Patent
US 8,524,366GRAPHENE WAFER, METHOD FOR MANUFACTURING THE GRAPHENE WAFER, METHOD FOR RELEASING A GRAPHENE LAYER, AND METHOD FOR MANUFACTURING A GRAPHENE DEVICE
Mitsuhiko Ogihara
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,524,366Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Cu rr ently Amended) A method for manufacturing a graphene wafer comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; [[and]] applying a pulling force on the metal layer to detaeh release the graphene layer from the first substrate; bonding, by intermolecular force, the released graphene layer onto a surface of a second substrate separate from the first substrate, the surface of the second substrate having a surface roughness equal to or less than 3 nm; and or- nto a surf-ae- of- removing the metal layer.
(Cu rr ently Amended) The method according to claim 2, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the fi r st sbta e; and applying a pulling force on the support body to detach the graphene layer from the first substrate.
(Cu rr ently Amended) The method according to claim 2, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film is beig formed on the Si substrate.
The method according to claim 2, the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 2, f u rther comprising pattering the graphene layer after forming the graphene layer on the surface of the first substrate.
The method according to claim 2, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
Claims 6-12. canceled
canceled
canceled
canceled
canceled
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canceled
A graphene wafer comprising a single layer structure of graphene or a multilayer structure of graphene bonded to a first substrate, the single layer structure of graphene and the multilayer structure of graphene being released from a second substrate different from the first substrate. withdrawn
The graphene wafer according to claim 13, wherein the single layer structure of graphene or the multilayer structure of graphene is patterned into a shape different from the substrate of the graphene wafer. withdrawn
(Cu rr ently Amended). A method for manufacturing a graphene device, comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; AMENDMENT 12/801,720 -3- Atty. ref.: MAE 608 applying a pulling force on the metal layer to release the graphene layer from the first substrate; bonding the released graphene layer onto a surface of a second substrate the surface of the second substrate having a surface roughness equal to or less than 3 nm; of removing the metal layer; patterning the graphene layer; and forming an electrode on a surface of the patterned graphene layer.
The method according to claim 15, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the f i st substrate; applying a pulling force on the support body to detach the graphene layer from the first substrate. [[;]] Claim
The method according to claim 15, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film being is formed on the Si substrate.
The method according to claim 15, wherein the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 15, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wafer
graphene device
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
second substrate surface roughness (maximum peak-valley difference by AFM) | ≤ 3 nm | second substrate |
Thickness | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,524,366Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Cu rr ently Amended) A method for manufacturing a graphene wafer comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; [[and]] applying a pulling force on the metal layer to detaeh release the graphene layer from the first substrate; bonding, by intermolecular force, the released graphene layer onto a surface of a second substrate separate from the first substrate, the surface of the second substrate having a surface roughness equal to or less than 3 nm; and or- nto a surf-ae- of- removing the metal layer.
(Cu rr ently Amended) The method according to claim 2, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the fi r st sbta e; and applying a pulling force on the support body to detach the graphene layer from the first substrate.
(Cu rr ently Amended) The method according to claim 2, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film is beig formed on the Si substrate.
The method according to claim 2, the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 2, f u rther comprising pattering the graphene layer after forming the graphene layer on the surface of the first substrate.
The method according to claim 2, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
Claims 6-12. canceled
canceled
canceled
canceled
canceled
canceled
canceled
A graphene wafer comprising a single layer structure of graphene or a multilayer structure of graphene bonded to a first substrate, the single layer structure of graphene and the multilayer structure of graphene being released from a second substrate different from the first substrate. withdrawn
The graphene wafer according to claim 13, wherein the single layer structure of graphene or the multilayer structure of graphene is patterned into a shape different from the substrate of the graphene wafer. withdrawn
(Cu rr ently Amended). A method for manufacturing a graphene device, comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; AMENDMENT 12/801,720 -3- Atty. ref.: MAE 608 applying a pulling force on the metal layer to release the graphene layer from the first substrate; bonding the released graphene layer onto a surface of a second substrate the surface of the second substrate having a surface roughness equal to or less than 3 nm; of removing the metal layer; patterning the graphene layer; and forming an electrode on a surface of the patterned graphene layer.
The method according to claim 15, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the f i st substrate; applying a pulling force on the support body to detach the graphene layer from the first substrate. [[;]] Claim
The method according to claim 15, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film being is formed on the Si substrate.
The method according to claim 15, wherein the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 15, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wafer
graphene device
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
second substrate surface roughness (maximum peak-valley difference by AFM) | ≤ 3 nm | second substrate |
Thickness | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,524,366Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Cu rr ently Amended) A method for manufacturing a graphene wafer comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; [[and]] applying a pulling force on the metal layer to detaeh release the graphene layer from the first substrate; bonding, by intermolecular force, the released graphene layer onto a surface of a second substrate separate from the first substrate, the surface of the second substrate having a surface roughness equal to or less than 3 nm; and or- nto a surf-ae- of- removing the metal layer.
(Cu rr ently Amended) The method according to claim 2, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the fi r st sbta e; and applying a pulling force on the support body to detach the graphene layer from the first substrate.
(Cu rr ently Amended) The method according to claim 2, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film is beig formed on the Si substrate.
The method according to claim 2, the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 2, f u rther comprising pattering the graphene layer after forming the graphene layer on the surface of the first substrate.
The method according to claim 2, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
Claims 6-12. canceled
canceled
canceled
canceled
canceled
canceled
canceled
A graphene wafer comprising a single layer structure of graphene or a multilayer structure of graphene bonded to a first substrate, the single layer structure of graphene and the multilayer structure of graphene being released from a second substrate different from the first substrate. withdrawn
The graphene wafer according to claim 13, wherein the single layer structure of graphene or the multilayer structure of graphene is patterned into a shape different from the substrate of the graphene wafer. withdrawn
(Cu rr ently Amended). A method for manufacturing a graphene device, comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; AMENDMENT 12/801,720 -3- Atty. ref.: MAE 608 applying a pulling force on the metal layer to release the graphene layer from the first substrate; bonding the released graphene layer onto a surface of a second substrate the surface of the second substrate having a surface roughness equal to or less than 3 nm; of removing the metal layer; patterning the graphene layer; and forming an electrode on a surface of the patterned graphene layer.
The method according to claim 15, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the f i st substrate; applying a pulling force on the support body to detach the graphene layer from the first substrate. [[;]] Claim
The method according to claim 15, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film being is formed on the Si substrate.
The method according to claim 15, wherein the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 15, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wafer
graphene device
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
second substrate surface roughness (maximum peak-valley difference by AFM) | ≤ 3 nm | second substrate |
Thickness | ≤ 10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,524,366Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Cu rr ently Amended) A method for manufacturing a graphene wafer comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; [[and]] applying a pulling force on the metal layer to detaeh release the graphene layer from the first substrate; bonding, by intermolecular force, the released graphene layer onto a surface of a second substrate separate from the first substrate, the surface of the second substrate having a surface roughness equal to or less than 3 nm; and or- nto a surf-ae- of- removing the metal layer.
(Cu rr ently Amended) The method according to claim 2, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the fi r st sbta e; and applying a pulling force on the support body to detach the graphene layer from the first substrate.
(Cu rr ently Amended) The method according to claim 2, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film is beig formed on the Si substrate.
The method according to claim 2, the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 2, f u rther comprising pattering the graphene layer after forming the graphene layer on the surface of the first substrate.
The method according to claim 2, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
Claims 6-12. canceled
canceled
canceled
canceled
canceled
canceled
canceled
A graphene wafer comprising a single layer structure of graphene or a multilayer structure of graphene bonded to a first substrate, the single layer structure of graphene and the multilayer structure of graphene being released from a second substrate different from the first substrate. withdrawn
The graphene wafer according to claim 13, wherein the single layer structure of graphene or the multilayer structure of graphene is patterned into a shape different from the substrate of the graphene wafer. withdrawn
(Cu rr ently Amended). A method for manufacturing a graphene device, comprising: forming a graphene layer on a surface of a first substrate; forming a metal layer on a surface of the graphene layer; AMENDMENT 12/801,720 -3- Atty. ref.: MAE 608 applying a pulling force on the metal layer to release the graphene layer from the first substrate; bonding the released graphene layer onto a surface of a second substrate the surface of the second substrate having a surface roughness equal to or less than 3 nm; of removing the metal layer; patterning the graphene layer; and forming an electrode on a surface of the patterned graphene layer.
The method according to claim 15, further comprising: after forming the metal layer on the graphene layer, forming a support body bonding layer on the metal layer; an d-t hen after forming the support body bonding layer on the metal layer, forming a support body on the support body bonding layer; and after forming the metal layer on the f i st substrate; applying a pulling force on the support body to detach the graphene layer from the first substrate. [[;]] Claim
The method according to claim 15, wherein the first substrate is one of an SiC substrate and an Si substrate, wherein when the first substrate is an Si substrate, an SiC thin film being is formed on the Si substrate.
The method according to claim 15, wherein the metal layer contains one or more elements selected from the group consisting of Ti, Ni, Al, Cu, Cr, In and Pd.
The method according to claim 15, wherein the surface roughness is expressed in terms of a maximum difference between a peak of the second substrate and a valley of the second substrate when measured with an atomic force microscope (AFM).
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene wafer
graphene device
Materials described outside the worked examples.
graphene layer
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
second substrate surface roughness (maximum peak-valley difference by AFM) | ≤ 3 nm | second substrate |
Thickness | ≤ 10 nm |
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second substrate
support body bonding layer
support body
SiC substrate
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Si substrate
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metal layer elements (Ti, Ni, Al, Cu, Cr, In, Pd)
epitaxial graphene layer
adhesive metal layer
support body bonding layer (epoxy, urethane, phenol, polyimide, thermosetting, UV-curing, organic coating, solder)
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second substrate
support body bonding layer
support body
SiC substrate
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Si
metal layer elements (Ti, Ni, Al, Cu, Cr, In, Pd)
epitaxial graphene layer
adhesive metal layer
support body bonding layer (epoxy, urethane, phenol, polyimide, thermosetting, UV-curing, organic coating, solder)
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second substrate
support body bonding layer
support body
SiC substrate
SiC
Si substrate
Si
metal layer elements (Ti, Ni, Al, Cu, Cr, In, Pd)
epitaxial graphene layer
adhesive metal layer
support body bonding layer (epoxy, urethane, phenol, polyimide, thermosetting, UV-curing, organic coating, solder)
| — |
second substrate
support body bonding layer
support body
SiC substrate
SiC
Si substrate
Si
metal layer elements (Ti, Ni, Al, Cu, Cr, In, Pd)
epitaxial graphene layer
adhesive metal layer
support body bonding layer (epoxy, urethane, phenol, polyimide, thermosetting, UV-curing, organic coating, solder)
| — |