GRAPHENE (MULTILAYER) BORON NIRIDE HETEROEPITAXY FOR ELECTRONIC DEVICE APPLICATIONS

JEFFRY A. KELBER

Patent

Atlas literature

Patent

US 8,946,692

GRAPHENE (MULTILAYER) BORON NIRIDE HETEROEPITAXY FOR ELECTRONIC DEVICE APPLICATIONS

JEFFRY A. KELBER

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 2 dependent

1
IndependentBNCgraphene/multilayer-BN heterostructure
A composition of matter, comprising: an ordered ﬁlm of boron nitride (B N) prepared by atomic layer deposition comprised of m ultiple layers and having a thick n ess greater than one atomic layer of hexagonal boron nitride, said ordered ﬁl m of BN exhibiting at least one majo r surface; and a layer of graphene formed on sa id m ajor surface b y chemical vapor deposition.
2
IndependentBNgraphene/multilayer-BN heterostructure
(PREVIOUS LY P RE SENTE D) The co m positi o n of matter according to Clai m 1, wherein said ordered ﬁlm of BN exhibits a band gap of about 2eV-6 e V.
3
IndependentBNCgraphene/multilayer-BN/substrate heterostructure
The composition of matter according to Cl aim 1, w herei n said o rdered ﬁlm of BN is positioned o n a substrate o n a side of said ordered ﬁlm of BN opposite said at least o ne maj or surface.
1. 8
  Dependent← claim 3BNCsubstrate (Ru, Pd, Ni, Cu, Nb, Pt, or Al₂O₃)graphene/multilayer-BN/substrate heterostructure
  8. (P REVIOUSLY PRESENT ED) T he composition of m att e r ac c ordin g to Claim 3, w herein t h e substrate co m prises Ru, P d, Ni, Cu, N b, P t or Al₂O3.
2. 9
  Dependent← claim 3BNCSimetal film on silicongraphene/multilayer-BN/metal-film/silicon heterostructure
  T he composition of matter according to Claim 3, whe rein the substrate comprises silicon w ith a m etal ﬁlm provided be tw een t h e silicon and said ordered ﬁlm of BN.
4
IndependentBNC(111)-textured transition metal substrategraphene/multilayer-BN/substrate heterostructure
(PREVIOUSL Y PR ESENTED) The composition of matter according to Cl aim 3, wherein the substrate is a (111)-text ured transition metal.
6
IndependentBNCmetal interconnection or packaging level metal line on CMOS substrategraphene/multilayer-BN/metal-line/CMOS heterostructure
(PREVIO USL Y PRESENTED) The co mp ositio n of m atter accordi n g to Clai m 3, wherein the substrate is a m etal interconnection or pac kaging level metal l ine on a complementary m etal oxide semiconductor substrate.
7
IndependentBNCmetal interconnection or packaging level metal line on CMOS substratemetal grains (Ru, Pt, Ni, Nb, or Cu)graphene/multilayer-BN/metal-line/CMOS heterostructure
(PREVIO USL Y PRESEN TED) The composition of m atter according to Clai m 6, w herein th e metal interco nnect ion or pac kaging level metal line comprises gr ains of Ru, Pt, Ni, Nb, or Cu.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene/multilayer-BN heterostructure

Cchannel/overlayer

BNdielectric/buffer

graphene/multilayer-BN/substrate heterostructure

Cchannel/overlayer

BNdielectric/buffer

substrate (Ru, Pd, Ni, Cu, Nb, Pt, or Al₂O₃)substrate

graphene/multilayer-BN/metal-line/CMOS heterostructure

Materials

Materials described outside the worked examples.

hexagonal boron nitride film (multilayer, ALD-grown)

Dielectric/Substrate Layer

graphene

Overlayer/Channel Material

Process steps

Additional fabrication and treatment steps described in the patent.

Ald Growth

Step 1

Process details

method:atomic layer deposition (ALD), layer-by-layer alternating precursor exposure

precursors:BX₃ (X = Cl, Br, I, alkyl such as CH₃), NH₃

target thickness:greater than one atomic layer (multilayer)

substrate surfaces:Ni(111), Cu(111), Rh(111), Ru(0001), Pd, Nb, Pt, Al₂O₃

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Optical Band Gap	5.97 eV	BN
Optical Band Gap

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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