Research paper
Experimental CharacterizationComputational MDTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations3 properties5 figures
3 preparations5 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | contact resistance Rc | 1000–1200ohm·um | — | |||
| PL Peak | dark-branch emission | 3.24eV | — | |||
| PL Peak | hot photoluminescence | 3.33eV | — | |||
| Pl Peak Shift | phonon replica spacing | 160meV | — | |||
| Pl Peak Fwhm | PL peak | 20meV | — | — | — | — |
| Ir Band Position | IR band | 1396cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1617cm⁻¹ | — | — | — | — |
| Ir Band Position | aromatic C=C | 1343cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1310cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Charge to spin conversion in atomically thin bismuth
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Pb-intercalated epitaxial graphene on SiC: Full insight into band structure and orbital character of interlayer Pb, and charge transfer into graphene
Yellow stimulated emission from Dy3+-doped silica glass microspheres
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations3 properties5 figures
3 preparations5 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | contact resistance Rc | 1000–1200ohm·um | — | |||
| PL Peak | dark-branch emission | 3.24eV | — | |||
| PL Peak | hot photoluminescence | 3.33eV | — | |||
| Pl Peak Shift | phonon replica spacing | 160meV | — | |||
| Pl Peak Fwhm | PL peak | 20meV | — | — | — | — |
| Ir Band Position | IR band | 1396cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1617cm⁻¹ | — | — | — | — |
| Ir Band Position | aromatic C=C | 1343cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1310cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Charge to spin conversion in atomically thin bismuth
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Pb-intercalated epitaxial graphene on SiC: Full insight into band structure and orbital character of interlayer Pb, and charge transfer into graphene
Yellow stimulated emission from Dy3+-doped silica glass microspheres
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations3 properties5 figures
3 preparations5 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | contact resistance Rc | 1000–1200ohm·um | — | |||
| PL Peak | dark-branch emission | 3.24eV | — | |||
| PL Peak | hot photoluminescence | 3.33eV | — | |||
| Pl Peak Shift | phonon replica spacing | 160meV | — | |||
| Pl Peak Fwhm | PL peak | 20meV | — | — | — | — |
| Ir Band Position | IR band | 1396cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1617cm⁻¹ | — | — | — | — |
| Ir Band Position | aromatic C=C | 1343cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1310cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Charge to spin conversion in atomically thin bismuth
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Pb-intercalated epitaxial graphene on SiC: Full insight into band structure and orbital character of interlayer Pb, and charge transfer into graphene
Yellow stimulated emission from Dy3+-doped silica glass microspheres
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation8 characterizations3 properties5 figures
3 preparations5 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | contact resistance Rc | 1000–1200ohm·um | — | |||
| PL Peak | dark-branch emission | 3.24eV | — | |||
| PL Peak | hot photoluminescence | 3.33eV | — | |||
| Pl Peak Shift | phonon replica spacing | 160meV | — | |||
| Pl Peak Fwhm | PL peak | 20meV | — | — | — | — |
| Ir Band Position | IR band | 1396cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1617cm⁻¹ | — | — | — | — |
| Ir Band Position | aromatic C=C | 1343cm⁻¹ | — | — | — | — |
| Ir Band Position | IR band | 1310cm⁻¹ | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Charge to spin conversion in atomically thin bismuth
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Pb-intercalated epitaxial graphene on SiC: Full insight into band structure and orbital character of interlayer Pb, and charge transfer into graphene
Yellow stimulated emission from Dy3+-doped silica glass microspheres
Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Interfacial Coupling Controls Molecular Epitaxy of HMTP on Graphene/SiC
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
figure_digitization.json#Figure 3(a)figure_digitization.json#Figure 3(b)figure_digitization.json#Figure 3(c)figure_digitization.json#Figure 5figure_digitization.json#Figure 9figure_digitization.json#Figure 3(a)figure_digitization.json#Figure 3(b)figure_digitization.json#Figure 3(c)figure_digitization.json#Figure 5figure_digitization.json#Figure 9figure_digitization.json#Figure 3(a)figure_digitization.json#Figure 3(b)figure_digitization.json#Figure 3(c)figure_digitization.json#Figure 5figure_digitization.json#Figure 9figure_digitization.json#Figure 3(a)figure_digitization.json#Figure 3(b)figure_digitization.json#Figure 3(c)figure_digitization.json#Figure 5figure_digitization.json#Figure 9