Patent
US 9,670,590GRAPHENE PATTERN AND PROCESS OF PREPARING THE SAME
Jae-Young CHOI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,670,590Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a process of preparing a graphene pattern 10 according to an embodiment of the present invention;
FIG. 2 schematically shows a polymer coated on a graphitizing catalyst;
FIG. 3 schematically shows a structure of graphene formed on a graphitizing catalyst;
FIG. 4 schematically shows a process of preparing a graphene pattern 15 according to an embodiment of the present invention;
FIG. 5 schematically shows a stack of polymers formed on the graphitizing catalyst and having a hydrophilic part and a hydrophobic part;
FIG. 6 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention; 20
FIG. 7 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention;
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene pattern comprising: 1-300 layers of graphene, which is a polycyclic aromatic molecule in which a plurality of carbon atoms are covalently bound to each other, wherein the graphene is disposed on at least one surface of a substrate, wherein the graphene is patterned, and having a single crystalline structure wherein a D band/G band peak ratio is 0. 01 greater than 0 and equal to or less than 0.2, when measured in a Raman spectrum of the graphene.
The graphene pattern of claim 1, having 1-60 layers of graphene.
The graphene pattern of claim 1, further comprising a graphitizing catalyst interposed between the substrate and the graphene.
canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst pattern is formed; contacting a carbonaceous material with the substrate on which the graphene pattern is formed; and forming graphene on the graphitizing catalyst pattern through heat-treatment in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 6, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 6, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 6, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 6, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 0 C for 0.1 to 10 hours. withdrawn
The process of claim 6, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. withdrawn
. canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst is formed; contacting a carbonaceous material with the substrate; and forming a graphene pattern by selectively heat-treating the carbonaceous material in a predetermined pattern shape in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 13, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 13, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 13, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 13, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 ° C for 0.1 to 10 hours. withdrawn
The process of claim 13, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. 4 SI-3 1209-US RD₂₀₀₇₀₆₀ 101USO YPL 0 553USC withdrawn
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene pattern on substrate
Materials described outside the worked examples.
graphene
C
graphitizing catalyst
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D band/G band peak ratio | 0–0.2 dimensionless | C |
D band/G band peak ratio (preferred zero) | ≤ 0.01 dimensionless |
Patent
Atlas literature
Patent
US 9,670,590Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a process of preparing a graphene pattern 10 according to an embodiment of the present invention;
FIG. 2 schematically shows a polymer coated on a graphitizing catalyst;
FIG. 3 schematically shows a structure of graphene formed on a graphitizing catalyst;
FIG. 4 schematically shows a process of preparing a graphene pattern 15 according to an embodiment of the present invention;
FIG. 5 schematically shows a stack of polymers formed on the graphitizing catalyst and having a hydrophilic part and a hydrophobic part;
FIG. 6 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention; 20
FIG. 7 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention;
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene pattern comprising: 1-300 layers of graphene, which is a polycyclic aromatic molecule in which a plurality of carbon atoms are covalently bound to each other, wherein the graphene is disposed on at least one surface of a substrate, wherein the graphene is patterned, and having a single crystalline structure wherein a D band/G band peak ratio is 0. 01 greater than 0 and equal to or less than 0.2, when measured in a Raman spectrum of the graphene.
The graphene pattern of claim 1, having 1-60 layers of graphene.
The graphene pattern of claim 1, further comprising a graphitizing catalyst interposed between the substrate and the graphene.
canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst pattern is formed; contacting a carbonaceous material with the substrate on which the graphene pattern is formed; and forming graphene on the graphitizing catalyst pattern through heat-treatment in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 6, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 6, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 6, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 6, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 0 C for 0.1 to 10 hours. withdrawn
The process of claim 6, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. withdrawn
. canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst is formed; contacting a carbonaceous material with the substrate; and forming a graphene pattern by selectively heat-treating the carbonaceous material in a predetermined pattern shape in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 13, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 13, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 13, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 13, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 ° C for 0.1 to 10 hours. withdrawn
The process of claim 13, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. 4 SI-3 1209-US RD₂₀₀₇₀₆₀ 101USO YPL 0 553USC withdrawn
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene pattern on substrate
Materials described outside the worked examples.
graphene
C
graphitizing catalyst
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D band/G band peak ratio | 0–0.2 dimensionless | C |
D band/G band peak ratio (preferred zero) | ≤ 0.01 dimensionless |
Patent
Atlas literature
Patent
US 9,670,590Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a process of preparing a graphene pattern 10 according to an embodiment of the present invention;
FIG. 2 schematically shows a polymer coated on a graphitizing catalyst;
FIG. 3 schematically shows a structure of graphene formed on a graphitizing catalyst;
FIG. 4 schematically shows a process of preparing a graphene pattern 15 according to an embodiment of the present invention;
FIG. 5 schematically shows a stack of polymers formed on the graphitizing catalyst and having a hydrophilic part and a hydrophobic part;
FIG. 6 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention; 20
FIG. 7 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention;
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene pattern comprising: 1-300 layers of graphene, which is a polycyclic aromatic molecule in which a plurality of carbon atoms are covalently bound to each other, wherein the graphene is disposed on at least one surface of a substrate, wherein the graphene is patterned, and having a single crystalline structure wherein a D band/G band peak ratio is 0. 01 greater than 0 and equal to or less than 0.2, when measured in a Raman spectrum of the graphene.
The graphene pattern of claim 1, having 1-60 layers of graphene.
The graphene pattern of claim 1, further comprising a graphitizing catalyst interposed between the substrate and the graphene.
canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst pattern is formed; contacting a carbonaceous material with the substrate on which the graphene pattern is formed; and forming graphene on the graphitizing catalyst pattern through heat-treatment in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 6, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 6, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 6, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 6, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 0 C for 0.1 to 10 hours. withdrawn
The process of claim 6, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. withdrawn
. canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst is formed; contacting a carbonaceous material with the substrate; and forming a graphene pattern by selectively heat-treating the carbonaceous material in a predetermined pattern shape in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 13, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 13, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 13, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 13, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 ° C for 0.1 to 10 hours. withdrawn
The process of claim 13, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. 4 SI-3 1209-US RD₂₀₀₇₀₆₀ 101USO YPL 0 553USC withdrawn
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene pattern on substrate
Materials described outside the worked examples.
graphene
C
graphitizing catalyst
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D band/G band peak ratio | 0–0.2 dimensionless | C |
D band/G band peak ratio (preferred zero) | ≤ 0.01 dimensionless |
Patent
Atlas literature
Patent
US 9,670,590Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a process of preparing a graphene pattern 10 according to an embodiment of the present invention;
FIG. 2 schematically shows a polymer coated on a graphitizing catalyst;
FIG. 3 schematically shows a structure of graphene formed on a graphitizing catalyst;
FIG. 4 schematically shows a process of preparing a graphene pattern 15 according to an embodiment of the present invention;
FIG. 5 schematically shows a stack of polymers formed on the graphitizing catalyst and having a hydrophilic part and a hydrophobic part;
FIG. 6 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention; 20
FIG. 7 schematically shows a process of preparing a graphene pattern according to an embodiment of the present invention;
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene pattern comprising: 1-300 layers of graphene, which is a polycyclic aromatic molecule in which a plurality of carbon atoms are covalently bound to each other, wherein the graphene is disposed on at least one surface of a substrate, wherein the graphene is patterned, and having a single crystalline structure wherein a D band/G band peak ratio is 0. 01 greater than 0 and equal to or less than 0.2, when measured in a Raman spectrum of the graphene.
The graphene pattern of claim 1, having 1-60 layers of graphene.
The graphene pattern of claim 1, further comprising a graphitizing catalyst interposed between the substrate and the graphene.
canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst pattern is formed; contacting a carbonaceous material with the substrate on which the graphene pattern is formed; and forming graphene on the graphitizing catalyst pattern through heat-treatment in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 6, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 6, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 6, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 6, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 0 C for 0.1 to 10 hours. withdrawn
The process of claim 6, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. withdrawn
. canceled
A process of preparing a graphene pattern, the process comprising: preparing a substrate on at least one surface of which a graphitizing catalyst is formed; contacting a carbonaceous material with the substrate; and forming a graphene pattern by selectively heat-treating the carbonaceous material in a predetermined pattern shape in an inert or reductive atmosphere, wherein the carbonaceous material is a carbon-containing polymer, a gaseous carbonaceous material or a liquid carbonaceous material, and wherein the carbon-containing polymer comprises at least one polymerizable functional group capable of forming a carbon-carbon double bond or triple bond. withdrawn
The process of claim 13, wherein the graphitizing catalyst has a single crystalline structure. withdrawn
The process of claim 13, wherein the contacting the carbonaceous material with the substrate is performed by: (a) coating a carbon-containing polymer as a carbonaceous material on the substrate on which the pattern is formed; (b) introducing a gaseous carbonaceous material as a carbonaceous material onto the substrate on which the pattern is formed; or (c) immersing the substrate on which the pattern is formed in a liquid carbonaceous material as a carbonaceous material and pre-heat-treating the resultant. withdrawn
The process of claim 13, wherein the graphitizing catalyst is at least one selected from the group consisting of Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V and Zr. withdrawn
The process of claim 13, wherein the heat-treatment is performed at a temperature in the range of 400 to 2,000 ° C for 0.1 to 10 hours. withdrawn
The process of claim 13, further comprising removing the graphitizing catalyst by an acid-treatment after the heat-treatment. 4 SI-3 1209-US RD₂₀₀₇₀₆₀ 101USO YPL 0 553USC withdrawn
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene pattern on substrate
Materials described outside the worked examples.
graphene
C
graphitizing catalyst
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a scanning electron microscope (SEM) image of a graphene structure prepared according to Example 4;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
D band/G band peak ratio | 0–0.2 dimensionless | C |
D band/G band peak ratio (preferred zero) | ≤ 0.01 dimensionless |
carbonaceous material
substrate
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
electron mobility of graphene (background reference) | 20000–50000 cm2/V·s | C |
Duration | 600–86400 s | — |
Duration | 0.1–10 hours | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 400–2000 °C | — |
carbonaceous material
substrate
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
electron mobility of graphene (background reference) | 20000–50000 cm2/V·s | C |
Duration | 600–86400 s | — |
Duration | 0.1–10 hours | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 400–2000 °C | — |
carbonaceous material
substrate
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
electron mobility of graphene (background reference) | 20000–50000 cm2/V·s | C |
Duration | 600–86400 s | — |
Duration | 0.1–10 hours | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 400–2000 °C | — |
carbonaceous material
substrate
FIG. 9 is a SEM image of a silicon substrate structure on which Ni particles 25 prepared according to Example 4 are coated; and
FIG. 10 is a SEM image of a ZnO wire structure on which Ni particles prepared according to Example 4 are coated.
electron mobility of graphene (background reference) | 20000–50000 cm2/V·s | C |
Duration | 600–86400 s | — |
Duration | 0.1–10 hours | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 24 hours | — |
Temperature | 400–2000 °C | — |