Patent
US 9,006,044GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME
Chang-seung Lee
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,006,044Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 L are cross-sectional views illustrating a method of manufacturing a graphene device, according to a non-limiting embodiment; [0042]
FIGS. 2A through 2D are cross-sectional views illustrating a method of forming a structure illustrated in
FIGS. 3A through 3D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0044]
FIG. 4A is a plan view illustrating a planar structure of the graphene device of
FIG. 5 is a plan view illustrating a modified example of
FIGS. 6A through 6D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0048]
FIG. 7A is a plan view illustrating a planar structure of
FIGS. 8A through 8E are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment.
FIGS. 11 through 1 L. The method illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion; and removing an entirety of the first substrate to expose the graphene layer.
The method of claim 1, wherein the forming a device portion comprises forming a source electrode and a drain electrode respectively contacting a first region and a second region of the graphene layer.
The method of claim 1, further comprising: forming a catalyst layer between the first substrate and the graphene layer.
The method of claim 1, further comprising: forming a protection layer covering the device portion on the first substrate before the attaching a second substrate.
The method of claim 1, wherein the attaching a second substrate includes selecting a polymer substrate as the second substrate.
The method of claim 1, further comprising: forming a device layer including a plurality of the device portion on the first substrate;. and separating the plurality of the device portion by patterning the device l ayer. withdrawn
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A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion, the second substrate being a temporary substrate; removing an entirety of the first substrate; attaching a third substrate on the device portion after the removing the first substrate, the device portion being disposed between the second substrate and the third substrate; and removing an entirety of the second substrate from the device portion.
The method of claim 34, wherein the attaching a second substrate onto the device portion includes forming a bonding interface between the device portion and the second substrate, and 6 SVG 13546615.10-14-2014.I₁₉LBAV₂PXXIFW3.CLM32668278.2.1465.127.2216.223.svg 0.32 2.503 Graph Black and white wherein the removing an entirety of the second substrate includes exposing the bonding interface. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–300 nm | — |
Thickness | 100–500 nm |
Patent
Atlas literature
Patent
US 9,006,044Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 L are cross-sectional views illustrating a method of manufacturing a graphene device, according to a non-limiting embodiment; [0042]
FIGS. 2A through 2D are cross-sectional views illustrating a method of forming a structure illustrated in
FIGS. 3A through 3D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0044]
FIG. 4A is a plan view illustrating a planar structure of the graphene device of
FIG. 5 is a plan view illustrating a modified example of
FIGS. 6A through 6D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0048]
FIG. 7A is a plan view illustrating a planar structure of
FIGS. 8A through 8E are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment.
FIGS. 11 through 1 L. The method illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion; and removing an entirety of the first substrate to expose the graphene layer.
The method of claim 1, wherein the forming a device portion comprises forming a source electrode and a drain electrode respectively contacting a first region and a second region of the graphene layer.
The method of claim 1, further comprising: forming a catalyst layer between the first substrate and the graphene layer.
The method of claim 1, further comprising: forming a protection layer covering the device portion on the first substrate before the attaching a second substrate.
The method of claim 1, wherein the attaching a second substrate includes selecting a polymer substrate as the second substrate.
The method of claim 1, further comprising: forming a device layer including a plurality of the device portion on the first substrate;. and separating the plurality of the device portion by patterning the device l ayer. withdrawn
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion, the second substrate being a temporary substrate; removing an entirety of the first substrate; attaching a third substrate on the device portion after the removing the first substrate, the device portion being disposed between the second substrate and the third substrate; and removing an entirety of the second substrate from the device portion.
The method of claim 34, wherein the attaching a second substrate onto the device portion includes forming a bonding interface between the device portion and the second substrate, and 6 SVG 13546615.10-14-2014.I₁₉LBAV₂PXXIFW3.CLM32668278.2.1465.127.2216.223.svg 0.32 2.503 Graph Black and white wherein the removing an entirety of the second substrate includes exposing the bonding interface. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–300 nm | — |
Thickness | 100–500 nm |
Patent
Atlas literature
Patent
US 9,006,044Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 L are cross-sectional views illustrating a method of manufacturing a graphene device, according to a non-limiting embodiment; [0042]
FIGS. 2A through 2D are cross-sectional views illustrating a method of forming a structure illustrated in
FIGS. 3A through 3D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0044]
FIG. 4A is a plan view illustrating a planar structure of the graphene device of
FIG. 5 is a plan view illustrating a modified example of
FIGS. 6A through 6D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0048]
FIG. 7A is a plan view illustrating a planar structure of
FIGS. 8A through 8E are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment.
FIGS. 11 through 1 L. The method illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion; and removing an entirety of the first substrate to expose the graphene layer.
The method of claim 1, wherein the forming a device portion comprises forming a source electrode and a drain electrode respectively contacting a first region and a second region of the graphene layer.
The method of claim 1, further comprising: forming a catalyst layer between the first substrate and the graphene layer.
The method of claim 1, further comprising: forming a protection layer covering the device portion on the first substrate before the attaching a second substrate.
The method of claim 1, wherein the attaching a second substrate includes selecting a polymer substrate as the second substrate.
The method of claim 1, further comprising: forming a device layer including a plurality of the device portion on the first substrate;. and separating the plurality of the device portion by patterning the device l ayer. withdrawn
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion, the second substrate being a temporary substrate; removing an entirety of the first substrate; attaching a third substrate on the device portion after the removing the first substrate, the device portion being disposed between the second substrate and the third substrate; and removing an entirety of the second substrate from the device portion.
The method of claim 34, wherein the attaching a second substrate onto the device portion includes forming a bonding interface between the device portion and the second substrate, and 6 SVG 13546615.10-14-2014.I₁₉LBAV₂PXXIFW3.CLM32668278.2.1465.127.2216.223.svg 0.32 2.503 Graph Black and white wherein the removing an entirety of the second substrate includes exposing the bonding interface. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–300 nm | — |
Thickness | 100–500 nm |
Patent
Atlas literature
Patent
US 9,006,044Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A through 1 L are cross-sectional views illustrating a method of manufacturing a graphene device, according to a non-limiting embodiment; [0042]
FIGS. 2A through 2D are cross-sectional views illustrating a method of forming a structure illustrated in
FIGS. 3A through 3D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0044]
FIG. 4A is a plan view illustrating a planar structure of the graphene device of
FIG. 5 is a plan view illustrating a modified example of
FIGS. 6A through 6D are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment; [0048]
FIG. 7A is a plan view illustrating a planar structure of
FIGS. 8A through 8E are cross-sectional views illustrating another method of manufacturing a graphene device, according to a non-limiting embodiment.
FIGS. 11 through 1 L. The method illustrated in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion; and removing an entirety of the first substrate to expose the graphene layer.
The method of claim 1, wherein the forming a device portion comprises forming a source electrode and a drain electrode respectively contacting a first region and a second region of the graphene layer.
The method of claim 1, further comprising: forming a catalyst layer between the first substrate and the graphene layer.
The method of claim 1, further comprising: forming a protection layer covering the device portion on the first substrate before the attaching a second substrate.
The method of claim 1, wherein the attaching a second substrate includes selecting a polymer substrate as the second substrate.
The method of claim 1, further comprising: forming a device layer including a plurality of the device portion on the first substrate;. and separating the plurality of the device portion by patterning the device l ayer. withdrawn
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of manufacturing a graphene device, the method comprising: forming a graphene layer on a first substrate; forming a device portion on the first substrate, the device portion including the graphene layer; attaching a second substrate onto the device portion, the second substrate being a temporary substrate; removing an entirety of the first substrate; attaching a third substrate on the device portion after the removing the first substrate, the device portion being disposed between the second substrate and the third substrate; and removing an entirety of the second substrate from the device portion.
The method of claim 34, wherein the attaching a second substrate onto the device portion includes forming a bonding interface between the device portion and the second substrate, and 6 SVG 13546615.10-14-2014.I₁₉LBAV₂PXXIFW3.CLM32668278.2.1465.127.2216.223.svg 0.32 2.503 Graph Black and white wherein the removing an entirety of the second substrate includes exposing the bonding interface. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
catalyst layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–300 nm | — |
Thickness | 100–500 nm |
sacrificial layer
| — |
Thickness | 10–30 nm | — |
sacrificial layer
| — |
Thickness | 10–30 nm | — |
sacrificial layer
| — |
Thickness | 10–30 nm | — |
sacrificial layer
| — |
Thickness | 10–30 nm | — |