Patent
Atlas literature
Patent
US 9,237,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A conductive thin film device comprising: a substrate; a thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate; and a single coating layer comprising a material selected from the group consisting of graphene oxide or graphene oxide in combination with a metal oxide sol gel film, the coating layer overlaying the one-dimensional nanomaterial networked layer as a top encapsulation layer, thereby providing the thin film structure with said top encapsulation layer, wherein the coating layer at least partially covers the nanomaterial networked layer, thereby forming the device as a double-layer structure wi thout substantially de terior atingte _ perfo rnance of the thin filmn device in tersof light transmittane and electrical onductivity.
The conductive thin film device of claim 1, wherein the substrate comprises a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The conductive thin film device of claim 1, wherein the substrate comprises an electronic device.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a one-dimensional nanostructure material, including metal nanowires selected from the group consisting of silver nanowires, gold nanowires, copper nanowires, metal oxide nanowires such as zin c oxide nanowires, titanium oxide nanotube, and carbon nanotube, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the coating layer overlaying the one-dimensional nanomaterial networked layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, further comprising: the thin film provided as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a silver nanowire (Ag NW) network, wherein the coating layer comprises graphene oxide thin film overlaying on the one- dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer provides a one-dimensional nanostructure material comprising carbon nanotubes, graphene oxide or graphene oxide in combination with a metal oxide sol gel film coating layer overlaying on the one-dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer comprises graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film overlaying on the one-dimensional nanostructure conductive layer, and wherein the thickness of the coating layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer enhances the conductivity of the thin film device.
The conductive thin film device of claim 1, further comprising: the nanomaterial networked comprising a nanowire conductive layer; and the coating layer comprising dissolved dissolved graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film on top of at least a portion of the nanowire conducting layer applied by permitting a solvent to evaporate, thereby forming the graphene or graphene oxide layer on top of at least a portion of the nanowire conductive layer.
The conductive thin film device of claim 1, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
The conductive thin film device of claim 1, further comprising: the substrate formed as a transparent substrate; and thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate and a coating layer overlaying the one-dimensional nanomaterial networked layer, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
A method of forming a double-layer structured electrode as a one-dimensional nanomaterial network, the method comprising: providing a substrate; applying a first layer as a thin film comprising a metal or metal oxide network as a one- dimensional nanomaterial networked layer; and applying a single top coating over the metal or metal oxide network, the top coating comprising a material selected from graphene oxide or graphene oxide in combination with a metal oxide sol gel film, thereby forming a 2D surface structure, the coating layer overlaying the one-dim ensional n anorna t eri al net worke d layeras a top encapsul ation layei, t her ebypoviding thethtnti Istructure having a topl encapsulation layer-and f onn ing t he dev ice as a double-laer structure without substantially deteriorating the performance of the thin film device in terms of light transmittance and electrical conductivity.
The method of claim 14, further comprising: applying the first layer as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface; and
The method of claim 14, further comprising: nanowire conductive layer; applying the coating comprising dissolved graphene oxide or graphene thin film; and permitting the solvent to evaporate, oxide layer on top of at least a portion of the substrate comprising an electronic device. using, as the nanomaterial networked layer, a layer by using a solvent applying solution oxide in combination with a metal oxide sol gel thereby forming the graphene or graphene nanowire conductive layer. 7
Layer stacks claimed or described, ordered top of device to substrate.
double-layer conductive thin film device (Ag NW/GO)
transparent/flexible electrode (Ag NW/GO double layer)
Materials described outside the worked examples.
graphene oxide
graphene oxide in combination with a metal oxide sol gel film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of silver nanowire networks without (Fig. 2A) and with GO coating (Fig. 2B); thin film of overlapped GO sheets observed on the Ag NW film.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance | 50–99 % | Ag NWgraphene oxide (GO) coating |
GO coating thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,237,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A conductive thin film device comprising: a substrate; a thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate; and a single coating layer comprising a material selected from the group consisting of graphene oxide or graphene oxide in combination with a metal oxide sol gel film, the coating layer overlaying the one-dimensional nanomaterial networked layer as a top encapsulation layer, thereby providing the thin film structure with said top encapsulation layer, wherein the coating layer at least partially covers the nanomaterial networked layer, thereby forming the device as a double-layer structure wi thout substantially de terior atingte _ perfo rnance of the thin filmn device in tersof light transmittane and electrical onductivity.
The conductive thin film device of claim 1, wherein the substrate comprises a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The conductive thin film device of claim 1, wherein the substrate comprises an electronic device.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a one-dimensional nanostructure material, including metal nanowires selected from the group consisting of silver nanowires, gold nanowires, copper nanowires, metal oxide nanowires such as zin c oxide nanowires, titanium oxide nanotube, and carbon nanotube, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the coating layer overlaying the one-dimensional nanomaterial networked layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, further comprising: the thin film provided as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a silver nanowire (Ag NW) network, wherein the coating layer comprises graphene oxide thin film overlaying on the one- dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer provides a one-dimensional nanostructure material comprising carbon nanotubes, graphene oxide or graphene oxide in combination with a metal oxide sol gel film coating layer overlaying on the one-dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer comprises graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film overlaying on the one-dimensional nanostructure conductive layer, and wherein the thickness of the coating layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer enhances the conductivity of the thin film device.
The conductive thin film device of claim 1, further comprising: the nanomaterial networked comprising a nanowire conductive layer; and the coating layer comprising dissolved dissolved graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film on top of at least a portion of the nanowire conducting layer applied by permitting a solvent to evaporate, thereby forming the graphene or graphene oxide layer on top of at least a portion of the nanowire conductive layer.
The conductive thin film device of claim 1, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
The conductive thin film device of claim 1, further comprising: the substrate formed as a transparent substrate; and thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate and a coating layer overlaying the one-dimensional nanomaterial networked layer, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
A method of forming a double-layer structured electrode as a one-dimensional nanomaterial network, the method comprising: providing a substrate; applying a first layer as a thin film comprising a metal or metal oxide network as a one- dimensional nanomaterial networked layer; and applying a single top coating over the metal or metal oxide network, the top coating comprising a material selected from graphene oxide or graphene oxide in combination with a metal oxide sol gel film, thereby forming a 2D surface structure, the coating layer overlaying the one-dim ensional n anorna t eri al net worke d layeras a top encapsul ation layei, t her ebypoviding thethtnti Istructure having a topl encapsulation layer-and f onn ing t he dev ice as a double-laer structure without substantially deteriorating the performance of the thin film device in terms of light transmittance and electrical conductivity.
The method of claim 14, further comprising: applying the first layer as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface; and
The method of claim 14, further comprising: nanowire conductive layer; applying the coating comprising dissolved graphene oxide or graphene thin film; and permitting the solvent to evaporate, oxide layer on top of at least a portion of the substrate comprising an electronic device. using, as the nanomaterial networked layer, a layer by using a solvent applying solution oxide in combination with a metal oxide sol gel thereby forming the graphene or graphene nanowire conductive layer. 7
Layer stacks claimed or described, ordered top of device to substrate.
double-layer conductive thin film device (Ag NW/GO)
transparent/flexible electrode (Ag NW/GO double layer)
Materials described outside the worked examples.
graphene oxide
graphene oxide in combination with a metal oxide sol gel film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of silver nanowire networks without (Fig. 2A) and with GO coating (Fig. 2B); thin film of overlapped GO sheets observed on the Ag NW film.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance | 50–99 % | Ag NWgraphene oxide (GO) coating |
GO coating thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,237,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A conductive thin film device comprising: a substrate; a thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate; and a single coating layer comprising a material selected from the group consisting of graphene oxide or graphene oxide in combination with a metal oxide sol gel film, the coating layer overlaying the one-dimensional nanomaterial networked layer as a top encapsulation layer, thereby providing the thin film structure with said top encapsulation layer, wherein the coating layer at least partially covers the nanomaterial networked layer, thereby forming the device as a double-layer structure wi thout substantially de terior atingte _ perfo rnance of the thin filmn device in tersof light transmittane and electrical onductivity.
The conductive thin film device of claim 1, wherein the substrate comprises a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The conductive thin film device of claim 1, wherein the substrate comprises an electronic device.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a one-dimensional nanostructure material, including metal nanowires selected from the group consisting of silver nanowires, gold nanowires, copper nanowires, metal oxide nanowires such as zin c oxide nanowires, titanium oxide nanotube, and carbon nanotube, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the coating layer overlaying the one-dimensional nanomaterial networked layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, further comprising: the thin film provided as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a silver nanowire (Ag NW) network, wherein the coating layer comprises graphene oxide thin film overlaying on the one- dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer provides a one-dimensional nanostructure material comprising carbon nanotubes, graphene oxide or graphene oxide in combination with a metal oxide sol gel film coating layer overlaying on the one-dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer comprises graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film overlaying on the one-dimensional nanostructure conductive layer, and wherein the thickness of the coating layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer enhances the conductivity of the thin film device.
The conductive thin film device of claim 1, further comprising: the nanomaterial networked comprising a nanowire conductive layer; and the coating layer comprising dissolved dissolved graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film on top of at least a portion of the nanowire conducting layer applied by permitting a solvent to evaporate, thereby forming the graphene or graphene oxide layer on top of at least a portion of the nanowire conductive layer.
The conductive thin film device of claim 1, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
The conductive thin film device of claim 1, further comprising: the substrate formed as a transparent substrate; and thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate and a coating layer overlaying the one-dimensional nanomaterial networked layer, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
A method of forming a double-layer structured electrode as a one-dimensional nanomaterial network, the method comprising: providing a substrate; applying a first layer as a thin film comprising a metal or metal oxide network as a one- dimensional nanomaterial networked layer; and applying a single top coating over the metal or metal oxide network, the top coating comprising a material selected from graphene oxide or graphene oxide in combination with a metal oxide sol gel film, thereby forming a 2D surface structure, the coating layer overlaying the one-dim ensional n anorna t eri al net worke d layeras a top encapsul ation layei, t her ebypoviding thethtnti Istructure having a topl encapsulation layer-and f onn ing t he dev ice as a double-laer structure without substantially deteriorating the performance of the thin film device in terms of light transmittance and electrical conductivity.
The method of claim 14, further comprising: applying the first layer as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface; and
The method of claim 14, further comprising: nanowire conductive layer; applying the coating comprising dissolved graphene oxide or graphene thin film; and permitting the solvent to evaporate, oxide layer on top of at least a portion of the substrate comprising an electronic device. using, as the nanomaterial networked layer, a layer by using a solvent applying solution oxide in combination with a metal oxide sol gel thereby forming the graphene or graphene nanowire conductive layer. 7
Layer stacks claimed or described, ordered top of device to substrate.
double-layer conductive thin film device (Ag NW/GO)
transparent/flexible electrode (Ag NW/GO double layer)
Materials described outside the worked examples.
graphene oxide
graphene oxide in combination with a metal oxide sol gel film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of silver nanowire networks without (Fig. 2A) and with GO coating (Fig. 2B); thin film of overlapped GO sheets observed on the Ag NW film.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance | 50–99 % | Ag NWgraphene oxide (GO) coating |
GO coating thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,237,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A conductive thin film device comprising: a substrate; a thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate; and a single coating layer comprising a material selected from the group consisting of graphene oxide or graphene oxide in combination with a metal oxide sol gel film, the coating layer overlaying the one-dimensional nanomaterial networked layer as a top encapsulation layer, thereby providing the thin film structure with said top encapsulation layer, wherein the coating layer at least partially covers the nanomaterial networked layer, thereby forming the device as a double-layer structure wi thout substantially de terior atingte _ perfo rnance of the thin filmn device in tersof light transmittane and electrical onductivity.
The conductive thin film device of claim 1, wherein the substrate comprises a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The conductive thin film device of claim 1, wherein the substrate comprises an electronic device.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a one-dimensional nanostructure material, including metal nanowires selected from the group consisting of silver nanowires, gold nanowires, copper nanowires, metal oxide nanowires such as zin c oxide nanowires, titanium oxide nanotube, and carbon nanotube, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the coating layer overlaying the one-dimensional nanomaterial networked layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, further comprising: the thin film provided as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer comprises a silver nanowire (Ag NW) network, wherein the coating layer comprises graphene oxide thin film overlaying on the one- dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the one-dimensional nanomaterial conductive layer provides a one-dimensional nanostructure material comprising carbon nanotubes, graphene oxide or graphene oxide in combination with a metal oxide sol gel film coating layer overlaying on the one-dimensional nanostructure conductive layer, wherein the thickness of the one-dimensional nanomaterial networked film ranges from 1 nm to 1 mm, and wherein the graphene or graphene oxide coating ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer comprises graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film overlaying on the one-dimensional nanostructure conductive layer, and wherein the thickness of the coating layer ranges from 1 nm to 50 nm.
The conductive thin film device of claim 1, wherein the coating layer enhances the conductivity of the thin film device.
The conductive thin film device of claim 1, further comprising: the nanomaterial networked comprising a nanowire conductive layer; and the coating layer comprising dissolved dissolved graphene oxide or graphene oxide in combination with a metal oxide sol gel thin film on top of at least a portion of the nanowire conducting layer applied by permitting a solvent to evaporate, thereby forming the graphene or graphene oxide layer on top of at least a portion of the nanowire conductive layer.
The conductive thin film device of claim 1, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
The conductive thin film device of claim 1, further comprising: the substrate formed as a transparent substrate; and thin film structure comprising a one-dimensional nanomaterial networked layer deposited on the substrate and a coating layer overlaying the one-dimensional nanomaterial networked layer, wherein the conductive thin film forms a thermal interface material, thin film electrode, flexible electrode or a transparent electrode.
A method of forming a double-layer structured electrode as a one-dimensional nanomaterial network, the method comprising: providing a substrate; applying a first layer as a thin film comprising a metal or metal oxide network as a one- dimensional nanomaterial networked layer; and applying a single top coating over the metal or metal oxide network, the top coating comprising a material selected from graphene oxide or graphene oxide in combination with a metal oxide sol gel film, thereby forming a 2D surface structure, the coating layer overlaying the one-dim ensional n anorna t eri al net worke d layeras a top encapsul ation layei, t her ebypoviding thethtnti Istructure having a topl encapsulation layer-and f onn ing t he dev ice as a double-laer structure without substantially deteriorating the performance of the thin film device in terms of light transmittance and electrical conductivity.
The method of claim 14, further comprising: applying the first layer as a thin film comprising a silver nanowire (Ag NW) network as a single layer structure of silver nanowire percolation network formed on the substrate.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface.
The method of claim 14, further comprising: providing the substrate as a material selected from the group consisting of polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide and composite material surface; and
The method of claim 14, further comprising: nanowire conductive layer; applying the coating comprising dissolved graphene oxide or graphene thin film; and permitting the solvent to evaporate, oxide layer on top of at least a portion of the substrate comprising an electronic device. using, as the nanomaterial networked layer, a layer by using a solvent applying solution oxide in combination with a metal oxide sol gel thereby forming the graphene or graphene nanowire conductive layer. 7
Layer stacks claimed or described, ordered top of device to substrate.
double-layer conductive thin film device (Ag NW/GO)
transparent/flexible electrode (Ag NW/GO double layer)
Materials described outside the worked examples.
graphene oxide
graphene oxide in combination with a metal oxide sol gel film
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
SEM images of silver nanowire networks without (Fig. 2A) and with GO coating (Fig. 2B); thin film of overlapped GO sheets observed on the Ag NW film.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
transmittance | 50–99 % | Ag NWgraphene oxide (GO) coating |
GO coating thickness |
Related documents with shared materials, methods, properties, or citations.
one-dimensional nanomaterial networked layer
substrate material (polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide, composite)
silver nanowires
Ag NW
gold nanowires
copper nanowires
zinc oxide nanowires
ZnO
titanium oxide nanotube
TiO₂
carbon nanotube
graphene oxide (GO) coating
isopropyl alcohol suspension of Ag NW
Atomic force microscopy image of GO coating (Fig. 2C) confirming GO layer covers top of Ag NW films; cross-section measurement of GO coating thickness ~6 nm.
| 6 nm |
graphene oxide (GO) coating |
graphene oxide coating layer thickness | 1–50 nm | graphene oxide |
one-dimensional nanomaterial networked film thickness | 1–1000000 nm | one-dimensional nanomaterial networked layer |
Temperature | 400–500 °C | — |
one-dimensional nanomaterial networked layer
substrate material (polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide, composite)
silver nanowires
Ag NW
gold nanowires
copper nanowires
zinc oxide nanowires
ZnO
titanium oxide nanotube
TiO₂
carbon nanotube
graphene oxide (GO) coating
isopropyl alcohol suspension of Ag NW
Atomic force microscopy image of GO coating (Fig. 2C) confirming GO layer covers top of Ag NW films; cross-section measurement of GO coating thickness ~6 nm.
| 6 nm |
graphene oxide (GO) coating |
graphene oxide coating layer thickness | 1–50 nm | graphene oxide |
one-dimensional nanomaterial networked film thickness | 1–1000000 nm | one-dimensional nanomaterial networked layer |
Temperature | 400–500 °C | — |
one-dimensional nanomaterial networked layer
substrate material (polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide, composite)
silver nanowires
Ag NW
gold nanowires
copper nanowires
zinc oxide nanowires
ZnO
titanium oxide nanotube
TiO₂
carbon nanotube
graphene oxide (GO) coating
isopropyl alcohol suspension of Ag NW
Atomic force microscopy image of GO coating (Fig. 2C) confirming GO layer covers top of Ag NW films; cross-section measurement of GO coating thickness ~6 nm.
| 6 nm |
graphene oxide (GO) coating |
graphene oxide coating layer thickness | 1–50 nm | graphene oxide |
one-dimensional nanomaterial networked film thickness | 1–1000000 nm | one-dimensional nanomaterial networked layer |
Temperature | 400–500 °C | — |
one-dimensional nanomaterial networked layer
substrate material (polymer, ceramic, glass, semiconductor, metal, metal oxide, nonmetal oxide, composite)
silver nanowires
Ag NW
gold nanowires
copper nanowires
zinc oxide nanowires
ZnO
titanium oxide nanotube
TiO₂
carbon nanotube
graphene oxide (GO) coating
isopropyl alcohol suspension of Ag NW
Atomic force microscopy image of GO coating (Fig. 2C) confirming GO layer covers top of Ag NW films; cross-section measurement of GO coating thickness ~6 nm.
| 6 nm |
graphene oxide (GO) coating |
graphene oxide coating layer thickness | 1–50 nm | graphene oxide |
one-dimensional nanomaterial networked film thickness | 1–1000000 nm | one-dimensional nanomaterial networked layer |
Temperature | 400–500 °C | — |
