Patent
US 10,505,063Graphene and Hexagonal Boron Nitride van der Waals Heterostructured Solar Energy Processing Unit (SPU)
Mathew M. Zuckerman
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,505,063Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the requisite sequence of B, C, and N cannot be achieved in two (2)- Dimensions. Three (3) Dimensional Heterostructure is employed in the present …
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
FIG. 3. I onphoretic implantation of Florine is directed from the top surface of the hBN to create a tr i-layer doping structure across the 0.35 nm depth, first …
FIG. 4. The core element of the "Stack" is two layers of Graphene. One preferred embodiment involves growing two (2) layers of Graphene to have the layers in …
FIG. 5. The magnetic moment of Nitrogen- 15, atomic weight 15, is negative 0.28318 kg-second-amps. The magnetic moment of Boron- 11, atomic weight 11, is …
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials operative to produce, in the third-dimensional z-plane, a crystalline structure wherein elemental Boron (B) and elemental Nitrogen (N), contained in sheets of hexagonal Boron Nitride (hBN), are located as bookends to one or more Cs, contained in one or more sheets of Graphene disposed there between. Original
The SPU of claim 1 comprising Hexagonal Boron Nitride (hBN) monolayers, or multiples thereof, above and below the bilayer of Graphene, to dominantly capture Ultra- Violet and Infrared portions of the solar spectrum above the bilayer of Graphene and below the bilayer of Graphene, respectively. Original
The SPU of claim I comprising more than one layer of hBN located as bookends to one or more Cs contained in the one or more sheets of Graphene. Original
The SPU of claim l comprising a bilayer of Graphene, or multiples thereof, to dominantly capture visible light portion of the solar spectrum. Original
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials wherein each absorbed photon, or part thereof, produces Multi-Excitation Generation wherein more than one electron is generated for each absorbed photon. Original
The SPU of claim 5 wherein electro-chemical means are employed to implant strongly electronegative elements, such as Nitrogen, to incorporate materials that electrically offset the electropositive Boron in hBN to create n-Type semiconductor. Original
The SPU of claim 5 wherein employs electro-chemical means are employed to implant strongly electropositive elements, such as Boron, to incorporate materials that electrically offset the electronegative Nitrogen in hBN to create p-Type semiconductor. Original
The SPU of claim 5 wherein n-Type and p-Type doping are applied to the outer surface of the hBN layers to create across the depth of the hBN: first, an insulating zone adjacent to the surface facing bilayer Graphene; then, a semi-conductor zone that is either and n-Type or p-Type semiconductor; and, finally, a conductive layer that can be connected to form a positive electrode at the hBN layer nearest the solar illumination and a negative electrode at the hBN layer farthest from the solar illumination. Original
The SPU of claim 5 where the bottom of the cell consists of hBN grown on a metal element, such as Nickel, and the SPU's negative terminal is connected to the metal element. Original
The SPU of claim 5 where the top of the hBN layer nearest to the solar illumination is ionophoretically implanted with Gold to produce a conductive layer that connects to the positive terminal. Original
The SPU of claim 5 that produces a spin motion of the Boron atoms, in one rotation, and the Nitrogen atoms, in the opposite rotation, in hBN around its on axis by placing an external fixed magnetic field located perpendicular to the sheet of hBN and a second orthogonal magnetic paired to the strength of the fixed magnetic field and tuned to the resonant magnetic frequency of Nitrogen- 15 followed by Boron- 11 that combine to achieve the requisite spin for enhanced photonic absorption. Withdrawn
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power that employs Boron in the hBN sheets that constitutes substantially pure Boron- I1, atomic weight 11, with a magnetic moment of positive 2.68864 kg-second-amps and Nitrogen in the hBN sheets that constitutes substantially pure Nitrogen- 15, atomic weight 15, with a magnetic moment of negative 0.28318 kg-second-amps. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Solar Processing Unit (SPU)
Materials described outside the worked examples.
hexagonal Boron Nitride
hBN
Graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,505,063Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the requisite sequence of B, C, and N cannot be achieved in two (2)- Dimensions. Three (3) Dimensional Heterostructure is employed in the present …
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
FIG. 3. I onphoretic implantation of Florine is directed from the top surface of the hBN to create a tr i-layer doping structure across the 0.35 nm depth, first …
FIG. 4. The core element of the "Stack" is two layers of Graphene. One preferred embodiment involves growing two (2) layers of Graphene to have the layers in …
FIG. 5. The magnetic moment of Nitrogen- 15, atomic weight 15, is negative 0.28318 kg-second-amps. The magnetic moment of Boron- 11, atomic weight 11, is …
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials operative to produce, in the third-dimensional z-plane, a crystalline structure wherein elemental Boron (B) and elemental Nitrogen (N), contained in sheets of hexagonal Boron Nitride (hBN), are located as bookends to one or more Cs, contained in one or more sheets of Graphene disposed there between. Original
The SPU of claim 1 comprising Hexagonal Boron Nitride (hBN) monolayers, or multiples thereof, above and below the bilayer of Graphene, to dominantly capture Ultra- Violet and Infrared portions of the solar spectrum above the bilayer of Graphene and below the bilayer of Graphene, respectively. Original
The SPU of claim I comprising more than one layer of hBN located as bookends to one or more Cs contained in the one or more sheets of Graphene. Original
The SPU of claim l comprising a bilayer of Graphene, or multiples thereof, to dominantly capture visible light portion of the solar spectrum. Original
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials wherein each absorbed photon, or part thereof, produces Multi-Excitation Generation wherein more than one electron is generated for each absorbed photon. Original
The SPU of claim 5 wherein electro-chemical means are employed to implant strongly electronegative elements, such as Nitrogen, to incorporate materials that electrically offset the electropositive Boron in hBN to create n-Type semiconductor. Original
The SPU of claim 5 wherein employs electro-chemical means are employed to implant strongly electropositive elements, such as Boron, to incorporate materials that electrically offset the electronegative Nitrogen in hBN to create p-Type semiconductor. Original
The SPU of claim 5 wherein n-Type and p-Type doping are applied to the outer surface of the hBN layers to create across the depth of the hBN: first, an insulating zone adjacent to the surface facing bilayer Graphene; then, a semi-conductor zone that is either and n-Type or p-Type semiconductor; and, finally, a conductive layer that can be connected to form a positive electrode at the hBN layer nearest the solar illumination and a negative electrode at the hBN layer farthest from the solar illumination. Original
The SPU of claim 5 where the bottom of the cell consists of hBN grown on a metal element, such as Nickel, and the SPU's negative terminal is connected to the metal element. Original
The SPU of claim 5 where the top of the hBN layer nearest to the solar illumination is ionophoretically implanted with Gold to produce a conductive layer that connects to the positive terminal. Original
The SPU of claim 5 that produces a spin motion of the Boron atoms, in one rotation, and the Nitrogen atoms, in the opposite rotation, in hBN around its on axis by placing an external fixed magnetic field located perpendicular to the sheet of hBN and a second orthogonal magnetic paired to the strength of the fixed magnetic field and tuned to the resonant magnetic frequency of Nitrogen- 15 followed by Boron- 11 that combine to achieve the requisite spin for enhanced photonic absorption. Withdrawn
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power that employs Boron in the hBN sheets that constitutes substantially pure Boron- I1, atomic weight 11, with a magnetic moment of positive 2.68864 kg-second-amps and Nitrogen in the hBN sheets that constitutes substantially pure Nitrogen- 15, atomic weight 15, with a magnetic moment of negative 0.28318 kg-second-amps. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Solar Processing Unit (SPU)
Materials described outside the worked examples.
hexagonal Boron Nitride
hBN
Graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,505,063Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the requisite sequence of B, C, and N cannot be achieved in two (2)- Dimensions. Three (3) Dimensional Heterostructure is employed in the present …
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
FIG. 3. I onphoretic implantation of Florine is directed from the top surface of the hBN to create a tr i-layer doping structure across the 0.35 nm depth, first …
FIG. 4. The core element of the "Stack" is two layers of Graphene. One preferred embodiment involves growing two (2) layers of Graphene to have the layers in …
FIG. 5. The magnetic moment of Nitrogen- 15, atomic weight 15, is negative 0.28318 kg-second-amps. The magnetic moment of Boron- 11, atomic weight 11, is …
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials operative to produce, in the third-dimensional z-plane, a crystalline structure wherein elemental Boron (B) and elemental Nitrogen (N), contained in sheets of hexagonal Boron Nitride (hBN), are located as bookends to one or more Cs, contained in one or more sheets of Graphene disposed there between. Original
The SPU of claim 1 comprising Hexagonal Boron Nitride (hBN) monolayers, or multiples thereof, above and below the bilayer of Graphene, to dominantly capture Ultra- Violet and Infrared portions of the solar spectrum above the bilayer of Graphene and below the bilayer of Graphene, respectively. Original
The SPU of claim I comprising more than one layer of hBN located as bookends to one or more Cs contained in the one or more sheets of Graphene. Original
The SPU of claim l comprising a bilayer of Graphene, or multiples thereof, to dominantly capture visible light portion of the solar spectrum. Original
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials wherein each absorbed photon, or part thereof, produces Multi-Excitation Generation wherein more than one electron is generated for each absorbed photon. Original
The SPU of claim 5 wherein electro-chemical means are employed to implant strongly electronegative elements, such as Nitrogen, to incorporate materials that electrically offset the electropositive Boron in hBN to create n-Type semiconductor. Original
The SPU of claim 5 wherein employs electro-chemical means are employed to implant strongly electropositive elements, such as Boron, to incorporate materials that electrically offset the electronegative Nitrogen in hBN to create p-Type semiconductor. Original
The SPU of claim 5 wherein n-Type and p-Type doping are applied to the outer surface of the hBN layers to create across the depth of the hBN: first, an insulating zone adjacent to the surface facing bilayer Graphene; then, a semi-conductor zone that is either and n-Type or p-Type semiconductor; and, finally, a conductive layer that can be connected to form a positive electrode at the hBN layer nearest the solar illumination and a negative electrode at the hBN layer farthest from the solar illumination. Original
The SPU of claim 5 where the bottom of the cell consists of hBN grown on a metal element, such as Nickel, and the SPU's negative terminal is connected to the metal element. Original
The SPU of claim 5 where the top of the hBN layer nearest to the solar illumination is ionophoretically implanted with Gold to produce a conductive layer that connects to the positive terminal. Original
The SPU of claim 5 that produces a spin motion of the Boron atoms, in one rotation, and the Nitrogen atoms, in the opposite rotation, in hBN around its on axis by placing an external fixed magnetic field located perpendicular to the sheet of hBN and a second orthogonal magnetic paired to the strength of the fixed magnetic field and tuned to the resonant magnetic frequency of Nitrogen- 15 followed by Boron- 11 that combine to achieve the requisite spin for enhanced photonic absorption. Withdrawn
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power that employs Boron in the hBN sheets that constitutes substantially pure Boron- I1, atomic weight 11, with a magnetic moment of positive 2.68864 kg-second-amps and Nitrogen in the hBN sheets that constitutes substantially pure Nitrogen- 15, atomic weight 15, with a magnetic moment of negative 0.28318 kg-second-amps. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Solar Processing Unit (SPU)
Materials described outside the worked examples.
hexagonal Boron Nitride
hBN
Graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,505,063Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the requisite sequence of B, C, and N cannot be achieved in two (2)- Dimensions. Three (3) Dimensional Heterostructure is employed in the present …
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
FIG. 3. I onphoretic implantation of Florine is directed from the top surface of the hBN to create a tr i-layer doping structure across the 0.35 nm depth, first …
FIG. 4. The core element of the "Stack" is two layers of Graphene. One preferred embodiment involves growing two (2) layers of Graphene to have the layers in …
FIG. 5. The magnetic moment of Nitrogen- 15, atomic weight 15, is negative 0.28318 kg-second-amps. The magnetic moment of Boron- 11, atomic weight 11, is …
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials operative to produce, in the third-dimensional z-plane, a crystalline structure wherein elemental Boron (B) and elemental Nitrogen (N), contained in sheets of hexagonal Boron Nitride (hBN), are located as bookends to one or more Cs, contained in one or more sheets of Graphene disposed there between. Original
The SPU of claim 1 comprising Hexagonal Boron Nitride (hBN) monolayers, or multiples thereof, above and below the bilayer of Graphene, to dominantly capture Ultra- Violet and Infrared portions of the solar spectrum above the bilayer of Graphene and below the bilayer of Graphene, respectively. Original
The SPU of claim I comprising more than one layer of hBN located as bookends to one or more Cs contained in the one or more sheets of Graphene. Original
The SPU of claim l comprising a bilayer of Graphene, or multiples thereof, to dominantly capture visible light portion of the solar spectrum. Original
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power comprising a heterostructure of sheets of two-dimensional materials wherein each absorbed photon, or part thereof, produces Multi-Excitation Generation wherein more than one electron is generated for each absorbed photon. Original
The SPU of claim 5 wherein electro-chemical means are employed to implant strongly electronegative elements, such as Nitrogen, to incorporate materials that electrically offset the electropositive Boron in hBN to create n-Type semiconductor. Original
The SPU of claim 5 wherein employs electro-chemical means are employed to implant strongly electropositive elements, such as Boron, to incorporate materials that electrically offset the electronegative Nitrogen in hBN to create p-Type semiconductor. Original
The SPU of claim 5 wherein n-Type and p-Type doping are applied to the outer surface of the hBN layers to create across the depth of the hBN: first, an insulating zone adjacent to the surface facing bilayer Graphene; then, a semi-conductor zone that is either and n-Type or p-Type semiconductor; and, finally, a conductive layer that can be connected to form a positive electrode at the hBN layer nearest the solar illumination and a negative electrode at the hBN layer farthest from the solar illumination. Original
The SPU of claim 5 where the bottom of the cell consists of hBN grown on a metal element, such as Nickel, and the SPU's negative terminal is connected to the metal element. Original
The SPU of claim 5 where the top of the hBN layer nearest to the solar illumination is ionophoretically implanted with Gold to produce a conductive layer that connects to the positive terminal. Original
The SPU of claim 5 that produces a spin motion of the Boron atoms, in one rotation, and the Nitrogen atoms, in the opposite rotation, in hBN around its on axis by placing an external fixed magnetic field located perpendicular to the sheet of hBN and a second orthogonal magnetic paired to the strength of the fixed magnetic field and tuned to the resonant magnetic frequency of Nitrogen- 15 followed by Boron- 11 that combine to achieve the requisite spin for enhanced photonic absorption. Withdrawn
A Solar Processing Unit (SPU) for the conversion of solar energy to electric power that employs Boron in the hBN sheets that constitutes substantially pure Boron- I1, atomic weight 11, with a magnetic moment of positive 2.68864 kg-second-amps and Nitrogen in the hBN sheets that constitutes substantially pure Nitrogen- 15, atomic weight 15, with a magnetic moment of negative 0.28318 kg-second-amps. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
Solar Processing Unit (SPU)
Materials described outside the worked examples.
hexagonal Boron Nitride
hBN
Graphene
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. [0026] The SPU will function when there is a difference in electronegativity between the n-Type bookend and the p-Type bookend. However, the performance …
Related documents with shared materials, methods, properties, or citations.
Nickel
Ni
Gold
Au
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Nickel
Ni
Gold
Au
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Nickel
Ni
Gold
Au
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in
Nickel
Ni
Gold
Au
FIG. 6. By placing the hBN, produced from the heavy isotopes of Boron and Nitrogen, in the geometric configuration shown in