MULTI-DEVICE INTEGRATION

Shamit Som

Patent

Atlas literature

Patent

US 11,417,644

MULTI-DEVICE INTEGRATION

Shamit Som

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 illustrates an example ampliﬁer according various embodiments described herein. [0013]

FIG. 2

FIG. 2 illustrates a ﬁrst die and a second die, including separate power transistors, for the ampliﬁer shown in

FIG. 3

FIG. 3 illustrates a single die, including two power transistors, for the ampliﬁer shown in

FIG. 4

FIG. 4 illustrates a region of a ﬁrst power transistor on the die shown in

FIG. 5

FIG. 5 illustrates a region of a second power transistor on the die shown in

FIG. 6

FIG. 6A illustrates a region including a terminal metal feature that is shared between the ﬁrst transistor and the second transistor on the die shown in

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 18 dependent

1
Independentintegrated semiconductor device with two transistors sharing a terminal metal feature
An integrated semiconductor device, comprising: a ﬁrst transistor formed on a substrate; and a second transistor formed on the substrate, wherein. a ﬁrst width of a q ate ﬁn q er of the ﬁrst transistor is q reater than a second width of a q ate ﬁn q er of the second transistor; the ﬁrst transistor and the second transistor share at least one terminal metal feature to reduce a size of the integrated semiconductor device; and the at least one terminal metal feature is positioned between the q ate ﬁn q er of the ﬁrst transistor and the q ate ﬁn q er of the second transistor. Currently amended
1. 2
  Dependent← claim 1integrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein the at least one terminal metal feature comprises a shared source electrode metalization of the ﬁrst transistor and the second transistor. Original
2. 5
  Dependent← claim 1integrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein: the ﬁrst transistor comprises a number of gate ﬁngers, a number of drain electrodes, and a number of source electrodes; [[and]] the gate ﬁngers, drain electrodes, and source electrodes are interdigitated among each other; and each drain electrode amon g the number of drain electrodes is positioned between two q ate ﬁn g ers amon g the number of g ate ﬁn g ers. Currently amended
3. 6
  Dependent← claim 1integrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein a gate-to-gate pitch of the ﬁrst transistor is smaller than the gate-to-gate pitch of the second transistor. Original
4. 7
  Dependent← claim 1integrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein the ﬁrst transistor and the second transistor comprise power transistors in an ampliﬁer. Original
5. 8
  Dependent← claim 1integrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein: the ﬁrst transistor comprises a main power transistor in a Doherty ampliﬁer; and the second transistor comprises a peak power transistor in the Doherty ampliﬁer. Original
6. 9
  Dependent← claim 1SiSiCintegrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein the substrate comprises at least one of silicon or silicon carbide. Original
7. 11
  Dependent← claim 1GaNintegrated semiconductor device with two transistors sharing a terminal metal feature
  The integrated semiconductor device of claim 1, wherein the ﬁrst transistor and the second transistor comprise gallium nitride semiconductor material power transistors. Original
12
Independentintegrated semiconductor device with two active devices sharing a terminal metal feature
An integrated semiconductor device, comprising: a ﬁrst active device formed on a substrate; and a second active device formed on the substrate, wherein a ﬁrst width of an electrode of the ﬁrst active device is g reater than a second width of an electrode of the second active device; Application Number: 16/903,961 Docket Number: 171305-1830 the ﬁrst active device and the second active device share at least one terminal metal feature to reduce a size of the integrated semiconductor device; and the at least one terminal metal feature is positioned between the electrode of the ﬁrst active device and the electrode of the second active device. Currently amended
1. 13
  Dependent← claim 12integrated semiconductor device with two active devices sharing a terminal metal feature
  The integrated semiconductor device of claim 12, wherein the at least one terminal metal feature comprises a shared electrode metalization of the ﬁrst active device and the second active device. Original
2. 16
  Dependent← claim 12integrated semiconductor device with two active devices sharing a terminal metal feature
  The integrated semiconductor device of claim 12, wherein: the ﬁrst active device comprises a number of gate ﬁngers, a number of drain electrodes, and a number of source electrodes; [[and]] the gate ﬁngers, drain electrodes, and source electrodes are interdigitated among each other; and each drain electrode amon g the number of drain electrodes is positioned between two q ate ﬁn g ers amon g the number of g ate ﬁn g ers. Currently amended
3. 17
  Dependent← claim 12integrated semiconductor device with two active devices sharing a terminal metal feature
  The integrated semiconductor device of claim 12, wherein a gate-to-gate pitch of the ﬁrst active device is smaller than the gate-to-gate pitch of the second active device. Original
4. 18
  Dependent← claim 12integrated semiconductor device with two active devices sharing a terminal metal feature
  The integrated semiconductor device of claim 12, wherein: the ﬁrst active device comprises a main power transistor in a Doherty ampliﬁer; and the second active device comprises a peak power transistor in the Doherty ampliﬁer. Original
5. 19
  Dependent← claim 12SiSiCintegrated semiconductor device with two active devices sharing a terminal metal feature
  The integrated semiconductor device of claim 12, wherein the substrate comprises at least one of silicon or silicon-carbide. Original
6. 20
  Dependent← claim 12GaNintegrated semiconductor device with two active devices sharing a terminal metal feature
  The integrated semiconductor device of claim 12, wherein the ﬁrst active device and the second active device comprise gallium nitride semiconductor material power transistors. Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

integrated semiconductor device with two transistors sharing a terminal metal feature

shared_terminal_metal_featureshared terminal metal feature

second_transistor_gate_fingersecond transistor gate finger

first_transistor_gate_fingerfirst transistor gate finger

substratesubstrate

integrated semiconductor device with two active devices sharing a terminal metal feature

Materials

Materials described outside the worked examples.

silicon

Substrate

silicon carbide

SiC

Substrate

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 2 illustrates a ﬁrst die and a second die, including separate power transistors, for the ampliﬁer shown in

Figure references

FIG. 2

fet electrical

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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