Research paper
TheoreticalComputed Band Structure| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | semimetal-insulator transition gap | 0.39eV | — | |||
| Calculated Band Gap | bilayer band gap | 0.0272eV | — | |||
| Strain | magic strain | 0.019fraction | — | |||
| Optical Band Gap | band gap | 0.39eV | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | semimetal-insulator transition gap | 0.39eV | — | |||
| Calculated Band Gap | bilayer band gap | 0.0272eV | — | |||
| Strain | magic strain | 0.019fraction | — | |||
| Optical Band Gap | band gap | 0.39eV | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | semimetal-insulator transition gap | 0.39eV | — | |||
| Calculated Band Gap | bilayer band gap | 0.0272eV | — | |||
| Strain | magic strain | 0.019fraction | — | |||
| Optical Band Gap | band gap | 0.39eV | — | — | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | semimetal-insulator transition gap | 0.39eV | — | |||
| Calculated Band Gap | bilayer band gap | 0.0272eV | — | |||
| Strain | magic strain | 0.019fraction | — | |||
| Optical Band Gap | band gap | 0.39eV | — | — | — |