Valley-dependent electron optics using quantum dots in bilayer graphene | Matter42 Literature
Paper details
Research paper
TheoreticalComputed Raman
Valley-dependent electron optics using quantum dots in bilayer graphene
Fereshte Ildarabadi, Stephen R. Power
arXiv·2026·arXiv:2607.00271
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bernal-stacked bilayer graphene quantum-dot scattering device with layer-antisymmetric electrostatic gating; single-dot and multi-dot architectures analyzed within a four-band continuum model.
Valley-dependent electron optics using quantum dots in bilayer graphene
Fereshte Ildarabadi, Stephen R. Power
arXiv·2026·arXiv:2607.00271
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bernal-stacked bilayer graphene quantum-dot scattering device with layer-antisymmetric electrostatic gating; single-dot and multi-dot architectures analyzed within a four-band continuum model.
Valley-dependent electron optics using quantum dots in bilayer graphene
Fereshte Ildarabadi, Stephen R. Power
arXiv·2026·arXiv:2607.00271
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bernal-stacked bilayer graphene quantum-dot scattering device with layer-antisymmetric electrostatic gating; single-dot and multi-dot architectures analyzed within a four-band continuum model.
Valley-dependent electron optics using quantum dots in bilayer graphene
Fereshte Ildarabadi, Stephen R. Power
arXiv·2026·arXiv:2607.00271
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bernal-stacked bilayer graphene quantum-dot scattering device with layer-antisymmetric electrostatic gating; single-dot and multi-dot architectures analyzed within a four-band continuum model.
Four-band continuum Hamiltonian for AB-stacked bilayer graphene combined with generalized multiple-scattering formalism and partial-wave/Bessel-Hankel mode expansion for Gaussian-beam and plane-wave scattering from single- and multi-dot electrostatic potentials.
Four-band continuum Hamiltonian for AB-stacked bilayer graphene combined with generalized multiple-scattering formalism and partial-wave/Bessel-Hankel mode expansion for Gaussian-beam and plane-wave scattering from single- and multi-dot electrostatic potentials.
Four-band continuum Hamiltonian for AB-stacked bilayer graphene combined with generalized multiple-scattering formalism and partial-wave/Bessel-Hankel mode expansion for Gaussian-beam and plane-wave scattering from single- and multi-dot electrostatic potentials.
Four-band continuum Hamiltonian for AB-stacked bilayer graphene combined with generalized multiple-scattering formalism and partial-wave/Bessel-Hankel mode expansion for Gaussian-beam and plane-wave scattering from single- and multi-dot electrostatic potentials.
