Patent
US 10,804,480GRAPHENE LAMINATE AND PREPARATION METHOD THEREFOR
Kilwon CHO
US
Copyright © 2026 Matter42. All rights reserved.
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US 10,804,480Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a graphene laminate according to the present invention. [0048] Below is a description of the graphene laminate of the present …
FIG. 2, the method of manufacturing the graphene laminate of the present invention is described below. [0060] First, a graphene oxide solution is prepared …
FIG. 3, the manufacturing process and structure of the organic thin film transistor including the graphene laminate of the present invention as source and drain …
FIG. 4. [00118] [00119] Preparation Example 2: Preparation of amino-group- modified graphene [00120] The aminoethyl group-bonded graphene oxide obtained in …
FIG. 5. [00122] [00123] Preparation Example 3: Preparation of aminoethyl group- bonded graphene oxide after modification with carboxyl group [00124] A graphene …
FIG. 6. [00127] [00128] Example 1: Formation of graphene laminate [00129] The graphene oxide obtained in Preparation Example 1 was dispersed in water to give a …
FIG. 7. [00151] [00152] Device Example 2: Manufacture of organic thin film transistor [00153] An organic thin film transistor was manufactured in the same manner …
FIG. 8. The graphene was seen to be transferred onto the substrate having the graphene layer containing the electron- donating functional group formed thereon. …
FIG. 9 shows the results of analysis of XPS (X-ray Photoelectron Spectroscopy) of amino-group-modified graphene in the laminates obtained in Examples 1 to 3; …
FIG. 10 shows the results of analysis of XPS of graphene or graphene oxide obtained in Comparative Examples 2 and 3; [0038]
FIGS. 11 and 12, the graphene oxide of Comparative Example 1 was allowed to p-dope the graphene by 0.43 eV, whereas the amino-group-modified graphene oxide …
FIG. 12 shows the results of analysis of UPS of the graphene laminate or graphene of Examples 1 and 2 and Comparative Example 1. [00178] Here, the work …
FIG. 13 shows the results of analysis of electrical properties of the graphene laminate or the gold-deposited graphene laminate of Example 3 and Comparative …
FIG. 14 shows power output properties and transfer properties of organic thin film transistors manufactured in Device Example 2 and Comparative Device Example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene laminate, comprising: a functionalized graphene layer containing an electron-donating functional group and a graphene layer, wherein the graphene layer is functionalized by the electron-donating functional group to form the functionalized graphene layer; and a second graphene layer disposed on the functionalized graphene layer and configured to include graphene, wherein the second graphene layer is in direct contact with the functionalized graphene layer such that the second graphene layer is n-doped with the functionalized graphene layer. Currently amended
The graphene laminate of claim 1, wherein the electron-donating functional group is at least one selected from the group consisting of an amino group, a C 1 to C 10 aminoalkyl group, and a C₂ to C 10 methoxyalkyl group. Original
The graphene laminate of claim 1, wherein the functionalized graphene layer includes single-layer or multilayer graphene. Previously presented
The electronic device of claim 1 9, wherein a film transistor includes the graphene laminate. of claim 1. Original of claim 17. Original the electronic device is any one selected from solar cell, an organic light- emitting diode, and source or drain electrode of the organic thin Original
A method of manufacturing a graphene laminate, comprising: preparing a graphene oxide solution (step a); mixing the graphene oxide solution with a compound containing an electron-donating functional group, thus obtaining a graphene solution containing the electron-donating functional group (step b); coating a substrate with the graphene solution containing the electron-donating functional group, thus forming a graphene layer containing the electron-donating functional group (step c); and stacking graphene on the graphene layer containing the electron-donating functional group, thus forming an n-doped graphene layer (step d). Withdrawn
The method of claim 6, wherein the compound containing the electron- donating functional group is at least one selected from the group consisting of alkylene diamine, methoxy alkylamine, and dimethylamino alkylamine. Withdrawn
The method of claim 6, further comprising preparing a carboxylated graphene oxide solution by reacting the graphene oxide solution with an acid (step a'), after step a. Withdrawn
The method of claim 6, further comprising reducing the graphene layer containing the electron-donating functional group (step c'), after step c. Withdrawn
The method of claim 6, wherein a solvent included in the graphene oxide solution is any one selected from the group consisting of water, dimethylformamide, and N- methylpyrrolidone. Withdrawn
An electrode, including the graphene laminate
An electronic device, including the electrode
1 9. The electronic device of claim 18, wherein among an organic thin film transistor, an organic an organic photodetector. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Preparation of amino-group-modified graphene (first graphene layer with electron-donating amino functional group bonded via amide bonding to graphene oxide). Process shown in FIG. 4.
3 materials1 process step
Preparation of amino-group-modified graphene using a second synthetic route. Process shown in FIG. 5.
3 materials1 process step
Preparation of amino-group-modified graphene using a third synthetic route. Process shown in FIG. 6.
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 1 as the first graphene layer, with CVD graphene stacked on top as the second (n-doped) graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 11, FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 2 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 3 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and electrical properties (FIG. 13).
3 materials
Manufacture of organic thin film transistor including the graphene laminate as electrode. Side cross-sectional view shown in FIG. 7.
3 materials
Organic thin film transistor with graphene laminate electrode; power output and transfer properties shown in FIG. 14 and compared to Comparative Device Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminate
electrode including graphene laminate
electronic device (organic thin film transistor/organic solar cell/OLED/organic photodetector) including graphene laminate electrode
Materials described outside the worked examples.
C₁ to C₁₀ aminoalkyl group
C₂ to C₁₀ methoxyalkyl group
alkylene diamine (C₁ to C₁₀)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 70–300 °C | — |
Temperature | 80–200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,804,480Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a graphene laminate according to the present invention. [0048] Below is a description of the graphene laminate of the present …
FIG. 2, the method of manufacturing the graphene laminate of the present invention is described below. [0060] First, a graphene oxide solution is prepared …
FIG. 3, the manufacturing process and structure of the organic thin film transistor including the graphene laminate of the present invention as source and drain …
FIG. 4. [00118] [00119] Preparation Example 2: Preparation of amino-group- modified graphene [00120] The aminoethyl group-bonded graphene oxide obtained in …
FIG. 5. [00122] [00123] Preparation Example 3: Preparation of aminoethyl group- bonded graphene oxide after modification with carboxyl group [00124] A graphene …
FIG. 6. [00127] [00128] Example 1: Formation of graphene laminate [00129] The graphene oxide obtained in Preparation Example 1 was dispersed in water to give a …
FIG. 7. [00151] [00152] Device Example 2: Manufacture of organic thin film transistor [00153] An organic thin film transistor was manufactured in the same manner …
FIG. 8. The graphene was seen to be transferred onto the substrate having the graphene layer containing the electron- donating functional group formed thereon. …
FIG. 9 shows the results of analysis of XPS (X-ray Photoelectron Spectroscopy) of amino-group-modified graphene in the laminates obtained in Examples 1 to 3; …
FIG. 10 shows the results of analysis of XPS of graphene or graphene oxide obtained in Comparative Examples 2 and 3; [0038]
FIGS. 11 and 12, the graphene oxide of Comparative Example 1 was allowed to p-dope the graphene by 0.43 eV, whereas the amino-group-modified graphene oxide …
FIG. 12 shows the results of analysis of UPS of the graphene laminate or graphene of Examples 1 and 2 and Comparative Example 1. [00178] Here, the work …
FIG. 13 shows the results of analysis of electrical properties of the graphene laminate or the gold-deposited graphene laminate of Example 3 and Comparative …
FIG. 14 shows power output properties and transfer properties of organic thin film transistors manufactured in Device Example 2 and Comparative Device Example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene laminate, comprising: a functionalized graphene layer containing an electron-donating functional group and a graphene layer, wherein the graphene layer is functionalized by the electron-donating functional group to form the functionalized graphene layer; and a second graphene layer disposed on the functionalized graphene layer and configured to include graphene, wherein the second graphene layer is in direct contact with the functionalized graphene layer such that the second graphene layer is n-doped with the functionalized graphene layer. Currently amended
The graphene laminate of claim 1, wherein the electron-donating functional group is at least one selected from the group consisting of an amino group, a C 1 to C 10 aminoalkyl group, and a C₂ to C 10 methoxyalkyl group. Original
The graphene laminate of claim 1, wherein the functionalized graphene layer includes single-layer or multilayer graphene. Previously presented
The electronic device of claim 1 9, wherein a film transistor includes the graphene laminate. of claim 1. Original of claim 17. Original the electronic device is any one selected from solar cell, an organic light- emitting diode, and source or drain electrode of the organic thin Original
A method of manufacturing a graphene laminate, comprising: preparing a graphene oxide solution (step a); mixing the graphene oxide solution with a compound containing an electron-donating functional group, thus obtaining a graphene solution containing the electron-donating functional group (step b); coating a substrate with the graphene solution containing the electron-donating functional group, thus forming a graphene layer containing the electron-donating functional group (step c); and stacking graphene on the graphene layer containing the electron-donating functional group, thus forming an n-doped graphene layer (step d). Withdrawn
The method of claim 6, wherein the compound containing the electron- donating functional group is at least one selected from the group consisting of alkylene diamine, methoxy alkylamine, and dimethylamino alkylamine. Withdrawn
The method of claim 6, further comprising preparing a carboxylated graphene oxide solution by reacting the graphene oxide solution with an acid (step a'), after step a. Withdrawn
The method of claim 6, further comprising reducing the graphene layer containing the electron-donating functional group (step c'), after step c. Withdrawn
The method of claim 6, wherein a solvent included in the graphene oxide solution is any one selected from the group consisting of water, dimethylformamide, and N- methylpyrrolidone. Withdrawn
An electrode, including the graphene laminate
An electronic device, including the electrode
1 9. The electronic device of claim 18, wherein among an organic thin film transistor, an organic an organic photodetector. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Preparation of amino-group-modified graphene (first graphene layer with electron-donating amino functional group bonded via amide bonding to graphene oxide). Process shown in FIG. 4.
3 materials1 process step
Preparation of amino-group-modified graphene using a second synthetic route. Process shown in FIG. 5.
3 materials1 process step
Preparation of amino-group-modified graphene using a third synthetic route. Process shown in FIG. 6.
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 1 as the first graphene layer, with CVD graphene stacked on top as the second (n-doped) graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 11, FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 2 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 3 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and electrical properties (FIG. 13).
3 materials
Manufacture of organic thin film transistor including the graphene laminate as electrode. Side cross-sectional view shown in FIG. 7.
3 materials
Organic thin film transistor with graphene laminate electrode; power output and transfer properties shown in FIG. 14 and compared to Comparative Device Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminate
electrode including graphene laminate
electronic device (organic thin film transistor/organic solar cell/OLED/organic photodetector) including graphene laminate electrode
Materials described outside the worked examples.
C₁ to C₁₀ aminoalkyl group
C₂ to C₁₀ methoxyalkyl group
alkylene diamine (C₁ to C₁₀)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 70–300 °C | — |
Temperature | 80–200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,804,480Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a graphene laminate according to the present invention. [0048] Below is a description of the graphene laminate of the present …
FIG. 2, the method of manufacturing the graphene laminate of the present invention is described below. [0060] First, a graphene oxide solution is prepared …
FIG. 3, the manufacturing process and structure of the organic thin film transistor including the graphene laminate of the present invention as source and drain …
FIG. 4. [00118] [00119] Preparation Example 2: Preparation of amino-group- modified graphene [00120] The aminoethyl group-bonded graphene oxide obtained in …
FIG. 5. [00122] [00123] Preparation Example 3: Preparation of aminoethyl group- bonded graphene oxide after modification with carboxyl group [00124] A graphene …
FIG. 6. [00127] [00128] Example 1: Formation of graphene laminate [00129] The graphene oxide obtained in Preparation Example 1 was dispersed in water to give a …
FIG. 7. [00151] [00152] Device Example 2: Manufacture of organic thin film transistor [00153] An organic thin film transistor was manufactured in the same manner …
FIG. 8. The graphene was seen to be transferred onto the substrate having the graphene layer containing the electron- donating functional group formed thereon. …
FIG. 9 shows the results of analysis of XPS (X-ray Photoelectron Spectroscopy) of amino-group-modified graphene in the laminates obtained in Examples 1 to 3; …
FIG. 10 shows the results of analysis of XPS of graphene or graphene oxide obtained in Comparative Examples 2 and 3; [0038]
FIGS. 11 and 12, the graphene oxide of Comparative Example 1 was allowed to p-dope the graphene by 0.43 eV, whereas the amino-group-modified graphene oxide …
FIG. 12 shows the results of analysis of UPS of the graphene laminate or graphene of Examples 1 and 2 and Comparative Example 1. [00178] Here, the work …
FIG. 13 shows the results of analysis of electrical properties of the graphene laminate or the gold-deposited graphene laminate of Example 3 and Comparative …
FIG. 14 shows power output properties and transfer properties of organic thin film transistors manufactured in Device Example 2 and Comparative Device Example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene laminate, comprising: a functionalized graphene layer containing an electron-donating functional group and a graphene layer, wherein the graphene layer is functionalized by the electron-donating functional group to form the functionalized graphene layer; and a second graphene layer disposed on the functionalized graphene layer and configured to include graphene, wherein the second graphene layer is in direct contact with the functionalized graphene layer such that the second graphene layer is n-doped with the functionalized graphene layer. Currently amended
The graphene laminate of claim 1, wherein the electron-donating functional group is at least one selected from the group consisting of an amino group, a C 1 to C 10 aminoalkyl group, and a C₂ to C 10 methoxyalkyl group. Original
The graphene laminate of claim 1, wherein the functionalized graphene layer includes single-layer or multilayer graphene. Previously presented
The electronic device of claim 1 9, wherein a film transistor includes the graphene laminate. of claim 1. Original of claim 17. Original the electronic device is any one selected from solar cell, an organic light- emitting diode, and source or drain electrode of the organic thin Original
A method of manufacturing a graphene laminate, comprising: preparing a graphene oxide solution (step a); mixing the graphene oxide solution with a compound containing an electron-donating functional group, thus obtaining a graphene solution containing the electron-donating functional group (step b); coating a substrate with the graphene solution containing the electron-donating functional group, thus forming a graphene layer containing the electron-donating functional group (step c); and stacking graphene on the graphene layer containing the electron-donating functional group, thus forming an n-doped graphene layer (step d). Withdrawn
The method of claim 6, wherein the compound containing the electron- donating functional group is at least one selected from the group consisting of alkylene diamine, methoxy alkylamine, and dimethylamino alkylamine. Withdrawn
The method of claim 6, further comprising preparing a carboxylated graphene oxide solution by reacting the graphene oxide solution with an acid (step a'), after step a. Withdrawn
The method of claim 6, further comprising reducing the graphene layer containing the electron-donating functional group (step c'), after step c. Withdrawn
The method of claim 6, wherein a solvent included in the graphene oxide solution is any one selected from the group consisting of water, dimethylformamide, and N- methylpyrrolidone. Withdrawn
An electrode, including the graphene laminate
An electronic device, including the electrode
1 9. The electronic device of claim 18, wherein among an organic thin film transistor, an organic an organic photodetector. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Preparation of amino-group-modified graphene (first graphene layer with electron-donating amino functional group bonded via amide bonding to graphene oxide). Process shown in FIG. 4.
3 materials1 process step
Preparation of amino-group-modified graphene using a second synthetic route. Process shown in FIG. 5.
3 materials1 process step
Preparation of amino-group-modified graphene using a third synthetic route. Process shown in FIG. 6.
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 1 as the first graphene layer, with CVD graphene stacked on top as the second (n-doped) graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 11, FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 2 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 3 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and electrical properties (FIG. 13).
3 materials
Manufacture of organic thin film transistor including the graphene laminate as electrode. Side cross-sectional view shown in FIG. 7.
3 materials
Organic thin film transistor with graphene laminate electrode; power output and transfer properties shown in FIG. 14 and compared to Comparative Device Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminate
electrode including graphene laminate
electronic device (organic thin film transistor/organic solar cell/OLED/organic photodetector) including graphene laminate electrode
Materials described outside the worked examples.
C₁ to C₁₀ aminoalkyl group
C₂ to C₁₀ methoxyalkyl group
alkylene diamine (C₁ to C₁₀)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 70–300 °C | — |
Temperature | 80–200 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,804,480Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 schematically shows a graphene laminate according to the present invention. [0048] Below is a description of the graphene laminate of the present …
FIG. 2, the method of manufacturing the graphene laminate of the present invention is described below. [0060] First, a graphene oxide solution is prepared …
FIG. 3, the manufacturing process and structure of the organic thin film transistor including the graphene laminate of the present invention as source and drain …
FIG. 4. [00118] [00119] Preparation Example 2: Preparation of amino-group- modified graphene [00120] The aminoethyl group-bonded graphene oxide obtained in …
FIG. 5. [00122] [00123] Preparation Example 3: Preparation of aminoethyl group- bonded graphene oxide after modification with carboxyl group [00124] A graphene …
FIG. 6. [00127] [00128] Example 1: Formation of graphene laminate [00129] The graphene oxide obtained in Preparation Example 1 was dispersed in water to give a …
FIG. 7. [00151] [00152] Device Example 2: Manufacture of organic thin film transistor [00153] An organic thin film transistor was manufactured in the same manner …
FIG. 8. The graphene was seen to be transferred onto the substrate having the graphene layer containing the electron- donating functional group formed thereon. …
FIG. 9 shows the results of analysis of XPS (X-ray Photoelectron Spectroscopy) of amino-group-modified graphene in the laminates obtained in Examples 1 to 3; …
FIG. 10 shows the results of analysis of XPS of graphene or graphene oxide obtained in Comparative Examples 2 and 3; [0038]
FIGS. 11 and 12, the graphene oxide of Comparative Example 1 was allowed to p-dope the graphene by 0.43 eV, whereas the amino-group-modified graphene oxide …
FIG. 12 shows the results of analysis of UPS of the graphene laminate or graphene of Examples 1 and 2 and Comparative Example 1. [00178] Here, the work …
FIG. 13 shows the results of analysis of electrical properties of the graphene laminate or the gold-deposited graphene laminate of Example 3 and Comparative …
FIG. 14 shows power output properties and transfer properties of organic thin film transistors manufactured in Device Example 2 and Comparative Device Example …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene laminate, comprising: a functionalized graphene layer containing an electron-donating functional group and a graphene layer, wherein the graphene layer is functionalized by the electron-donating functional group to form the functionalized graphene layer; and a second graphene layer disposed on the functionalized graphene layer and configured to include graphene, wherein the second graphene layer is in direct contact with the functionalized graphene layer such that the second graphene layer is n-doped with the functionalized graphene layer. Currently amended
The graphene laminate of claim 1, wherein the electron-donating functional group is at least one selected from the group consisting of an amino group, a C 1 to C 10 aminoalkyl group, and a C₂ to C 10 methoxyalkyl group. Original
The graphene laminate of claim 1, wherein the functionalized graphene layer includes single-layer or multilayer graphene. Previously presented
The electronic device of claim 1 9, wherein a film transistor includes the graphene laminate. of claim 1. Original of claim 17. Original the electronic device is any one selected from solar cell, an organic light- emitting diode, and source or drain electrode of the organic thin Original
A method of manufacturing a graphene laminate, comprising: preparing a graphene oxide solution (step a); mixing the graphene oxide solution with a compound containing an electron-donating functional group, thus obtaining a graphene solution containing the electron-donating functional group (step b); coating a substrate with the graphene solution containing the electron-donating functional group, thus forming a graphene layer containing the electron-donating functional group (step c); and stacking graphene on the graphene layer containing the electron-donating functional group, thus forming an n-doped graphene layer (step d). Withdrawn
The method of claim 6, wherein the compound containing the electron- donating functional group is at least one selected from the group consisting of alkylene diamine, methoxy alkylamine, and dimethylamino alkylamine. Withdrawn
The method of claim 6, further comprising preparing a carboxylated graphene oxide solution by reacting the graphene oxide solution with an acid (step a'), after step a. Withdrawn
The method of claim 6, further comprising reducing the graphene layer containing the electron-donating functional group (step c'), after step c. Withdrawn
The method of claim 6, wherein a solvent included in the graphene oxide solution is any one selected from the group consisting of water, dimethylformamide, and N- methylpyrrolidone. Withdrawn
An electrode, including the graphene laminate
An electronic device, including the electrode
1 9. The electronic device of claim 18, wherein among an organic thin film transistor, an organic an organic photodetector. Original
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Preparation of amino-group-modified graphene (first graphene layer with electron-donating amino functional group bonded via amide bonding to graphene oxide). Process shown in FIG. 4.
3 materials1 process step
Preparation of amino-group-modified graphene using a second synthetic route. Process shown in FIG. 5.
3 materials1 process step
Preparation of amino-group-modified graphene using a third synthetic route. Process shown in FIG. 6.
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 1 as the first graphene layer, with CVD graphene stacked on top as the second (n-doped) graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 11, FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 2 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and UPS (FIG. 12).
3 materials1 process step
Fabrication of graphene laminate using amino-group-modified graphene from Preparation Example 3 as the first graphene layer. Characterized by FESEM (FIG. 8), XPS (FIG. 9), and electrical properties (FIG. 13).
3 materials
Manufacture of organic thin film transistor including the graphene laminate as electrode. Side cross-sectional view shown in FIG. 7.
3 materials
Organic thin film transistor with graphene laminate electrode; power output and transfer properties shown in FIG. 14 and compared to Comparative Device Example 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminate
electrode including graphene laminate
electronic device (organic thin film transistor/organic solar cell/OLED/organic photodetector) including graphene laminate electrode
Materials described outside the worked examples.
C₁ to C₁₀ aminoalkyl group
C₂ to C₁₀ methoxyalkyl group
alkylene diamine (C₁ to C₁₀)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 70–300 °C | — |
Temperature | 80–200 °C |
Related documents with shared materials, methods, properties, or citations.
methoxy alkylamine
dimethylamino alkylamine
carboxylated graphene oxide
hydrogen halide
dicarboxylic acid
hydrazine
N₂H₄
hydrazine monohydrate
N₂H4·H₂O
dimethylhydrazine
water
H₂O
dimethylformamide
DMF
N-methylpyrrolidone
NMP
carbodiimide derivative (EDC: N-ethyl-N'-(3-dimethylaminopropyl)carbodiimide methiodide)
thionyl chloride
SOCl₂
| — |
Temperature | 90–150 °C | — |
Thickness | 0.001 cm | — |
methoxy alkylamine
dimethylamino alkylamine
carboxylated graphene oxide
hydrogen halide
dicarboxylic acid
hydrazine
N₂H₄
hydrazine monohydrate
N₂H4·H₂O
dimethylhydrazine
water
H₂O
dimethylformamide
DMF
N-methylpyrrolidone
NMP
carbodiimide derivative (EDC: N-ethyl-N'-(3-dimethylaminopropyl)carbodiimide methiodide)
thionyl chloride
SOCl₂
| — |
Temperature | 90–150 °C | — |
Thickness | 0.001 cm | — |
methoxy alkylamine
dimethylamino alkylamine
carboxylated graphene oxide
hydrogen halide
dicarboxylic acid
hydrazine
N₂H₄
hydrazine monohydrate
N₂H4·H₂O
dimethylhydrazine
water
H₂O
dimethylformamide
DMF
N-methylpyrrolidone
NMP
carbodiimide derivative (EDC: N-ethyl-N'-(3-dimethylaminopropyl)carbodiimide methiodide)
thionyl chloride
SOCl₂
| — |
Temperature | 90–150 °C | — |
Thickness | 0.001 cm | — |
methoxy alkylamine
dimethylamino alkylamine
carboxylated graphene oxide
hydrogen halide
dicarboxylic acid
hydrazine
N₂H₄
hydrazine monohydrate
N₂H4·H₂O
dimethylhydrazine
water
H₂O
dimethylformamide
DMF
N-methylpyrrolidone
NMP
carbodiimide derivative (EDC: N-ethyl-N'-(3-dimethylaminopropyl)carbodiimide methiodide)
thionyl chloride
SOCl₂
| — |
Temperature | 90–150 °C | — |
Thickness | 0.001 cm | — |