Patent
Atlas literature
Patent
US 12,285,819 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing the structure of a crystal bar and twinning of a cut wafer;
FIG. 2 is a schematic diagram of the structure of a crystal bar;
FIG. 3 is a schematic flow diagram of a conventional barreling process for substrate wafer;
FIG. 4 is a schematic view showing a crystal orientation structure of a crystal bar in an embodiment;
FIG. 5 is a schematic view of a usable area for conven- tional barreling processing of a wafer in an embodiment;
FIG. 6 is a schematic view of a usable area for processing a wafer of the present invention in an embodiment;
FIG. 7 is a schematic flow chart for processing a substrate wafer according to the present invention;
FIG. 8 is a schematic view showing the structure of a carrier plate supporting a crystal bar in an embodiment; In the drawings, 1 represents a positive crystal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for cutting a substrate crystal wafer from an indium phosphide crystal characterized by comprising fol-lowing steps of: 1) orientating: cutting a head and a tail of a crystal bar, adjusting the orientation and cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting: on a multi-wire cutting apparatus, dividing the crystal bar parallel to an orientation end face into wafers; 3) cleaning: cleaning the wafer until no residue or dirt exists on the surface; 4) circle cutting: performing circle cutting on the wafer to cut an area having a same crystal orientation.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 1), the parallelism error of the orientation end face and the required crystal orientation is +/−0.02°.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the steps 1) and 2), the crystal bar is bonded to a carrier plate, and the carrier plate is provided with a placing groove matched with the shape of a side of the crystal bar.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: the wafer thickness divided in the step 2) is less than or equal to 2000 km.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 4), pumping and deslagging are performed in the laser cutting process.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: a type of the cleaning agent in the step 3) is matched with a type of the multi-wire cutting fluid. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium phosphide crystal
InP
graphite plate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 510–550 nm | — |
— |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Patent
Atlas literature
Patent
US 12,285,819 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing the structure of a crystal bar and twinning of a cut wafer;
FIG. 2 is a schematic diagram of the structure of a crystal bar;
FIG. 3 is a schematic flow diagram of a conventional barreling process for substrate wafer;
FIG. 4 is a schematic view showing a crystal orientation structure of a crystal bar in an embodiment;
FIG. 5 is a schematic view of a usable area for conven- tional barreling processing of a wafer in an embodiment;
FIG. 6 is a schematic view of a usable area for processing a wafer of the present invention in an embodiment;
FIG. 7 is a schematic flow chart for processing a substrate wafer according to the present invention;
FIG. 8 is a schematic view showing the structure of a carrier plate supporting a crystal bar in an embodiment; In the drawings, 1 represents a positive crystal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for cutting a substrate crystal wafer from an indium phosphide crystal characterized by comprising fol-lowing steps of: 1) orientating: cutting a head and a tail of a crystal bar, adjusting the orientation and cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting: on a multi-wire cutting apparatus, dividing the crystal bar parallel to an orientation end face into wafers; 3) cleaning: cleaning the wafer until no residue or dirt exists on the surface; 4) circle cutting: performing circle cutting on the wafer to cut an area having a same crystal orientation.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 1), the parallelism error of the orientation end face and the required crystal orientation is +/−0.02°.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the steps 1) and 2), the crystal bar is bonded to a carrier plate, and the carrier plate is provided with a placing groove matched with the shape of a side of the crystal bar.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: the wafer thickness divided in the step 2) is less than or equal to 2000 km.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 4), pumping and deslagging are performed in the laser cutting process.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: a type of the cleaning agent in the step 3) is matched with a type of the multi-wire cutting fluid. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium phosphide crystal
InP
graphite plate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 510–550 nm | — |
— |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Patent
Atlas literature
Patent
US 12,285,819 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing the structure of a crystal bar and twinning of a cut wafer;
FIG. 2 is a schematic diagram of the structure of a crystal bar;
FIG. 3 is a schematic flow diagram of a conventional barreling process for substrate wafer;
FIG. 4 is a schematic view showing a crystal orientation structure of a crystal bar in an embodiment;
FIG. 5 is a schematic view of a usable area for conven- tional barreling processing of a wafer in an embodiment;
FIG. 6 is a schematic view of a usable area for processing a wafer of the present invention in an embodiment;
FIG. 7 is a schematic flow chart for processing a substrate wafer according to the present invention;
FIG. 8 is a schematic view showing the structure of a carrier plate supporting a crystal bar in an embodiment; In the drawings, 1 represents a positive crystal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for cutting a substrate crystal wafer from an indium phosphide crystal characterized by comprising fol-lowing steps of: 1) orientating: cutting a head and a tail of a crystal bar, adjusting the orientation and cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting: on a multi-wire cutting apparatus, dividing the crystal bar parallel to an orientation end face into wafers; 3) cleaning: cleaning the wafer until no residue or dirt exists on the surface; 4) circle cutting: performing circle cutting on the wafer to cut an area having a same crystal orientation.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 1), the parallelism error of the orientation end face and the required crystal orientation is +/−0.02°.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the steps 1) and 2), the crystal bar is bonded to a carrier plate, and the carrier plate is provided with a placing groove matched with the shape of a side of the crystal bar.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: the wafer thickness divided in the step 2) is less than or equal to 2000 km.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 4), pumping and deslagging are performed in the laser cutting process.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: a type of the cleaning agent in the step 3) is matched with a type of the multi-wire cutting fluid. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium phosphide crystal
InP
graphite plate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 510–550 nm | — |
— |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
Patent
Atlas literature
Patent
US 12,285,819 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing the structure of a crystal bar and twinning of a cut wafer;
FIG. 2 is a schematic diagram of the structure of a crystal bar;
FIG. 3 is a schematic flow diagram of a conventional barreling process for substrate wafer;
FIG. 4 is a schematic view showing a crystal orientation structure of a crystal bar in an embodiment;
FIG. 5 is a schematic view of a usable area for conven- tional barreling processing of a wafer in an embodiment;
FIG. 6 is a schematic view of a usable area for processing a wafer of the present invention in an embodiment;
FIG. 7 is a schematic flow chart for processing a substrate wafer according to the present invention;
FIG. 8 is a schematic view showing the structure of a carrier plate supporting a crystal bar in an embodiment; In the drawings, 1 represents a positive crystal …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for cutting a substrate crystal wafer from an indium phosphide crystal characterized by comprising fol-lowing steps of: 1) orientating: cutting a head and a tail of a crystal bar, adjusting the orientation and cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting: on a multi-wire cutting apparatus, dividing the crystal bar parallel to an orientation end face into wafers; 3) cleaning: cleaning the wafer until no residue or dirt exists on the surface; 4) circle cutting: performing circle cutting on the wafer to cut an area having a same crystal orientation.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 1), the parallelism error of the orientation end face and the required crystal orientation is +/−0.02°.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the steps 1) and 2), the crystal bar is bonded to a carrier plate, and the carrier plate is provided with a placing groove matched with the shape of a side of the crystal bar.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: the wafer thickness divided in the step 2) is less than or equal to 2000 km.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: in the step 4), pumping and deslagging are performed in the laser cutting process.
The method for cutting a substrate crystal wafer from the indium phosphide crystal of claim 1, characterized in that: a type of the cleaning agent in the step 3) is matched with a type of the multi-wire cutting fluid. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium phosphide crystal
InP
graphite plate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 510–550 nm | — |
— |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 14
resin plate
| 50–200 W |
| — |
Thickness | 10–50 mm | — |
Duration | 1.5–3 min | — |
Duration | 2.5–4.5 min | — |
Thickness | 10–50 µm | — |
Cited non-patent literature · 1
resin plate
| 50–200 W |
| — |
Thickness | 10–50 mm | — |
Duration | 1.5–3 min | — |
Duration | 2.5–4.5 min | — |
Thickness | 10–50 µm | — |
Cited non-patent literature · 1
resin plate
| 50–200 W |
| — |
Thickness | 10–50 mm | — |
Duration | 1.5–3 min | — |
Duration | 2.5–4.5 min | — |
Thickness | 10–50 µm | — |
Cited non-patent literature · 1
resin plate
| 50–200 W |
| — |
Thickness | 10–50 mm | — |
Duration | 1.5–3 min | — |
Duration | 2.5–4.5 min | — |
Thickness | 10–50 µm | — |
Cited non-patent literature · 1
