Patent
Atlas literature
Patent
US 12,566,372 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a shows a schematic illustration of a first step of a method for producing a nano-structured hBN-element according to a first inventive embodiment, wherein …
FIG. 2 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a second inventive embodiment, wherein a relief …
FIG. 3 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a third inventive embodiment, wherein a relief …
FIG. 4 shows a flow diagram illustrating the different 5 method steps for producing a nano-structured hBN-element according to the invention;
FIG. 5 shows freeform nanostructuring of hBN, wherein: a shows a grayscale-bitmap with a Mandelbrot set to be transferred on a polymer resist, in order to …
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 8 shows electronic Fourier surfaces in hBN, wherein: a shows a bitmap of an electronic Fourier surface with a hexagonal lattice, defined by superimposing …
FIG. 9 schematically shows the cross-sectional shape of the probe tip used in thermal scanning-probe lithography to pattern the polymer film (A fresh probe has …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
FIG. 81, defined with 9 sinusoids, each with 50 nm period.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a nano-structured element made of hexagonal boron nitride (hBN), comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching, wherein the relief structure of the nano-structured element is configured to modulate an electric field in a nearby active layer.
The method according to claim 1, wherein in step b.), thermal scanning-probe lithography is used to generate the relief structure directly in the surface of the resist.
The method according to claim 1, wherein in step b.), a stamp comprising the relief structure is used to generate the relief structure in the surface of the resist.
The method according to claim 1, wherein, in step c.), reactive-ion etching is used to transfer the relief structure from the resist into the hBN-element.
The method according to claim 1, wherein in step a.), the resist is placed on the hBN-element by spin-coating a material that forms the resist over the hBN-element.
The method according to claim 1, additionally com-prising the further steps of: (i) defining the relief structure in a computing device, whereby a model relief structure is obtained; and (ii) discretizing the model relief structure of step (i) into pixels in the computing device, whereby discretized controller data is obtained.
The method according to claim 1, wherein the relief structure comprises a plurality of elevations and recesses, and wherein the minimal distance between at least one of a) two successive elevations and b) two successive recesses is smaller than about 100 nm.
The method according to claim 1, wherein the maxi-mum depth of the relief structure is in a range between 4 nm and 20 nm.
The method according to claim 1, wherein the resist has a thickness of between 1 nm and 1 µm.
The method according to claim 1, wherein the resist is a polymer resist.
A device comprising one or several nano-structured elements made of hexagonal boron nidride (hBN) and having a relief structure provided for influencing the elec-tronic properties of the device in a targeted way, wherein the relief structure of the one or several nano-structured ele-ments is configured to modulate the electric field in a nearby active layer.
The device according to claim 15, wherein the one or several nano-structured elements form an integrated part of a heterostructure with several layers that are held together by means of van der Waals forces.
The device according to claim 15, wherein the one or several nano-structured elements form an electronic Fourier-surface for modulating the electric field in the nearby active layer.
The device according to claim 15, wherein the one or several nano-structured hBN-elements are produced by means of a method comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nano-structured hBN device/heterostructure with electronic Fourier-surface
Materials described outside the worked examples.
hexagonal boron nitride
hBN
polymer resist
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–50000 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,566,372 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a shows a schematic illustration of a first step of a method for producing a nano-structured hBN-element according to a first inventive embodiment, wherein …
FIG. 2 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a second inventive embodiment, wherein a relief …
FIG. 3 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a third inventive embodiment, wherein a relief …
FIG. 4 shows a flow diagram illustrating the different 5 method steps for producing a nano-structured hBN-element according to the invention;
FIG. 5 shows freeform nanostructuring of hBN, wherein: a shows a grayscale-bitmap with a Mandelbrot set to be transferred on a polymer resist, in order to …
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 8 shows electronic Fourier surfaces in hBN, wherein: a shows a bitmap of an electronic Fourier surface with a hexagonal lattice, defined by superimposing …
FIG. 9 schematically shows the cross-sectional shape of the probe tip used in thermal scanning-probe lithography to pattern the polymer film (A fresh probe has …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
FIG. 81, defined with 9 sinusoids, each with 50 nm period.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a nano-structured element made of hexagonal boron nitride (hBN), comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching, wherein the relief structure of the nano-structured element is configured to modulate an electric field in a nearby active layer.
The method according to claim 1, wherein in step b.), thermal scanning-probe lithography is used to generate the relief structure directly in the surface of the resist.
The method according to claim 1, wherein in step b.), a stamp comprising the relief structure is used to generate the relief structure in the surface of the resist.
The method according to claim 1, wherein, in step c.), reactive-ion etching is used to transfer the relief structure from the resist into the hBN-element.
The method according to claim 1, wherein in step a.), the resist is placed on the hBN-element by spin-coating a material that forms the resist over the hBN-element.
The method according to claim 1, additionally com-prising the further steps of: (i) defining the relief structure in a computing device, whereby a model relief structure is obtained; and (ii) discretizing the model relief structure of step (i) into pixels in the computing device, whereby discretized controller data is obtained.
The method according to claim 1, wherein the relief structure comprises a plurality of elevations and recesses, and wherein the minimal distance between at least one of a) two successive elevations and b) two successive recesses is smaller than about 100 nm.
The method according to claim 1, wherein the maxi-mum depth of the relief structure is in a range between 4 nm and 20 nm.
The method according to claim 1, wherein the resist has a thickness of between 1 nm and 1 µm.
The method according to claim 1, wherein the resist is a polymer resist.
A device comprising one or several nano-structured elements made of hexagonal boron nidride (hBN) and having a relief structure provided for influencing the elec-tronic properties of the device in a targeted way, wherein the relief structure of the one or several nano-structured ele-ments is configured to modulate the electric field in a nearby active layer.
The device according to claim 15, wherein the one or several nano-structured elements form an integrated part of a heterostructure with several layers that are held together by means of van der Waals forces.
The device according to claim 15, wherein the one or several nano-structured elements form an electronic Fourier-surface for modulating the electric field in the nearby active layer.
The device according to claim 15, wherein the one or several nano-structured hBN-elements are produced by means of a method comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nano-structured hBN device/heterostructure with electronic Fourier-surface
Materials described outside the worked examples.
hexagonal boron nitride
hBN
polymer resist
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–50000 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,566,372 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a shows a schematic illustration of a first step of a method for producing a nano-structured hBN-element according to a first inventive embodiment, wherein …
FIG. 2 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a second inventive embodiment, wherein a relief …
FIG. 3 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a third inventive embodiment, wherein a relief …
FIG. 4 shows a flow diagram illustrating the different 5 method steps for producing a nano-structured hBN-element according to the invention;
FIG. 5 shows freeform nanostructuring of hBN, wherein: a shows a grayscale-bitmap with a Mandelbrot set to be transferred on a polymer resist, in order to …
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 8 shows electronic Fourier surfaces in hBN, wherein: a shows a bitmap of an electronic Fourier surface with a hexagonal lattice, defined by superimposing …
FIG. 9 schematically shows the cross-sectional shape of the probe tip used in thermal scanning-probe lithography to pattern the polymer film (A fresh probe has …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
FIG. 81, defined with 9 sinusoids, each with 50 nm period.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a nano-structured element made of hexagonal boron nitride (hBN), comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching, wherein the relief structure of the nano-structured element is configured to modulate an electric field in a nearby active layer.
The method according to claim 1, wherein in step b.), thermal scanning-probe lithography is used to generate the relief structure directly in the surface of the resist.
The method according to claim 1, wherein in step b.), a stamp comprising the relief structure is used to generate the relief structure in the surface of the resist.
The method according to claim 1, wherein, in step c.), reactive-ion etching is used to transfer the relief structure from the resist into the hBN-element.
The method according to claim 1, wherein in step a.), the resist is placed on the hBN-element by spin-coating a material that forms the resist over the hBN-element.
The method according to claim 1, additionally com-prising the further steps of: (i) defining the relief structure in a computing device, whereby a model relief structure is obtained; and (ii) discretizing the model relief structure of step (i) into pixels in the computing device, whereby discretized controller data is obtained.
The method according to claim 1, wherein the relief structure comprises a plurality of elevations and recesses, and wherein the minimal distance between at least one of a) two successive elevations and b) two successive recesses is smaller than about 100 nm.
The method according to claim 1, wherein the maxi-mum depth of the relief structure is in a range between 4 nm and 20 nm.
The method according to claim 1, wherein the resist has a thickness of between 1 nm and 1 µm.
The method according to claim 1, wherein the resist is a polymer resist.
A device comprising one or several nano-structured elements made of hexagonal boron nidride (hBN) and having a relief structure provided for influencing the elec-tronic properties of the device in a targeted way, wherein the relief structure of the one or several nano-structured ele-ments is configured to modulate the electric field in a nearby active layer.
The device according to claim 15, wherein the one or several nano-structured elements form an integrated part of a heterostructure with several layers that are held together by means of van der Waals forces.
The device according to claim 15, wherein the one or several nano-structured elements form an electronic Fourier-surface for modulating the electric field in the nearby active layer.
The device according to claim 15, wherein the one or several nano-structured hBN-elements are produced by means of a method comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nano-structured hBN device/heterostructure with electronic Fourier-surface
Materials described outside the worked examples.
hexagonal boron nitride
hBN
polymer resist
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–50000 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,566,372 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a shows a schematic illustration of a first step of a method for producing a nano-structured hBN-element according to a first inventive embodiment, wherein …
FIG. 2 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a second inventive embodiment, wherein a relief …
FIG. 3 shows a schematic illustration of a method for producing a nano-structured hBN-element according to a third inventive embodiment, wherein a relief …
FIG. 4 shows a flow diagram illustrating the different 5 method steps for producing a nano-structured hBN-element according to the invention;
FIG. 5 shows freeform nanostructuring of hBN, wherein: a shows a grayscale-bitmap with a Mandelbrot set to be transferred on a polymer resist, in order to …
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 8 shows electronic Fourier surfaces in hBN, wherein: a shows a bitmap of an electronic Fourier surface with a hexagonal lattice, defined by superimposing …
FIG. 9 schematically shows the cross-sectional shape of the probe tip used in thermal scanning-probe lithography to pattern the polymer film (A fresh probe has …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
FIG. 81, defined with 9 sinusoids, each with 50 nm period.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a nano-structured element made of hexagonal boron nitride (hBN), comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching, wherein the relief structure of the nano-structured element is configured to modulate an electric field in a nearby active layer.
The method according to claim 1, wherein in step b.), thermal scanning-probe lithography is used to generate the relief structure directly in the surface of the resist.
The method according to claim 1, wherein in step b.), a stamp comprising the relief structure is used to generate the relief structure in the surface of the resist.
The method according to claim 1, wherein, in step c.), reactive-ion etching is used to transfer the relief structure from the resist into the hBN-element.
The method according to claim 1, wherein in step a.), the resist is placed on the hBN-element by spin-coating a material that forms the resist over the hBN-element.
The method according to claim 1, additionally com-prising the further steps of: (i) defining the relief structure in a computing device, whereby a model relief structure is obtained; and (ii) discretizing the model relief structure of step (i) into pixels in the computing device, whereby discretized controller data is obtained.
The method according to claim 1, wherein the relief structure comprises a plurality of elevations and recesses, and wherein the minimal distance between at least one of a) two successive elevations and b) two successive recesses is smaller than about 100 nm.
The method according to claim 1, wherein the maxi-mum depth of the relief structure is in a range between 4 nm and 20 nm.
The method according to claim 1, wherein the resist has a thickness of between 1 nm and 1 µm.
The method according to claim 1, wherein the resist is a polymer resist.
A device comprising one or several nano-structured elements made of hexagonal boron nidride (hBN) and having a relief structure provided for influencing the elec-tronic properties of the device in a targeted way, wherein the relief structure of the one or several nano-structured ele-ments is configured to modulate the electric field in a nearby active layer.
The device according to claim 15, wherein the one or several nano-structured elements form an integrated part of a heterostructure with several layers that are held together by means of van der Waals forces.
The device according to claim 15, wherein the one or several nano-structured elements form an electronic Fourier-surface for modulating the electric field in the nearby active layer.
The device according to claim 15, wherein the one or several nano-structured hBN-elements are produced by means of a method comprising the steps of: a.) placing a resist on the hBN-element; b.) generating a relief structure in the surface of the resist; and c.) transferring the relief structure from the resist into the hBN-element by means of etching. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
nano-structured hBN device/heterostructure with electronic Fourier-surface
Materials described outside the worked examples.
hexagonal boron nitride
hBN
polymer resist
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.1–50000 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
silicon dioxide
SiO₂
sulfur hexafluoride
SF₆
silicon
Si
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
| — |
Thickness | 25–35 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 4–20 nm | — |
Thickness | 4–10 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 5–50 nm | — |
Thickness | 0.2–25 nm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 0.1 nm | — |
Cited non-patent literature · 2
silicon dioxide
SiO₂
sulfur hexafluoride
SF₆
silicon
Si
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
| — |
Thickness | 25–35 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 4–20 nm | — |
Thickness | 4–10 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 5–50 nm | — |
Thickness | 0.2–25 nm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 0.1 nm | — |
Cited non-patent literature · 2
silicon dioxide
SiO₂
sulfur hexafluoride
SF₆
silicon
Si
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
| — |
Thickness | 25–35 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 4–20 nm | — |
Thickness | 4–10 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 5–50 nm | — |
Thickness | 0.2–25 nm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 0.1 nm | — |
Cited non-patent literature · 2
silicon dioxide
SiO₂
sulfur hexafluoride
SF₆
silicon
Si
FIG. 6 illustrates the capabilities of freeform nanostruc- turing of hBN, wherein: a shows a grayscale-bitmap (left half) used to produce an hBN-flake with a …
FIG. 7 shows hBN grating couplers, wherein: a shows an 35 SEM image of a sinusoidal grating coupler patterned in an hBN flake; b schematically shows the optical …
FIG. 10a shows a simulation of a single-sinusoidal elec- tronic Fourier surface in hBN with a period of 50 nm (The 65 top hBN has a thickness of 25 nm with a …
| — |
Thickness | 25–35 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 4–20 nm | — |
Thickness | 4–10 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 5–50 nm | — |
Thickness | 0.2–25 nm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 0.1 nm | — |
Cited non-patent literature · 2
