Patent
US 8,318,268AA Stacked Graphene-Diamond Hybrid Material by High Temperature Treatment of Diamond and the Fabrication Method Thereof
Jae-Kap LEE
US
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Patent
Atlas literature
Patent
US 8,318,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
A fabrication method for an AA stacked graphene-diamond hybrid material, wherein a diamond matrix is maintained within a temperature range having a stable graphene phase in a hydrogen gas atmosphere such that a surface of the diamond matrix in a certain thickness is converted into AA stacked graphene due to an alternative loss of { 111} lattice planes cut by the surface of the diamond matrix.
The fabrication method of claim 6, wherein the conversion is progressed from the surface of the diamond matrix to an inside thereof.
The fabrication method of claim 6, wherein heat, plasma or a laser is used such that the diamond matrix is maintained within a temperature range in which a graphene phase is stable.
50796 01350796.1 3
Layer stacks claimed or described, ordered top of device to substrate.
AA stacked graphene-diamond hybrid material
Materials described outside the worked examples.
diamond matrix
C
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interplanar spacing AB stacked graphite | 3.35 Angstrom | C |
interplanar spacing pure AA stacked graphene (ideal) | 3.55 Angstrom |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,318,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
A fabrication method for an AA stacked graphene-diamond hybrid material, wherein a diamond matrix is maintained within a temperature range having a stable graphene phase in a hydrogen gas atmosphere such that a surface of the diamond matrix in a certain thickness is converted into AA stacked graphene due to an alternative loss of { 111} lattice planes cut by the surface of the diamond matrix.
The fabrication method of claim 6, wherein the conversion is progressed from the surface of the diamond matrix to an inside thereof.
The fabrication method of claim 6, wherein heat, plasma or a laser is used such that the diamond matrix is maintained within a temperature range in which a graphene phase is stable.
50796 01350796.1 3
Layer stacks claimed or described, ordered top of device to substrate.
AA stacked graphene-diamond hybrid material
Materials described outside the worked examples.
diamond matrix
C
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interplanar spacing AB stacked graphite | 3.35 Angstrom | C |
interplanar spacing pure AA stacked graphene (ideal) | 3.55 Angstrom |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,318,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
A fabrication method for an AA stacked graphene-diamond hybrid material, wherein a diamond matrix is maintained within a temperature range having a stable graphene phase in a hydrogen gas atmosphere such that a surface of the diamond matrix in a certain thickness is converted into AA stacked graphene due to an alternative loss of { 111} lattice planes cut by the surface of the diamond matrix.
The fabrication method of claim 6, wherein the conversion is progressed from the surface of the diamond matrix to an inside thereof.
The fabrication method of claim 6, wherein heat, plasma or a laser is used such that the diamond matrix is maintained within a temperature range in which a graphene phase is stable.
50796 01350796.1 3
Layer stacks claimed or described, ordered top of device to substrate.
AA stacked graphene-diamond hybrid material
Materials described outside the worked examples.
diamond matrix
C
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interplanar spacing AB stacked graphite | 3.35 Angstrom | C |
interplanar spacing pure AA stacked graphene (ideal) | 3.55 Angstrom |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,318,268Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 5. canceled
A fabrication method for an AA stacked graphene-diamond hybrid material, wherein a diamond matrix is maintained within a temperature range having a stable graphene phase in a hydrogen gas atmosphere such that a surface of the diamond matrix in a certain thickness is converted into AA stacked graphene due to an alternative loss of { 111} lattice planes cut by the surface of the diamond matrix.
The fabrication method of claim 6, wherein the conversion is progressed from the surface of the diamond matrix to an inside thereof.
The fabrication method of claim 6, wherein heat, plasma or a laser is used such that the diamond matrix is maintained within a temperature range in which a graphene phase is stable.
50796 01350796.1 3
Layer stacks claimed or described, ordered top of device to substrate.
AA stacked graphene-diamond hybrid material
Materials described outside the worked examples.
diamond matrix
C
hydrogen gas
H₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
interplanar spacing AB stacked graphite | 3.35 Angstrom | C |
interplanar spacing pure AA stacked graphene (ideal) | 3.55 Angstrom |
Related documents with shared materials, methods, properties, or citations.
interplanar spacing diamond {111} lattice plane | 2.06 Angstrom | C |
interplanar spacing graphene at graphene/diamond interface | 4.38 Angstrom | C |
nearest-neighbor bond length in diamond | 1.45 Angstrom | C |
nearest-neighbor bond length in graphene | 1.42 Angstrom | C |
Temperature | ≥ 2000 °C | — |
interplanar spacing diamond {111} lattice plane | 2.06 Angstrom | C |
interplanar spacing graphene at graphene/diamond interface | 4.38 Angstrom | C |
nearest-neighbor bond length in diamond | 1.45 Angstrom | C |
nearest-neighbor bond length in graphene | 1.42 Angstrom | C |
Temperature | ≥ 2000 °C | — |
interplanar spacing diamond {111} lattice plane | 2.06 Angstrom | C |
interplanar spacing graphene at graphene/diamond interface | 4.38 Angstrom | C |
nearest-neighbor bond length in diamond | 1.45 Angstrom | C |
nearest-neighbor bond length in graphene | 1.42 Angstrom | C |
Temperature | ≥ 2000 °C | — |
interplanar spacing diamond {111} lattice plane | 2.06 Angstrom | C |
interplanar spacing graphene at graphene/diamond interface | 4.38 Angstrom | C |
nearest-neighbor bond length in diamond | 1.45 Angstrom | C |
nearest-neighbor bond length in graphene | 1.42 Angstrom | C |
Temperature | ≥ 2000 °C | — |