Patent
US 8,946,764"GALLIUM NITRIDE-BASED SEMICONDUCTOR ELEMENT, OPTICAL
Goshi Biwa
US
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Patent
Atlas literature
Patent
US 8,946,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ently amended): A gallium nitride-based semiconductor element comp rising: a first GaN-based compound layer comprising: -an -a first undo p ed GaN la y er, an n-type conductive first GaN-based compound semiconductor layer formed on the undoped GaN layer, a nd an underlayer formed directly on the n-type conductive first GaN-based compound semiconductor layer,and a second undoped GaN layer formed directly on the underlaye r; an active layer formed on the second undoped GaN layer; and a second GaN-based compound layer including a p-type conductive layer formed on the active layer such that the active layer is provided between the first GaN-based compound layer and the second GaN-based compound layer -and an a c tive laye r pro vided between the fi r st GaN based compoun d laye r and the seeond GaN based co mpo unf d laye r, whe r ein the ui nde r laye r is f -efff ed between the fi r st GaN based eefmpetu nd se mficonduto laye r and the a ctiv e lay er, -and -wherein the underlayer has an n-type impurity concentration in the range of 3x 10 to 3x 1019/cm3, and when a reverse bias of 5 V is applied, a leakage cu rr ent density, which is the density of a current flowing per unit area of the active layer, is 2x 10-5 A/c m2 or less.
The gallium nitride-based semiconductor element according to Claim 1, wherein the underlayer and the active layer each include a GaN-based compound containing In, the atomic composition ratio of In to the sum of In and Ga (In + Ga) in the GaN-based compound forming the underlayer is 0.005 or more and is lower than that of the GaN-based compound forming the active layer.
An optical device comprising: a plurality of gallium nitride-based semiconductor elements, each of which is the gallium nitride-based semiconductor element according to Claim 1, a rr anged in a two-dimensional matrix, wherein first electrodes of the gallium nitride-based semiconductor elements disposed along lines in a first direction are connected to common wires of the respective lines in the first direction, and second electrodes of the gallium nitride-based semiconductor elements disposed along lines in a second direction are connected to common wires of the respective lines in the second direction.
The gallium nitride-based semiconductor element according to Claim 1, wherein the layers forming the first GaN-based compound layer and the second GaN-based compound layer are transparent to emission light wavelengths.
The gallium nitride-based semiconductor element according to Claim 1, wherein the n-type conductive first GaN-based compound semiconductor layer forms a contact with an n-type electrode. 4
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor element
optical device (2D matrix of GaN-based semiconductor elements)
No layer stack recorded.
Materials described outside the worked examples.
undoped GaN layer
GaN
n-type conductive first GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type impurity concentration of underlayer | 3000000000000000000–30000000000000000000 /cm3 | underlayer (n-type GaN-based) |
leakage current density at 5V reverse bias | ≤ 0.00002 A/cm2 |
Patent
Atlas literature
Patent
US 8,946,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ently amended): A gallium nitride-based semiconductor element comp rising: a first GaN-based compound layer comprising: -an -a first undo p ed GaN la y er, an n-type conductive first GaN-based compound semiconductor layer formed on the undoped GaN layer, a nd an underlayer formed directly on the n-type conductive first GaN-based compound semiconductor layer,and a second undoped GaN layer formed directly on the underlaye r; an active layer formed on the second undoped GaN layer; and a second GaN-based compound layer including a p-type conductive layer formed on the active layer such that the active layer is provided between the first GaN-based compound layer and the second GaN-based compound layer -and an a c tive laye r pro vided between the fi r st GaN based compoun d laye r and the seeond GaN based co mpo unf d laye r, whe r ein the ui nde r laye r is f -efff ed between the fi r st GaN based eefmpetu nd se mficonduto laye r and the a ctiv e lay er, -and -wherein the underlayer has an n-type impurity concentration in the range of 3x 10 to 3x 1019/cm3, and when a reverse bias of 5 V is applied, a leakage cu rr ent density, which is the density of a current flowing per unit area of the active layer, is 2x 10-5 A/c m2 or less.
The gallium nitride-based semiconductor element according to Claim 1, wherein the underlayer and the active layer each include a GaN-based compound containing In, the atomic composition ratio of In to the sum of In and Ga (In + Ga) in the GaN-based compound forming the underlayer is 0.005 or more and is lower than that of the GaN-based compound forming the active layer.
An optical device comprising: a plurality of gallium nitride-based semiconductor elements, each of which is the gallium nitride-based semiconductor element according to Claim 1, a rr anged in a two-dimensional matrix, wherein first electrodes of the gallium nitride-based semiconductor elements disposed along lines in a first direction are connected to common wires of the respective lines in the first direction, and second electrodes of the gallium nitride-based semiconductor elements disposed along lines in a second direction are connected to common wires of the respective lines in the second direction.
The gallium nitride-based semiconductor element according to Claim 1, wherein the layers forming the first GaN-based compound layer and the second GaN-based compound layer are transparent to emission light wavelengths.
The gallium nitride-based semiconductor element according to Claim 1, wherein the n-type conductive first GaN-based compound semiconductor layer forms a contact with an n-type electrode. 4
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor element
optical device (2D matrix of GaN-based semiconductor elements)
No layer stack recorded.
Materials described outside the worked examples.
undoped GaN layer
GaN
n-type conductive first GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type impurity concentration of underlayer | 3000000000000000000–30000000000000000000 /cm3 | underlayer (n-type GaN-based) |
leakage current density at 5V reverse bias | ≤ 0.00002 A/cm2 |
Patent
Atlas literature
Patent
US 8,946,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ently amended): A gallium nitride-based semiconductor element comp rising: a first GaN-based compound layer comprising: -an -a first undo p ed GaN la y er, an n-type conductive first GaN-based compound semiconductor layer formed on the undoped GaN layer, a nd an underlayer formed directly on the n-type conductive first GaN-based compound semiconductor layer,and a second undoped GaN layer formed directly on the underlaye r; an active layer formed on the second undoped GaN layer; and a second GaN-based compound layer including a p-type conductive layer formed on the active layer such that the active layer is provided between the first GaN-based compound layer and the second GaN-based compound layer -and an a c tive laye r pro vided between the fi r st GaN based compoun d laye r and the seeond GaN based co mpo unf d laye r, whe r ein the ui nde r laye r is f -efff ed between the fi r st GaN based eefmpetu nd se mficonduto laye r and the a ctiv e lay er, -and -wherein the underlayer has an n-type impurity concentration in the range of 3x 10 to 3x 1019/cm3, and when a reverse bias of 5 V is applied, a leakage cu rr ent density, which is the density of a current flowing per unit area of the active layer, is 2x 10-5 A/c m2 or less.
The gallium nitride-based semiconductor element according to Claim 1, wherein the underlayer and the active layer each include a GaN-based compound containing In, the atomic composition ratio of In to the sum of In and Ga (In + Ga) in the GaN-based compound forming the underlayer is 0.005 or more and is lower than that of the GaN-based compound forming the active layer.
An optical device comprising: a plurality of gallium nitride-based semiconductor elements, each of which is the gallium nitride-based semiconductor element according to Claim 1, a rr anged in a two-dimensional matrix, wherein first electrodes of the gallium nitride-based semiconductor elements disposed along lines in a first direction are connected to common wires of the respective lines in the first direction, and second electrodes of the gallium nitride-based semiconductor elements disposed along lines in a second direction are connected to common wires of the respective lines in the second direction.
The gallium nitride-based semiconductor element according to Claim 1, wherein the layers forming the first GaN-based compound layer and the second GaN-based compound layer are transparent to emission light wavelengths.
The gallium nitride-based semiconductor element according to Claim 1, wherein the n-type conductive first GaN-based compound semiconductor layer forms a contact with an n-type electrode. 4
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor element
optical device (2D matrix of GaN-based semiconductor elements)
No layer stack recorded.
Materials described outside the worked examples.
undoped GaN layer
GaN
n-type conductive first GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type impurity concentration of underlayer | 3000000000000000000–30000000000000000000 /cm3 | underlayer (n-type GaN-based) |
leakage current density at 5V reverse bias | ≤ 0.00002 A/cm2 |
Patent
Atlas literature
Patent
US 8,946,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(cu rr ently amended): A gallium nitride-based semiconductor element comp rising: a first GaN-based compound layer comprising: -an -a first undo p ed GaN la y er, an n-type conductive first GaN-based compound semiconductor layer formed on the undoped GaN layer, a nd an underlayer formed directly on the n-type conductive first GaN-based compound semiconductor layer,and a second undoped GaN layer formed directly on the underlaye r; an active layer formed on the second undoped GaN layer; and a second GaN-based compound layer including a p-type conductive layer formed on the active layer such that the active layer is provided between the first GaN-based compound layer and the second GaN-based compound layer -and an a c tive laye r pro vided between the fi r st GaN based compoun d laye r and the seeond GaN based co mpo unf d laye r, whe r ein the ui nde r laye r is f -efff ed between the fi r st GaN based eefmpetu nd se mficonduto laye r and the a ctiv e lay er, -and -wherein the underlayer has an n-type impurity concentration in the range of 3x 10 to 3x 1019/cm3, and when a reverse bias of 5 V is applied, a leakage cu rr ent density, which is the density of a current flowing per unit area of the active layer, is 2x 10-5 A/c m2 or less.
The gallium nitride-based semiconductor element according to Claim 1, wherein the underlayer and the active layer each include a GaN-based compound containing In, the atomic composition ratio of In to the sum of In and Ga (In + Ga) in the GaN-based compound forming the underlayer is 0.005 or more and is lower than that of the GaN-based compound forming the active layer.
An optical device comprising: a plurality of gallium nitride-based semiconductor elements, each of which is the gallium nitride-based semiconductor element according to Claim 1, a rr anged in a two-dimensional matrix, wherein first electrodes of the gallium nitride-based semiconductor elements disposed along lines in a first direction are connected to common wires of the respective lines in the first direction, and second electrodes of the gallium nitride-based semiconductor elements disposed along lines in a second direction are connected to common wires of the respective lines in the second direction.
The gallium nitride-based semiconductor element according to Claim 1, wherein the layers forming the first GaN-based compound layer and the second GaN-based compound layer are transparent to emission light wavelengths.
The gallium nitride-based semiconductor element according to Claim 1, wherein the n-type conductive first GaN-based compound semiconductor layer forms a contact with an n-type electrode. 4
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
The gallium nitride-based semiconductor element according to
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based semiconductor element
optical device (2D matrix of GaN-based semiconductor elements)
No layer stack recorded.
Materials described outside the worked examples.
undoped GaN layer
GaN
n-type conductive first GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
n-type impurity concentration of underlayer | 3000000000000000000–30000000000000000000 /cm3 | underlayer (n-type GaN-based) |
leakage current density at 5V reverse bias | ≤ 0.00002 A/cm2 |
image display apparatus with passive matrix pixel portion
No layer stack recorded.
underlayer (n-type GaN-based)
p-type conductive GaN-based compound layer
InGaN underlayer
InGaN
| — |
Temperature | 700–1400 °C | — |
Thickness | 10–100 nm | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 1 nm | — |
image display apparatus with passive matrix pixel portion
No layer stack recorded.
underlayer (n-type GaN-based)
p-type conductive GaN-based compound layer
InGaN underlayer
InGaN
| — |
Temperature | 700–1400 °C | — |
Thickness | 10–100 nm | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 1 nm | — |
image display apparatus with passive matrix pixel portion
No layer stack recorded.
underlayer (n-type GaN-based)
p-type conductive GaN-based compound layer
InGaN underlayer
InGaN
| — |
Temperature | 700–1400 °C | — |
Thickness | 10–100 nm | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 1 nm | — |
image display apparatus with passive matrix pixel portion
No layer stack recorded.
underlayer (n-type GaN-based)
p-type conductive GaN-based compound layer
InGaN underlayer
InGaN
| — |
Temperature | 700–1400 °C | — |
Thickness | 10–100 nm | — |
Thickness | 1–100 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | ≥ 1 °C | — |
Thickness | ≥ 1 nm | — |