Patent
US 8,637,346METHOD FOR MANUFACTURING GRAPHENE NANO ARRAY AND FIELD-EFFECT TRANSISTOR INCLUDING THE SAME
Gun Young JUNG
US
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Patent
Atlas literature
Patent
US 8,637,346Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene nano array, comprising: preparing a substrate having a graphene sheet disposed thereon; 5 sequentially forming a protective layer, a sacrificial layer and a resist layer on the graphene sheet; forming a hole pattern in a surface of the resist layer; etching the sacrificial layer and the protective layer along the hole pattern to form a trench such that a portion of the protective layer adjacent to the graphene sheet remains; 10 forming a metal layer of a nanocup pattern along a sidewall of the trench while rotating the trench; removing a lower surface of the metal layer to form a metal layer in a nanotube pattern; removing the resist layer and the sacrificial layer; 15 etching the protective layer and the graphene sheet adjacent to the protective layer along the nanotube pattern; and removing the protective layer and the metal layer to form a graphene nano array.
The method according to claim 1, wherein the graphene nano array comprises a 20 plurality of graphene nanorings arranged therein.
The method according to claim 1, wherein the protective layer is soluble in water and insoluble in a solvent for the sacrificial layer.
4. The method according to claim 1, wherein the protective layer is a PVA layer and the sacrificial layer is a PMMA layer.
13 6. The method according to claim 1, wherein the remaining protective layer has a thickness of 30 nm to 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with graphene nanoring channels
Materials described outside the worked examples.
graphene sheet
protective layer
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
protective layer thickness (total) | 100–200 nm | polyvinyl alcohol (PVA) |
sacrificial layer thickness | 200–400 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,637,346Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene nano array, comprising: preparing a substrate having a graphene sheet disposed thereon; 5 sequentially forming a protective layer, a sacrificial layer and a resist layer on the graphene sheet; forming a hole pattern in a surface of the resist layer; etching the sacrificial layer and the protective layer along the hole pattern to form a trench such that a portion of the protective layer adjacent to the graphene sheet remains; 10 forming a metal layer of a nanocup pattern along a sidewall of the trench while rotating the trench; removing a lower surface of the metal layer to form a metal layer in a nanotube pattern; removing the resist layer and the sacrificial layer; 15 etching the protective layer and the graphene sheet adjacent to the protective layer along the nanotube pattern; and removing the protective layer and the metal layer to form a graphene nano array.
The method according to claim 1, wherein the graphene nano array comprises a 20 plurality of graphene nanorings arranged therein.
The method according to claim 1, wherein the protective layer is soluble in water and insoluble in a solvent for the sacrificial layer.
4. The method according to claim 1, wherein the protective layer is a PVA layer and the sacrificial layer is a PMMA layer.
13 6. The method according to claim 1, wherein the remaining protective layer has a thickness of 30 nm to 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with graphene nanoring channels
Materials described outside the worked examples.
graphene sheet
protective layer
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
protective layer thickness (total) | 100–200 nm | polyvinyl alcohol (PVA) |
sacrificial layer thickness | 200–400 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,637,346Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene nano array, comprising: preparing a substrate having a graphene sheet disposed thereon; 5 sequentially forming a protective layer, a sacrificial layer and a resist layer on the graphene sheet; forming a hole pattern in a surface of the resist layer; etching the sacrificial layer and the protective layer along the hole pattern to form a trench such that a portion of the protective layer adjacent to the graphene sheet remains; 10 forming a metal layer of a nanocup pattern along a sidewall of the trench while rotating the trench; removing a lower surface of the metal layer to form a metal layer in a nanotube pattern; removing the resist layer and the sacrificial layer; 15 etching the protective layer and the graphene sheet adjacent to the protective layer along the nanotube pattern; and removing the protective layer and the metal layer to form a graphene nano array.
The method according to claim 1, wherein the graphene nano array comprises a 20 plurality of graphene nanorings arranged therein.
The method according to claim 1, wherein the protective layer is soluble in water and insoluble in a solvent for the sacrificial layer.
4. The method according to claim 1, wherein the protective layer is a PVA layer and the sacrificial layer is a PMMA layer.
13 6. The method according to claim 1, wherein the remaining protective layer has a thickness of 30 nm to 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with graphene nanoring channels
Materials described outside the worked examples.
graphene sheet
protective layer
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
protective layer thickness (total) | 100–200 nm | polyvinyl alcohol (PVA) |
sacrificial layer thickness | 200–400 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,637,346Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene nano array, comprising: preparing a substrate having a graphene sheet disposed thereon; 5 sequentially forming a protective layer, a sacrificial layer and a resist layer on the graphene sheet; forming a hole pattern in a surface of the resist layer; etching the sacrificial layer and the protective layer along the hole pattern to form a trench such that a portion of the protective layer adjacent to the graphene sheet remains; 10 forming a metal layer of a nanocup pattern along a sidewall of the trench while rotating the trench; removing a lower surface of the metal layer to form a metal layer in a nanotube pattern; removing the resist layer and the sacrificial layer; 15 etching the protective layer and the graphene sheet adjacent to the protective layer along the nanotube pattern; and removing the protective layer and the metal layer to form a graphene nano array.
The method according to claim 1, wherein the graphene nano array comprises a 20 plurality of graphene nanorings arranged therein.
The method according to claim 1, wherein the protective layer is soluble in water and insoluble in a solvent for the sacrificial layer.
4. The method according to claim 1, wherein the protective layer is a PVA layer and the sacrificial layer is a PMMA layer.
13 6. The method according to claim 1, wherein the remaining protective layer has a thickness of 30 nm to 50 nm.
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with graphene nanoring channels
Materials described outside the worked examples.
graphene sheet
protective layer
sacrificial layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
protective layer thickness (total) | 100–200 nm | polyvinyl alcohol (PVA) |
sacrificial layer thickness | 200–400 nm |
Related documents with shared materials, methods, properties, or citations.
resist layer
metal layer
graphene nanorings
PVA layer
PMMA layer
polyvinyl alcohol (PVA)
polymethyl methacrylate (PMMA)
SU-8
polydimethylsiloxane (PDMS)
Si substrate with SiO₂ layer
graphene nanoring channels
resist layer thickness | 10–100 nm | resist layer |
remaining protective layer thickness (claimed range) | 30–50 nm | protective layer |
graphene optical transmittance (background) | ≥ 90 % | graphene sheet |
Pressure | 0–6 Torr | — |
Method of transferring a graphene film
resist layer
metal layer
graphene nanorings
PVA layer
PMMA layer
polyvinyl alcohol (PVA)
polymethyl methacrylate (PMMA)
SU-8
polydimethylsiloxane (PDMS)
Si substrate with SiO₂ layer
graphene nanoring channels
resist layer thickness | 10–100 nm | resist layer |
remaining protective layer thickness (claimed range) | 30–50 nm | protective layer |
graphene optical transmittance (background) | ≥ 90 % | graphene sheet |
Pressure | 0–6 Torr | — |
Method of transferring a graphene film
resist layer
metal layer
graphene nanorings
PVA layer
PMMA layer
polyvinyl alcohol (PVA)
polymethyl methacrylate (PMMA)
SU-8
polydimethylsiloxane (PDMS)
Si substrate with SiO₂ layer
graphene nanoring channels
resist layer thickness | 10–100 nm | resist layer |
remaining protective layer thickness (claimed range) | 30–50 nm | protective layer |
graphene optical transmittance (background) | ≥ 90 % | graphene sheet |
Pressure | 0–6 Torr | — |
Method of transferring a graphene film
resist layer
metal layer
graphene nanorings
PVA layer
PMMA layer
polyvinyl alcohol (PVA)
polymethyl methacrylate (PMMA)
SU-8
polydimethylsiloxane (PDMS)
Si substrate with SiO₂ layer
graphene nanoring channels
resist layer thickness | 10–100 nm | resist layer |
remaining protective layer thickness (claimed range) | 30–50 nm | protective layer |
graphene optical transmittance (background) | ≥ 90 % | graphene sheet |
Pressure | 0–6 Torr | — |
Method of transferring a graphene film