Patent
US 9,324,607GAN POWER DEVICE WITH SOLDERABLE BACK METAL
Patrick James Laslo Hyland
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,324,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
FIGS. 2 -6 are simplified cross-sectional diagrams illustrating a process for creating a solderable back metal on a vertical semiconductor device and attaching …
FIG. 3, a diffusion barrier 310 is formed, coupled to the adhesion layer 5 210. The diffusion barrier 310 can help protect the adhesion layer 210 from …
FIG. 4, a protection layer 410 is formed, coupled to the diffusion ba rrier 310. In some embodiments, the protection layer 410 can protect the diffusion barrier …
FIG. 5 is a simplified cross-sectional illustration of a process of using a layer of solder 25 510 to attach the vertical semiconductor device to a lead frame …
FIG. 6 shows the formation of a metal contact 150 on a top surface 610 of the vertical semiconductor device. The metal contact 150 can be one or more layers of …
FIG. 7 is a flowchart illustrating a method 800 of fabricating a vertical GaN power 5 device, according to an embodiment of the present invention. [0011] In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a vertical gallium nitride (GaN) power device, the method comprising: providing a GaN substrate with a top surface and a bottom surface; forming a device layer contacting the top surface of the GaN substrate; forming a metal contact on the device layer; forming a backside metal contacting the bottom surface of the GaN substrate by: forming an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; forming a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and forming a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials comprise at least one o f are selected from gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The method of claim 1, wherein the GaN substrate comprises an n-type GaN substrate. Page 2 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The method of claim 1, wherein the first and second materials respectively comprise Titanium and Aluminum.
The method of claim 1, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The method of claim 1, wherein the diffusion barrier comprises nickel.
The method of claim 1, further comprising forming a solder layer coupled to the protection layer.
The method of claim 1, further comprising polishing the bottom surface of the GaN substrate prior to the forming of the backside metal.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm.
A vertical gallium nitride (GaN) power device, comprising: a GaN substrate with a top surface and a bottom surface; a device layer contacting the top surface of the GaN substrate; a metal contact on the device layer; a backside metal contacting the bottom surface of the GaN, the backside metal comprising: an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; Page 3 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials are selected from comprise at least one of gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The power device of claim 11, wherein the GaN substrate comprises an n-type GaN substrate.
The power device of claim 11, wherein the first and second materials respectively comprise Titanium and Aluminum.
The power device of claim 11, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The power device of claim 11, wherein the diffusion barrier comprises nickel.
The power device of claim 11, further comprising a solder layer coupled to the protection layer.
The power device of claim 11, wherein the bottom surface of the GaN is polished. Page 4 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm. Page 5 of 6
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN power device
Materials described outside the worked examples.
GaN substrate
GaN
Titanium (first material in adhesion layer)
Ti
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness at bottom surface of GaN substrate (lower bound) | ≥ 10 | GaN |
RMS surface roughness at bottom surface of GaN substrate (upper bound) | ≤ 200 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
FIGS. 2 -6 are simplified cross-sectional diagrams illustrating a process for creating a solderable back metal on a vertical semiconductor device and attaching …
FIG. 3, a diffusion barrier 310 is formed, coupled to the adhesion layer 5 210. The diffusion barrier 310 can help protect the adhesion layer 210 from …
FIG. 4, a protection layer 410 is formed, coupled to the diffusion ba rrier 310. In some embodiments, the protection layer 410 can protect the diffusion barrier …
FIG. 5 is a simplified cross-sectional illustration of a process of using a layer of solder 25 510 to attach the vertical semiconductor device to a lead frame …
FIG. 6 shows the formation of a metal contact 150 on a top surface 610 of the vertical semiconductor device. The metal contact 150 can be one or more layers of …
FIG. 7 is a flowchart illustrating a method 800 of fabricating a vertical GaN power 5 device, according to an embodiment of the present invention. [0011] In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a vertical gallium nitride (GaN) power device, the method comprising: providing a GaN substrate with a top surface and a bottom surface; forming a device layer contacting the top surface of the GaN substrate; forming a metal contact on the device layer; forming a backside metal contacting the bottom surface of the GaN substrate by: forming an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; forming a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and forming a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials comprise at least one o f are selected from gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The method of claim 1, wherein the GaN substrate comprises an n-type GaN substrate. Page 2 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The method of claim 1, wherein the first and second materials respectively comprise Titanium and Aluminum.
The method of claim 1, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The method of claim 1, wherein the diffusion barrier comprises nickel.
The method of claim 1, further comprising forming a solder layer coupled to the protection layer.
The method of claim 1, further comprising polishing the bottom surface of the GaN substrate prior to the forming of the backside metal.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm.
A vertical gallium nitride (GaN) power device, comprising: a GaN substrate with a top surface and a bottom surface; a device layer contacting the top surface of the GaN substrate; a metal contact on the device layer; a backside metal contacting the bottom surface of the GaN, the backside metal comprising: an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; Page 3 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials are selected from comprise at least one of gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The power device of claim 11, wherein the GaN substrate comprises an n-type GaN substrate.
The power device of claim 11, wherein the first and second materials respectively comprise Titanium and Aluminum.
The power device of claim 11, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The power device of claim 11, wherein the diffusion barrier comprises nickel.
The power device of claim 11, further comprising a solder layer coupled to the protection layer.
The power device of claim 11, wherein the bottom surface of the GaN is polished. Page 4 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm. Page 5 of 6
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN power device
Materials described outside the worked examples.
GaN substrate
GaN
Titanium (first material in adhesion layer)
Ti
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness at bottom surface of GaN substrate (lower bound) | ≥ 10 | GaN |
RMS surface roughness at bottom surface of GaN substrate (upper bound) | ≤ 200 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
FIGS. 2 -6 are simplified cross-sectional diagrams illustrating a process for creating a solderable back metal on a vertical semiconductor device and attaching …
FIG. 3, a diffusion barrier 310 is formed, coupled to the adhesion layer 5 210. The diffusion barrier 310 can help protect the adhesion layer 210 from …
FIG. 4, a protection layer 410 is formed, coupled to the diffusion ba rrier 310. In some embodiments, the protection layer 410 can protect the diffusion barrier …
FIG. 5 is a simplified cross-sectional illustration of a process of using a layer of solder 25 510 to attach the vertical semiconductor device to a lead frame …
FIG. 6 shows the formation of a metal contact 150 on a top surface 610 of the vertical semiconductor device. The metal contact 150 can be one or more layers of …
FIG. 7 is a flowchart illustrating a method 800 of fabricating a vertical GaN power 5 device, according to an embodiment of the present invention. [0011] In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a vertical gallium nitride (GaN) power device, the method comprising: providing a GaN substrate with a top surface and a bottom surface; forming a device layer contacting the top surface of the GaN substrate; forming a metal contact on the device layer; forming a backside metal contacting the bottom surface of the GaN substrate by: forming an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; forming a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and forming a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials comprise at least one o f are selected from gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The method of claim 1, wherein the GaN substrate comprises an n-type GaN substrate. Page 2 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The method of claim 1, wherein the first and second materials respectively comprise Titanium and Aluminum.
The method of claim 1, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The method of claim 1, wherein the diffusion barrier comprises nickel.
The method of claim 1, further comprising forming a solder layer coupled to the protection layer.
The method of claim 1, further comprising polishing the bottom surface of the GaN substrate prior to the forming of the backside metal.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm.
A vertical gallium nitride (GaN) power device, comprising: a GaN substrate with a top surface and a bottom surface; a device layer contacting the top surface of the GaN substrate; a metal contact on the device layer; a backside metal contacting the bottom surface of the GaN, the backside metal comprising: an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; Page 3 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials are selected from comprise at least one of gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The power device of claim 11, wherein the GaN substrate comprises an n-type GaN substrate.
The power device of claim 11, wherein the first and second materials respectively comprise Titanium and Aluminum.
The power device of claim 11, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The power device of claim 11, wherein the diffusion barrier comprises nickel.
The power device of claim 11, further comprising a solder layer coupled to the protection layer.
The power device of claim 11, wherein the bottom surface of the GaN is polished. Page 4 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm. Page 5 of 6
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN power device
Materials described outside the worked examples.
GaN substrate
GaN
Titanium (first material in adhesion layer)
Ti
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness at bottom surface of GaN substrate (lower bound) | ≥ 10 | GaN |
RMS surface roughness at bottom surface of GaN substrate (upper bound) | ≤ 200 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,324,607Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
FIGS. 2 -6 are simplified cross-sectional diagrams illustrating a process for creating a solderable back metal on a vertical semiconductor device and attaching …
FIG. 3, a diffusion barrier 310 is formed, coupled to the adhesion layer 5 210. The diffusion barrier 310 can help protect the adhesion layer 210 from …
FIG. 4, a protection layer 410 is formed, coupled to the diffusion ba rrier 310. In some embodiments, the protection layer 410 can protect the diffusion barrier …
FIG. 5 is a simplified cross-sectional illustration of a process of using a layer of solder 25 510 to attach the vertical semiconductor device to a lead frame …
FIG. 6 shows the formation of a metal contact 150 on a top surface 610 of the vertical semiconductor device. The metal contact 150 can be one or more layers of …
FIG. 7 is a flowchart illustrating a method 800 of fabricating a vertical GaN power 5 device, according to an embodiment of the present invention. [0011] In the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a vertical gallium nitride (GaN) power device, the method comprising: providing a GaN substrate with a top surface and a bottom surface; forming a device layer contacting the top surface of the GaN substrate; forming a metal contact on the device layer; forming a backside metal contacting the bottom surface of the GaN substrate by: forming an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; forming a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and forming a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials comprise at least one o f are selected from gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The method of claim 1, wherein the GaN substrate comprises an n-type GaN substrate. Page 2 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The method of claim 1, wherein the first and second materials respectively comprise Titanium and Aluminum.
The method of claim 1, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The method of claim 1, wherein the diffusion barrier comprises nickel.
The method of claim 1, further comprising forming a solder layer coupled to the protection layer.
The method of claim 1, further comprising polishing the bottom surface of the GaN substrate prior to the forming of the backside metal.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The method of claim 1, wherein a root-mean-square (R MS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm.
A vertical gallium nitride (GaN) power device, comprising: a GaN substrate with a top surface and a bottom surface; a device layer contacting the top surface of the GaN substrate; a metal contact on the device layer; a backside metal contacting the bottom surface of the GaN, the backside metal comprising: an aluminum adhesion layer coupled to the bottom surface of the GaN substrate, wherein the aluminum adhesion layer comprises first and second materials, wherein the second material is different from the first material; Page 3 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of a diffusion barrier coupled to the aluminum adhesion layer, wherein the diffusion barrier comprises a third material, wherein the third material is different from the first and second materials; and a protection layer coupled to the diffusion barrier, wherein the protection layer comprises fourth and fifth materials, wherein the fourth material is different from the first, second, and third materials, wherein the fifth material is different from the first, second, third, and fourth materials, and wherein the fourth and fifth materials are selected from comprise at least one of gold and silver, wherein the first, second, third, fourth, and fifth materials are stacked in sequential order, and wherein the vertical GaN power device is configured to conduct electricity between the metal contact and the backside metal.
The power device of claim 11, wherein the GaN substrate comprises an n-type GaN substrate.
The power device of claim 11, wherein the first and second materials respectively comprise Titanium and Aluminum.
The power device of claim 11, wherein the aluminum adhesion layer comprises an unannealed aluminum adhesion layer.
The power device of claim 11, wherein the diffusion barrier comprises nickel.
The power device of claim 11, further comprising a solder layer coupled to the protection layer.
The power device of claim 11, wherein the bottom surface of the GaN is polished. Page 4 of 6 App l. No. 14/815,751 PATENT Amdt. dated Response to Notice of Allowance of
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is greater than 10 nm.
The power device of claim 11, wherein a root-mean-square (RMS) surface roughness at the bottom surface of the GaN substrate is less than 200 nm. Page 5 of 6
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN power device
Materials described outside the worked examples.
GaN substrate
GaN
Titanium (first material in adhesion layer)
Ti
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 B, other embodiments of vertical semiconductor devices, such as transistors, can include multiple metal contacts 140, 150 in order to achieve additional …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS surface roughness at bottom surface of GaN substrate (lower bound) | ≥ 10 | GaN |
RMS surface roughness at bottom surface of GaN substrate (upper bound) | ≤ 200 |
Related documents with shared materials, methods, properties, or citations.
Aluminum (second material in adhesion layer)
Al
Nickel (diffusion barrier)
Ni
Gold or Silver (fourth material in protection layer)
Gold or Silver (fifth material in protection layer)
Solder (at least 80 wt% lead)
Thickness | 10–200 nm | — |
Duration | 1–30 minutes | — |
Thickness | 100–300 nm | — |
Thickness | 100–900 nm | — |
Thickness | 10–100 µm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≥ 10 nm | — |
Aluminum (second material in adhesion layer)
Al
Nickel (diffusion barrier)
Ni
Gold or Silver (fourth material in protection layer)
Gold or Silver (fifth material in protection layer)
Solder (at least 80 wt% lead)
Thickness | 10–200 nm | — |
Duration | 1–30 minutes | — |
Thickness | 100–300 nm | — |
Thickness | 100–900 nm | — |
Thickness | 10–100 µm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≥ 10 nm | — |
Aluminum (second material in adhesion layer)
Al
Nickel (diffusion barrier)
Ni
Gold or Silver (fourth material in protection layer)
Gold or Silver (fifth material in protection layer)
Solder (at least 80 wt% lead)
Thickness | 10–200 nm | — |
Duration | 1–30 minutes | — |
Thickness | 100–300 nm | — |
Thickness | 100–900 nm | — |
Thickness | 10–100 µm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≥ 10 nm | — |
Aluminum (second material in adhesion layer)
Al
Nickel (diffusion barrier)
Ni
Gold or Silver (fourth material in protection layer)
Gold or Silver (fifth material in protection layer)
Solder (at least 80 wt% lead)
Thickness | 10–200 nm | — |
Duration | 1–30 minutes | — |
Thickness | 100–300 nm | — |
Thickness | 100–900 nm | — |
Thickness | 10–100 µm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≥ 10 nm | — |