Patent
US 10,755,866Graphene-Semiconductor Based Wavelength Selective Photodetector for Sub-Bandgap Photo Detection
Jinyao Tang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,755,866Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows images of a possible process flow for fabricating a photodetector device according to an embodiment of the subject invention, in which
Figure 2 is an overview of the device according to the subject invention and the concepts upon which it is designed, in which
Figure 3 shows a photo response of AgC l/graphene device according to an embodiment of the subject invention on transparent substrates, in which
Figure 4 is a wavelength-resolved photo response, in which
Figure 5 is a FDTD simulation for a wavelength selective enhancement, in which
Figure 6 shows a plot of the responsivity versus wavelength for AgL/graphene and AgB r/graphene.
Figure 7 shows an AgC l -graphene photodetector and temporal photoresponse, in which 25
Figure 8 shows the spectral selectivity modulation characteristics of an embodiment of the subject invention, in which
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a supporting medium; a layer of graphene on the supporting medium; and a layer of semiconductor nanoparticles in direct, physical contact with the layer of graphen e, wherein the semiconductor nanopar t icles are semiconductors with ba n dgaps larger than the energy of photons intended to be detected by the photodetector, and wherein the semiconductor na n oparticles are silver halide nanoparticles. Currently amended
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is on the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is under the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is mixed in with the layer of graphene. Original
The photodetector of claim 1, wherein the graphene is chemical vapor deposition grown, liquid exfoliated, or mechanically exfoliated. Original
The photodetector of claim 1, wherein the diameter of the semiconductor nanoparticles is from the nanometer range to the micrometer range. Original
T he photodetector o claim 1, wherein the semiconductor nanoparticles are Ag Ci nanoparticles, with Eg = 3.25 eV, which detect photons with energy of less than 3.25 eV. Currently amended
The photodetector o claim 1, wherein the semiconductor nanoparticles are sensitized by organic or inorganic dyes so as to modulate their properties. Currently amended
The photodetector of claim 1, wherein the supporting medium is one or more of quartz, thermal oxidized Si, sapphire, silicon carbide, aluminum nitride, polydimethylsiloxane, and a flexible plastic substrate. Original
The photodetector of claim 1, wherein the thickness of the supporting medium is modulated to achieve selective enhancement of photodetection. Currently amended
A method of performing flexible and transparent optoelectronics for imaging, spectroscopy, sensing, or optical communications, the method comprising: providing a photodetector according to claim 1; and using the photodetector to detect photons having an energy smaller than the bandgaps of the semiconductor nanoparticles. Currently amended
Canceled
Canceled
A method of manufacturing a graphene semiconductor photodetector, the method comprising: providing a monolayer chemical vapor deposition ("CVD") graphene on a metal; spin-coating a poly(meth y l methacrylate) (PMMA) solution in aniso le onto the graphene layer and air drying it; removing the metal on the reverse side of the graphene by etching; separating the released graphene on PMMA film and rinsing the film consecutively in a plurality of clean deionized ("DI") water baths; placing the film onto a clean substrate and air drying it; dissolving the PMMA with a solvent; patterning the graphene into a ribbon with e-beam lithography and oxygen; depositing silver (Ag) in a thermal evaporator on the e-bea m lithography in a defined central area of the graphene ribbon; transfo rm ing the Ag into one of AgC l, AgBr, and Ag i by a reaction with C 1 2, Br 2, or I 2, respectively; after the transformation of the Ag, coating A 12O 3 by atomic layer deposition (ALD) onto the structure; removing the A 12O 3 on the contact area by dipping it in a buffered HF solution (BHF), and patterning a nickel (Ni) electrode on the graphene ribbon with e-beam lithography followed by metal sputtering; and cleaning the PMMA. Withdrawn
The method of claim 15 wherein the step of spin-coating is carried out at 4,000 rpm for 1 minute with a 7 wt. % PMMA solution. Withdrawn
The method of claim 15 wherein the step of removing the metal on the reverse side of the graphene by etching is carried out with an oxygen reactive ion etching (RI E) for 2 minutes and then etching overnight in 0.1 M (N I 1 4) 2 S 2 0 8 aqueous solution. Withdrawn
The method of claim 15 wherein the substrate upon which the film is placed is one or more of a clean silicon substrate w ith 470 nm or 200 nm thermal oxide, quartz, or polyethylene terephthalate (PET) film. Withdrawn
The method of claim 15, wherein the Ag is deposited to a thickness of at least 0.5 nm. Withdrawn
The method of claim 15, wherein the step of dissolving PMMA is carried out with a mixture of dichloroethene and acetone. Withdrawn
The method of claim 15, wherein the step of transforming the Ag comprises transforming the Ag into AgC I by a reaction with C 1 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KCl O 3; adding an HCl solution to the solid so the C l 2 is generated in-situ (KC 10 3 + 6 HC l = KC l + 5 SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.1.svg 0.16 1.19 Black and white allowing it to react with evaporated Ag nanoparticles. Withdrawn
The method of claim 15, wherein the step of transfo rm ing the Ag comprises transforming the Ag into AgBr by a reaction with Br 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KBr; adding solid KMn O 4 and H 2 S O 4 mixture solution to the solid so a Br 2 vapor is produced by SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.2.svg 0.16 6.01 Black and white allowing it to react with Ag nanoparti c le. Withdrawn
The method of claim 15 wherein the step of trans fo rming the Ag comprises transforming the Ag into Ag I by a reaction with I₂ via the following steps: placing a sample substrate in a sealed vial containing I 2 solid; and heating th e reaction vial to allow the I 2 vapor to react with Ag nanoparticle. Withdrawn
The method of claim 15, wherein the step of coating A 1 2 0 3 comprises utilizing trimethylaluminum as a precursor. Withdrawn
The method of claim 15, wherein the metal is copper, wherein the solvent is acetone, and wherein cleaning the PMMA comprises cleaning the PMMA with a mixture of di chl oroethene and acetone. Withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials
AgCl/graphene photodetector fabricated on a quartz substrate and measured with a supercontinuum laser to explore wavelength-dependent photo response. Photon-to-current efficiency was measured and analyzed using Fowler theory. A flexible visible photodetector was also fabricated on PET film with ~92.8% transmittance recorded under natural direct sunlight illumination.
4 materials
Wavelength-resolved photo response of AgCl/graphene photodetector on thermal oxide (200 nm and 470 nm SiO₂). The spectral response was selectively enhanced by modulating SiO₂ thickness, creating a color-sensitive photodetector. Experimental photo response peaks matched FDTD simulation absorption peaks. AgBr/graphene and AgI/graphene responsivity versus wavelength were also measured (Eg(AgBr)=2.69 eV, Eg(AgI)=2.83 eV).
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor photodetector
Materials described outside the worked examples.
silver halide nanoparticles
silver (Ag)
Ag
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AgCl bandgap | 3.25 eV | AgCl |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,755,866Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows images of a possible process flow for fabricating a photodetector device according to an embodiment of the subject invention, in which
Figure 2 is an overview of the device according to the subject invention and the concepts upon which it is designed, in which
Figure 3 shows a photo response of AgC l/graphene device according to an embodiment of the subject invention on transparent substrates, in which
Figure 4 is a wavelength-resolved photo response, in which
Figure 5 is a FDTD simulation for a wavelength selective enhancement, in which
Figure 6 shows a plot of the responsivity versus wavelength for AgL/graphene and AgB r/graphene.
Figure 7 shows an AgC l -graphene photodetector and temporal photoresponse, in which 25
Figure 8 shows the spectral selectivity modulation characteristics of an embodiment of the subject invention, in which
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a supporting medium; a layer of graphene on the supporting medium; and a layer of semiconductor nanoparticles in direct, physical contact with the layer of graphen e, wherein the semiconductor nanopar t icles are semiconductors with ba n dgaps larger than the energy of photons intended to be detected by the photodetector, and wherein the semiconductor na n oparticles are silver halide nanoparticles. Currently amended
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is on the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is under the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is mixed in with the layer of graphene. Original
The photodetector of claim 1, wherein the graphene is chemical vapor deposition grown, liquid exfoliated, or mechanically exfoliated. Original
The photodetector of claim 1, wherein the diameter of the semiconductor nanoparticles is from the nanometer range to the micrometer range. Original
T he photodetector o claim 1, wherein the semiconductor nanoparticles are Ag Ci nanoparticles, with Eg = 3.25 eV, which detect photons with energy of less than 3.25 eV. Currently amended
The photodetector o claim 1, wherein the semiconductor nanoparticles are sensitized by organic or inorganic dyes so as to modulate their properties. Currently amended
The photodetector of claim 1, wherein the supporting medium is one or more of quartz, thermal oxidized Si, sapphire, silicon carbide, aluminum nitride, polydimethylsiloxane, and a flexible plastic substrate. Original
The photodetector of claim 1, wherein the thickness of the supporting medium is modulated to achieve selective enhancement of photodetection. Currently amended
A method of performing flexible and transparent optoelectronics for imaging, spectroscopy, sensing, or optical communications, the method comprising: providing a photodetector according to claim 1; and using the photodetector to detect photons having an energy smaller than the bandgaps of the semiconductor nanoparticles. Currently amended
Canceled
Canceled
A method of manufacturing a graphene semiconductor photodetector, the method comprising: providing a monolayer chemical vapor deposition ("CVD") graphene on a metal; spin-coating a poly(meth y l methacrylate) (PMMA) solution in aniso le onto the graphene layer and air drying it; removing the metal on the reverse side of the graphene by etching; separating the released graphene on PMMA film and rinsing the film consecutively in a plurality of clean deionized ("DI") water baths; placing the film onto a clean substrate and air drying it; dissolving the PMMA with a solvent; patterning the graphene into a ribbon with e-beam lithography and oxygen; depositing silver (Ag) in a thermal evaporator on the e-bea m lithography in a defined central area of the graphene ribbon; transfo rm ing the Ag into one of AgC l, AgBr, and Ag i by a reaction with C 1 2, Br 2, or I 2, respectively; after the transformation of the Ag, coating A 12O 3 by atomic layer deposition (ALD) onto the structure; removing the A 12O 3 on the contact area by dipping it in a buffered HF solution (BHF), and patterning a nickel (Ni) electrode on the graphene ribbon with e-beam lithography followed by metal sputtering; and cleaning the PMMA. Withdrawn
The method of claim 15 wherein the step of spin-coating is carried out at 4,000 rpm for 1 minute with a 7 wt. % PMMA solution. Withdrawn
The method of claim 15 wherein the step of removing the metal on the reverse side of the graphene by etching is carried out with an oxygen reactive ion etching (RI E) for 2 minutes and then etching overnight in 0.1 M (N I 1 4) 2 S 2 0 8 aqueous solution. Withdrawn
The method of claim 15 wherein the substrate upon which the film is placed is one or more of a clean silicon substrate w ith 470 nm or 200 nm thermal oxide, quartz, or polyethylene terephthalate (PET) film. Withdrawn
The method of claim 15, wherein the Ag is deposited to a thickness of at least 0.5 nm. Withdrawn
The method of claim 15, wherein the step of dissolving PMMA is carried out with a mixture of dichloroethene and acetone. Withdrawn
The method of claim 15, wherein the step of transforming the Ag comprises transforming the Ag into AgC I by a reaction with C 1 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KCl O 3; adding an HCl solution to the solid so the C l 2 is generated in-situ (KC 10 3 + 6 HC l = KC l + 5 SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.1.svg 0.16 1.19 Black and white allowing it to react with evaporated Ag nanoparticles. Withdrawn
The method of claim 15, wherein the step of transfo rm ing the Ag comprises transforming the Ag into AgBr by a reaction with Br 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KBr; adding solid KMn O 4 and H 2 S O 4 mixture solution to the solid so a Br 2 vapor is produced by SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.2.svg 0.16 6.01 Black and white allowing it to react with Ag nanoparti c le. Withdrawn
The method of claim 15 wherein the step of trans fo rming the Ag comprises transforming the Ag into Ag I by a reaction with I₂ via the following steps: placing a sample substrate in a sealed vial containing I 2 solid; and heating th e reaction vial to allow the I 2 vapor to react with Ag nanoparticle. Withdrawn
The method of claim 15, wherein the step of coating A 1 2 0 3 comprises utilizing trimethylaluminum as a precursor. Withdrawn
The method of claim 15, wherein the metal is copper, wherein the solvent is acetone, and wherein cleaning the PMMA comprises cleaning the PMMA with a mixture of di chl oroethene and acetone. Withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials
AgCl/graphene photodetector fabricated on a quartz substrate and measured with a supercontinuum laser to explore wavelength-dependent photo response. Photon-to-current efficiency was measured and analyzed using Fowler theory. A flexible visible photodetector was also fabricated on PET film with ~92.8% transmittance recorded under natural direct sunlight illumination.
4 materials
Wavelength-resolved photo response of AgCl/graphene photodetector on thermal oxide (200 nm and 470 nm SiO₂). The spectral response was selectively enhanced by modulating SiO₂ thickness, creating a color-sensitive photodetector. Experimental photo response peaks matched FDTD simulation absorption peaks. AgBr/graphene and AgI/graphene responsivity versus wavelength were also measured (Eg(AgBr)=2.69 eV, Eg(AgI)=2.83 eV).
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor photodetector
Materials described outside the worked examples.
silver halide nanoparticles
silver (Ag)
Ag
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AgCl bandgap | 3.25 eV | AgCl |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,755,866Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows images of a possible process flow for fabricating a photodetector device according to an embodiment of the subject invention, in which
Figure 2 is an overview of the device according to the subject invention and the concepts upon which it is designed, in which
Figure 3 shows a photo response of AgC l/graphene device according to an embodiment of the subject invention on transparent substrates, in which
Figure 4 is a wavelength-resolved photo response, in which
Figure 5 is a FDTD simulation for a wavelength selective enhancement, in which
Figure 6 shows a plot of the responsivity versus wavelength for AgL/graphene and AgB r/graphene.
Figure 7 shows an AgC l -graphene photodetector and temporal photoresponse, in which 25
Figure 8 shows the spectral selectivity modulation characteristics of an embodiment of the subject invention, in which
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a supporting medium; a layer of graphene on the supporting medium; and a layer of semiconductor nanoparticles in direct, physical contact with the layer of graphen e, wherein the semiconductor nanopar t icles are semiconductors with ba n dgaps larger than the energy of photons intended to be detected by the photodetector, and wherein the semiconductor na n oparticles are silver halide nanoparticles. Currently amended
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is on the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is under the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is mixed in with the layer of graphene. Original
The photodetector of claim 1, wherein the graphene is chemical vapor deposition grown, liquid exfoliated, or mechanically exfoliated. Original
The photodetector of claim 1, wherein the diameter of the semiconductor nanoparticles is from the nanometer range to the micrometer range. Original
T he photodetector o claim 1, wherein the semiconductor nanoparticles are Ag Ci nanoparticles, with Eg = 3.25 eV, which detect photons with energy of less than 3.25 eV. Currently amended
The photodetector o claim 1, wherein the semiconductor nanoparticles are sensitized by organic or inorganic dyes so as to modulate their properties. Currently amended
The photodetector of claim 1, wherein the supporting medium is one or more of quartz, thermal oxidized Si, sapphire, silicon carbide, aluminum nitride, polydimethylsiloxane, and a flexible plastic substrate. Original
The photodetector of claim 1, wherein the thickness of the supporting medium is modulated to achieve selective enhancement of photodetection. Currently amended
A method of performing flexible and transparent optoelectronics for imaging, spectroscopy, sensing, or optical communications, the method comprising: providing a photodetector according to claim 1; and using the photodetector to detect photons having an energy smaller than the bandgaps of the semiconductor nanoparticles. Currently amended
Canceled
Canceled
A method of manufacturing a graphene semiconductor photodetector, the method comprising: providing a monolayer chemical vapor deposition ("CVD") graphene on a metal; spin-coating a poly(meth y l methacrylate) (PMMA) solution in aniso le onto the graphene layer and air drying it; removing the metal on the reverse side of the graphene by etching; separating the released graphene on PMMA film and rinsing the film consecutively in a plurality of clean deionized ("DI") water baths; placing the film onto a clean substrate and air drying it; dissolving the PMMA with a solvent; patterning the graphene into a ribbon with e-beam lithography and oxygen; depositing silver (Ag) in a thermal evaporator on the e-bea m lithography in a defined central area of the graphene ribbon; transfo rm ing the Ag into one of AgC l, AgBr, and Ag i by a reaction with C 1 2, Br 2, or I 2, respectively; after the transformation of the Ag, coating A 12O 3 by atomic layer deposition (ALD) onto the structure; removing the A 12O 3 on the contact area by dipping it in a buffered HF solution (BHF), and patterning a nickel (Ni) electrode on the graphene ribbon with e-beam lithography followed by metal sputtering; and cleaning the PMMA. Withdrawn
The method of claim 15 wherein the step of spin-coating is carried out at 4,000 rpm for 1 minute with a 7 wt. % PMMA solution. Withdrawn
The method of claim 15 wherein the step of removing the metal on the reverse side of the graphene by etching is carried out with an oxygen reactive ion etching (RI E) for 2 minutes and then etching overnight in 0.1 M (N I 1 4) 2 S 2 0 8 aqueous solution. Withdrawn
The method of claim 15 wherein the substrate upon which the film is placed is one or more of a clean silicon substrate w ith 470 nm or 200 nm thermal oxide, quartz, or polyethylene terephthalate (PET) film. Withdrawn
The method of claim 15, wherein the Ag is deposited to a thickness of at least 0.5 nm. Withdrawn
The method of claim 15, wherein the step of dissolving PMMA is carried out with a mixture of dichloroethene and acetone. Withdrawn
The method of claim 15, wherein the step of transforming the Ag comprises transforming the Ag into AgC I by a reaction with C 1 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KCl O 3; adding an HCl solution to the solid so the C l 2 is generated in-situ (KC 10 3 + 6 HC l = KC l + 5 SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.1.svg 0.16 1.19 Black and white allowing it to react with evaporated Ag nanoparticles. Withdrawn
The method of claim 15, wherein the step of transfo rm ing the Ag comprises transforming the Ag into AgBr by a reaction with Br 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KBr; adding solid KMn O 4 and H 2 S O 4 mixture solution to the solid so a Br 2 vapor is produced by SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.2.svg 0.16 6.01 Black and white allowing it to react with Ag nanoparti c le. Withdrawn
The method of claim 15 wherein the step of trans fo rming the Ag comprises transforming the Ag into Ag I by a reaction with I₂ via the following steps: placing a sample substrate in a sealed vial containing I 2 solid; and heating th e reaction vial to allow the I 2 vapor to react with Ag nanoparticle. Withdrawn
The method of claim 15, wherein the step of coating A 1 2 0 3 comprises utilizing trimethylaluminum as a precursor. Withdrawn
The method of claim 15, wherein the metal is copper, wherein the solvent is acetone, and wherein cleaning the PMMA comprises cleaning the PMMA with a mixture of di chl oroethene and acetone. Withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials
AgCl/graphene photodetector fabricated on a quartz substrate and measured with a supercontinuum laser to explore wavelength-dependent photo response. Photon-to-current efficiency was measured and analyzed using Fowler theory. A flexible visible photodetector was also fabricated on PET film with ~92.8% transmittance recorded under natural direct sunlight illumination.
4 materials
Wavelength-resolved photo response of AgCl/graphene photodetector on thermal oxide (200 nm and 470 nm SiO₂). The spectral response was selectively enhanced by modulating SiO₂ thickness, creating a color-sensitive photodetector. Experimental photo response peaks matched FDTD simulation absorption peaks. AgBr/graphene and AgI/graphene responsivity versus wavelength were also measured (Eg(AgBr)=2.69 eV, Eg(AgI)=2.83 eV).
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor photodetector
Materials described outside the worked examples.
silver halide nanoparticles
silver (Ag)
Ag
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AgCl bandgap | 3.25 eV | AgCl |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,755,866Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows images of a possible process flow for fabricating a photodetector device according to an embodiment of the subject invention, in which
Figure 2 is an overview of the device according to the subject invention and the concepts upon which it is designed, in which
Figure 3 shows a photo response of AgC l/graphene device according to an embodiment of the subject invention on transparent substrates, in which
Figure 4 is a wavelength-resolved photo response, in which
Figure 5 is a FDTD simulation for a wavelength selective enhancement, in which
Figure 6 shows a plot of the responsivity versus wavelength for AgL/graphene and AgB r/graphene.
Figure 7 shows an AgC l -graphene photodetector and temporal photoresponse, in which 25
Figure 8 shows the spectral selectivity modulation characteristics of an embodiment of the subject invention, in which
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a supporting medium; a layer of graphene on the supporting medium; and a layer of semiconductor nanoparticles in direct, physical contact with the layer of graphen e, wherein the semiconductor nanopar t icles are semiconductors with ba n dgaps larger than the energy of photons intended to be detected by the photodetector, and wherein the semiconductor na n oparticles are silver halide nanoparticles. Currently amended
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is on the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is under the layer of graphene. Original
The photodetector of claim 1, wherein the layer of semiconductor nanoparticles is mixed in with the layer of graphene. Original
The photodetector of claim 1, wherein the graphene is chemical vapor deposition grown, liquid exfoliated, or mechanically exfoliated. Original
The photodetector of claim 1, wherein the diameter of the semiconductor nanoparticles is from the nanometer range to the micrometer range. Original
T he photodetector o claim 1, wherein the semiconductor nanoparticles are Ag Ci nanoparticles, with Eg = 3.25 eV, which detect photons with energy of less than 3.25 eV. Currently amended
The photodetector o claim 1, wherein the semiconductor nanoparticles are sensitized by organic or inorganic dyes so as to modulate their properties. Currently amended
The photodetector of claim 1, wherein the supporting medium is one or more of quartz, thermal oxidized Si, sapphire, silicon carbide, aluminum nitride, polydimethylsiloxane, and a flexible plastic substrate. Original
The photodetector of claim 1, wherein the thickness of the supporting medium is modulated to achieve selective enhancement of photodetection. Currently amended
A method of performing flexible and transparent optoelectronics for imaging, spectroscopy, sensing, or optical communications, the method comprising: providing a photodetector according to claim 1; and using the photodetector to detect photons having an energy smaller than the bandgaps of the semiconductor nanoparticles. Currently amended
Canceled
Canceled
A method of manufacturing a graphene semiconductor photodetector, the method comprising: providing a monolayer chemical vapor deposition ("CVD") graphene on a metal; spin-coating a poly(meth y l methacrylate) (PMMA) solution in aniso le onto the graphene layer and air drying it; removing the metal on the reverse side of the graphene by etching; separating the released graphene on PMMA film and rinsing the film consecutively in a plurality of clean deionized ("DI") water baths; placing the film onto a clean substrate and air drying it; dissolving the PMMA with a solvent; patterning the graphene into a ribbon with e-beam lithography and oxygen; depositing silver (Ag) in a thermal evaporator on the e-bea m lithography in a defined central area of the graphene ribbon; transfo rm ing the Ag into one of AgC l, AgBr, and Ag i by a reaction with C 1 2, Br 2, or I 2, respectively; after the transformation of the Ag, coating A 12O 3 by atomic layer deposition (ALD) onto the structure; removing the A 12O 3 on the contact area by dipping it in a buffered HF solution (BHF), and patterning a nickel (Ni) electrode on the graphene ribbon with e-beam lithography followed by metal sputtering; and cleaning the PMMA. Withdrawn
The method of claim 15 wherein the step of spin-coating is carried out at 4,000 rpm for 1 minute with a 7 wt. % PMMA solution. Withdrawn
The method of claim 15 wherein the step of removing the metal on the reverse side of the graphene by etching is carried out with an oxygen reactive ion etching (RI E) for 2 minutes and then etching overnight in 0.1 M (N I 1 4) 2 S 2 0 8 aqueous solution. Withdrawn
The method of claim 15 wherein the substrate upon which the film is placed is one or more of a clean silicon substrate w ith 470 nm or 200 nm thermal oxide, quartz, or polyethylene terephthalate (PET) film. Withdrawn
The method of claim 15, wherein the Ag is deposited to a thickness of at least 0.5 nm. Withdrawn
The method of claim 15, wherein the step of dissolving PMMA is carried out with a mixture of dichloroethene and acetone. Withdrawn
The method of claim 15, wherein the step of transforming the Ag comprises transforming the Ag into AgC I by a reaction with C 1 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KCl O 3; adding an HCl solution to the solid so the C l 2 is generated in-situ (KC 10 3 + 6 HC l = KC l + 5 SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.1.svg 0.16 1.19 Black and white allowing it to react with evaporated Ag nanoparticles. Withdrawn
The method of claim 15, wherein the step of transfo rm ing the Ag comprises transforming the Ag into AgBr by a reaction with Br 2 via the following steps: covering a sample substrate with a layer of silica gel and placing it in a sealed vial with solid KBr; adding solid KMn O 4 and H 2 S O 4 mixture solution to the solid so a Br 2 vapor is produced by SVG 15614975.02-26-2020.K₇₃WKV₅DRXEAPX2.CLM.2.svg 0.16 6.01 Black and white allowing it to react with Ag nanoparti c le. Withdrawn
The method of claim 15 wherein the step of trans fo rming the Ag comprises transforming the Ag into Ag I by a reaction with I₂ via the following steps: placing a sample substrate in a sealed vial containing I 2 solid; and heating th e reaction vial to allow the I 2 vapor to react with Ag nanoparticle. Withdrawn
The method of claim 15, wherein the step of coating A 1 2 0 3 comprises utilizing trimethylaluminum as a precursor. Withdrawn
The method of claim 15, wherein the metal is copper, wherein the solvent is acetone, and wherein cleaning the PMMA comprises cleaning the PMMA with a mixture of di chl oroethene and acetone. Withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials
AgCl/graphene photodetector fabricated on a quartz substrate and measured with a supercontinuum laser to explore wavelength-dependent photo response. Photon-to-current efficiency was measured and analyzed using Fowler theory. A flexible visible photodetector was also fabricated on PET film with ~92.8% transmittance recorded under natural direct sunlight illumination.
4 materials
Wavelength-resolved photo response of AgCl/graphene photodetector on thermal oxide (200 nm and 470 nm SiO₂). The spectral response was selectively enhanced by modulating SiO₂ thickness, creating a color-sensitive photodetector. Experimental photo response peaks matched FDTD simulation absorption peaks. AgBr/graphene and AgI/graphene responsivity versus wavelength were also measured (Eg(AgBr)=2.69 eV, Eg(AgI)=2.83 eV).
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor photodetector
Materials described outside the worked examples.
silver halide nanoparticles
silver (Ag)
Ag
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AgCl bandgap | 3.25 eV | AgCl |
Related documents with shared materials, methods, properties, or citations.
aluminum oxide (Al₂O₃)
Al₂O₃
| 2.69 eV |
AgBr |
AgI bandgap | 2.83 eV | AgI |
transmittance of AgCl/graphene on PET under natural sunlight | 92.8 % | AgCl |
— | ≤ 3.25 eV | — |
Thickness | ≥ 0.5 nm | — |
GRAPHENE FIELD EFFECT TRANSISTOR
aluminum oxide (Al₂O₃)
Al₂O₃
| 2.69 eV |
AgBr |
AgI bandgap | 2.83 eV | AgI |
transmittance of AgCl/graphene on PET under natural sunlight | 92.8 % | AgCl |
— | ≤ 3.25 eV | — |
Thickness | ≥ 0.5 nm | — |
GRAPHENE FIELD EFFECT TRANSISTOR
aluminum oxide (Al₂O₃)
Al₂O₃
| 2.69 eV |
AgBr |
AgI bandgap | 2.83 eV | AgI |
transmittance of AgCl/graphene on PET under natural sunlight | 92.8 % | AgCl |
— | ≤ 3.25 eV | — |
Thickness | ≥ 0.5 nm | — |
GRAPHENE FIELD EFFECT TRANSISTOR
aluminum oxide (Al₂O₃)
Al₂O₃
| 2.69 eV |
AgBr |
AgI bandgap | 2.83 eV | AgI |
transmittance of AgCl/graphene on PET under natural sunlight | 92.8 % | AgCl |
— | ≤ 3.25 eV | — |
Thickness | ≥ 0.5 nm | — |
GRAPHENE FIELD EFFECT TRANSISTOR