Patent
US 9,371,234METHOD FOR PRODUCING GRAPHENE AT LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET
Byung Hee Hong
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,371,234Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A producing method of producing g raphene comprising: loading a substrate into a deposition chamber using a first roll-to-roll process; forming a metal catalyst layer on the substrate in the deposition chamber; loading the substrate from the deposition chamber into an inductively coupled plasma-chemical vapor deposition (ICP-CVD) chamber using a second roll-to-roll process after the metal catalyst layer is formed on the substrate; supplying a-carbon source-containing gas to a-the substrate in the ICP-CVD chamber; and p roducing forming, within the ICP-CVD chamber, graphene on the metal catalyst layer formed on the substrate from the carbon source-containing gas, at a low temperature of about 500 ° C or less by inductively coupled plasma-chemical vapor deposition (ICP-CVD).
The producing method of graphene of claim 1, including: 2
The producing method of graphene of claim 1. wherein the substrate has transparency or flexibility, or transparency and flexibility.
The method for direct transfer of graphene of claim 1 7. wherein the metal catalyst layer for growing graphene is removed through an etching process using an etching solution including an acid, a salt, FeC 1 3 or combinations thereof. withdrawn
canceled
The producing method o f graphene of claim 2 claim 1, wherein the metal catalyst layer for growing graphene is patterned.
The producing method of graphene of claim 2 claim 1, further including: separating the produced graphene in a sheet form f rom the substrate by removing the metal catalyst layer for growing graphene after the graphene is produced formed.
SVG 13810144.01-07-2016.IJ₄FG₀EHPXXIFW3.CLM.1.svg 1.45 7.5 Black and white 4. canceled
canceled
canceled
The producing method of graphene of c laim 1, wherein the substrate is a polymer sheet containing a polymer compound having 7 -electrons or includes the polymer sheet.
3 canceled
The producing method of graphene of c laim 1, further including: cooling the produced graphene.
canceled
canceled
A method for direct transfer of graphene, the method comprising: producing graphene on a metal catalyst layer for growing graphene form ed on a substrate; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced and directly transferred through a roll-to-roll process. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced by supplying a carbon source-containing gas to a inctal catalyst layer for growing graphene formed on the substrate; and producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ° C or less by I CP-CVD. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is directly transfer through a roll-to-roll process. withdrawn
A graphene sheet comprising: a substrate; and graphene produced at a low temperature of about 500 ° C or less by IC P -CV D. withdrawn
The graphene sheet of claim 22, wherein the graphene sheet is produced through a process including: supplying a carbon source-containing gas to a metal catalyst layer for growing graphene formed on the substrate; producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ' C or less by ICP-CVD; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The graphene sheet of claim 22, wherein the graphene is doped with a dopant including an organic dopant, an inorganic dopant or a combination thereof. withdrawn
7 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet
Materials described outside the worked examples.
graphene
metal catalyst layer for growing graphene
Additional fabrication and treatment steps described in the patent.
Table 1
SVG
atalyst layer (in each case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Table 2
SVG
h case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Patent
Atlas literature
Patent
US 9,371,234Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A producing method of producing g raphene comprising: loading a substrate into a deposition chamber using a first roll-to-roll process; forming a metal catalyst layer on the substrate in the deposition chamber; loading the substrate from the deposition chamber into an inductively coupled plasma-chemical vapor deposition (ICP-CVD) chamber using a second roll-to-roll process after the metal catalyst layer is formed on the substrate; supplying a-carbon source-containing gas to a-the substrate in the ICP-CVD chamber; and p roducing forming, within the ICP-CVD chamber, graphene on the metal catalyst layer formed on the substrate from the carbon source-containing gas, at a low temperature of about 500 ° C or less by inductively coupled plasma-chemical vapor deposition (ICP-CVD).
The producing method of graphene of claim 1, including: 2
The producing method of graphene of claim 1. wherein the substrate has transparency or flexibility, or transparency and flexibility.
The method for direct transfer of graphene of claim 1 7. wherein the metal catalyst layer for growing graphene is removed through an etching process using an etching solution including an acid, a salt, FeC 1 3 or combinations thereof. withdrawn
canceled
The producing method o f graphene of claim 2 claim 1, wherein the metal catalyst layer for growing graphene is patterned.
The producing method of graphene of claim 2 claim 1, further including: separating the produced graphene in a sheet form f rom the substrate by removing the metal catalyst layer for growing graphene after the graphene is produced formed.
SVG 13810144.01-07-2016.IJ₄FG₀EHPXXIFW3.CLM.1.svg 1.45 7.5 Black and white 4. canceled
canceled
canceled
The producing method of graphene of c laim 1, wherein the substrate is a polymer sheet containing a polymer compound having 7 -electrons or includes the polymer sheet.
3 canceled
The producing method of graphene of c laim 1, further including: cooling the produced graphene.
canceled
canceled
A method for direct transfer of graphene, the method comprising: producing graphene on a metal catalyst layer for growing graphene form ed on a substrate; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced and directly transferred through a roll-to-roll process. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced by supplying a carbon source-containing gas to a inctal catalyst layer for growing graphene formed on the substrate; and producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ° C or less by I CP-CVD. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is directly transfer through a roll-to-roll process. withdrawn
A graphene sheet comprising: a substrate; and graphene produced at a low temperature of about 500 ° C or less by IC P -CV D. withdrawn
The graphene sheet of claim 22, wherein the graphene sheet is produced through a process including: supplying a carbon source-containing gas to a metal catalyst layer for growing graphene formed on the substrate; producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ' C or less by ICP-CVD; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The graphene sheet of claim 22, wherein the graphene is doped with a dopant including an organic dopant, an inorganic dopant or a combination thereof. withdrawn
7 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet
Materials described outside the worked examples.
graphene
metal catalyst layer for growing graphene
Additional fabrication and treatment steps described in the patent.
Table 1
SVG
atalyst layer (in each case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Table 2
SVG
h case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Patent
Atlas literature
Patent
US 9,371,234Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A producing method of producing g raphene comprising: loading a substrate into a deposition chamber using a first roll-to-roll process; forming a metal catalyst layer on the substrate in the deposition chamber; loading the substrate from the deposition chamber into an inductively coupled plasma-chemical vapor deposition (ICP-CVD) chamber using a second roll-to-roll process after the metal catalyst layer is formed on the substrate; supplying a-carbon source-containing gas to a-the substrate in the ICP-CVD chamber; and p roducing forming, within the ICP-CVD chamber, graphene on the metal catalyst layer formed on the substrate from the carbon source-containing gas, at a low temperature of about 500 ° C or less by inductively coupled plasma-chemical vapor deposition (ICP-CVD).
The producing method of graphene of claim 1, including: 2
The producing method of graphene of claim 1. wherein the substrate has transparency or flexibility, or transparency and flexibility.
The method for direct transfer of graphene of claim 1 7. wherein the metal catalyst layer for growing graphene is removed through an etching process using an etching solution including an acid, a salt, FeC 1 3 or combinations thereof. withdrawn
canceled
The producing method o f graphene of claim 2 claim 1, wherein the metal catalyst layer for growing graphene is patterned.
The producing method of graphene of claim 2 claim 1, further including: separating the produced graphene in a sheet form f rom the substrate by removing the metal catalyst layer for growing graphene after the graphene is produced formed.
SVG 13810144.01-07-2016.IJ₄FG₀EHPXXIFW3.CLM.1.svg 1.45 7.5 Black and white 4. canceled
canceled
canceled
The producing method of graphene of c laim 1, wherein the substrate is a polymer sheet containing a polymer compound having 7 -electrons or includes the polymer sheet.
3 canceled
The producing method of graphene of c laim 1, further including: cooling the produced graphene.
canceled
canceled
A method for direct transfer of graphene, the method comprising: producing graphene on a metal catalyst layer for growing graphene form ed on a substrate; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced and directly transferred through a roll-to-roll process. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced by supplying a carbon source-containing gas to a inctal catalyst layer for growing graphene formed on the substrate; and producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ° C or less by I CP-CVD. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is directly transfer through a roll-to-roll process. withdrawn
A graphene sheet comprising: a substrate; and graphene produced at a low temperature of about 500 ° C or less by IC P -CV D. withdrawn
The graphene sheet of claim 22, wherein the graphene sheet is produced through a process including: supplying a carbon source-containing gas to a metal catalyst layer for growing graphene formed on the substrate; producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ' C or less by ICP-CVD; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The graphene sheet of claim 22, wherein the graphene is doped with a dopant including an organic dopant, an inorganic dopant or a combination thereof. withdrawn
7 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet
Materials described outside the worked examples.
graphene
metal catalyst layer for growing graphene
Additional fabrication and treatment steps described in the patent.
Table 1
SVG
atalyst layer (in each case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Table 2
SVG
h case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Patent
Atlas literature
Patent
US 9,371,234Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A producing method of producing g raphene comprising: loading a substrate into a deposition chamber using a first roll-to-roll process; forming a metal catalyst layer on the substrate in the deposition chamber; loading the substrate from the deposition chamber into an inductively coupled plasma-chemical vapor deposition (ICP-CVD) chamber using a second roll-to-roll process after the metal catalyst layer is formed on the substrate; supplying a-carbon source-containing gas to a-the substrate in the ICP-CVD chamber; and p roducing forming, within the ICP-CVD chamber, graphene on the metal catalyst layer formed on the substrate from the carbon source-containing gas, at a low temperature of about 500 ° C or less by inductively coupled plasma-chemical vapor deposition (ICP-CVD).
The producing method of graphene of claim 1, including: 2
The producing method of graphene of claim 1. wherein the substrate has transparency or flexibility, or transparency and flexibility.
The method for direct transfer of graphene of claim 1 7. wherein the metal catalyst layer for growing graphene is removed through an etching process using an etching solution including an acid, a salt, FeC 1 3 or combinations thereof. withdrawn
canceled
The producing method o f graphene of claim 2 claim 1, wherein the metal catalyst layer for growing graphene is patterned.
The producing method of graphene of claim 2 claim 1, further including: separating the produced graphene in a sheet form f rom the substrate by removing the metal catalyst layer for growing graphene after the graphene is produced formed.
SVG 13810144.01-07-2016.IJ₄FG₀EHPXXIFW3.CLM.1.svg 1.45 7.5 Black and white 4. canceled
canceled
canceled
The producing method of graphene of c laim 1, wherein the substrate is a polymer sheet containing a polymer compound having 7 -electrons or includes the polymer sheet.
3 canceled
The producing method of graphene of c laim 1, further including: cooling the produced graphene.
canceled
canceled
A method for direct transfer of graphene, the method comprising: producing graphene on a metal catalyst layer for growing graphene form ed on a substrate; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced and directly transferred through a roll-to-roll process. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is produced by supplying a carbon source-containing gas to a inctal catalyst layer for growing graphene formed on the substrate; and producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ° C or less by I CP-CVD. withdrawn
The method for direct transfer of graphene of claim 17, wherein the graphene is directly transfer through a roll-to-roll process. withdrawn
A graphene sheet comprising: a substrate; and graphene produced at a low temperature of about 500 ° C or less by IC P -CV D. withdrawn
The graphene sheet of claim 22, wherein the graphene sheet is produced through a process including: supplying a carbon source-containing gas to a metal catalyst layer for growing graphene formed on the substrate; producing graphene on the metal catalyst layer for growing graphene at a low temperature of about 500 ' C or less by ICP-CVD; and removing the metal catalyst layer for growing graphene to directly transfer the produced graphene on the substrate. withdrawn
The graphene sheet of claim 22, wherein the graphene is doped with a dopant including an organic dopant, an inorganic dopant or a combination thereof. withdrawn
7 canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet
Materials described outside the worked examples.
graphene
metal catalyst layer for growing graphene
Additional fabrication and treatment steps described in the patent.
Table 1
SVG
atalyst layer (in each case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
Table 2
SVG
h case of using Ni and Cu) used for synthesizing the graphene sheet illustrated in below Table 1 (Ni film) and Table 2 (Cu film).
p. 15
substrate
polymer sheet containing a polymer compound having pi-electrons
etching solution
dopant (organic or inorganic)
carbon source-containing gas
substrate
polymer sheet containing a polymer compound having pi-electrons
etching solution
dopant (organic or inorganic)
carbon source-containing gas
substrate
polymer sheet containing a polymer compound having pi-electrons
etching solution
dopant (organic or inorganic)
carbon source-containing gas
substrate
polymer sheet containing a polymer compound having pi-electrons
etching solution
dopant (organic or inorganic)
carbon source-containing gas