Patent
US 9,716,220GRAPHENE-BASED TERAHERTZ DEVICES
Yang Wu
26 February 2015·US
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Patent
Atlas literature
Patent
US 9,716,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a graphene-based THz device in accordance with the teachings of the present invention. 3 WO 2015/026298 PCT/SG₂₀₁₄/00
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based terahertz device comprising: a top graphene layer that is formed of 1 to graphenes and has a first electrode s deposited on one edge of the layer; a bottom graphene layer that is formed of 1 to 10 graphenes and has a second electrode deposited on one edge of the layer; and a liquid crystal layer or a piezocrystal layer, 1 to 1000 p m in thickness, disposed between the top graphene layer and the bottom graphene layer, 10 wherein the first electrode and the second electrode are so aligned to prevent short circuit through the liquid crystal layer or the piezocrystal layer, and the top surface of the top graphene layer and the bottom surface of the bottom graphene layer are each covered by a layer of dielectric material.
15 2. The graphene-based terahertz device of claim 1, wherein a liquid crystal layer is disposed between the top graphene layer and the bottom graphene layer.
11 WO 2015/026298 PCT/SG₂₀₁₄/000394
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz device
Materials described outside the worked examples.
graphene
liquid crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Pressure |
Patent
Atlas literature
Patent
US 9,716,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a graphene-based THz device in accordance with the teachings of the present invention. 3 WO 2015/026298 PCT/SG₂₀₁₄/00
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based terahertz device comprising: a top graphene layer that is formed of 1 to graphenes and has a first electrode s deposited on one edge of the layer; a bottom graphene layer that is formed of 1 to 10 graphenes and has a second electrode deposited on one edge of the layer; and a liquid crystal layer or a piezocrystal layer, 1 to 1000 p m in thickness, disposed between the top graphene layer and the bottom graphene layer, 10 wherein the first electrode and the second electrode are so aligned to prevent short circuit through the liquid crystal layer or the piezocrystal layer, and the top surface of the top graphene layer and the bottom surface of the bottom graphene layer are each covered by a layer of dielectric material.
15 2. The graphene-based terahertz device of claim 1, wherein a liquid crystal layer is disposed between the top graphene layer and the bottom graphene layer.
11 WO 2015/026298 PCT/SG₂₀₁₄/000394
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz device
Materials described outside the worked examples.
graphene
liquid crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Pressure |
Patent
Atlas literature
Patent
US 9,716,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a graphene-based THz device in accordance with the teachings of the present invention. 3 WO 2015/026298 PCT/SG₂₀₁₄/00
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based terahertz device comprising: a top graphene layer that is formed of 1 to graphenes and has a first electrode s deposited on one edge of the layer; a bottom graphene layer that is formed of 1 to 10 graphenes and has a second electrode deposited on one edge of the layer; and a liquid crystal layer or a piezocrystal layer, 1 to 1000 p m in thickness, disposed between the top graphene layer and the bottom graphene layer, 10 wherein the first electrode and the second electrode are so aligned to prevent short circuit through the liquid crystal layer or the piezocrystal layer, and the top surface of the top graphene layer and the bottom surface of the bottom graphene layer are each covered by a layer of dielectric material.
15 2. The graphene-based terahertz device of claim 1, wherein a liquid crystal layer is disposed between the top graphene layer and the bottom graphene layer.
11 WO 2015/026298 PCT/SG₂₀₁₄/000394
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz device
Materials described outside the worked examples.
graphene
liquid crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Pressure |
Patent
Atlas literature
Patent
US 9,716,220Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a graphene-based THz device in accordance with the teachings of the present invention. 3 WO 2015/026298 PCT/SG₂₀₁₄/00
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based terahertz device comprising: a top graphene layer that is formed of 1 to graphenes and has a first electrode s deposited on one edge of the layer; a bottom graphene layer that is formed of 1 to 10 graphenes and has a second electrode deposited on one edge of the layer; and a liquid crystal layer or a piezocrystal layer, 1 to 1000 p m in thickness, disposed between the top graphene layer and the bottom graphene layer, 10 wherein the first electrode and the second electrode are so aligned to prevent short circuit through the liquid crystal layer or the piezocrystal layer, and the top surface of the top graphene layer and the bottom surface of the bottom graphene layer are each covered by a layer of dielectric material.
15 2. The graphene-based terahertz device of claim 1, wherein a liquid crystal layer is disposed between the top graphene layer and the bottom graphene layer.
11 WO 2015/026298 PCT/SG₂₀₁₄/000394
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based terahertz device
Materials described outside the worked examples.
graphene
liquid crystal
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 100–2000 nm | — |
Pressure |
piezocrystal
dielectric material
polymer
electrode material (Ti, Au, Cr, Cu, or combination)
dielectric material (glass, silicon, magnesia, sapphire, or polymer)
4'-n-pentyl-4-cyanobiphenyl (5CB)
ionic liquid
ion gel
1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI])
Cr/Au combination
polyimide
polysulfone
polyethersulfone
| 0–8 Torr |
| — |
Voltage | ≤ 1 V | — |
Voltage | ≥ 0.7 V | — |
piezocrystal
dielectric material
polymer
electrode material (Ti, Au, Cr, Cu, or combination)
dielectric material (glass, silicon, magnesia, sapphire, or polymer)
4'-n-pentyl-4-cyanobiphenyl (5CB)
ionic liquid
ion gel
1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI])
Cr/Au combination
polyimide
polysulfone
polyethersulfone
| 0–8 Torr |
| — |
Voltage | ≤ 1 V | — |
Voltage | ≥ 0.7 V | — |
piezocrystal
dielectric material
polymer
electrode material (Ti, Au, Cr, Cu, or combination)
dielectric material (glass, silicon, magnesia, sapphire, or polymer)
4'-n-pentyl-4-cyanobiphenyl (5CB)
ionic liquid
ion gel
1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI])
Cr/Au combination
polyimide
polysulfone
polyethersulfone
| 0–8 Torr |
| — |
Voltage | ≤ 1 V | — |
Voltage | ≥ 0.7 V | — |
piezocrystal
dielectric material
polymer
electrode material (Ti, Au, Cr, Cu, or combination)
dielectric material (glass, silicon, magnesia, sapphire, or polymer)
4'-n-pentyl-4-cyanobiphenyl (5CB)
ionic liquid
ion gel
1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI])
Cr/Au combination
polyimide
polysulfone
polyethersulfone
| 0–8 Torr |
| — |
Voltage | ≤ 1 V | — |
Voltage | ≥ 0.7 V | — |