Patent
US 8,969,779SENSING OF PHOTONS
Martti VOUTILAINEN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,969,779Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a preamplifier for the photodetecting structure, whe r e wherein the graphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said photodetecting structure comprises source and drain electrodes configured to f u nction as gates for the graphene field effect transistor.
The apparatus of claim 1, wherein said photodetecting structure is configured to convert photons into an electrical signal, and said pre-amplifier is configured to amplify that signal.
The apparatus of claim 1, comprising in a stacked structure: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The apparatus of claim 1, comprising a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The apparatus of claim 1, comprising a graphene nanoribbon as the channel of the graphene field effect transistor.
The apparatus ef claim 1 compris An a pparatus, comp rising: a p hotodetecting structure with one or more photon sensing l a yers of gr a phene; and an integrated gra phene field effect transistor configured to function as a pre- amplifier for the photodetecting structure, wherein the g raphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said graphene field effect transistor is implemented in an amplifier layer and additi e nally a reset transistor is integrated into said amplifier layer and is configured to reset generated charge when needed.
An apparatus according to claim 1, wherein the apparatus is selected from the greu eonsisting one of: an image sensor for a black and white image system, and an image sensor of a color image system, such as an RGB coded system.
An apparatus according to claim 1, wherein the apparatus is a handheld mobile communication device.
. canceled
A method, comprising: detecting photons in a photodetecting structure with one or more photon sensing 5 760125v. 1I Docket No. 1004289.558US layers of graphene; and amplifying photocurrent generated by the photodetecting structure in a graphene field effect transistor functioning as a pre-amplifier for the photodetecting structure, whe re wherei n the graphene field effect transistor is vertically integrated to the photodetecting structure ' and using source and drain electrodes comprised by said p hotodetectin g structure as g ates for the grap hene field effect transistor.
The method of claim 10, comprising providing a stacked structure compris ing: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The method of claim 10, comprising providing a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The method of claim 10, comprising using a graphene nanoribbon as the channel of the graphene field effect transistor.
A method according to claim 10, comprising: manufacturing said photodetecting structure with one or more photon sensing layers of graphene and said vertically integrated graphene field effect transistor by chemical vapor deposition.
. canceled
The method of laim 10, mpising A method, 6 760125v. I Docket No. 1004289.558US comp rising: detecting photons in a photodetecting structure with one or more photon sensin g lay ers of gr a phene; amplifying photocurrent generated by the photodetecting structure in a gr a phene field effect transistor functioning as a pre-amplifier for the photodetecting structure, wherein the gra phene field effect transistor is vertically integrated to the photodetecting structure: and integrating a reset transistor in an amplifier layer where ale said graphene field effect transistor also is implemented.
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector with vertically integrated graphene FET pre-amplifier
reset transistor in amplifier layer
No layer stack recorded.
Materials described outside the worked examples.
graphene (photon sensing layer)
graphene (field effect transistor)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,969,779Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a preamplifier for the photodetecting structure, whe r e wherein the graphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said photodetecting structure comprises source and drain electrodes configured to f u nction as gates for the graphene field effect transistor.
The apparatus of claim 1, wherein said photodetecting structure is configured to convert photons into an electrical signal, and said pre-amplifier is configured to amplify that signal.
The apparatus of claim 1, comprising in a stacked structure: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The apparatus of claim 1, comprising a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The apparatus of claim 1, comprising a graphene nanoribbon as the channel of the graphene field effect transistor.
The apparatus ef claim 1 compris An a pparatus, comp rising: a p hotodetecting structure with one or more photon sensing l a yers of gr a phene; and an integrated gra phene field effect transistor configured to function as a pre- amplifier for the photodetecting structure, wherein the g raphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said graphene field effect transistor is implemented in an amplifier layer and additi e nally a reset transistor is integrated into said amplifier layer and is configured to reset generated charge when needed.
An apparatus according to claim 1, wherein the apparatus is selected from the greu eonsisting one of: an image sensor for a black and white image system, and an image sensor of a color image system, such as an RGB coded system.
An apparatus according to claim 1, wherein the apparatus is a handheld mobile communication device.
. canceled
A method, comprising: detecting photons in a photodetecting structure with one or more photon sensing 5 760125v. 1I Docket No. 1004289.558US layers of graphene; and amplifying photocurrent generated by the photodetecting structure in a graphene field effect transistor functioning as a pre-amplifier for the photodetecting structure, whe re wherei n the graphene field effect transistor is vertically integrated to the photodetecting structure ' and using source and drain electrodes comprised by said p hotodetectin g structure as g ates for the grap hene field effect transistor.
The method of claim 10, comprising providing a stacked structure compris ing: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The method of claim 10, comprising providing a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The method of claim 10, comprising using a graphene nanoribbon as the channel of the graphene field effect transistor.
A method according to claim 10, comprising: manufacturing said photodetecting structure with one or more photon sensing layers of graphene and said vertically integrated graphene field effect transistor by chemical vapor deposition.
. canceled
The method of laim 10, mpising A method, 6 760125v. I Docket No. 1004289.558US comp rising: detecting photons in a photodetecting structure with one or more photon sensin g lay ers of gr a phene; amplifying photocurrent generated by the photodetecting structure in a gr a phene field effect transistor functioning as a pre-amplifier for the photodetecting structure, wherein the gra phene field effect transistor is vertically integrated to the photodetecting structure: and integrating a reset transistor in an amplifier layer where ale said graphene field effect transistor also is implemented.
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector with vertically integrated graphene FET pre-amplifier
reset transistor in amplifier layer
No layer stack recorded.
Materials described outside the worked examples.
graphene (photon sensing layer)
graphene (field effect transistor)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,969,779Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a preamplifier for the photodetecting structure, whe r e wherein the graphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said photodetecting structure comprises source and drain electrodes configured to f u nction as gates for the graphene field effect transistor.
The apparatus of claim 1, wherein said photodetecting structure is configured to convert photons into an electrical signal, and said pre-amplifier is configured to amplify that signal.
The apparatus of claim 1, comprising in a stacked structure: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The apparatus of claim 1, comprising a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The apparatus of claim 1, comprising a graphene nanoribbon as the channel of the graphene field effect transistor.
The apparatus ef claim 1 compris An a pparatus, comp rising: a p hotodetecting structure with one or more photon sensing l a yers of gr a phene; and an integrated gra phene field effect transistor configured to function as a pre- amplifier for the photodetecting structure, wherein the g raphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said graphene field effect transistor is implemented in an amplifier layer and additi e nally a reset transistor is integrated into said amplifier layer and is configured to reset generated charge when needed.
An apparatus according to claim 1, wherein the apparatus is selected from the greu eonsisting one of: an image sensor for a black and white image system, and an image sensor of a color image system, such as an RGB coded system.
An apparatus according to claim 1, wherein the apparatus is a handheld mobile communication device.
. canceled
A method, comprising: detecting photons in a photodetecting structure with one or more photon sensing 5 760125v. 1I Docket No. 1004289.558US layers of graphene; and amplifying photocurrent generated by the photodetecting structure in a graphene field effect transistor functioning as a pre-amplifier for the photodetecting structure, whe re wherei n the graphene field effect transistor is vertically integrated to the photodetecting structure ' and using source and drain electrodes comprised by said p hotodetectin g structure as g ates for the grap hene field effect transistor.
The method of claim 10, comprising providing a stacked structure compris ing: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The method of claim 10, comprising providing a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The method of claim 10, comprising using a graphene nanoribbon as the channel of the graphene field effect transistor.
A method according to claim 10, comprising: manufacturing said photodetecting structure with one or more photon sensing layers of graphene and said vertically integrated graphene field effect transistor by chemical vapor deposition.
. canceled
The method of laim 10, mpising A method, 6 760125v. I Docket No. 1004289.558US comp rising: detecting photons in a photodetecting structure with one or more photon sensin g lay ers of gr a phene; amplifying photocurrent generated by the photodetecting structure in a gr a phene field effect transistor functioning as a pre-amplifier for the photodetecting structure, wherein the gra phene field effect transistor is vertically integrated to the photodetecting structure: and integrating a reset transistor in an amplifier layer where ale said graphene field effect transistor also is implemented.
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector with vertically integrated graphene FET pre-amplifier
reset transistor in amplifier layer
No layer stack recorded.
Materials described outside the worked examples.
graphene (photon sensing layer)
graphene (field effect transistor)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,969,779Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus, comprising: a photodetecting structure with one or more photon sensing layers of graphene; and an integrated graphene field effect transistor configured to function as a preamplifier for the photodetecting structure, whe r e wherein the graphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said photodetecting structure comprises source and drain electrodes configured to f u nction as gates for the graphene field effect transistor.
The apparatus of claim 1, wherein said photodetecting structure is configured to convert photons into an electrical signal, and said pre-amplifier is configured to amplify that signal.
The apparatus of claim 1, comprising in a stacked structure: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The apparatus of claim 1, comprising a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The apparatus of claim 1, comprising a graphene nanoribbon as the channel of the graphene field effect transistor.
The apparatus ef claim 1 compris An a pparatus, comp rising: a p hotodetecting structure with one or more photon sensing l a yers of gr a phene; and an integrated gra phene field effect transistor configured to function as a pre- amplifier for the photodetecting structure, wherein the g raphene field effect transistor is vertically integrated to the photodetecting structure, and wherein said graphene field effect transistor is implemented in an amplifier layer and additi e nally a reset transistor is integrated into said amplifier layer and is configured to reset generated charge when needed.
An apparatus according to claim 1, wherein the apparatus is selected from the greu eonsisting one of: an image sensor for a black and white image system, and an image sensor of a color image system, such as an RGB coded system.
An apparatus according to claim 1, wherein the apparatus is a handheld mobile communication device.
. canceled
A method, comprising: detecting photons in a photodetecting structure with one or more photon sensing 5 760125v. 1I Docket No. 1004289.558US layers of graphene; and amplifying photocurrent generated by the photodetecting structure in a graphene field effect transistor functioning as a pre-amplifier for the photodetecting structure, whe re wherei n the graphene field effect transistor is vertically integrated to the photodetecting structure ' and using source and drain electrodes comprised by said p hotodetectin g structure as g ates for the grap hene field effect transistor.
The method of claim 10, comprising providing a stacked structure compris ing: said photon sensing layer(s); and said pre-amplifier above said photon sensing layer(s).
The method of claim 10, comprising providing a plurality of layers on top of each other, each layer comprising said photodetecting structure and said vertically integrated graphene field effect transistor. original
The method of claim 10, comprising using a graphene nanoribbon as the channel of the graphene field effect transistor.
A method according to claim 10, comprising: manufacturing said photodetecting structure with one or more photon sensing layers of graphene and said vertically integrated graphene field effect transistor by chemical vapor deposition.
. canceled
The method of laim 10, mpising A method, 6 760125v. I Docket No. 1004289.558US comp rising: detecting photons in a photodetecting structure with one or more photon sensin g lay ers of gr a phene; amplifying photocurrent generated by the photodetecting structure in a gr a phene field effect transistor functioning as a pre-amplifier for the photodetecting structure, wherein the gra phene field effect transistor is vertically integrated to the photodetecting structure: and integrating a reset transistor in an amplifier layer where ale said graphene field effect transistor also is implemented.
Layer stacks claimed or described, ordered top of device to substrate.
graphene photodetector with vertically integrated graphene FET pre-amplifier
reset transistor in amplifier layer
No layer stack recorded.
Materials described outside the worked examples.
graphene (photon sensing layer)
graphene (field effect transistor)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
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monolayer graphene
bilayer graphene
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