistor is connected to a gate of the eleventh NMOS transistor; a gate of the eighth NMOS transistor is connected to a gate of the tenth NMOS transistor, a drain of the eighth NMOS transistor is connected to a gate of the twelfth NMOS transistor, and the drain of the eighth NMOS transistor is connected to a gate and a drain of the seventh PMOS transistor through the fourth resistor; one end of the fifth resistor is connected to a gate of the seventh PMOS transistor, and an other end of the fifth resistor is connected to a drain of the tenth NMOS transistor and a gate of the thirteenth NMOS transistor; a gate of the twenty-sixth NMOS transistor is connected to a level-reversed signal of the first undervoltage signal, a drain of the twenty-sixth NMOS transistor is connected to a gate of the third NMOS transistor, a gate and a drain of the twenty-seventh NMOS transistor, and a bias signal, a source of the twenty-sixth NMOS transistor is connected to sources of the twenty-seventh NMOS transistor, the third NMOS transistor, the fifth NMOS transistor, the seventh NMOS transistor, the ninth NMOS transistor, the eleventh NMOS transistor, the fifteenth NMOS transistor, the sixteenth NMOS transistor, and the seventeenth NMOS transistor, and is grounded; a gate of the second PMOS transistor is connected to gates of the third PMOS transistor, the fifth PMOS transistor, and the tenth PMOS transistor, and a drain of the third NMOS transistor, and the gate of the second PMOS transistor is connected to a drain of the second PMOS transistor and gates of the eighteenth PMOS transistor, the fourth PMOS transistor, the sixth PMOS transistor, and the ninth PMOS transistor through the first resistor, and a source of the second PMOS transistor is connected to a drain of the eighteenth PMOS transistor; a drain of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a source of the fourth PMOS transistor is connected to sources of the eighteenth PMOS transistor, the sixth PMOS transistor, the seventh PMOS transistor, the eighth PMOS transistor, the ninth PMOS transistor, the eleventh PMOS transistor, and the fourteenth PMOS transistor, and is connected to the power supply voltage; a gate of the fourth NMOS transistor is connected to gates of the sixth NMOS transistor and the fourteenth NMOS transistor and a drain of the third PMOS transistor, and the gate of the fourth NMOS transistor is connected to a drain of the fourth NMOS transistor and gates of the fifth NMOS transistor, the seventh NMOS transistor, and the fifteenth NMOS transistor through the second resistor, and a source of the fourth NMOS transistor is connected to a drain of the fifth NMOS transistor; a source of the fourteenth NMOS transistor is connected to a drain of the fifteenth NMOS transistor, and a drain of the fourteenth NMOS transistor is connected to sources of the twelfth NMOS transistor and the thirteenth NMOS transistor; one end of the sixth resistor is connected to a gate and a drain of the eighth PMOS transistor and one end of the seventh resistor, and an other end of the sixth resistor is connected to a drain of the twelfth NMOS transistor and gates of the thirteenth PMOS transistor and the eighteenth NMOS transistor; a gate of the twelfth PMOS transistor is connected to an other end of the seventh resistor, a drain of the thirteenth NMOS transistor, and a gate of the nineteenth NMOS transistor; a source of the twelfth PMOS transistor is connected to a source of the thirteenth PMOS transistor and a drain of the tenth PMOS transistor; a drain of the twelfth PMOS transistor is connected to a gate and a drain of the sixteenth NMOS transistor, and the drain of the twelfth PMOS transistor is connected to a drain of the thirteenth PMOS transistor and a gate of the seventeenth NMOS transistor through the eighth resistor; a source of the tenth PMOS transistor is connected to a drain of the ninth PMOS transistor; a gate of the fourteenth PMOS transistor is connected to a drain of the eighteenth NMOS transistor, and the gate of the fourteenth PMOS transistor is connected to a gate and a drain of the eleventh PMOS transistor and a drain of the nineteenth NMOS transistor through the ninth resistor; a drain of the fourteenth PMOS transistor is connected to drains of the seventeenth NMOS transistor and the fifteenth PMOS transistor and an input terminal of the third inverter; a drain of the sixth NMOS transistor is connected to sources of the eighteenth NMOS transistor and the nineteenth NMOS transistor, and a source of the sixth NMOS transistor is connected to a drain of the seventh NMOS transistor; a gate of the fifteenth PMOS transistor is connected to the enable signal, and a source of the fifteenth PMOS transistor is connected to the power supply voltage; and an output terminal of the third inverter outputs the zero-voltage sensing signal.
Layer stacks claimed or described, ordered top of device to substrate.
Switch bootstrap charging circuit (high-voltage NMOS variant) for GaN gate drive circuit
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
Patent
Atlas literature
Patent
US 10,673,426Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power devices comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage metal-oxide-semiconductor field effect transistor (MOSFET), a high-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a first PMOS transistor, and the high-voltage MOSFET is a first NMOS transistor configured to withstand a high drain-to-source (VDS) voltage; the low-voltage MOSFET control module generates a first control signal and a gate drive signal of the low-voltage MOSFET according to a first undervoltage signal and a gate drive signal of the lower power transistor, wherein, the first undervoltage signal is an undervoltage protection signal generated during a power on of a power supply voltage; when the first undervoltage signal is at a low level, the first control signal and the gate drive signal of the low-voltage MOSFET are at the low level; when the first undervoltage signal is at a high level, the first control signal and the gate drive signal of the lower power transistor are at a same logic level, and the gate drive signal of the low-voltage MOSFET and the gate drive signal of the lower power transistor are at reverse logic levels; a gate of the low-voltage MOSFET is connected to the gate drive signal of the low-voltage MOSFET, a source of the low-voltage MOSFET is connected to the power supply voltage, and a drain of the low-voltage MOSFET is connected to a source of the high-voltage MOSFET; the high-voltage MOSFET control module comprises a second NMOS transistor, a first inverter, a second inverter, a first capacitor, a second capacitor, and a first diode; an input terminal of the first inverter is connected to the first control signal, and an output terminal of the first inverter is connected to an input terminal of the second i nverter, and the output terminal of the first inverter is connected to a cathode of the first diode and a gate of the second NMOS transistor through the first capacitor; an anode of the first diode and a source of the second NMOS transistor are connected to the power supply voltage; and a gate of the high-voltage MOSFET is connected to a drain of the second NMOS transistor, the gate of the high-voltage MOSFET is connected to the output terminal of the second inverter through the second capacitor, and a drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power device comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage MOSFET, a high-voltage MOSFET, a bootstrap capacitor, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a PMOS transistor, and the high-voltage MOSFET is a high-voltage PMOS transistor; a source of the low-voltage MOSFET is connected to a power supply voltage, a drain of the low-voltage MOSFET is connected to a drain of the high-voltage MOSFET, and a gate of the low-voltage MOSFET is connected to a gate drive signal of the low-voltage MOSFET; a gate of the high-voltage MOSFET is connected to a gate drive signal of the high-voltage MOSFET, a source of the high-voltage MOSFET is connected to an upper electrode plate of the bootstrap capacitor, and the source of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit; a lower electrode plate of the bootstrap capacitor is connected to a switch node of the gate drive circuit of the GaN power devices; the low-voltage MOSFET control module is enabled by an enable signal to generate the gate drive signal of the low-voltage MOSFET under a control of a first low-side control signal; the gate drive signal of the low-voltage MOSFET and the first low-side control signal are at reverse logic levels; the first low-side control signal and a gate drive signal of the lower power transistor are at a first same logic level; the enable signal and the first undervoltage signal are at a second same logic level; and the first undervoltage signal is an undervoltage signal of the power supply voltage; the high-voltage MOSFET control module comprises a zero-voltage sensing module, a high-voltage switching logic control module, and a high-voltage level-shift module; the zero-voltage sensing module is enabled by the enable signal, and the zero-voltage sensing module samples a signal at a switch node of the gate drive circuit of the GaN power devices under a control of a second low-side control signal and generates a zero-voltage sensing signal; if the signal at the switch node of the gate drive circuit of the GaN power devices has a high voltage, the zero-voltage sensing signal is at a first low level; if the signal at the switch node of the gate drive circuit of the GaN power devices is essentially zero, the zero-voltage sensing signal is at a high level; the second low-side control signal and the gate drive signal of the lower power transistor are at a third same logic level, and the second low-side control signal is obtained by delaying the first low-side control signal; the high-voltage switching logic control module is enabled by the enable signal for generating a determination signal according to the zero-voltage sensing signal and the first low-side control signal; the high-voltage level-shift module is configured to shift a power rail of the determination signal from power supply voltage to ground to output terminal signal of the switch bootstrap charging circuit to the signal at the switch node; the high-voltage switching logic control module generates the gate drive signal of the high-voltage MOSFET according to the determination signal processed by the high-voltage level-shift module and the second undervoltage signal; the gate drive signal of the high-voltage MOSFET is at a second low level only when the second undervoltage signal, the first low-side control signal, and the zero-voltage sensing signal are all at the high level; otherwise, the gate drive signal of the high-voltage MOSFET is at the high level; and the second undervoltage signal is an undervoltage signal between the output terminal of the switch bootstrap charging circuit and the switch node.
The switch bootstrap charging circuit suitable for the gate drive circuit of the G aN power device of claim 2, wherein, the zero-voltage sensing module comprises a third inverter, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a twenty-sixth NMOS transistor, a twenty-seventh NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a fifteenth NMOS transistor, a sixteenth NMOS transistor, a seventeenth NMOS transistor, an eighteenth NMOS transistor, a nineteenth NMOS transistor, a twentieth NMOS transistor, a twenty-first NMOS transistor, a twenty-second NMOS transistor, a twenty-third NMOS transistor, a twenty-fourth NMOS transistor, a twenty-fifth NMOS transistor, an eighteenth PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor, an eleventh PMOS transistor, a twelfth PMOS transistor, a thirteenth PMOS transistor, a fourteenth PMOS transistor, a fifteenth PMOS transistor, a sixteenth PMOS transistor, and a seventeenth PMOS transistor, wherein, the twenty-fifth NMOS transistor is a high voltage transistor; one end of the tenth resistor is connected to the switch node of the gate drive circuit of the G aN power devices, and an other end of the tenth resistor is connected to a drain of the twenty-fifth NMOS transistor; a gate of the twentieth NMOS transistor is connected to gates of the twenty-fifth NMOS transistor and the twenty-first NMOS transistor and the gate of the twentieth NMOS transistor is connected to the second low-side control signal, a source of the twentieth NMOS transistor is connected to a source of the twenty-fifth NMOS transistor, and a drain of the twentieth NMOS transistor is connected to a source of the twenty-first NMOS transistor and a drain of the twenty-fourth NMOS transistor; a drain of the twenty-first NMOS transistor is connected to a drain of the twenty-third NMOS transistor and outputs a sampling signal; a gate of the twenty-second NMOS transistor is connected to gates of the twenty-third NMOS transistor and the twenty-fourth NMOS transistor and the gate of the twenty-second NMOS transistor is connected to a level-reversed signal of the second low-side control signal, a drain of the twenty-second NMOS transistor is connected to a first reference voltage, and a source of the twenty-second NMOS transistor is connected to a source of the twenty-third NMOS transistor; a source of the twenty-fourth NMOS transistor is grounded; a gate of the sixteenth PMOS transistor is connected to the sampling signal, a source of the sixteenth PMOS transistor is connected to a source of the seventeenth PMOS transistor, the source of the sixteenth PMOS transistor is connected to a drain of the fifth PMOS transistor through the third resistor, and a drain of the sixteenth PMOS transistor is connected to a source of the eighth NMOS transistor and a drain of the ninth NMOS transistor; a gate of the seventeenth PMOS transistor is connected to a second reference voltage, and a drain of the seventeenth PMOS transistor is connected to a source of the tenth NMOS transistor and a drain of the eleventh NMOS transistor; a source of the fifth PMOS transistor is connected to a drain of the sixth PMOS transistor; a gate of the ninth NMOS transistor is connected to a gate of the eleventh NMOS transistor; a gate of the eighth NMOS transistor is connected to a gate of the tenth NMOS transistor, a drain of the eighth NMOS transistor is connected to a gate of the twelfth NMOS transistor, and the drain of the eighth NMOS transistor is connected to a gate and a drain of the seventh PMOS transistor through the fourth resistor; one end of the fifth resistor is connected to a gate of the seventh PMOS transistor, and an other end of the fifth resistor is connected to a drain of the tenth NMOS transistor and a gate of the thirteenth NMOS transistor; a gate of the twenty-sixth NMOS transistor is connected to a level-reversed signal of the first undervoltage signal, a drain of the twenty-sixth NMOS transistor is connected to a gate of the third NMOS transistor, a gate and a drain of the twenty-seventh NMOS transistor, and a bias signal, a source of the twenty-sixth NMOS transistor is connected to sources of the twenty-seventh NMOS transistor, the third NMOS transistor, the fifth NMOS transistor, the seventh NMOS transistor, the ninth NMOS transistor, the eleventh NMOS transistor, the fifteenth NMOS transistor, the sixteenth NMOS transistor, and the seventeenth NMOS transistor, and is grounded; a gate of the second PMOS transistor is connected to gates of the third PMOS transistor, the fifth PMOS transistor, and the tenth PMOS transistor, and a drain of the third NMOS transistor, and the gate of the second PMOS transistor is connected to a drain of the second PMOS transistor and gates of the eighteenth PMOS transistor, the fourth PMOS transistor, the sixth PMOS transistor, and the ninth PMOS transistor through the first resistor, and a source of the second PMOS transistor is connected to a drain of the eighteenth PMOS transistor; a drain of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a source of the fourth PMOS transistor is connected to sources of the eighteenth PMOS transistor, the sixth PMOS transistor, the seventh PMOS transistor, the eighth PMOS transistor, the ninth PMOS transistor, the eleventh PMOS transistor, and the fourteenth PMOS transistor, and is connected to the power supply voltage; a gate of the fourth NMOS transistor is connected to gates of the sixth NMOS transistor and the fourteenth NMOS transistor and a drain of the third PMOS transistor, and the gate of the fourth NMOS transistor is connected to a drain of the fourth NMOS transistor and gates of the fifth NMOS transistor, the seventh NMOS transistor, and the fifteenth NMOS transistor through the second resistor, and a source of the fourth NMOS transistor is connected to a drain of the fifth NMOS transistor; a source of the fourteenth NMOS transistor is connected to a drain of the fifteenth NMOS transistor, and a drain of the fourteenth NMOS transistor is connected to sources of the twelfth NMOS transistor and the thirteenth NMOS transistor; one end of the sixth resistor is connected to a gate and a drain of the eighth PMOS transistor and one end of the seventh resistor, and an other end of the sixth resistor is connected to a drain of the twelfth NMOS transistor and gates of the thirteenth PMOS transistor and the eighteenth NMOS transistor; a gate of the twelfth PMOS transistor is connected to an other end of the seventh resistor, a drain of the thirteenth NMOS transistor, and a gate of the nineteenth NMOS transistor; a source of the twelfth PMOS transistor is connected to a source of the thirteenth PMOS transistor and a drain of the tenth PMOS transistor; a drain of the twelfth PMOS transistor is connected to a gate and a drain of the sixteenth NMOS transistor, and the drain of the twelfth PMOS transistor is connected to a drain of the thirteenth PMOS transistor and a gate of the seventeenth NMOS transistor through the eighth resistor; a source of the tenth PMOS transistor is connected to a drain of the ninth PMOS transistor; a gate of the fourteenth PMOS transistor is connected to a drain of the eighteenth NMOS transistor, and the gate of the fourteenth PMOS transistor is connected to a gate and a drain of the eleventh PMOS transistor and a drain of the nineteenth NMOS transistor through the ninth resistor; a drain of the fourteenth PMOS transistor is connected to drains of the seventeenth NMOS transistor and the fifteenth PMOS transistor and an input terminal of the third inverter; a drain of the sixth NMOS transistor is connected to sources of the eighteenth NMOS transistor and the nineteenth NMOS transistor, and a source of the sixth NMOS transistor is connected to a drain of the seventh NMOS transistor; a gate of the fifteenth PMOS transistor is connected to the enable signal, and a source of the fifteenth PMOS transistor is connected to the power supply voltage; and an output terminal of the third inverter outputs the zero-voltage sensing signal.
Layer stacks claimed or described, ordered top of device to substrate.
Switch bootstrap charging circuit (high-voltage NMOS variant) for GaN gate drive circuit
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
Patent
Atlas literature
Patent
US 10,673,426Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power devices comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage metal-oxide-semiconductor field effect transistor (MOSFET), a high-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a first PMOS transistor, and the high-voltage MOSFET is a first NMOS transistor configured to withstand a high drain-to-source (VDS) voltage; the low-voltage MOSFET control module generates a first control signal and a gate drive signal of the low-voltage MOSFET according to a first undervoltage signal and a gate drive signal of the lower power transistor, wherein, the first undervoltage signal is an undervoltage protection signal generated during a power on of a power supply voltage; when the first undervoltage signal is at a low level, the first control signal and the gate drive signal of the low-voltage MOSFET are at the low level; when the first undervoltage signal is at a high level, the first control signal and the gate drive signal of the lower power transistor are at a same logic level, and the gate drive signal of the low-voltage MOSFET and the gate drive signal of the lower power transistor are at reverse logic levels; a gate of the low-voltage MOSFET is connected to the gate drive signal of the low-voltage MOSFET, a source of the low-voltage MOSFET is connected to the power supply voltage, and a drain of the low-voltage MOSFET is connected to a source of the high-voltage MOSFET; the high-voltage MOSFET control module comprises a second NMOS transistor, a first inverter, a second inverter, a first capacitor, a second capacitor, and a first diode; an input terminal of the first inverter is connected to the first control signal, and an output terminal of the first inverter is connected to an input terminal of the second i nverter, and the output terminal of the first inverter is connected to a cathode of the first diode and a gate of the second NMOS transistor through the first capacitor; an anode of the first diode and a source of the second NMOS transistor are connected to the power supply voltage; and a gate of the high-voltage MOSFET is connected to a drain of the second NMOS transistor, the gate of the high-voltage MOSFET is connected to the output terminal of the second inverter through the second capacitor, and a drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit.
A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device, wherein, the GaN power device comprises an upper power transistor and a lower power transistor, the switch bootstrap charging circuit comprising: a low-voltage MOSFET, a high-voltage MOSFET, a bootstrap capacitor, a high-voltage MOSFET control module, and a low-voltage MOSFET control module, wherein the low-voltage MOSFET is a PMOS transistor, and the high-voltage MOSFET is a high-voltage PMOS transistor; a source of the low-voltage MOSFET is connected to a power supply voltage, a drain of the low-voltage MOSFET is connected to a drain of the high-voltage MOSFET, and a gate of the low-voltage MOSFET is connected to a gate drive signal of the low-voltage MOSFET; a gate of the high-voltage MOSFET is connected to a gate drive signal of the high-voltage MOSFET, a source of the high-voltage MOSFET is connected to an upper electrode plate of the bootstrap capacitor, and the source of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit; a lower electrode plate of the bootstrap capacitor is connected to a switch node of the gate drive circuit of the GaN power devices; the low-voltage MOSFET control module is enabled by an enable signal to generate the gate drive signal of the low-voltage MOSFET under a control of a first low-side control signal; the gate drive signal of the low-voltage MOSFET and the first low-side control signal are at reverse logic levels; the first low-side control signal and a gate drive signal of the lower power transistor are at a first same logic level; the enable signal and the first undervoltage signal are at a second same logic level; and the first undervoltage signal is an undervoltage signal of the power supply voltage; the high-voltage MOSFET control module comprises a zero-voltage sensing module, a high-voltage switching logic control module, and a high-voltage level-shift module; the zero-voltage sensing module is enabled by the enable signal, and the zero-voltage sensing module samples a signal at a switch node of the gate drive circuit of the GaN power devices under a control of a second low-side control signal and generates a zero-voltage sensing signal; if the signal at the switch node of the gate drive circuit of the GaN power devices has a high voltage, the zero-voltage sensing signal is at a first low level; if the signal at the switch node of the gate drive circuit of the GaN power devices is essentially zero, the zero-voltage sensing signal is at a high level; the second low-side control signal and the gate drive signal of the lower power transistor are at a third same logic level, and the second low-side control signal is obtained by delaying the first low-side control signal; the high-voltage switching logic control module is enabled by the enable signal for generating a determination signal according to the zero-voltage sensing signal and the first low-side control signal; the high-voltage level-shift module is configured to shift a power rail of the determination signal from power supply voltage to ground to output terminal signal of the switch bootstrap charging circuit to the signal at the switch node; the high-voltage switching logic control module generates the gate drive signal of the high-voltage MOSFET according to the determination signal processed by the high-voltage level-shift module and the second undervoltage signal; the gate drive signal of the high-voltage MOSFET is at a second low level only when the second undervoltage signal, the first low-side control signal, and the zero-voltage sensing signal are all at the high level; otherwise, the gate drive signal of the high-voltage MOSFET is at the high level; and the second undervoltage signal is an undervoltage signal between the output terminal of the switch bootstrap charging circuit and the switch node.
The switch bootstrap charging circuit suitable for the gate drive circuit of the G aN power device of claim 2, wherein, the zero-voltage sensing module comprises a third inverter, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a twenty-sixth NMOS transistor, a twenty-seventh NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, a tenth NMOS transistor, an eleventh NMOS transistor, a twelfth NMOS transistor, a thirteenth NMOS transistor, a fourteenth NMOS transistor, a fifteenth NMOS transistor, a sixteenth NMOS transistor, a seventeenth NMOS transistor, an eighteenth NMOS transistor, a nineteenth NMOS transistor, a twentieth NMOS transistor, a twenty-first NMOS transistor, a twenty-second NMOS transistor, a twenty-third NMOS transistor, a twenty-fourth NMOS transistor, a twenty-fifth NMOS transistor, an eighteenth PMOS transistor, a second PMOS transistor, a third PMOS transistor, a fourth PMOS transistor, a fifth PMOS transistor, a sixth PMOS transistor, a seventh PMOS transistor, an eighth PMOS transistor, a ninth PMOS transistor, a tenth PMOS transistor, an eleventh PMOS transistor, a twelfth PMOS transistor, a thirteenth PMOS transistor, a fourteenth PMOS transistor, a fifteenth PMOS transistor, a sixteenth PMOS transistor, and a seventeenth PMOS transistor, wherein, the twenty-fifth NMOS transistor is a high voltage transistor; one end of the tenth resistor is connected to the switch node of the gate drive circuit of the G aN power devices, and an other end of the tenth resistor is connected to a drain of the twenty-fifth NMOS transistor; a gate of the twentieth NMOS transistor is connected to gates of the twenty-fifth NMOS transistor and the twenty-first NMOS transistor and the gate of the twentieth NMOS transistor is connected to the second low-side control signal, a source of the twentieth NMOS transistor is connected to a source of the twenty-fifth NMOS transistor, and a drain of the twentieth NMOS transistor is connected to a source of the twenty-first NMOS transistor and a drain of the twenty-fourth NMOS transistor; a drain of the twenty-first NMOS transistor is connected to a drain of the twenty-third NMOS transistor and outputs a sampling signal; a gate of the twenty-second NMOS transistor is connected to gates of the twenty-third NMOS transistor and the twenty-fourth NMOS transistor and the gate of the twenty-second NMOS transistor is connected to a level-reversed signal of the second low-side control signal, a drain of the twenty-second NMOS transistor is connected to a first reference voltage, and a source of the twenty-second NMOS transistor is connected to a source of the twenty-third NMOS transistor; a source of the twenty-fourth NMOS transistor is grounded; a gate of the sixteenth PMOS transistor is connected to the sampling signal, a source of the sixteenth PMOS transistor is connected to a source of the seventeenth PMOS transistor, the source of the sixteenth PMOS transistor is connected to a drain of the fifth PMOS transistor through the third resistor, and a drain of the sixteenth PMOS transistor is connected to a source of the eighth NMOS transistor and a drain of the ninth NMOS transistor; a gate of the seventeenth PMOS transistor is connected to a second reference voltage, and a drain of the seventeenth PMOS transistor is connected to a source of the tenth NMOS transistor and a drain of the eleventh NMOS transistor; a source of the fifth PMOS transistor is connected to a drain of the sixth PMOS transistor; a gate of the ninth NMOS transistor is connected to a gate of the eleventh NMOS transistor; a gate of the eighth NMOS transistor is connected to a gate of the tenth NMOS transistor, a drain of the eighth NMOS transistor is connected to a gate of the twelfth NMOS transistor, and the drain of the eighth NMOS transistor is connected to a gate and a drain of the seventh PMOS transistor through the fourth resistor; one end of the fifth resistor is connected to a gate of the seventh PMOS transistor, and an other end of the fifth resistor is connected to a drain of the tenth NMOS transistor and a gate of the thirteenth NMOS transistor; a gate of the twenty-sixth NMOS transistor is connected to a level-reversed signal of the first undervoltage signal, a drain of the twenty-sixth NMOS transistor is connected to a gate of the third NMOS transistor, a gate and a drain of the twenty-seventh NMOS transistor, and a bias signal, a source of the twenty-sixth NMOS transistor is connected to sources of the twenty-seventh NMOS transistor, the third NMOS transistor, the fifth NMOS transistor, the seventh NMOS transistor, the ninth NMOS transistor, the eleventh NMOS transistor, the fifteenth NMOS transistor, the sixteenth NMOS transistor, and the seventeenth NMOS transistor, and is grounded; a gate of the second PMOS transistor is connected to gates of the third PMOS transistor, the fifth PMOS transistor, and the tenth PMOS transistor, and a drain of the third NMOS transistor, and the gate of the second PMOS transistor is connected to a drain of the second PMOS transistor and gates of the eighteenth PMOS transistor, the fourth PMOS transistor, the sixth PMOS transistor, and the ninth PMOS transistor through the first resistor, and a source of the second PMOS transistor is connected to a drain of the eighteenth PMOS transistor; a drain of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a source of the fourth PMOS transistor is connected to sources of the eighteenth PMOS transistor, the sixth PMOS transistor, the seventh PMOS transistor, the eighth PMOS transistor, the ninth PMOS transistor, the eleventh PMOS transistor, and the fourteenth PMOS transistor, and is connected to the power supply voltage; a gate of the fourth NMOS transistor is connected to gates of the sixth NMOS transistor and the fourteenth NMOS transistor and a drain of the third PMOS transistor, and the gate of the fourth NMOS transistor is connected to a drain of the fourth NMOS transistor and gates of the fifth NMOS transistor, the seventh NMOS transistor, and the fifteenth NMOS transistor through the second resistor, and a source of the fourth NMOS transistor is connected to a drain of the fifth NMOS transistor; a source of the fourteenth NMOS transistor is connected to a drain of the fifteenth NMOS transistor, and a drain of the fourteenth NMOS transistor is connected to sources of the twelfth NMOS transistor and the thirteenth NMOS transistor; one end of the sixth resistor is connected to a gate and a drain of the eighth PMOS transistor and one end of the seventh resistor, and an other end of the sixth resistor is connected to a drain of the twelfth NMOS transistor and gates of the thirteenth PMOS transistor and the eighteenth NMOS transistor; a gate of the twelfth PMOS transistor is connected to an other end of the seventh resistor, a drain of the thirteenth NMOS transistor, and a gate of the nineteenth NMOS transistor; a source of the twelfth PMOS transistor is connected to a source of the thirteenth PMOS transistor and a drain of the tenth PMOS transistor; a drain of the twelfth PMOS transistor is connected to a gate and a drain of the sixteenth NMOS transistor, and the drain of the twelfth PMOS transistor is connected to a drain of the thirteenth PMOS transistor and a gate of the seventeenth NMOS transistor through the eighth resistor; a source of the tenth PMOS transistor is connected to a drain of the ninth PMOS transistor; a gate of the fourteenth PMOS transistor is connected to a drain of the eighteenth NMOS transistor, and the gate of the fourteenth PMOS transistor is connected to a gate and a drain of the eleventh PMOS transistor and a drain of the nineteenth NMOS transistor through the ninth resistor; a drain of the fourteenth PMOS transistor is connected to drains of the seventeenth NMOS transistor and the fifteenth PMOS transistor and an input terminal of the third inverter; a drain of the sixth NMOS transistor is connected to sources of the eighteenth NMOS transistor and the nineteenth NMOS transistor, and a source of the sixth NMOS transistor is connected to a drain of the seventh NMOS transistor; a gate of the fifteenth PMOS transistor is connected to the enable signal, and a source of the fifteenth PMOS transistor is connected to the power supply voltage; and an output terminal of the third inverter outputs the zero-voltage sensing signal.
Layer stacks claimed or described, ordered top of device to substrate.
Switch bootstrap charging circuit (high-voltage NMOS variant) for GaN gate drive circuit
Materials described outside the worked examples.
GaN (gallium nitride)
GaN
Switch bootstrap charging circuit (high-voltage PMOS variant) for GaN gate drive circuit
Switch bootstrap charging circuit (high-voltage PMOS variant) for GaN gate drive circuit
Switch bootstrap charging circuit (high-voltage PMOS variant) for GaN gate drive circuit
Switch bootstrap charging circuit (high-voltage PMOS variant) for GaN gate drive circuit