Patent
US 8,183,086DIAMOND GAN DEVICES AND ASSOCIATED METHODS
Chien-Min Sung
2012-05-22·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,183,086Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer c-axis is oriented perpendicular to the working surface of the diamond layer.
The method of claim 1, wherein the buffer layer is a member selected from the group consisting of a carbide, an oxide, a nitride, and combinations thereof, and wherein the buffer layer is domain matched with the diamond layer.
The method of claim 1, wherein the substantially flat surface has an RA that is from about 1 nm to about 10 nm.
The method of claim 1, wherein the semiconductor layer is a member selected from the group consisting of GaN, (B,Al)N, A I N, and combinations thereof.
2 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 8. The method of claim 1, further comprising doping at least one of the diamond layer and the semiconductor layer.
The method of claim 1, wherein the diamond layer is a polycrystalline diamond layer.
canceled
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer is a member selected from the group consisting of TiC, ZrC, graphene, A I N, (B,Al)N, T i N, TaN, ZnO, Ni O, and combinations thereof.
canceled
A method of making a semiconductor device, comprising: depositing a graphene layer on the working surface of a substrate; applying pressure and heat to the graphene layer to facilitate alignment of the graphene layer with at least 50 % of substrate atoms; and depositing a GaN layer on the graphene layer.
The method of claim 10, wherein the substrate is a diamond layer and depositing the graphene layer on the working surface of the diamond layer includes: polishing a working surface of the diamond layer to a substantially flat surface; and applying pressure and heat to the graphene layer to reorganize at least a portion of the diamond layer into a substantially single crystal diamond lattice at the graphene layer interface.
The method of claim 10, wherein the substrate is a member selected from the group consisting of metals, glasses, ceramics, single crystal silicons, polysilicons, semiconductors, and combinations thereof.
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; and growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer, wherein the GaN islands are each less than about 100 nanometers in diameter prior to growing.
The method of claim 13, wherein the GaN islands are each from about 10 nanometers to about 50 nanometers in diameter prior to growing.
The method of claim 13, wherein N from the GaN material aligns along a c-axis orientation perpendicular to the working surface of the diamond layer, and Ga from the GaN material aligns along an A-B axis.
3 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 14. canceled
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer; and heat treating the GaN layer to minimize crystal lattice dislocations.
canceled
A method for making a cubic-lattice semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a GaN material on the buffer layer such that the buffer layer orients the GaN material into a cubic GaN layer.
The method of claim 19, wherein the buffer layer is a carbide or a nitride of a member selected from the group consisting of Ti, Zu, Hf, V, Nb, Ta, and combinations thereof.
The method of claim 19, wherein the buffer layer is T iN.
4 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 22. A diamond semiconductor device, comprising: a p-type doped diamond layer having a polished working surface; a buffer layer disposed on the polished working surface of the diamond layer; and an n-type doped semiconductor layer disposed on the buffer layer; wherein the semiconductor layer is a GaN layer having a cubic lattice orientation.
23-24. canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device on diamond with buffer layer
semiconductor device with graphene buffer on substrate
Materials described outside the worked examples.
diamond layer
C
buffer layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,183,086Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer c-axis is oriented perpendicular to the working surface of the diamond layer.
The method of claim 1, wherein the buffer layer is a member selected from the group consisting of a carbide, an oxide, a nitride, and combinations thereof, and wherein the buffer layer is domain matched with the diamond layer.
The method of claim 1, wherein the substantially flat surface has an RA that is from about 1 nm to about 10 nm.
The method of claim 1, wherein the semiconductor layer is a member selected from the group consisting of GaN, (B,Al)N, A I N, and combinations thereof.
2 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 8. The method of claim 1, further comprising doping at least one of the diamond layer and the semiconductor layer.
The method of claim 1, wherein the diamond layer is a polycrystalline diamond layer.
canceled
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer is a member selected from the group consisting of TiC, ZrC, graphene, A I N, (B,Al)N, T i N, TaN, ZnO, Ni O, and combinations thereof.
canceled
A method of making a semiconductor device, comprising: depositing a graphene layer on the working surface of a substrate; applying pressure and heat to the graphene layer to facilitate alignment of the graphene layer with at least 50 % of substrate atoms; and depositing a GaN layer on the graphene layer.
The method of claim 10, wherein the substrate is a diamond layer and depositing the graphene layer on the working surface of the diamond layer includes: polishing a working surface of the diamond layer to a substantially flat surface; and applying pressure and heat to the graphene layer to reorganize at least a portion of the diamond layer into a substantially single crystal diamond lattice at the graphene layer interface.
The method of claim 10, wherein the substrate is a member selected from the group consisting of metals, glasses, ceramics, single crystal silicons, polysilicons, semiconductors, and combinations thereof.
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; and growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer, wherein the GaN islands are each less than about 100 nanometers in diameter prior to growing.
The method of claim 13, wherein the GaN islands are each from about 10 nanometers to about 50 nanometers in diameter prior to growing.
The method of claim 13, wherein N from the GaN material aligns along a c-axis orientation perpendicular to the working surface of the diamond layer, and Ga from the GaN material aligns along an A-B axis.
3 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 14. canceled
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer; and heat treating the GaN layer to minimize crystal lattice dislocations.
canceled
A method for making a cubic-lattice semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a GaN material on the buffer layer such that the buffer layer orients the GaN material into a cubic GaN layer.
The method of claim 19, wherein the buffer layer is a carbide or a nitride of a member selected from the group consisting of Ti, Zu, Hf, V, Nb, Ta, and combinations thereof.
The method of claim 19, wherein the buffer layer is T iN.
4 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 22. A diamond semiconductor device, comprising: a p-type doped diamond layer having a polished working surface; a buffer layer disposed on the polished working surface of the diamond layer; and an n-type doped semiconductor layer disposed on the buffer layer; wherein the semiconductor layer is a GaN layer having a cubic lattice orientation.
23-24. canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device on diamond with buffer layer
semiconductor device with graphene buffer on substrate
Materials described outside the worked examples.
diamond layer
C
buffer layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,183,086Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer c-axis is oriented perpendicular to the working surface of the diamond layer.
The method of claim 1, wherein the buffer layer is a member selected from the group consisting of a carbide, an oxide, a nitride, and combinations thereof, and wherein the buffer layer is domain matched with the diamond layer.
The method of claim 1, wherein the substantially flat surface has an RA that is from about 1 nm to about 10 nm.
The method of claim 1, wherein the semiconductor layer is a member selected from the group consisting of GaN, (B,Al)N, A I N, and combinations thereof.
2 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 8. The method of claim 1, further comprising doping at least one of the diamond layer and the semiconductor layer.
The method of claim 1, wherein the diamond layer is a polycrystalline diamond layer.
canceled
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer is a member selected from the group consisting of TiC, ZrC, graphene, A I N, (B,Al)N, T i N, TaN, ZnO, Ni O, and combinations thereof.
canceled
A method of making a semiconductor device, comprising: depositing a graphene layer on the working surface of a substrate; applying pressure and heat to the graphene layer to facilitate alignment of the graphene layer with at least 50 % of substrate atoms; and depositing a GaN layer on the graphene layer.
The method of claim 10, wherein the substrate is a diamond layer and depositing the graphene layer on the working surface of the diamond layer includes: polishing a working surface of the diamond layer to a substantially flat surface; and applying pressure and heat to the graphene layer to reorganize at least a portion of the diamond layer into a substantially single crystal diamond lattice at the graphene layer interface.
The method of claim 10, wherein the substrate is a member selected from the group consisting of metals, glasses, ceramics, single crystal silicons, polysilicons, semiconductors, and combinations thereof.
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; and growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer, wherein the GaN islands are each less than about 100 nanometers in diameter prior to growing.
The method of claim 13, wherein the GaN islands are each from about 10 nanometers to about 50 nanometers in diameter prior to growing.
The method of claim 13, wherein N from the GaN material aligns along a c-axis orientation perpendicular to the working surface of the diamond layer, and Ga from the GaN material aligns along an A-B axis.
3 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 14. canceled
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer; and heat treating the GaN layer to minimize crystal lattice dislocations.
canceled
A method for making a cubic-lattice semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a GaN material on the buffer layer such that the buffer layer orients the GaN material into a cubic GaN layer.
The method of claim 19, wherein the buffer layer is a carbide or a nitride of a member selected from the group consisting of Ti, Zu, Hf, V, Nb, Ta, and combinations thereof.
The method of claim 19, wherein the buffer layer is T iN.
4 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 22. A diamond semiconductor device, comprising: a p-type doped diamond layer having a polished working surface; a buffer layer disposed on the polished working surface of the diamond layer; and an n-type doped semiconductor layer disposed on the buffer layer; wherein the semiconductor layer is a GaN layer having a cubic lattice orientation.
23-24. canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device on diamond with buffer layer
semiconductor device with graphene buffer on substrate
Materials described outside the worked examples.
diamond layer
C
buffer layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,183,086Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer c-axis is oriented perpendicular to the working surface of the diamond layer.
The method of claim 1, wherein the buffer layer is a member selected from the group consisting of a carbide, an oxide, a nitride, and combinations thereof, and wherein the buffer layer is domain matched with the diamond layer.
The method of claim 1, wherein the substantially flat surface has an RA that is from about 1 nm to about 10 nm.
The method of claim 1, wherein the semiconductor layer is a member selected from the group consisting of GaN, (B,Al)N, A I N, and combinations thereof.
2 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 8. The method of claim 1, further comprising doping at least one of the diamond layer and the semiconductor layer.
The method of claim 1, wherein the diamond layer is a polycrystalline diamond layer.
canceled
A method of making a semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a semiconductor layer on the buffer layer, wherein the buffer layer is a member selected from the group consisting of TiC, ZrC, graphene, A I N, (B,Al)N, T i N, TaN, ZnO, Ni O, and combinations thereof.
canceled
A method of making a semiconductor device, comprising: depositing a graphene layer on the working surface of a substrate; applying pressure and heat to the graphene layer to facilitate alignment of the graphene layer with at least 50 % of substrate atoms; and depositing a GaN layer on the graphene layer.
The method of claim 10, wherein the substrate is a diamond layer and depositing the graphene layer on the working surface of the diamond layer includes: polishing a working surface of the diamond layer to a substantially flat surface; and applying pressure and heat to the graphene layer to reorganize at least a portion of the diamond layer into a substantially single crystal diamond lattice at the graphene layer interface.
The method of claim 10, wherein the substrate is a member selected from the group consisting of metals, glasses, ceramics, single crystal silicons, polysilicons, semiconductors, and combinations thereof.
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; and growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer, wherein the GaN islands are each less than about 100 nanometers in diameter prior to growing.
The method of claim 13, wherein the GaN islands are each from about 10 nanometers to about 50 nanometers in diameter prior to growing.
The method of claim 13, wherein N from the GaN material aligns along a c-axis orientation perpendicular to the working surface of the diamond layer, and Ga from the GaN material aligns along an A-B axis.
3 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 14. canceled
A method for making a semiconductor device, comprising; polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; depositing a GaN material on the buffer layer to form a plurality of GaN islands; growing the plurality of GaN islands in directions parallel to and perpendicular to the buffer layer to form a GaN layer; and heat treating the GaN layer to minimize crystal lattice dislocations.
canceled
A method for making a cubic-lattice semiconductor device, comprising: polishing a working surface of a diamond layer to a substantially flat surface; depositing a buffer layer on the working surface of the diamond layer; and depositing a GaN material on the buffer layer such that the buffer layer orients the GaN material into a cubic GaN layer.
The method of claim 19, wherein the buffer layer is a carbide or a nitride of a member selected from the group consisting of Ti, Zu, Hf, V, Nb, Ta, and combinations thereof.
The method of claim 19, wherein the buffer layer is T iN.
4 Application Serial No. 12/774,089 Attorney Docket No. 00802-32803.NP 22. A diamond semiconductor device, comprising: a p-type doped diamond layer having a polished working surface; a buffer layer disposed on the polished working surface of the diamond layer; and an n-type doped semiconductor layer disposed on the buffer layer; wherein the semiconductor layer is a GaN layer having a cubic lattice orientation.
23-24. canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device on diamond with buffer layer
semiconductor device with graphene buffer on substrate
Materials described outside the worked examples.
diamond layer
C
buffer layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–10 nm | — |
Thickness | 10–50 nm |
Related documents with shared materials, methods, properties, or citations.
semiconductor device with GaN islands grown on diamond with buffer layer
cubic-lattice semiconductor device
diamond semiconductor device with p-n junction
TiC
graphene
AlN
TiN
TaN
ZnO
NiO
ZrC
(B,Al)N
| — |
Thickness | ≤ 1 nm | — |
semiconductor device with GaN islands grown on diamond with buffer layer
cubic-lattice semiconductor device
diamond semiconductor device with p-n junction
TiC
graphene
AlN
TiN
TaN
ZnO
NiO
ZrC
(B,Al)N
| — |
Thickness | ≤ 1 nm | — |
semiconductor device with GaN islands grown on diamond with buffer layer
cubic-lattice semiconductor device
diamond semiconductor device with p-n junction
TiC
graphene
AlN
TiN
TaN
ZnO
NiO
ZrC
(B,Al)N
| — |
Thickness | ≤ 1 nm | — |
semiconductor device with GaN islands grown on diamond with buffer layer
cubic-lattice semiconductor device
diamond semiconductor device with p-n junction
TiC
graphene
AlN
TiN
TaN
ZnO
NiO
ZrC
(B,Al)N
| — |
Thickness | ≤ 1 nm | — |