Patent
Atlas literature
Patent
US 12,385,157 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of the growth of 2D MoS2.
FIG. 2 is a flow chart of the preparation of the 2D MoS₂ material of the present disclosure, where the substrate 1 is sodium-calcium glass and the substrate 2 …
FIG. 3 is a single-crystal domain size diagram of the 2D MoS₂ material prepared in Embodiment 1.
FIG. 4 is a scanning tunneling microscope diagram of the 2D MoS₂ prepared in Embodiment 1.
FIG. 5 is a size diagram of the double-layer 2D MoS₂ material prepared in Embodiment 2.
FIG. 6 is a size diagram of the wafer-level 2D MoS₂ material prepared in Embodiment 3.
FIG. 7 is a single-crystal domain size diagram of a 2D MoS₂ material prepared from molybdenum sulfide, sodium molybdate or molybdenum foil, where a is …
FIG. 8 is a single-crystal domain size diagram of 2D MoS₂ prepared in Comparative Embodiment 1.
FIG. 9 is a single-crystal domain size diagram of a pseudo-single-crystal TMDCs wafer prepared in Compara- tive Embodiment 2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of 2D MoS₂ materials, compris-ing following steps: using molybdenum source and sulfur as raw materials, using inert gas as carrier gas, transporting the raw materials to a molten sodium-calcium glass surface to deposit solid molybdenum sulfide through an interme-diate evaporation process, and obtaining the 2D MoS₂ materials by etching, spreading, sulfurization and precipitation; the step of transporting the raw materials to the molten sodium-calcium glass surface to deposit the solid molybdenum sulfide through the intermediate evapo-ration process comprises: placing the sulfur in a first temperature zone and placing the molybdenum source and the sodium-calcium glass in a second temperature zone; and heating the first temperature zone to 120-180° C., heating the second temperature zone to 500-1400° C., introducing the inert gas in a heating process, transporting the sulfur to the second temperature zone by the inert gas, and depositing on the sodium-calcium glass surface to obtain a solid molybdenum sulfide layer; 9 steps of the etching and the spreading are: after obtaining the solid molybdenum sulfide layer, adjusting a tem-perature of the second temperature zone to 900-1400° C., introducing oxygen, and etching the solid molyb-denum sulfide layer to obtain Na₂Mo₂O7, and steps of the sulfurization and precipitation are: after obtaining the Na₂Mo₂O7, stopping oxygen supply and carrying out a sulfurization and precipitation reaction to obtain the 2D MoS₂ materials.
The preparation method according to claim 1, wherein in a process of depositing to obtain the solid molybdenum sulfide layer, a heating rate of the first temperature zone is 5-50° C./min; a heating rate of the second temperature zone is 5-50° C./min; and the inert gas is argon, and a flow rate is 200-500 sccm.
The preparation method according to claim 1, wherein in a process of the etching and the spreading, a flow rate of the oxygen is 1-10 sccm; and a temperature adjustment rate of the second temperature zone is 0-50° C./min.
The preparation method according to claim 1, wherein the sulfur is sublimated sulfur; the molybdenum source is one of MoO3, sodium molybdate, molybdenum sulfide and molybdenum foil; and a dosage of the molybdenum source is 1 mg to 20 mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
2D MoS₂
MoS₂
sulfur
S
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystal domain side length | 1.5 cm | MoS₂ |
wafer-level 2D MoS2 size |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,385,157 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of the growth of 2D MoS2.
FIG. 2 is a flow chart of the preparation of the 2D MoS₂ material of the present disclosure, where the substrate 1 is sodium-calcium glass and the substrate 2 …
FIG. 3 is a single-crystal domain size diagram of the 2D MoS₂ material prepared in Embodiment 1.
FIG. 4 is a scanning tunneling microscope diagram of the 2D MoS₂ prepared in Embodiment 1.
FIG. 5 is a size diagram of the double-layer 2D MoS₂ material prepared in Embodiment 2.
FIG. 6 is a size diagram of the wafer-level 2D MoS₂ material prepared in Embodiment 3.
FIG. 7 is a single-crystal domain size diagram of a 2D MoS₂ material prepared from molybdenum sulfide, sodium molybdate or molybdenum foil, where a is …
FIG. 8 is a single-crystal domain size diagram of 2D MoS₂ prepared in Comparative Embodiment 1.
FIG. 9 is a single-crystal domain size diagram of a pseudo-single-crystal TMDCs wafer prepared in Compara- tive Embodiment 2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of 2D MoS₂ materials, compris-ing following steps: using molybdenum source and sulfur as raw materials, using inert gas as carrier gas, transporting the raw materials to a molten sodium-calcium glass surface to deposit solid molybdenum sulfide through an interme-diate evaporation process, and obtaining the 2D MoS₂ materials by etching, spreading, sulfurization and precipitation; the step of transporting the raw materials to the molten sodium-calcium glass surface to deposit the solid molybdenum sulfide through the intermediate evapo-ration process comprises: placing the sulfur in a first temperature zone and placing the molybdenum source and the sodium-calcium glass in a second temperature zone; and heating the first temperature zone to 120-180° C., heating the second temperature zone to 500-1400° C., introducing the inert gas in a heating process, transporting the sulfur to the second temperature zone by the inert gas, and depositing on the sodium-calcium glass surface to obtain a solid molybdenum sulfide layer; 9 steps of the etching and the spreading are: after obtaining the solid molybdenum sulfide layer, adjusting a tem-perature of the second temperature zone to 900-1400° C., introducing oxygen, and etching the solid molyb-denum sulfide layer to obtain Na₂Mo₂O7, and steps of the sulfurization and precipitation are: after obtaining the Na₂Mo₂O7, stopping oxygen supply and carrying out a sulfurization and precipitation reaction to obtain the 2D MoS₂ materials.
The preparation method according to claim 1, wherein in a process of depositing to obtain the solid molybdenum sulfide layer, a heating rate of the first temperature zone is 5-50° C./min; a heating rate of the second temperature zone is 5-50° C./min; and the inert gas is argon, and a flow rate is 200-500 sccm.
The preparation method according to claim 1, wherein in a process of the etching and the spreading, a flow rate of the oxygen is 1-10 sccm; and a temperature adjustment rate of the second temperature zone is 0-50° C./min.
The preparation method according to claim 1, wherein the sulfur is sublimated sulfur; the molybdenum source is one of MoO3, sodium molybdate, molybdenum sulfide and molybdenum foil; and a dosage of the molybdenum source is 1 mg to 20 mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
2D MoS₂
MoS₂
sulfur
S
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystal domain side length | 1.5 cm | MoS₂ |
wafer-level 2D MoS2 size |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,385,157 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of the growth of 2D MoS2.
FIG. 2 is a flow chart of the preparation of the 2D MoS₂ material of the present disclosure, where the substrate 1 is sodium-calcium glass and the substrate 2 …
FIG. 3 is a single-crystal domain size diagram of the 2D MoS₂ material prepared in Embodiment 1.
FIG. 4 is a scanning tunneling microscope diagram of the 2D MoS₂ prepared in Embodiment 1.
FIG. 5 is a size diagram of the double-layer 2D MoS₂ material prepared in Embodiment 2.
FIG. 6 is a size diagram of the wafer-level 2D MoS₂ material prepared in Embodiment 3.
FIG. 7 is a single-crystal domain size diagram of a 2D MoS₂ material prepared from molybdenum sulfide, sodium molybdate or molybdenum foil, where a is …
FIG. 8 is a single-crystal domain size diagram of 2D MoS₂ prepared in Comparative Embodiment 1.
FIG. 9 is a single-crystal domain size diagram of a pseudo-single-crystal TMDCs wafer prepared in Compara- tive Embodiment 2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of 2D MoS₂ materials, compris-ing following steps: using molybdenum source and sulfur as raw materials, using inert gas as carrier gas, transporting the raw materials to a molten sodium-calcium glass surface to deposit solid molybdenum sulfide through an interme-diate evaporation process, and obtaining the 2D MoS₂ materials by etching, spreading, sulfurization and precipitation; the step of transporting the raw materials to the molten sodium-calcium glass surface to deposit the solid molybdenum sulfide through the intermediate evapo-ration process comprises: placing the sulfur in a first temperature zone and placing the molybdenum source and the sodium-calcium glass in a second temperature zone; and heating the first temperature zone to 120-180° C., heating the second temperature zone to 500-1400° C., introducing the inert gas in a heating process, transporting the sulfur to the second temperature zone by the inert gas, and depositing on the sodium-calcium glass surface to obtain a solid molybdenum sulfide layer; 9 steps of the etching and the spreading are: after obtaining the solid molybdenum sulfide layer, adjusting a tem-perature of the second temperature zone to 900-1400° C., introducing oxygen, and etching the solid molyb-denum sulfide layer to obtain Na₂Mo₂O7, and steps of the sulfurization and precipitation are: after obtaining the Na₂Mo₂O7, stopping oxygen supply and carrying out a sulfurization and precipitation reaction to obtain the 2D MoS₂ materials.
The preparation method according to claim 1, wherein in a process of depositing to obtain the solid molybdenum sulfide layer, a heating rate of the first temperature zone is 5-50° C./min; a heating rate of the second temperature zone is 5-50° C./min; and the inert gas is argon, and a flow rate is 200-500 sccm.
The preparation method according to claim 1, wherein in a process of the etching and the spreading, a flow rate of the oxygen is 1-10 sccm; and a temperature adjustment rate of the second temperature zone is 0-50° C./min.
The preparation method according to claim 1, wherein the sulfur is sublimated sulfur; the molybdenum source is one of MoO3, sodium molybdate, molybdenum sulfide and molybdenum foil; and a dosage of the molybdenum source is 1 mg to 20 mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
2D MoS₂
MoS₂
sulfur
S
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystal domain side length | 1.5 cm | MoS₂ |
wafer-level 2D MoS2 size |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,385,157 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of the growth of 2D MoS2.
FIG. 2 is a flow chart of the preparation of the 2D MoS₂ material of the present disclosure, where the substrate 1 is sodium-calcium glass and the substrate 2 …
FIG. 3 is a single-crystal domain size diagram of the 2D MoS₂ material prepared in Embodiment 1.
FIG. 4 is a scanning tunneling microscope diagram of the 2D MoS₂ prepared in Embodiment 1.
FIG. 5 is a size diagram of the double-layer 2D MoS₂ material prepared in Embodiment 2.
FIG. 6 is a size diagram of the wafer-level 2D MoS₂ material prepared in Embodiment 3.
FIG. 7 is a single-crystal domain size diagram of a 2D MoS₂ material prepared from molybdenum sulfide, sodium molybdate or molybdenum foil, where a is …
FIG. 8 is a single-crystal domain size diagram of 2D MoS₂ prepared in Comparative Embodiment 1.
FIG. 9 is a single-crystal domain size diagram of a pseudo-single-crystal TMDCs wafer prepared in Compara- tive Embodiment 2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A preparation method of 2D MoS₂ materials, compris-ing following steps: using molybdenum source and sulfur as raw materials, using inert gas as carrier gas, transporting the raw materials to a molten sodium-calcium glass surface to deposit solid molybdenum sulfide through an interme-diate evaporation process, and obtaining the 2D MoS₂ materials by etching, spreading, sulfurization and precipitation; the step of transporting the raw materials to the molten sodium-calcium glass surface to deposit the solid molybdenum sulfide through the intermediate evapo-ration process comprises: placing the sulfur in a first temperature zone and placing the molybdenum source and the sodium-calcium glass in a second temperature zone; and heating the first temperature zone to 120-180° C., heating the second temperature zone to 500-1400° C., introducing the inert gas in a heating process, transporting the sulfur to the second temperature zone by the inert gas, and depositing on the sodium-calcium glass surface to obtain a solid molybdenum sulfide layer; 9 steps of the etching and the spreading are: after obtaining the solid molybdenum sulfide layer, adjusting a tem-perature of the second temperature zone to 900-1400° C., introducing oxygen, and etching the solid molyb-denum sulfide layer to obtain Na₂Mo₂O7, and steps of the sulfurization and precipitation are: after obtaining the Na₂Mo₂O7, stopping oxygen supply and carrying out a sulfurization and precipitation reaction to obtain the 2D MoS₂ materials.
The preparation method according to claim 1, wherein in a process of depositing to obtain the solid molybdenum sulfide layer, a heating rate of the first temperature zone is 5-50° C./min; a heating rate of the second temperature zone is 5-50° C./min; and the inert gas is argon, and a flow rate is 200-500 sccm.
The preparation method according to claim 1, wherein in a process of the etching and the spreading, a flow rate of the oxygen is 1-10 sccm; and a temperature adjustment rate of the second temperature zone is 0-50° C./min.
The preparation method according to claim 1, wherein the sulfur is sublimated sulfur; the molybdenum source is one of MoO3, sodium molybdate, molybdenum sulfide and molybdenum foil; and a dosage of the molybdenum source is 1 mg to 20 mg. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor
Materials described outside the worked examples.
2D MoS₂
MoS₂
sulfur
S
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
single-crystal domain side length | 1.5 cm | MoS₂ |
wafer-level 2D MoS2 size |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
molybdenum source
sodium-calcium glass
argon
Ar
MoO₃
sodium molybdate
molybdenum foil
Mo
Na₂Mo₂O₇
| 2 inches |
MoS₂ |
defect density of 2D MoS2 | ≤ 10000000000000 cm⁻² | MoS₂ |
precipitation/growth rate | 75 µm/s | MoS₂ |
thickness of 2D MoS2 | — | MoS₂ |
Thickness | 12–15 cm | — |
Flow Rate | 1–10 sccm | — |
Temperature | 120–180 °C | — |
Temperature | 500–1400 °C | — |
Temperature | 900–1400 °C | — |
Temperature | 5–50 °C | — |
Flow Rate | 200–500 sccm | — |
Temperature | 0–50 °C | — |
Cited non-patent literature · 2
molybdenum source
sodium-calcium glass
argon
Ar
MoO₃
sodium molybdate
molybdenum foil
Mo
Na₂Mo₂O₇
| 2 inches |
MoS₂ |
defect density of 2D MoS2 | ≤ 10000000000000 cm⁻² | MoS₂ |
precipitation/growth rate | 75 µm/s | MoS₂ |
thickness of 2D MoS2 | — | MoS₂ |
Thickness | 12–15 cm | — |
Flow Rate | 1–10 sccm | — |
Temperature | 120–180 °C | — |
Temperature | 500–1400 °C | — |
Temperature | 900–1400 °C | — |
Temperature | 5–50 °C | — |
Flow Rate | 200–500 sccm | — |
Temperature | 0–50 °C | — |
Cited non-patent literature · 2
molybdenum source
sodium-calcium glass
argon
Ar
MoO₃
sodium molybdate
molybdenum foil
Mo
Na₂Mo₂O₇
| 2 inches |
MoS₂ |
defect density of 2D MoS2 | ≤ 10000000000000 cm⁻² | MoS₂ |
precipitation/growth rate | 75 µm/s | MoS₂ |
thickness of 2D MoS2 | — | MoS₂ |
Thickness | 12–15 cm | — |
Flow Rate | 1–10 sccm | — |
Temperature | 120–180 °C | — |
Temperature | 500–1400 °C | — |
Temperature | 900–1400 °C | — |
Temperature | 5–50 °C | — |
Flow Rate | 200–500 sccm | — |
Temperature | 0–50 °C | — |
Cited non-patent literature · 2
molybdenum source
sodium-calcium glass
argon
Ar
MoO₃
sodium molybdate
molybdenum foil
Mo
Na₂Mo₂O₇
| 2 inches |
MoS₂ |
defect density of 2D MoS2 | ≤ 10000000000000 cm⁻² | MoS₂ |
precipitation/growth rate | 75 µm/s | MoS₂ |
thickness of 2D MoS2 | — | MoS₂ |
Thickness | 12–15 cm | — |
Flow Rate | 1–10 sccm | — |
Temperature | 120–180 °C | — |
Temperature | 500–1400 °C | — |
Temperature | 900–1400 °C | — |
Temperature | 5–50 °C | — |
Flow Rate | 200–500 sccm | — |
Temperature | 0–50 °C | — |
Cited non-patent literature · 2
