Patent
US 11,496,134DIFFERENTIAL ACTIVATED LATCH FOR GaN BASED LEVEL SHIFTER
Edward Lee Ravi Ananth
US
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Patent
Atlas literature
Patent
US 11,496,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cross-coupled differential activated latch circuit, comprising: first and second inputs for receiving digital input values; first and second outputs for outputting digital latched values; first and second n-FETs connected in a cross-coupled arrangement, with a gate of each of same first and second n-FETs electrically connected to a drain of the other one of the first and second n-FETs, wherein the drain of the first n-FET is connected to the first output, and the drain of the second n-FET is connected to the second output; first and second resistors connected between a voltage source and the first and second outputs, respectively, for pulling up the voltage at the first and second outputs, respectively, when the first and second n-FETs, respectively, are turned off, a node SW having a changing voltage; and circuitry comprising a plurality of n-FETs and inverters connected to the first and second inputs, the first and second outputs, the first and second cross-coupled n- FETs and the node SW, for preventing common mode signals caused by the changing voltage on the node SW from affecting the digital latched values of the first and second outputs, such that the digital latched values on the first and second outputs only change if the digital input values on the first and second inputs are opposite to each other. Previously presented
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in series, wherein a drain of the third n-FET is connected to the gate of the second n-FET, the source of the third n-FET is connected to a drain of the fourth n-FET, and wherein a gate of the fourth n-FET is connected to the first input, and a gate of the third n-FET is connected to an inverse of the second input; and 2 fifth and sixth n-FETs electrically coupled in series, wherein a drain of the fifth n-FET is connected to the gate of the first n-FET, the source of the fifth n- FET is connected to a drain of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input, and a gate of the sixth n-FET is connected to an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in parallel, wherein a drain of the third n-FET is connected to a drain of the fourth n-FET and a source of the third n- FET is connected to a source of the fourth n-FET, and wherein a gate of the third n-FET is connected to the first input, and a gate of the fourth n-FET is connected to an inverse of the second input; and fifth and sixth n-FETs electrically coupled in parallel, wherein a drain of the fifth n-FET is connected to a drain of the sixth n-FET and a source of the fifth n- F ET is connected to a source of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input and a gate of the sixth n-FET is connected an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the circuitry is implemented entirely in GaN. Original
The cross-coupled differential activated latch circuit of claim 1, further comprising a pulse filter at each of the first and second inputs. Original
The cross-coupled differential activated latch circuit of claim 1, wherein the first and second latch inputs are clamped by diode-connected protection n-FETs. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
cross-coupled differential activated latch circuit
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patent
Atlas literature
Patent
US 11,496,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cross-coupled differential activated latch circuit, comprising: first and second inputs for receiving digital input values; first and second outputs for outputting digital latched values; first and second n-FETs connected in a cross-coupled arrangement, with a gate of each of same first and second n-FETs electrically connected to a drain of the other one of the first and second n-FETs, wherein the drain of the first n-FET is connected to the first output, and the drain of the second n-FET is connected to the second output; first and second resistors connected between a voltage source and the first and second outputs, respectively, for pulling up the voltage at the first and second outputs, respectively, when the first and second n-FETs, respectively, are turned off, a node SW having a changing voltage; and circuitry comprising a plurality of n-FETs and inverters connected to the first and second inputs, the first and second outputs, the first and second cross-coupled n- FETs and the node SW, for preventing common mode signals caused by the changing voltage on the node SW from affecting the digital latched values of the first and second outputs, such that the digital latched values on the first and second outputs only change if the digital input values on the first and second inputs are opposite to each other. Previously presented
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in series, wherein a drain of the third n-FET is connected to the gate of the second n-FET, the source of the third n-FET is connected to a drain of the fourth n-FET, and wherein a gate of the fourth n-FET is connected to the first input, and a gate of the third n-FET is connected to an inverse of the second input; and 2 fifth and sixth n-FETs electrically coupled in series, wherein a drain of the fifth n-FET is connected to the gate of the first n-FET, the source of the fifth n- FET is connected to a drain of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input, and a gate of the sixth n-FET is connected to an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in parallel, wherein a drain of the third n-FET is connected to a drain of the fourth n-FET and a source of the third n- FET is connected to a source of the fourth n-FET, and wherein a gate of the third n-FET is connected to the first input, and a gate of the fourth n-FET is connected to an inverse of the second input; and fifth and sixth n-FETs electrically coupled in parallel, wherein a drain of the fifth n-FET is connected to a drain of the sixth n-FET and a source of the fifth n- F ET is connected to a source of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input and a gate of the sixth n-FET is connected an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the circuitry is implemented entirely in GaN. Original
The cross-coupled differential activated latch circuit of claim 1, further comprising a pulse filter at each of the first and second inputs. Original
The cross-coupled differential activated latch circuit of claim 1, wherein the first and second latch inputs are clamped by diode-connected protection n-FETs. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
cross-coupled differential activated latch circuit
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patent
Atlas literature
Patent
US 11,496,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cross-coupled differential activated latch circuit, comprising: first and second inputs for receiving digital input values; first and second outputs for outputting digital latched values; first and second n-FETs connected in a cross-coupled arrangement, with a gate of each of same first and second n-FETs electrically connected to a drain of the other one of the first and second n-FETs, wherein the drain of the first n-FET is connected to the first output, and the drain of the second n-FET is connected to the second output; first and second resistors connected between a voltage source and the first and second outputs, respectively, for pulling up the voltage at the first and second outputs, respectively, when the first and second n-FETs, respectively, are turned off, a node SW having a changing voltage; and circuitry comprising a plurality of n-FETs and inverters connected to the first and second inputs, the first and second outputs, the first and second cross-coupled n- FETs and the node SW, for preventing common mode signals caused by the changing voltage on the node SW from affecting the digital latched values of the first and second outputs, such that the digital latched values on the first and second outputs only change if the digital input values on the first and second inputs are opposite to each other. Previously presented
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in series, wherein a drain of the third n-FET is connected to the gate of the second n-FET, the source of the third n-FET is connected to a drain of the fourth n-FET, and wherein a gate of the fourth n-FET is connected to the first input, and a gate of the third n-FET is connected to an inverse of the second input; and 2 fifth and sixth n-FETs electrically coupled in series, wherein a drain of the fifth n-FET is connected to the gate of the first n-FET, the source of the fifth n- FET is connected to a drain of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input, and a gate of the sixth n-FET is connected to an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in parallel, wherein a drain of the third n-FET is connected to a drain of the fourth n-FET and a source of the third n- FET is connected to a source of the fourth n-FET, and wherein a gate of the third n-FET is connected to the first input, and a gate of the fourth n-FET is connected to an inverse of the second input; and fifth and sixth n-FETs electrically coupled in parallel, wherein a drain of the fifth n-FET is connected to a drain of the sixth n-FET and a source of the fifth n- F ET is connected to a source of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input and a gate of the sixth n-FET is connected an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the circuitry is implemented entirely in GaN. Original
The cross-coupled differential activated latch circuit of claim 1, further comprising a pulse filter at each of the first and second inputs. Original
The cross-coupled differential activated latch circuit of claim 1, wherein the first and second latch inputs are clamped by diode-connected protection n-FETs. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
cross-coupled differential activated latch circuit
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patent
Atlas literature
Patent
US 11,496,134Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cross-coupled differential activated latch circuit, comprising: first and second inputs for receiving digital input values; first and second outputs for outputting digital latched values; first and second n-FETs connected in a cross-coupled arrangement, with a gate of each of same first and second n-FETs electrically connected to a drain of the other one of the first and second n-FETs, wherein the drain of the first n-FET is connected to the first output, and the drain of the second n-FET is connected to the second output; first and second resistors connected between a voltage source and the first and second outputs, respectively, for pulling up the voltage at the first and second outputs, respectively, when the first and second n-FETs, respectively, are turned off, a node SW having a changing voltage; and circuitry comprising a plurality of n-FETs and inverters connected to the first and second inputs, the first and second outputs, the first and second cross-coupled n- FETs and the node SW, for preventing common mode signals caused by the changing voltage on the node SW from affecting the digital latched values of the first and second outputs, such that the digital latched values on the first and second outputs only change if the digital input values on the first and second inputs are opposite to each other. Previously presented
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in series, wherein a drain of the third n-FET is connected to the gate of the second n-FET, the source of the third n-FET is connected to a drain of the fourth n-FET, and wherein a gate of the fourth n-FET is connected to the first input, and a gate of the third n-FET is connected to an inverse of the second input; and 2 fifth and sixth n-FETs electrically coupled in series, wherein a drain of the fifth n-FET is connected to the gate of the first n-FET, the source of the fifth n- FET is connected to a drain of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input, and a gate of the sixth n-FET is connected to an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the plurality of n-FETs comprise: third and fourth n-FETs electrically coupled in parallel, wherein a drain of the third n-FET is connected to a drain of the fourth n-FET and a source of the third n- FET is connected to a source of the fourth n-FET, and wherein a gate of the third n-FET is connected to the first input, and a gate of the fourth n-FET is connected to an inverse of the second input; and fifth and sixth n-FETs electrically coupled in parallel, wherein a drain of the fifth n-FET is connected to a drain of the sixth n-FET and a source of the fifth n- F ET is connected to a source of the sixth n-FET, and wherein a gate of the fifth n-FET is connected to the second input and a gate of the sixth n-FET is connected an inverse of the first input. Currently amended
The cross-coupled differential activated latch circuit of claim 1, wherein the circuitry is implemented entirely in GaN. Original
The cross-coupled differential activated latch circuit of claim 1, further comprising a pulse filter at each of the first and second inputs. Original
The cross-coupled differential activated latch circuit of claim 1, wherein the first and second latch inputs are clamped by diode-connected protection n-FETs. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
cross-coupled differential activated latch circuit
No layer stack recorded.
Materials described outside the worked examples.
GaN