Patent
US 10,461,492METHOD FOR SYNTHESIS OF GRAPHENE ALONG WAVEGUIDES IN SITU, PHOTONICS DEVICE INCLUDING GRAPHENE OBTAINED USING THE METHOD
Yong-Won SONG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,461,492Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a diagram showing polycrystalline nickel (Ni) deposition on a flat surface of a waveguide, and
FIG. 2A is a diagram showing in situ laser induced synthesis of graphene on a flat surface of a waveguide, and
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
FIGS. 4A to 4F are graphs and images showing the properties of graphene synthesized according to the present disclosure.
FIG. 5.
FIGS. 6A to 6D show spectrum results of signals modulated in the ultrafast optical switching device of
FIGS. 7A and 7B are graphs showing the properties of signals generated in
FIG. 8 is a configuration diagram of an ultrafast optical switching device based on graphene synthesized in situ according to another embodiment of the present …
FIGS. 9A to 9 C are graphs showing the properties of signals generated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for in situ synthesis of graphene along a lengthwise direction of a waveguide applied to a photonic device, the method comprising: processing an evanescent field of laser propagating in the waveguide to spread outward the waveguide; depositing a nickel thin film on a surface of the waveguide; growing graphene between the surface of the waveguide and the nickel thin film by irradiating telecommunication laser to a core of the waveguide; and removing the nickel thin film from the waveguide, wherein the method further comprises, when an optical fiber is the waveguide, reducing a thickness of the optical fiber through heating a target part of the optical fiber and pulling two sides to make a tapered optical fiber, to allow for interaction of the evanescent field with the nickel thin film. Currently amended
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the waveguide, polishing cladding of the optical fiber along the lengthwise direction, to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the optical waveguide, removing cladding of the optical fiber through etching of a target part of the optical fiber to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when a planar waveguide is the waveguide, allowing for interaction of the evanescent field with the nickel thin film on a target side surface of the planar waveguide. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene uses continuous wave (CW) laser as a heating source. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene comprises irradiating the telecommunication laser to the optical fiber at the output of -30 dBm to 30 dBm for 1 second to 100 minutes. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed under a general atmospheric environment. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed at temperature of 100 ° C or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the grown graphene is multilayer graphene of 20 layers or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the nickel thin film is 1 to 1000 nm in thickness. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the removing of the nickel thin film uses metal etching. Original
A photonic device including graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical pulse generation device using, for a saturable absorber, graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical switching device using optical nonlinearity of graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tapered optical fiber with in situ graphene
planar waveguide with in situ graphene
photonic device with in situ graphene
Materials described outside the worked examples.
graphene
nickel thin film
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–6000 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,461,492Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a diagram showing polycrystalline nickel (Ni) deposition on a flat surface of a waveguide, and
FIG. 2A is a diagram showing in situ laser induced synthesis of graphene on a flat surface of a waveguide, and
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
FIGS. 4A to 4F are graphs and images showing the properties of graphene synthesized according to the present disclosure.
FIG. 5.
FIGS. 6A to 6D show spectrum results of signals modulated in the ultrafast optical switching device of
FIGS. 7A and 7B are graphs showing the properties of signals generated in
FIG. 8 is a configuration diagram of an ultrafast optical switching device based on graphene synthesized in situ according to another embodiment of the present …
FIGS. 9A to 9 C are graphs showing the properties of signals generated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for in situ synthesis of graphene along a lengthwise direction of a waveguide applied to a photonic device, the method comprising: processing an evanescent field of laser propagating in the waveguide to spread outward the waveguide; depositing a nickel thin film on a surface of the waveguide; growing graphene between the surface of the waveguide and the nickel thin film by irradiating telecommunication laser to a core of the waveguide; and removing the nickel thin film from the waveguide, wherein the method further comprises, when an optical fiber is the waveguide, reducing a thickness of the optical fiber through heating a target part of the optical fiber and pulling two sides to make a tapered optical fiber, to allow for interaction of the evanescent field with the nickel thin film. Currently amended
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the waveguide, polishing cladding of the optical fiber along the lengthwise direction, to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the optical waveguide, removing cladding of the optical fiber through etching of a target part of the optical fiber to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when a planar waveguide is the waveguide, allowing for interaction of the evanescent field with the nickel thin film on a target side surface of the planar waveguide. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene uses continuous wave (CW) laser as a heating source. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene comprises irradiating the telecommunication laser to the optical fiber at the output of -30 dBm to 30 dBm for 1 second to 100 minutes. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed under a general atmospheric environment. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed at temperature of 100 ° C or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the grown graphene is multilayer graphene of 20 layers or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the nickel thin film is 1 to 1000 nm in thickness. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the removing of the nickel thin film uses metal etching. Original
A photonic device including graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical pulse generation device using, for a saturable absorber, graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical switching device using optical nonlinearity of graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tapered optical fiber with in situ graphene
planar waveguide with in situ graphene
photonic device with in situ graphene
Materials described outside the worked examples.
graphene
nickel thin film
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–6000 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,461,492Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a diagram showing polycrystalline nickel (Ni) deposition on a flat surface of a waveguide, and
FIG. 2A is a diagram showing in situ laser induced synthesis of graphene on a flat surface of a waveguide, and
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
FIGS. 4A to 4F are graphs and images showing the properties of graphene synthesized according to the present disclosure.
FIG. 5.
FIGS. 6A to 6D show spectrum results of signals modulated in the ultrafast optical switching device of
FIGS. 7A and 7B are graphs showing the properties of signals generated in
FIG. 8 is a configuration diagram of an ultrafast optical switching device based on graphene synthesized in situ according to another embodiment of the present …
FIGS. 9A to 9 C are graphs showing the properties of signals generated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for in situ synthesis of graphene along a lengthwise direction of a waveguide applied to a photonic device, the method comprising: processing an evanescent field of laser propagating in the waveguide to spread outward the waveguide; depositing a nickel thin film on a surface of the waveguide; growing graphene between the surface of the waveguide and the nickel thin film by irradiating telecommunication laser to a core of the waveguide; and removing the nickel thin film from the waveguide, wherein the method further comprises, when an optical fiber is the waveguide, reducing a thickness of the optical fiber through heating a target part of the optical fiber and pulling two sides to make a tapered optical fiber, to allow for interaction of the evanescent field with the nickel thin film. Currently amended
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the waveguide, polishing cladding of the optical fiber along the lengthwise direction, to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the optical waveguide, removing cladding of the optical fiber through etching of a target part of the optical fiber to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when a planar waveguide is the waveguide, allowing for interaction of the evanescent field with the nickel thin film on a target side surface of the planar waveguide. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene uses continuous wave (CW) laser as a heating source. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene comprises irradiating the telecommunication laser to the optical fiber at the output of -30 dBm to 30 dBm for 1 second to 100 minutes. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed under a general atmospheric environment. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed at temperature of 100 ° C or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the grown graphene is multilayer graphene of 20 layers or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the nickel thin film is 1 to 1000 nm in thickness. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the removing of the nickel thin film uses metal etching. Original
A photonic device including graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical pulse generation device using, for a saturable absorber, graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical switching device using optical nonlinearity of graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tapered optical fiber with in situ graphene
planar waveguide with in situ graphene
photonic device with in situ graphene
Materials described outside the worked examples.
graphene
nickel thin film
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–6000 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,461,492Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a diagram showing polycrystalline nickel (Ni) deposition on a flat surface of a waveguide, and
FIG. 2A is a diagram showing in situ laser induced synthesis of graphene on a flat surface of a waveguide, and
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
FIGS. 4A to 4F are graphs and images showing the properties of graphene synthesized according to the present disclosure.
FIG. 5.
FIGS. 6A to 6D show spectrum results of signals modulated in the ultrafast optical switching device of
FIGS. 7A and 7B are graphs showing the properties of signals generated in
FIG. 8 is a configuration diagram of an ultrafast optical switching device based on graphene synthesized in situ according to another embodiment of the present …
FIGS. 9A to 9 C are graphs showing the properties of signals generated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for in situ synthesis of graphene along a lengthwise direction of a waveguide applied to a photonic device, the method comprising: processing an evanescent field of laser propagating in the waveguide to spread outward the waveguide; depositing a nickel thin film on a surface of the waveguide; growing graphene between the surface of the waveguide and the nickel thin film by irradiating telecommunication laser to a core of the waveguide; and removing the nickel thin film from the waveguide, wherein the method further comprises, when an optical fiber is the waveguide, reducing a thickness of the optical fiber through heating a target part of the optical fiber and pulling two sides to make a tapered optical fiber, to allow for interaction of the evanescent field with the nickel thin film. Currently amended
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the waveguide, polishing cladding of the optical fiber along the lengthwise direction, to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when an optical fiber is the optical waveguide, removing cladding of the optical fiber through etching of a target part of the optical fiber to induce the evanescent field of the laser outward the optical fiber, to allow for interaction with the nickel thin film. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the method for synthesis of graphene comprises, when a planar waveguide is the waveguide, allowing for interaction of the evanescent field with the nickel thin film on a target side surface of the planar waveguide. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene uses continuous wave (CW) laser as a heating source. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene comprises irradiating the telecommunication laser to the optical fiber at the output of -30 dBm to 30 dBm for 1 second to 100 minutes. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed under a general atmospheric environment. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the growing of graphene is performed at temperature of 100 ° C or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the grown graphene is multilayer graphene of 20 layers or less. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the nickel thin film is 1 to 1000 nm in thickness. Original
The method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1, wherein the removing of the nickel thin film uses metal etching. Original
A photonic device including graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical pulse generation device using, for a saturable absorber, graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
An ultrafast optical switching device using optical nonlinearity of graphene obtained in situ by the method for in situ synthesis of graphene along a lengthwise direction of a waveguide according to claim 1. Withdrawn
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
tapered optical fiber with in situ graphene
planar waveguide with in situ graphene
photonic device with in situ graphene
Materials described outside the worked examples.
graphene
nickel thin film
Ni
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A is a diagram showing a four-wave mixing (FWM) effect using graphene synthesized on a D-shaped optical fiber, and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–6000 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
ultrafast optical pulse generation device (femtosecond laser)
ultrafast optical switching device
| — |
Thickness | 0–1.9 nm | — |
Thickness | 1–1000 nm | — |
Pressure | 0–6 Torr | — |
Thickness | 10–1000 nm | — |
ultrafast optical pulse generation device (femtosecond laser)
ultrafast optical switching device
| — |
Thickness | 0–1.9 nm | — |
Thickness | 1–1000 nm | — |
Pressure | 0–6 Torr | — |
Thickness | 10–1000 nm | — |
ultrafast optical pulse generation device (femtosecond laser)
ultrafast optical switching device
| — |
Thickness | 0–1.9 nm | — |
Thickness | 1–1000 nm | — |
Pressure | 0–6 Torr | — |
Thickness | 10–1000 nm | — |
ultrafast optical pulse generation device (femtosecond laser)
ultrafast optical switching device
| — |
Thickness | 0–1.9 nm | — |
Thickness | 1–1000 nm | — |
Pressure | 0–6 Torr | — |
Thickness | 10–1000 nm | — |