Patent
US 8,916,851GRAPHENE-BASED DEVICE AND METHODS OF FORMING THE SAME
Kurt Eaton, Kimberly Eaton
2014-12-23·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,916,851Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene-b a sed device, comprising: a first electrode comprising graphene. a second electrode comprising grap he ne, wherein a work function of the first electrode is different from a work function of the second electrode; and a potentia l barrier, wherein the first electrode is physically separated from the second electrode by the potential barrier. previously presented
The graphene -based device of claim 1, wherein at least one selected f ro m the group consisting of the fi r t electrode and the second electrode are doped with at least one atom selected from the group co n sisting of Ni, C o, Pd, Al, Ag, Cu, A u and Pt.
T h e graphene-based devic e of claim 1, further comprising a layer of grap h ene, wherein the potential barrier and at least on e selected from the group consisting of the first electrode and the second electrode are defined within the layer of graphene.
The graphene-based device of claim 1, wherein the potential barrier comprises an insulator.
The graphe n e-based devi c e of claim 1, wherein the potential ba rr ier comprises single-layer graphene. 131 355,473 2 of 1 0 PAGE 3111* RCVD AT 8/131 2014 3:18:23 PM E astem Daylight Time] S VR: WPTO FAX -002/34' DNIS:2 738 300 CSID:503 6 262385 * DURAT ION (mmss):03 -17 SVG 13355473.08-13-2014.HZ₁B₉₆IWPXXIFW4.CLM24672183.2.224.112.2380.169.svg 0.19 7.187 Graph Black and white
The graphene-based device of claim 1, wherein the potential barrier comprises a material having a band gap of at least about 2. 93 eV.
The graphene-based device of claim 1, wherein the potential barrier is an air- gap between the first electrode and the secon i I electrode.
The graph e ne-based device of claim 1, wherein the first electrode is physically separated from the second electrode by the p i t ential barrier at a distance of at least about 0.5 n.
The graphene-based devic e of claim 1, wherein the first electrode and the second electrode directly contact a surface o f a substrate.
The graph e ne-based device of claim 1, wherein at least one selected f ro m the group consisting of the first elect r ode and the second electrode is electrically connected to a voltage source.
The grap h ene-based device of claim 1, wherein first electrode, second electrode and potential barrier are configure d such that the graphene-based device exhibits asymmetric, nonlinear T -V characteristics under application of the voltage bias between the first electrode and the second electrode.
. canceled
A graphene-based device, comprising: a layer of graphene; a first electrode defined within the l aye r of graphene; 13/355,473 3 of 10 PAGE 4 111 'RCVD AT 8 1131 2014 3:18:23 PM [E aste m Daylight Time] * SVR:W -PTOFAX-02/34 DNIS:2 738 300 * CSID:50362623 85' DURATI ON (mm-ss):03.17 08/13/2014 12: 0 9 5036262385 HALL NIMBUS PAGE 0 5/11 a second elec t rode defined within th e same layer of graphene in which the first electrode is defined; and a potential barrier, wherein the f ir st e lectrode is physically separated from the second electrode by the potential barrier, wherein the graphen e -based device i s a two-terminal device.
A m ethod of * orming a graphene-based device, comprising: forming a first electrode comprising graphene; forming a second electrode co n prisi ' g graphene, wherein a work function of the first electrode is different f r om a work function ci f the second electrode; and formi n g a potential barrier, wherein he first electrode is physically separated from the second electrode by the potential barrier. 13/355, 473 4 cf 10 PAGE 5111 RCVD AT 8/1312014 3:18:23 PM [Easte m Day li ght Time]'SV R:W -PTO FAX -00234' DNIS:2 7 383 001 CSID:503 6 262385 ' DURAT ION (mm ss):03 -1 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based device
graphene-based two-terminal device
Materials described outside the worked examples.
graphene
graphene (second electrode)
dopant atoms (Ni, Co, Pd, Al, Ag, Cu, Au, Pt)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
minimum band gap of potential barrier material | 2.93 eV | wide-band-gap barrier material |
Patent
Atlas literature
Patent
US 8,916,851Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene-b a sed device, comprising: a first electrode comprising graphene. a second electrode comprising grap he ne, wherein a work function of the first electrode is different from a work function of the second electrode; and a potentia l barrier, wherein the first electrode is physically separated from the second electrode by the potential barrier. previously presented
The graphene -based device of claim 1, wherein at least one selected f ro m the group consisting of the fi r t electrode and the second electrode are doped with at least one atom selected from the group co n sisting of Ni, C o, Pd, Al, Ag, Cu, A u and Pt.
T h e graphene-based devic e of claim 1, further comprising a layer of grap h ene, wherein the potential barrier and at least on e selected from the group consisting of the first electrode and the second electrode are defined within the layer of graphene.
The graphene-based device of claim 1, wherein the potential barrier comprises an insulator.
The graphe n e-based devi c e of claim 1, wherein the potential ba rr ier comprises single-layer graphene. 131 355,473 2 of 1 0 PAGE 3111* RCVD AT 8/131 2014 3:18:23 PM E astem Daylight Time] S VR: WPTO FAX -002/34' DNIS:2 738 300 CSID:503 6 262385 * DURAT ION (mmss):03 -17 SVG 13355473.08-13-2014.HZ₁B₉₆IWPXXIFW4.CLM24672183.2.224.112.2380.169.svg 0.19 7.187 Graph Black and white
The graphene-based device of claim 1, wherein the potential barrier comprises a material having a band gap of at least about 2. 93 eV.
The graphene-based device of claim 1, wherein the potential barrier is an air- gap between the first electrode and the secon i I electrode.
The graph e ne-based device of claim 1, wherein the first electrode is physically separated from the second electrode by the p i t ential barrier at a distance of at least about 0.5 n.
The graphene-based devic e of claim 1, wherein the first electrode and the second electrode directly contact a surface o f a substrate.
The graph e ne-based device of claim 1, wherein at least one selected f ro m the group consisting of the first elect r ode and the second electrode is electrically connected to a voltage source.
The grap h ene-based device of claim 1, wherein first electrode, second electrode and potential barrier are configure d such that the graphene-based device exhibits asymmetric, nonlinear T -V characteristics under application of the voltage bias between the first electrode and the second electrode.
. canceled
A graphene-based device, comprising: a layer of graphene; a first electrode defined within the l aye r of graphene; 13/355,473 3 of 10 PAGE 4 111 'RCVD AT 8 1131 2014 3:18:23 PM [E aste m Daylight Time] * SVR:W -PTOFAX-02/34 DNIS:2 738 300 * CSID:50362623 85' DURATI ON (mm-ss):03.17 08/13/2014 12: 0 9 5036262385 HALL NIMBUS PAGE 0 5/11 a second elec t rode defined within th e same layer of graphene in which the first electrode is defined; and a potential barrier, wherein the f ir st e lectrode is physically separated from the second electrode by the potential barrier, wherein the graphen e -based device i s a two-terminal device.
A m ethod of * orming a graphene-based device, comprising: forming a first electrode comprising graphene; forming a second electrode co n prisi ' g graphene, wherein a work function of the first electrode is different f r om a work function ci f the second electrode; and formi n g a potential barrier, wherein he first electrode is physically separated from the second electrode by the potential barrier. 13/355, 473 4 cf 10 PAGE 5111 RCVD AT 8/1312014 3:18:23 PM [Easte m Day li ght Time]'SV R:W -PTO FAX -00234' DNIS:2 7 383 001 CSID:503 6 262385 ' DURAT ION (mm ss):03 -1 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based device
graphene-based two-terminal device
Materials described outside the worked examples.
graphene
graphene (second electrode)
dopant atoms (Ni, Co, Pd, Al, Ag, Cu, Au, Pt)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
minimum band gap of potential barrier material | 2.93 eV | wide-band-gap barrier material |
Patent
Atlas literature
Patent
US 8,916,851Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene-b a sed device, comprising: a first electrode comprising graphene. a second electrode comprising grap he ne, wherein a work function of the first electrode is different from a work function of the second electrode; and a potentia l barrier, wherein the first electrode is physically separated from the second electrode by the potential barrier. previously presented
The graphene -based device of claim 1, wherein at least one selected f ro m the group consisting of the fi r t electrode and the second electrode are doped with at least one atom selected from the group co n sisting of Ni, C o, Pd, Al, Ag, Cu, A u and Pt.
T h e graphene-based devic e of claim 1, further comprising a layer of grap h ene, wherein the potential barrier and at least on e selected from the group consisting of the first electrode and the second electrode are defined within the layer of graphene.
The graphene-based device of claim 1, wherein the potential barrier comprises an insulator.
The graphe n e-based devi c e of claim 1, wherein the potential ba rr ier comprises single-layer graphene. 131 355,473 2 of 1 0 PAGE 3111* RCVD AT 8/131 2014 3:18:23 PM E astem Daylight Time] S VR: WPTO FAX -002/34' DNIS:2 738 300 CSID:503 6 262385 * DURAT ION (mmss):03 -17 SVG 13355473.08-13-2014.HZ₁B₉₆IWPXXIFW4.CLM24672183.2.224.112.2380.169.svg 0.19 7.187 Graph Black and white
The graphene-based device of claim 1, wherein the potential barrier comprises a material having a band gap of at least about 2. 93 eV.
The graphene-based device of claim 1, wherein the potential barrier is an air- gap between the first electrode and the secon i I electrode.
The graph e ne-based device of claim 1, wherein the first electrode is physically separated from the second electrode by the p i t ential barrier at a distance of at least about 0.5 n.
The graphene-based devic e of claim 1, wherein the first electrode and the second electrode directly contact a surface o f a substrate.
The graph e ne-based device of claim 1, wherein at least one selected f ro m the group consisting of the first elect r ode and the second electrode is electrically connected to a voltage source.
The grap h ene-based device of claim 1, wherein first electrode, second electrode and potential barrier are configure d such that the graphene-based device exhibits asymmetric, nonlinear T -V characteristics under application of the voltage bias between the first electrode and the second electrode.
. canceled
A graphene-based device, comprising: a layer of graphene; a first electrode defined within the l aye r of graphene; 13/355,473 3 of 10 PAGE 4 111 'RCVD AT 8 1131 2014 3:18:23 PM [E aste m Daylight Time] * SVR:W -PTOFAX-02/34 DNIS:2 738 300 * CSID:50362623 85' DURATI ON (mm-ss):03.17 08/13/2014 12: 0 9 5036262385 HALL NIMBUS PAGE 0 5/11 a second elec t rode defined within th e same layer of graphene in which the first electrode is defined; and a potential barrier, wherein the f ir st e lectrode is physically separated from the second electrode by the potential barrier, wherein the graphen e -based device i s a two-terminal device.
A m ethod of * orming a graphene-based device, comprising: forming a first electrode comprising graphene; forming a second electrode co n prisi ' g graphene, wherein a work function of the first electrode is different f r om a work function ci f the second electrode; and formi n g a potential barrier, wherein he first electrode is physically separated from the second electrode by the potential barrier. 13/355, 473 4 cf 10 PAGE 5111 RCVD AT 8/1312014 3:18:23 PM [Easte m Day li ght Time]'SV R:W -PTO FAX -00234' DNIS:2 7 383 001 CSID:503 6 262385 ' DURAT ION (mm ss):03 -1 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based device
graphene-based two-terminal device
Materials described outside the worked examples.
graphene
graphene (second electrode)
dopant atoms (Ni, Co, Pd, Al, Ag, Cu, Au, Pt)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
minimum band gap of potential barrier material | 2.93 eV | wide-band-gap barrier material |
Patent
Atlas literature
Patent
US 8,916,851Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A graphene-b a sed device, comprising: a first electrode comprising graphene. a second electrode comprising grap he ne, wherein a work function of the first electrode is different from a work function of the second electrode; and a potentia l barrier, wherein the first electrode is physically separated from the second electrode by the potential barrier. previously presented
The graphene -based device of claim 1, wherein at least one selected f ro m the group consisting of the fi r t electrode and the second electrode are doped with at least one atom selected from the group co n sisting of Ni, C o, Pd, Al, Ag, Cu, A u and Pt.
T h e graphene-based devic e of claim 1, further comprising a layer of grap h ene, wherein the potential barrier and at least on e selected from the group consisting of the first electrode and the second electrode are defined within the layer of graphene.
The graphene-based device of claim 1, wherein the potential barrier comprises an insulator.
The graphe n e-based devi c e of claim 1, wherein the potential ba rr ier comprises single-layer graphene. 131 355,473 2 of 1 0 PAGE 3111* RCVD AT 8/131 2014 3:18:23 PM E astem Daylight Time] S VR: WPTO FAX -002/34' DNIS:2 738 300 CSID:503 6 262385 * DURAT ION (mmss):03 -17 SVG 13355473.08-13-2014.HZ₁B₉₆IWPXXIFW4.CLM24672183.2.224.112.2380.169.svg 0.19 7.187 Graph Black and white
The graphene-based device of claim 1, wherein the potential barrier comprises a material having a band gap of at least about 2. 93 eV.
The graphene-based device of claim 1, wherein the potential barrier is an air- gap between the first electrode and the secon i I electrode.
The graph e ne-based device of claim 1, wherein the first electrode is physically separated from the second electrode by the p i t ential barrier at a distance of at least about 0.5 n.
The graphene-based devic e of claim 1, wherein the first electrode and the second electrode directly contact a surface o f a substrate.
The graph e ne-based device of claim 1, wherein at least one selected f ro m the group consisting of the first elect r ode and the second electrode is electrically connected to a voltage source.
The grap h ene-based device of claim 1, wherein first electrode, second electrode and potential barrier are configure d such that the graphene-based device exhibits asymmetric, nonlinear T -V characteristics under application of the voltage bias between the first electrode and the second electrode.
. canceled
A graphene-based device, comprising: a layer of graphene; a first electrode defined within the l aye r of graphene; 13/355,473 3 of 10 PAGE 4 111 'RCVD AT 8 1131 2014 3:18:23 PM [E aste m Daylight Time] * SVR:W -PTOFAX-02/34 DNIS:2 738 300 * CSID:50362623 85' DURATI ON (mm-ss):03.17 08/13/2014 12: 0 9 5036262385 HALL NIMBUS PAGE 0 5/11 a second elec t rode defined within th e same layer of graphene in which the first electrode is defined; and a potential barrier, wherein the f ir st e lectrode is physically separated from the second electrode by the potential barrier, wherein the graphen e -based device i s a two-terminal device.
A m ethod of * orming a graphene-based device, comprising: forming a first electrode comprising graphene; forming a second electrode co n prisi ' g graphene, wherein a work function of the first electrode is different f r om a work function ci f the second electrode; and formi n g a potential barrier, wherein he first electrode is physically separated from the second electrode by the potential barrier. 13/355, 473 4 cf 10 PAGE 5111 RCVD AT 8/1312014 3:18:23 PM [Easte m Day li ght Time]'SV R:W -PTO FAX -00234' DNIS:2 7 383 001 CSID:503 6 262385 ' DURAT ION (mm ss):03 -1 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based device
graphene-based two-terminal device
Materials described outside the worked examples.
graphene
graphene (second electrode)
dopant atoms (Ni, Co, Pd, Al, Ag, Cu, Au, Pt)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
minimum band gap of potential barrier material | 2.93 eV | wide-band-gap barrier material |
insulator
single-layer graphene
wide-band-gap barrier material
substrate material (Si, Cu, Ni, Ru, Ir, BN, SiC, oxides, nitrides)
polymer substrate (polyethylene, polypropylene, acrylic, fluoropolymer, polystyrene, PMMA, polyethylene terephthalate, polyimide, polyolefin)
insulator
single-layer graphene
wide-band-gap barrier material
substrate material (Si, Cu, Ni, Ru, Ir, BN, SiC, oxides, nitrides)
polymer substrate (polyethylene, polypropylene, acrylic, fluoropolymer, polystyrene, PMMA, polyethylene terephthalate, polyimide, polyolefin)
insulator
single-layer graphene
wide-band-gap barrier material
substrate material (Si, Cu, Ni, Ru, Ir, BN, SiC, oxides, nitrides)
polymer substrate (polyethylene, polypropylene, acrylic, fluoropolymer, polystyrene, PMMA, polyethylene terephthalate, polyimide, polyolefin)
insulator
single-layer graphene
wide-band-gap barrier material
substrate material (Si, Cu, Ni, Ru, Ir, BN, SiC, oxides, nitrides)
polymer substrate (polyethylene, polypropylene, acrylic, fluoropolymer, polystyrene, PMMA, polyethylene terephthalate, polyimide, polyolefin)