Patent
US 9,863,039MoS₂ Thin Film and Method for Manufacturing Same
Yo-Sep MIN
US
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Patent
Atlas literature
Patent
US 9,863,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-19. Canceled
Canceled
A MoS₂ thin film which is formed from a molybdenum precursor and a sulfur precursor and grown by an atomic layer deposition method, wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide. Currently amended
The MoS₂ thin film according to claim 20, wherein the Raman spectrum of the MoS₂ thin film has peaks observed at 375-385 cm⁻¹ and 400-410 cm⁻¹. Previously presented
The MoS₂ thin film according to claim 20, wherein the MoS₂ thin film is comprised in any one selected from a group consisting of a semiconductor active layer of a transistor, a catalyst for hydrogen evolution reaction and an electrode of a lithium-ion battery. Previously presented
The MoS₂ thin film according to claim 20, wherein the ALD temperature window of the atomic layer deposition method is 100-120 °C. New
2 1-22. Canceled
Canceled
25-26. Canceled
Canceled
A method [[of]] for manufacturing a MoS₂ thin film f, the method comprising: 1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state; 2) removing an excess molybdenum precursor that has not formed the chemical functional group layer comprising Mo and a byproduct by supplying an inert gas into the reactor after 1); 3) forming a MoS₂ atomic layer by chemically adsorbing a sulfur precursor on the chemical functional group layer comprising Mo by supplying the sulfur precursor into the reactor; and 4) removing a sulfur precursor that has not been adsorbed in 3) and a byproduct by supplying an inert gas into the reactor after 3); wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide, and wherein the chemical adsorption of the sulfur precursor on the chemical functional group layer containing Mo in 3) is accomplished by atomic layer deposition (ALD) at a temperature of 100-120 °C. Currently amended
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 1), the molybdenum precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 3), the sulfur precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising repeating 1) through 4). Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising a heat treatment after 4). Previously presented
28-31. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
transistor with MoS₂ semiconductor active layer
hydrogen evolution reaction catalyst
lithium-ion battery electrode
Materials described outside the worked examples.
MoS₂ thin film
MoS₂
molybdenum hexacarbonyl
Mo(CO)6
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2g mode peak range | 375–385 cm⁻¹ | MoS₂ |
Raman A1g mode peak range | 400–410 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
MONATOMIC METAL-DOPED FEW-LAYER MOLYBDENUM DISULFIDE ELECTROCATALYTIC MATERIAL, PREPARING METHOD THEREOF, AND METHOD FOR ELECTROCATALYTIC NITROGEN FIXATION
ROBUST MoS2/GRAPHENE COMPOSITE PAPER BASED ELECTRODES FOR NA+ BATTERY APPLICATIONS
Patent
Atlas literature
Patent
US 9,863,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-19. Canceled
Canceled
A MoS₂ thin film which is formed from a molybdenum precursor and a sulfur precursor and grown by an atomic layer deposition method, wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide. Currently amended
The MoS₂ thin film according to claim 20, wherein the Raman spectrum of the MoS₂ thin film has peaks observed at 375-385 cm⁻¹ and 400-410 cm⁻¹. Previously presented
The MoS₂ thin film according to claim 20, wherein the MoS₂ thin film is comprised in any one selected from a group consisting of a semiconductor active layer of a transistor, a catalyst for hydrogen evolution reaction and an electrode of a lithium-ion battery. Previously presented
The MoS₂ thin film according to claim 20, wherein the ALD temperature window of the atomic layer deposition method is 100-120 °C. New
2 1-22. Canceled
Canceled
25-26. Canceled
Canceled
A method [[of]] for manufacturing a MoS₂ thin film f, the method comprising: 1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state; 2) removing an excess molybdenum precursor that has not formed the chemical functional group layer comprising Mo and a byproduct by supplying an inert gas into the reactor after 1); 3) forming a MoS₂ atomic layer by chemically adsorbing a sulfur precursor on the chemical functional group layer comprising Mo by supplying the sulfur precursor into the reactor; and 4) removing a sulfur precursor that has not been adsorbed in 3) and a byproduct by supplying an inert gas into the reactor after 3); wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide, and wherein the chemical adsorption of the sulfur precursor on the chemical functional group layer containing Mo in 3) is accomplished by atomic layer deposition (ALD) at a temperature of 100-120 °C. Currently amended
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 1), the molybdenum precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 3), the sulfur precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising repeating 1) through 4). Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising a heat treatment after 4). Previously presented
28-31. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
transistor with MoS₂ semiconductor active layer
hydrogen evolution reaction catalyst
lithium-ion battery electrode
Materials described outside the worked examples.
MoS₂ thin film
MoS₂
molybdenum hexacarbonyl
Mo(CO)6
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2g mode peak range | 375–385 cm⁻¹ | MoS₂ |
Raman A1g mode peak range | 400–410 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
MONATOMIC METAL-DOPED FEW-LAYER MOLYBDENUM DISULFIDE ELECTROCATALYTIC MATERIAL, PREPARING METHOD THEREOF, AND METHOD FOR ELECTROCATALYTIC NITROGEN FIXATION
ROBUST MoS2/GRAPHENE COMPOSITE PAPER BASED ELECTRODES FOR NA+ BATTERY APPLICATIONS
Patent
Atlas literature
Patent
US 9,863,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-19. Canceled
Canceled
A MoS₂ thin film which is formed from a molybdenum precursor and a sulfur precursor and grown by an atomic layer deposition method, wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide. Currently amended
The MoS₂ thin film according to claim 20, wherein the Raman spectrum of the MoS₂ thin film has peaks observed at 375-385 cm⁻¹ and 400-410 cm⁻¹. Previously presented
The MoS₂ thin film according to claim 20, wherein the MoS₂ thin film is comprised in any one selected from a group consisting of a semiconductor active layer of a transistor, a catalyst for hydrogen evolution reaction and an electrode of a lithium-ion battery. Previously presented
The MoS₂ thin film according to claim 20, wherein the ALD temperature window of the atomic layer deposition method is 100-120 °C. New
2 1-22. Canceled
Canceled
25-26. Canceled
Canceled
A method [[of]] for manufacturing a MoS₂ thin film f, the method comprising: 1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state; 2) removing an excess molybdenum precursor that has not formed the chemical functional group layer comprising Mo and a byproduct by supplying an inert gas into the reactor after 1); 3) forming a MoS₂ atomic layer by chemically adsorbing a sulfur precursor on the chemical functional group layer comprising Mo by supplying the sulfur precursor into the reactor; and 4) removing a sulfur precursor that has not been adsorbed in 3) and a byproduct by supplying an inert gas into the reactor after 3); wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide, and wherein the chemical adsorption of the sulfur precursor on the chemical functional group layer containing Mo in 3) is accomplished by atomic layer deposition (ALD) at a temperature of 100-120 °C. Currently amended
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 1), the molybdenum precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 3), the sulfur precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising repeating 1) through 4). Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising a heat treatment after 4). Previously presented
28-31. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
transistor with MoS₂ semiconductor active layer
hydrogen evolution reaction catalyst
lithium-ion battery electrode
Materials described outside the worked examples.
MoS₂ thin film
MoS₂
molybdenum hexacarbonyl
Mo(CO)6
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2g mode peak range | 375–385 cm⁻¹ | MoS₂ |
Raman A1g mode peak range | 400–410 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
MONATOMIC METAL-DOPED FEW-LAYER MOLYBDENUM DISULFIDE ELECTROCATALYTIC MATERIAL, PREPARING METHOD THEREOF, AND METHOD FOR ELECTROCATALYTIC NITROGEN FIXATION
ROBUST MoS2/GRAPHENE COMPOSITE PAPER BASED ELECTRODES FOR NA+ BATTERY APPLICATIONS
Patent
Atlas literature
Patent
US 9,863,039Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-19. Canceled
Canceled
A MoS₂ thin film which is formed from a molybdenum precursor and a sulfur precursor and grown by an atomic layer deposition method, wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide. Currently amended
The MoS₂ thin film according to claim 20, wherein the Raman spectrum of the MoS₂ thin film has peaks observed at 375-385 cm⁻¹ and 400-410 cm⁻¹. Previously presented
The MoS₂ thin film according to claim 20, wherein the MoS₂ thin film is comprised in any one selected from a group consisting of a semiconductor active layer of a transistor, a catalyst for hydrogen evolution reaction and an electrode of a lithium-ion battery. Previously presented
The MoS₂ thin film according to claim 20, wherein the ALD temperature window of the atomic layer deposition method is 100-120 °C. New
2 1-22. Canceled
Canceled
25-26. Canceled
Canceled
A method [[of]] for manufacturing a MoS₂ thin film f, the method comprising: 1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state; 2) removing an excess molybdenum precursor that has not formed the chemical functional group layer comprising Mo and a byproduct by supplying an inert gas into the reactor after 1); 3) forming a MoS₂ atomic layer by chemically adsorbing a sulfur precursor on the chemical functional group layer comprising Mo by supplying the sulfur precursor into the reactor; and 4) removing a sulfur precursor that has not been adsorbed in 3) and a byproduct by supplying an inert gas into the reactor after 3); wherein the molybdenum precursor is M o (CO)6 and the sulfur precursor is dimethyl disulfide, and wherein the chemical adsorption of the sulfur precursor on the chemical functional group layer containing Mo in 3) is accomplished by atomic layer deposition (ALD) at a temperature of 100-120 °C. Currently amended
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 1), the molybdenum precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, wherein, in 3), the sulfur precursor is supplied at a pressure of 0.1-10 Torr. Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising repeating 1) through 4). Previously presented
The method for manufacturing a MoS₂ thin film according to claim 27, further comprising a heat treatment after 4). Previously presented
28-31. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
transistor with MoS₂ semiconductor active layer
hydrogen evolution reaction catalyst
lithium-ion battery electrode
Materials described outside the worked examples.
MoS₂ thin film
MoS₂
molybdenum hexacarbonyl
Mo(CO)6
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Raman E2g mode peak range | 375–385 cm⁻¹ | MoS₂ |
Raman A1g mode peak range | 400–410 cm⁻¹ |
Related documents with shared materials, methods, properties, or citations.
MONATOMIC METAL-DOPED FEW-LAYER MOLYBDENUM DISULFIDE ELECTROCATALYTIC MATERIAL, PREPARING METHOD THEREOF, AND METHOD FOR ELECTROCATALYTIC NITROGEN FIXATION
ROBUST MoS2/GRAPHENE COMPOSITE PAPER BASED ELECTRODES FOR NA+ BATTERY APPLICATIONS
dimethyl disulfide
CH₃SSCH₃
ALD temperature window for MoS2 deposition using Mo(CO)6 and dimethyl disulfide | 100–120 °C | MoS₂ |
Thickness | 375–385 cm | — |
Thickness | 400–410 cm | — |
Pressure | 0.1–10 Torr | — |
Temperature | 400–1000 °C | — |
dimethyl disulfide
CH₃SSCH₃
ALD temperature window for MoS2 deposition using Mo(CO)6 and dimethyl disulfide | 100–120 °C | MoS₂ |
Thickness | 375–385 cm | — |
Thickness | 400–410 cm | — |
Pressure | 0.1–10 Torr | — |
Temperature | 400–1000 °C | — |
dimethyl disulfide
CH₃SSCH₃
ALD temperature window for MoS2 deposition using Mo(CO)6 and dimethyl disulfide | 100–120 °C | MoS₂ |
Thickness | 375–385 cm | — |
Thickness | 400–410 cm | — |
Pressure | 0.1–10 Torr | — |
Temperature | 400–1000 °C | — |
dimethyl disulfide
CH₃SSCH₃
ALD temperature window for MoS2 deposition using Mo(CO)6 and dimethyl disulfide | 100–120 °C | MoS₂ |
Thickness | 375–385 cm | — |
Thickness | 400–410 cm | — |
Pressure | 0.1–10 Torr | — |
Temperature | 400–1000 °C | — |