Patent details
Patent
US 10,562,278Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. After the exfoliation of a n epitaxial grap h ene layer from SiC using Ni as the first adhesive-strained layer (first exfoliation), the exposed …
FIGS. 2a-f: atomic s tructures of representative interlayer-bonded c onfig u rations. F ach frame shows different views of the g raphene bilayer and of the e m …
FIG. 3, where the predicted shear strength of a bilayer gr aphene str u cture is shown as a function of the fraction of covalent s p 3 C-C bonds 1839371vJ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article of m anufacture, comprising: a) a first graphene layer; b) a second graphene layer over the first graphene layer, the second grap h ene layer oriented at a first interlayer twist angle with respect to the first g raphene layer and bonded by interlayer covalent bonds to the first graphene layer; and c) a third graphene layer over the second g raphene layer, the third graphe n e layer oriented at a second interlayer twist angle with respect to the second gr aphene layer and bonded by interlayer covalent bonds to the second graphene layer. 2, The article of claim 1, wherein at least one of the first g raphene layer, the second graphen e layer, and the third graphene layer is a polycrystalline graphene layer.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between 0' an d about 16'.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between about 44 a nd 60 g.
The article of claim 1, wherein the first graphene layer and the second layer each comprise single crystalline graphene comprising a first unique azimuthal orientation and a second unique azimuthal orientation, respectively, and wherein the first interlayer twist angle comprises an angle between the first unique azimuthal orientation and the second unique azimuthal orientation. Previously presented
The article of clai m 3, wherein the first a n d second interlayer tw ist angles are each equal to 0 ', resulting in the formation of a two-dimensional (2D) diamond st ru cture.
A method of making an article, c omprising: a) grow in g a first g raphene layer on a silicon carbide wafer; b) exf o liating the first gr aphe n e layer onto a fi r st transfer layer; c) disposing the first graphene layer and first transfer layer onto a host substrate, so that the first graphene layer is in contact with the host substrate surface; d) removing the first transfer layer; i839371vJ 4682. 1005-001 -14-e) growing a second graphene layer on a silicon carbide wafer; f) exfoliating the second graphene layer onto a second transfer layer; g) disposing the second gr aphene layer a n d second transfer la y er over the f irst g raphene la y er at a first interlayer twist angle with respect to the first graphene layer, so that the second graphene layer is in contact with the first grap h ene layer; h) removing the second transf e r la yer; i) covalently bonding the first and second graphene layers, the bonding involving a fraction of carbon atoms of each of the first and second graphene layers; j) growing a third graphene layer on a silicon carbide wafer; k) ex fo liating the third graphene layer onto a third transfer layer; 1) dispos i ng the third graphene layer and third transfer layer over the s econd grap h ene layer at a second interlayer twist angle with respect to the second g raphene layer, so that the third graphene layer is in contact with the second grap hene layer; in) removing the third transfer layer; and n) covalently bonding the third and second graphene layers, the bonding involving a fraction of carbon atoms of each of the second, and third grap h ene la y ers.
The method of claim 7, wherein the first and second interlayer twist angles are each separately in a range of between about 44 0 a nd 60 g.
The method of claim 7, wherein the covalent bonding includes chemical functionalization of th e graphene layers.
T he method of cla i m 7, wherein the first and second interlayer twist angles are each separately in a range of between 0 0 and about 16'.
The method of claim 13, wherein fluorination includes using a fluor in e plasma.
A multi-layer graphene article comprising at least three graphene layers, each graphene la y er being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.
The article of clai m 15, wherein at l e ast one of the at least three grap h ene layers is a polycrystalline graphene layer.
T he article of clai m 15, wherein the interlayer twist angle is i n a range of between 0 ' and about 1 6'.
T he arti cle of claim 17, wherein the interlayer twist angle is equal to 0 0, resulting in the formation of a two-dimensional (2 1)) diamond structure.
The article of cla im 15, wherein the interlayer twist angle is in a range of between about 44* and 600.
The article of claim 19, wherein the interlayer twist angle is equal to 60 ', resulting in the formation of a two-dimensional (2 D) diamond structure. What is claimed is:
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-layer twist-angle controlled covalently bonded graphene article
multi-layer graphene article with at least three layers
Materials described outside the worked examples.
graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 10,562,278Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. After the exfoliation of a n epitaxial grap h ene layer from SiC using Ni as the first adhesive-strained layer (first exfoliation), the exposed …
FIGS. 2a-f: atomic s tructures of representative interlayer-bonded c onfig u rations. F ach frame shows different views of the g raphene bilayer and of the e m …
FIG. 3, where the predicted shear strength of a bilayer gr aphene str u cture is shown as a function of the fraction of covalent s p 3 C-C bonds 1839371vJ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article of m anufacture, comprising: a) a first graphene layer; b) a second graphene layer over the first graphene layer, the second grap h ene layer oriented at a first interlayer twist angle with respect to the first g raphene layer and bonded by interlayer covalent bonds to the first graphene layer; and c) a third graphene layer over the second g raphene layer, the third graphe n e layer oriented at a second interlayer twist angle with respect to the second gr aphene layer and bonded by interlayer covalent bonds to the second graphene layer. 2, The article of claim 1, wherein at least one of the first g raphene layer, the second graphen e layer, and the third graphene layer is a polycrystalline graphene layer.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between 0' an d about 16'.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between about 44 a nd 60 g.
The article of claim 1, wherein the first graphene layer and the second layer each comprise single crystalline graphene comprising a first unique azimuthal orientation and a second unique azimuthal orientation, respectively, and wherein the first interlayer twist angle comprises an angle between the first unique azimuthal orientation and the second unique azimuthal orientation. Previously presented
The article of clai m 3, wherein the first a n d second interlayer tw ist angles are each equal to 0 ', resulting in the formation of a two-dimensional (2D) diamond st ru cture.
A method of making an article, c omprising: a) grow in g a first g raphene layer on a silicon carbide wafer; b) exf o liating the first gr aphe n e layer onto a fi r st transfer layer; c) disposing the first graphene layer and first transfer layer onto a host substrate, so that the first graphene layer is in contact with the host substrate surface; d) removing the first transfer layer; i839371vJ 4682. 1005-001 -14-e) growing a second graphene layer on a silicon carbide wafer; f) exfoliating the second graphene layer onto a second transfer layer; g) disposing the second gr aphene layer a n d second transfer la y er over the f irst g raphene la y er at a first interlayer twist angle with respect to the first graphene layer, so that the second graphene layer is in contact with the first grap h ene layer; h) removing the second transf e r la yer; i) covalently bonding the first and second graphene layers, the bonding involving a fraction of carbon atoms of each of the first and second graphene layers; j) growing a third graphene layer on a silicon carbide wafer; k) ex fo liating the third graphene layer onto a third transfer layer; 1) dispos i ng the third graphene layer and third transfer layer over the s econd grap h ene layer at a second interlayer twist angle with respect to the second g raphene layer, so that the third graphene layer is in contact with the second grap hene layer; in) removing the third transfer layer; and n) covalently bonding the third and second graphene layers, the bonding involving a fraction of carbon atoms of each of the second, and third grap h ene la y ers.
The method of claim 7, wherein the first and second interlayer twist angles are each separately in a range of between about 44 0 a nd 60 g.
The method of claim 7, wherein the covalent bonding includes chemical functionalization of th e graphene layers.
T he method of cla i m 7, wherein the first and second interlayer twist angles are each separately in a range of between 0 0 and about 16'.
The method of claim 13, wherein fluorination includes using a fluor in e plasma.
A multi-layer graphene article comprising at least three graphene layers, each graphene la y er being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.
The article of clai m 15, wherein at l e ast one of the at least three grap h ene layers is a polycrystalline graphene layer.
T he article of clai m 15, wherein the interlayer twist angle is i n a range of between 0 ' and about 1 6'.
T he arti cle of claim 17, wherein the interlayer twist angle is equal to 0 0, resulting in the formation of a two-dimensional (2 1)) diamond structure.
The article of cla im 15, wherein the interlayer twist angle is in a range of between about 44* and 600.
The article of claim 19, wherein the interlayer twist angle is equal to 60 ', resulting in the formation of a two-dimensional (2 D) diamond structure. What is claimed is:
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-layer twist-angle controlled covalently bonded graphene article
multi-layer graphene article with at least three layers
Materials described outside the worked examples.
graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 10,562,278Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. After the exfoliation of a n epitaxial grap h ene layer from SiC using Ni as the first adhesive-strained layer (first exfoliation), the exposed …
FIGS. 2a-f: atomic s tructures of representative interlayer-bonded c onfig u rations. F ach frame shows different views of the g raphene bilayer and of the e m …
FIG. 3, where the predicted shear strength of a bilayer gr aphene str u cture is shown as a function of the fraction of covalent s p 3 C-C bonds 1839371vJ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article of m anufacture, comprising: a) a first graphene layer; b) a second graphene layer over the first graphene layer, the second grap h ene layer oriented at a first interlayer twist angle with respect to the first g raphene layer and bonded by interlayer covalent bonds to the first graphene layer; and c) a third graphene layer over the second g raphene layer, the third graphe n e layer oriented at a second interlayer twist angle with respect to the second gr aphene layer and bonded by interlayer covalent bonds to the second graphene layer. 2, The article of claim 1, wherein at least one of the first g raphene layer, the second graphen e layer, and the third graphene layer is a polycrystalline graphene layer.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between 0' an d about 16'.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between about 44 a nd 60 g.
The article of claim 1, wherein the first graphene layer and the second layer each comprise single crystalline graphene comprising a first unique azimuthal orientation and a second unique azimuthal orientation, respectively, and wherein the first interlayer twist angle comprises an angle between the first unique azimuthal orientation and the second unique azimuthal orientation. Previously presented
The article of clai m 3, wherein the first a n d second interlayer tw ist angles are each equal to 0 ', resulting in the formation of a two-dimensional (2D) diamond st ru cture.
A method of making an article, c omprising: a) grow in g a first g raphene layer on a silicon carbide wafer; b) exf o liating the first gr aphe n e layer onto a fi r st transfer layer; c) disposing the first graphene layer and first transfer layer onto a host substrate, so that the first graphene layer is in contact with the host substrate surface; d) removing the first transfer layer; i839371vJ 4682. 1005-001 -14-e) growing a second graphene layer on a silicon carbide wafer; f) exfoliating the second graphene layer onto a second transfer layer; g) disposing the second gr aphene layer a n d second transfer la y er over the f irst g raphene la y er at a first interlayer twist angle with respect to the first graphene layer, so that the second graphene layer is in contact with the first grap h ene layer; h) removing the second transf e r la yer; i) covalently bonding the first and second graphene layers, the bonding involving a fraction of carbon atoms of each of the first and second graphene layers; j) growing a third graphene layer on a silicon carbide wafer; k) ex fo liating the third graphene layer onto a third transfer layer; 1) dispos i ng the third graphene layer and third transfer layer over the s econd grap h ene layer at a second interlayer twist angle with respect to the second g raphene layer, so that the third graphene layer is in contact with the second grap hene layer; in) removing the third transfer layer; and n) covalently bonding the third and second graphene layers, the bonding involving a fraction of carbon atoms of each of the second, and third grap h ene la y ers.
The method of claim 7, wherein the first and second interlayer twist angles are each separately in a range of between about 44 0 a nd 60 g.
The method of claim 7, wherein the covalent bonding includes chemical functionalization of th e graphene layers.
T he method of cla i m 7, wherein the first and second interlayer twist angles are each separately in a range of between 0 0 and about 16'.
The method of claim 13, wherein fluorination includes using a fluor in e plasma.
A multi-layer graphene article comprising at least three graphene layers, each graphene la y er being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.
The article of clai m 15, wherein at l e ast one of the at least three grap h ene layers is a polycrystalline graphene layer.
T he article of clai m 15, wherein the interlayer twist angle is i n a range of between 0 ' and about 1 6'.
T he arti cle of claim 17, wherein the interlayer twist angle is equal to 0 0, resulting in the formation of a two-dimensional (2 1)) diamond structure.
The article of cla im 15, wherein the interlayer twist angle is in a range of between about 44* and 600.
The article of claim 19, wherein the interlayer twist angle is equal to 60 ', resulting in the formation of a two-dimensional (2 D) diamond structure. What is claimed is:
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-layer twist-angle controlled covalently bonded graphene article
multi-layer graphene article with at least three layers
Materials described outside the worked examples.
graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 10,562,278Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1A. After the exfoliation of a n epitaxial grap h ene layer from SiC using Ni as the first adhesive-strained layer (first exfoliation), the exposed …
FIGS. 2a-f: atomic s tructures of representative interlayer-bonded c onfig u rations. F ach frame shows different views of the g raphene bilayer and of the e m …
FIG. 3, where the predicted shear strength of a bilayer gr aphene str u cture is shown as a function of the fraction of covalent s p 3 C-C bonds 1839371vJ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An article of m anufacture, comprising: a) a first graphene layer; b) a second graphene layer over the first graphene layer, the second grap h ene layer oriented at a first interlayer twist angle with respect to the first g raphene layer and bonded by interlayer covalent bonds to the first graphene layer; and c) a third graphene layer over the second g raphene layer, the third graphe n e layer oriented at a second interlayer twist angle with respect to the second gr aphene layer and bonded by interlayer covalent bonds to the second graphene layer. 2, The article of claim 1, wherein at least one of the first g raphene layer, the second graphen e layer, and the third graphene layer is a polycrystalline graphene layer.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between 0' an d about 16'.
The article of claim 1, wherein the first and second interlayer twist angles are each separately in a range of between about 44 a nd 60 g.
The article of claim 1, wherein the first graphene layer and the second layer each comprise single crystalline graphene comprising a first unique azimuthal orientation and a second unique azimuthal orientation, respectively, and wherein the first interlayer twist angle comprises an angle between the first unique azimuthal orientation and the second unique azimuthal orientation. Previously presented
The article of clai m 3, wherein the first a n d second interlayer tw ist angles are each equal to 0 ', resulting in the formation of a two-dimensional (2D) diamond st ru cture.
A method of making an article, c omprising: a) grow in g a first g raphene layer on a silicon carbide wafer; b) exf o liating the first gr aphe n e layer onto a fi r st transfer layer; c) disposing the first graphene layer and first transfer layer onto a host substrate, so that the first graphene layer is in contact with the host substrate surface; d) removing the first transfer layer; i839371vJ 4682. 1005-001 -14-e) growing a second graphene layer on a silicon carbide wafer; f) exfoliating the second graphene layer onto a second transfer layer; g) disposing the second gr aphene layer a n d second transfer la y er over the f irst g raphene la y er at a first interlayer twist angle with respect to the first graphene layer, so that the second graphene layer is in contact with the first grap h ene layer; h) removing the second transf e r la yer; i) covalently bonding the first and second graphene layers, the bonding involving a fraction of carbon atoms of each of the first and second graphene layers; j) growing a third graphene layer on a silicon carbide wafer; k) ex fo liating the third graphene layer onto a third transfer layer; 1) dispos i ng the third graphene layer and third transfer layer over the s econd grap h ene layer at a second interlayer twist angle with respect to the second g raphene layer, so that the third graphene layer is in contact with the second grap hene layer; in) removing the third transfer layer; and n) covalently bonding the third and second graphene layers, the bonding involving a fraction of carbon atoms of each of the second, and third grap h ene la y ers.
The method of claim 7, wherein the first and second interlayer twist angles are each separately in a range of between about 44 0 a nd 60 g.
The method of claim 7, wherein the covalent bonding includes chemical functionalization of th e graphene layers.
T he method of cla i m 7, wherein the first and second interlayer twist angles are each separately in a range of between 0 0 and about 16'.
The method of claim 13, wherein fluorination includes using a fluor in e plasma.
A multi-layer graphene article comprising at least three graphene layers, each graphene la y er being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.
The article of clai m 15, wherein at l e ast one of the at least three grap h ene layers is a polycrystalline graphene layer.
T he article of clai m 15, wherein the interlayer twist angle is i n a range of between 0 ' and about 1 6'.
T he arti cle of claim 17, wherein the interlayer twist angle is equal to 0 0, resulting in the formation of a two-dimensional (2 1)) diamond structure.
The article of cla im 15, wherein the interlayer twist angle is in a range of between about 44* and 600.
The article of claim 19, wherein the interlayer twist angle is equal to 60 ', resulting in the formation of a two-dimensional (2 D) diamond structure. What is claimed is:
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-layer twist-angle controlled covalently bonded graphene article
multi-layer graphene article with at least three layers
Materials described outside the worked examples.
graphene
C
silicon carbide wafer
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
hydrogen plasma
H
hydrogen plasma
H
hydrogen plasma
H
hydrogen plasma
H
