Patent
US 10,252,914NANOSTRUCTURED GRAPHENE WITH ATOMICALLY-SMOOTH EDGES
Michael Scott Arnold
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,252,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 provides a schematic illustration of the conversion of an atomically- disordered graphene edge having randomly spaced protrusions of carbon atoms (panel …
FIG. 2 shows schematic illustrations of: (a) a layer of graphene into which an array of circular holes with disordered edges has been lithographically …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
Patterned graphene on a substrate, comprising the substrate and a layer of graphene on the substrate, the layer of graphene comprising a graphene antidot lattice comprising at least 1,00, holes defined in the layer of graphene, wherein the holes are hexagonal in shape and aligned with the hexagonal crystal symmetry of the graphene lattice, the graphene antidot lattice having an area of at least 1 p m 2 and a hole density of at least 1 x 10 11 holes/cm 2, and further wherein the holes have internal edges have a zigzag configuration. Currently amended
The patterned graphene of claim 2, wherein the holes have diameters of 50 nm or less. Original
The patterned graphene of claim 2, wherein the holes have diameters of 10 nm or less. Original
The patterned graphene of claim 2 [[1]] having an area of at least 1 mm 2. Currently amended
Patterned graphene, comprising a graphene nanoribbon array comprising at least 1,00, graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the nanoribbons have longitudinal edges that have a root mean square roughness no greater than 5 nm over a length of at least 50 nm and are aligned with the crystallographic direction of the graphene, and further wherein the longitudinal edges of the nanoribbons have a zigzag configuration extending over a length of at least 50 nm. Currently amended
The patterned graphene of claim 5, wherein the graphene nanoribbons have a pitch of 500 nm or less and the graphene nanoribbon array covers an area of at least 1 pm2 Original
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 50 nm,. Currently amended
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 50 nm,. SVG 15184036.10-01-2018.JMQQHUIORXEAPX0.CLM.1.svg 0.16 1.25 Black and white Currently amended
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 100 nm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 nm. New
15 The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 pm. New
The patterned graphene of claim 5, wherein the nanoribbons have widths of no greater than 5 nm. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene antidot lattice
graphene nanoribbon array
Materials described outside the worked examples.
graphene
C
carbon-containing molecules
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon edge rms roughness (claimed upper bound) | 5 nm | C |
Patent
Atlas literature
Patent
US 10,252,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 provides a schematic illustration of the conversion of an atomically- disordered graphene edge having randomly spaced protrusions of carbon atoms (panel …
FIG. 2 shows schematic illustrations of: (a) a layer of graphene into which an array of circular holes with disordered edges has been lithographically …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
Patterned graphene on a substrate, comprising the substrate and a layer of graphene on the substrate, the layer of graphene comprising a graphene antidot lattice comprising at least 1,00, holes defined in the layer of graphene, wherein the holes are hexagonal in shape and aligned with the hexagonal crystal symmetry of the graphene lattice, the graphene antidot lattice having an area of at least 1 p m 2 and a hole density of at least 1 x 10 11 holes/cm 2, and further wherein the holes have internal edges have a zigzag configuration. Currently amended
The patterned graphene of claim 2, wherein the holes have diameters of 50 nm or less. Original
The patterned graphene of claim 2, wherein the holes have diameters of 10 nm or less. Original
The patterned graphene of claim 2 [[1]] having an area of at least 1 mm 2. Currently amended
Patterned graphene, comprising a graphene nanoribbon array comprising at least 1,00, graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the nanoribbons have longitudinal edges that have a root mean square roughness no greater than 5 nm over a length of at least 50 nm and are aligned with the crystallographic direction of the graphene, and further wherein the longitudinal edges of the nanoribbons have a zigzag configuration extending over a length of at least 50 nm. Currently amended
The patterned graphene of claim 5, wherein the graphene nanoribbons have a pitch of 500 nm or less and the graphene nanoribbon array covers an area of at least 1 pm2 Original
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 50 nm,. Currently amended
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 50 nm,. SVG 15184036.10-01-2018.JMQQHUIORXEAPX0.CLM.1.svg 0.16 1.25 Black and white Currently amended
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 100 nm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 nm. New
15 The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 pm. New
The patterned graphene of claim 5, wherein the nanoribbons have widths of no greater than 5 nm. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene antidot lattice
graphene nanoribbon array
Materials described outside the worked examples.
graphene
C
carbon-containing molecules
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon edge rms roughness (claimed upper bound) | 5 nm | C |
Patent
Atlas literature
Patent
US 10,252,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 provides a schematic illustration of the conversion of an atomically- disordered graphene edge having randomly spaced protrusions of carbon atoms (panel …
FIG. 2 shows schematic illustrations of: (a) a layer of graphene into which an array of circular holes with disordered edges has been lithographically …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
Patterned graphene on a substrate, comprising the substrate and a layer of graphene on the substrate, the layer of graphene comprising a graphene antidot lattice comprising at least 1,00, holes defined in the layer of graphene, wherein the holes are hexagonal in shape and aligned with the hexagonal crystal symmetry of the graphene lattice, the graphene antidot lattice having an area of at least 1 p m 2 and a hole density of at least 1 x 10 11 holes/cm 2, and further wherein the holes have internal edges have a zigzag configuration. Currently amended
The patterned graphene of claim 2, wherein the holes have diameters of 50 nm or less. Original
The patterned graphene of claim 2, wherein the holes have diameters of 10 nm or less. Original
The patterned graphene of claim 2 [[1]] having an area of at least 1 mm 2. Currently amended
Patterned graphene, comprising a graphene nanoribbon array comprising at least 1,00, graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the nanoribbons have longitudinal edges that have a root mean square roughness no greater than 5 nm over a length of at least 50 nm and are aligned with the crystallographic direction of the graphene, and further wherein the longitudinal edges of the nanoribbons have a zigzag configuration extending over a length of at least 50 nm. Currently amended
The patterned graphene of claim 5, wherein the graphene nanoribbons have a pitch of 500 nm or less and the graphene nanoribbon array covers an area of at least 1 pm2 Original
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 50 nm,. Currently amended
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 50 nm,. SVG 15184036.10-01-2018.JMQQHUIORXEAPX0.CLM.1.svg 0.16 1.25 Black and white Currently amended
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 100 nm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 nm. New
15 The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 pm. New
The patterned graphene of claim 5, wherein the nanoribbons have widths of no greater than 5 nm. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene antidot lattice
graphene nanoribbon array
Materials described outside the worked examples.
graphene
C
carbon-containing molecules
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon edge rms roughness (claimed upper bound) | 5 nm | C |
Patent
Atlas literature
Patent
US 10,252,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 provides a schematic illustration of the conversion of an atomically- disordered graphene edge having randomly spaced protrusions of carbon atoms (panel …
FIG. 2 shows schematic illustrations of: (a) a layer of graphene into which an array of circular holes with disordered edges has been lithographically …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
Patterned graphene on a substrate, comprising the substrate and a layer of graphene on the substrate, the layer of graphene comprising a graphene antidot lattice comprising at least 1,00, holes defined in the layer of graphene, wherein the holes are hexagonal in shape and aligned with the hexagonal crystal symmetry of the graphene lattice, the graphene antidot lattice having an area of at least 1 p m 2 and a hole density of at least 1 x 10 11 holes/cm 2, and further wherein the holes have internal edges have a zigzag configuration. Currently amended
The patterned graphene of claim 2, wherein the holes have diameters of 50 nm or less. Original
The patterned graphene of claim 2, wherein the holes have diameters of 10 nm or less. Original
The patterned graphene of claim 2 [[1]] having an area of at least 1 mm 2. Currently amended
Patterned graphene, comprising a graphene nanoribbon array comprising at least 1,00, graphene nanoribbons aligned in a parallel arrangement along their longitudinal axes, wherein the nanoribbons have longitudinal edges that have a root mean square roughness no greater than 5 nm over a length of at least 50 nm and are aligned with the crystallographic direction of the graphene, and further wherein the longitudinal edges of the nanoribbons have a zigzag configuration extending over a length of at least 50 nm. Currently amended
The patterned graphene of claim 5, wherein the graphene nanoribbons have a pitch of 500 nm or less and the graphene nanoribbon array covers an area of at least 1 pm2 Original
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 50 nm,. Currently amended
The patterned graphene of claim 5,,, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 50 nm,. SVG 15184036.10-01-2018.JMQQHUIORXEAPX0.CLM.1.svg 0.16 1.25 Black and white Currently amended
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 100 nm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 3 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 nm. New
15 The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 1 pm. New
The patterned graphene of claim 5, wherein the longitudinal edges of the nanoribbons have a root mean square roughness no greater than 1 nm and a zigzag configuration extending over a length of at least 100 pm. New
The patterned graphene of claim 5, wherein the nanoribbons have widths of no greater than 5 nm. New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene antidot lattice
graphene nanoribbon array
Materials described outside the worked examples.
graphene
C
carbon-containing molecules
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene nanoribbon edge rms roughness (claimed upper bound) | 5 nm | C |
aliphatic hydrocarbons
aromatic hydrocarbons
graphene nanoribbon edge rms roughness (description embodiment) |
| 3 nm |
C |
graphene nanoribbon edge rms roughness (description embodiment) | 1 nm | C |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 3 nm | — |
aliphatic hydrocarbons
aromatic hydrocarbons
graphene nanoribbon edge rms roughness (description embodiment) |
| 3 nm |
C |
graphene nanoribbon edge rms roughness (description embodiment) | 1 nm | C |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 3 nm | — |
aliphatic hydrocarbons
aromatic hydrocarbons
graphene nanoribbon edge rms roughness (description embodiment) |
| 3 nm |
C |
graphene nanoribbon edge rms roughness (description embodiment) | 1 nm | C |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 3 nm | — |
aliphatic hydrocarbons
aromatic hydrocarbons
graphene nanoribbon edge rms roughness (description embodiment) |
| 3 nm |
C |
graphene nanoribbon edge rms roughness (description embodiment) | 1 nm | C |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 1 mm | — |
Thickness | ≥ 10 mm | — |
Thickness | ≥ 10 nm | — |
Thickness | ≥ 5 nm | — |
Thickness | ≥ 3 nm | — |