Patent
US 8,877,340GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE
Jack O. Chu
US
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US 8,877,340Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer according to a first …
FIG. 3 is a vertical cross-sectional view of the first exemplary structure after formation of a graphene layer according to the first embodiment of the present …
FIG. 4 is a vertical cross-sectional view of a second exemplary structure including a semiconductor substrate and a single crystalline semiconductor-carbon …
FIG. 5 is a vertical cross-sectional view of the second exemplary structure after formation of a graphene layer according to the second embodiment of the …
FIG. 6 is a low energy electron diffraction (LEED) image of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. …
FIG. 7 is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal symmetry. …
FIGS. 8A-8C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 9A is an image from a height scan of a (100) surface of a silicon carbide layer grown on Si (100) and having a cubic crystal symmetry over an area of 20 …
FIG. 10 A and lO B were concurrently generated by the same scan of the AFM probe, but the data was subsequently processed to generate the height scan of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene layer including at least one graphene monolayer, said method comprising forming a graphene layer by evaporating semiconductor atoms selective to carbon atoms from a crystallographic semiconductor surface having a non- hexagonal symmetry that is different from a symmetry of a (111) plane of [[a]] any cubic crystal structure.
The method of Claim 1, wherein said crystallographic semiconductor surface has a rectangular symmetry.
The method of Claim 1, wherein said crystallographic semiconductor surface is a surface of a crystalline semiconductor carbide layer.
The method of Claim 1, wherein said non-hexagonal symmetry, rectangular symmetry, and tetragonal
The method of Claim 1, wherein said non-hexagona symmetry and rectangular symmetry.
The method of Claim 1, wherein said non-hexagonal 05\24971\A M END\24971 am 3 doc layer is formed by an anneal that converts a carbide layer into said graphene layer. 12.-20. symmetry is selected from cubic symmetry. l symmetry is selected from cubic symmetry is cubic symmetry. 4 I \IBM\ 1
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
crystallographic semiconductor surface with non-hexagonal symmetry
crystalline semiconductor carbide layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,877,340Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer according to a first …
FIG. 3 is a vertical cross-sectional view of the first exemplary structure after formation of a graphene layer according to the first embodiment of the present …
FIG. 4 is a vertical cross-sectional view of a second exemplary structure including a semiconductor substrate and a single crystalline semiconductor-carbon …
FIG. 5 is a vertical cross-sectional view of the second exemplary structure after formation of a graphene layer according to the second embodiment of the …
FIG. 6 is a low energy electron diffraction (LEED) image of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. …
FIG. 7 is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal symmetry. …
FIGS. 8A-8C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 9A is an image from a height scan of a (100) surface of a silicon carbide layer grown on Si (100) and having a cubic crystal symmetry over an area of 20 …
FIG. 10 A and lO B were concurrently generated by the same scan of the AFM probe, but the data was subsequently processed to generate the height scan of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene layer including at least one graphene monolayer, said method comprising forming a graphene layer by evaporating semiconductor atoms selective to carbon atoms from a crystallographic semiconductor surface having a non- hexagonal symmetry that is different from a symmetry of a (111) plane of [[a]] any cubic crystal structure.
The method of Claim 1, wherein said crystallographic semiconductor surface has a rectangular symmetry.
The method of Claim 1, wherein said crystallographic semiconductor surface is a surface of a crystalline semiconductor carbide layer.
The method of Claim 1, wherein said non-hexagonal symmetry, rectangular symmetry, and tetragonal
The method of Claim 1, wherein said non-hexagona symmetry and rectangular symmetry.
The method of Claim 1, wherein said non-hexagonal 05\24971\A M END\24971 am 3 doc layer is formed by an anneal that converts a carbide layer into said graphene layer. 12.-20. symmetry is selected from cubic symmetry. l symmetry is selected from cubic symmetry is cubic symmetry. 4 I \IBM\ 1
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
crystallographic semiconductor surface with non-hexagonal symmetry
crystalline semiconductor carbide layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,877,340Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer according to a first …
FIG. 3 is a vertical cross-sectional view of the first exemplary structure after formation of a graphene layer according to the first embodiment of the present …
FIG. 4 is a vertical cross-sectional view of a second exemplary structure including a semiconductor substrate and a single crystalline semiconductor-carbon …
FIG. 5 is a vertical cross-sectional view of the second exemplary structure after formation of a graphene layer according to the second embodiment of the …
FIG. 6 is a low energy electron diffraction (LEED) image of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. …
FIG. 7 is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal symmetry. …
FIGS. 8A-8C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 9A is an image from a height scan of a (100) surface of a silicon carbide layer grown on Si (100) and having a cubic crystal symmetry over an area of 20 …
FIG. 10 A and lO B were concurrently generated by the same scan of the AFM probe, but the data was subsequently processed to generate the height scan of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene layer including at least one graphene monolayer, said method comprising forming a graphene layer by evaporating semiconductor atoms selective to carbon atoms from a crystallographic semiconductor surface having a non- hexagonal symmetry that is different from a symmetry of a (111) plane of [[a]] any cubic crystal structure.
The method of Claim 1, wherein said crystallographic semiconductor surface has a rectangular symmetry.
The method of Claim 1, wherein said crystallographic semiconductor surface is a surface of a crystalline semiconductor carbide layer.
The method of Claim 1, wherein said non-hexagonal symmetry, rectangular symmetry, and tetragonal
The method of Claim 1, wherein said non-hexagona symmetry and rectangular symmetry.
The method of Claim 1, wherein said non-hexagonal 05\24971\A M END\24971 am 3 doc layer is formed by an anneal that converts a carbide layer into said graphene layer. 12.-20. symmetry is selected from cubic symmetry. l symmetry is selected from cubic symmetry is cubic symmetry. 4 I \IBM\ 1
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
crystallographic semiconductor surface with non-hexagonal symmetry
crystalline semiconductor carbide layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,877,340Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating crystallographic structure of alpha silicon carbide, which has a hexagonal crystal structure, and the orientations of a (0001) …
FIG. 2 is a vertical cross-sectional view of a first exemplary structure including a single crystalline semiconductor-carbon alloy layer according to a first …
FIG. 3 is a vertical cross-sectional view of the first exemplary structure after formation of a graphene layer according to the first embodiment of the present …
FIG. 4 is a vertical cross-sectional view of a second exemplary structure including a semiconductor substrate and a single crystalline semiconductor-carbon …
FIG. 5 is a vertical cross-sectional view of the second exemplary structure after formation of a graphene layer according to the second embodiment of the …
FIG. 6 is a low energy electron diffraction (LEED) image of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. …
FIG. 7 is a low energy electron diffraction (LEED) image of a graphene layer on a (0001) surface of a silicon carbide layer having a hexagonal crystal symmetry. …
FIGS. 8A-8C are Raman spectra of a graphene layer on a (100) surface of a silicon carbide layer having a cubic crystal symmetry. Each of the twelve Raman …
FIG. 9A is an image from a height scan of a (100) surface of a silicon carbide layer grown on Si (100) and having a cubic crystal symmetry over an area of 20 …
FIG. 10 A and lO B were concurrently generated by the same scan of the AFM probe, but the data was subsequently processed to generate the height scan of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a graphene layer including at least one graphene monolayer, said method comprising forming a graphene layer by evaporating semiconductor atoms selective to carbon atoms from a crystallographic semiconductor surface having a non- hexagonal symmetry that is different from a symmetry of a (111) plane of [[a]] any cubic crystal structure.
The method of Claim 1, wherein said crystallographic semiconductor surface has a rectangular symmetry.
The method of Claim 1, wherein said crystallographic semiconductor surface is a surface of a crystalline semiconductor carbide layer.
The method of Claim 1, wherein said non-hexagonal symmetry, rectangular symmetry, and tetragonal
The method of Claim 1, wherein said non-hexagona symmetry and rectangular symmetry.
The method of Claim 1, wherein said non-hexagonal 05\24971\A M END\24971 am 3 doc layer is formed by an anneal that converts a carbide layer into said graphene layer. 12.-20. symmetry is selected from cubic symmetry. l symmetry is selected from cubic symmetry is cubic symmetry. 4 I \IBM\ 1
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
crystallographic semiconductor surface with non-hexagonal symmetry
crystalline semiconductor carbide layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 800–2000 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
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crystalline silicon carbide layer
SiC
single crystalline semiconductor layer
single crystalline silicon layer
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Pressure | 1e-7 Torr | — |
Ultra-Confinement of Polaritons in Single Atomic Layer Ag Photonic Quantum Dots