Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Electrostatically confined bilayer graphene quantum dot modeled with a smooth gate-defined confinement potential and spatially varying gap profile.
No measurements recorded
SimulatedCStudied Material
Materials
bilayer graphene
C
Studied Material
Also known as
BLG
Variables
stacking= bilayer graphene
studied material
Simulations
Other Computational
Numerical diagonalization of the four-band bilayer graphene Hamiltonian in a localized basis; parameter sweep over dot size, depth, ellipticity, and gap; analysis of valley-dependent orbital magnetic moment and valley g-factor.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Electrostatically confined bilayer graphene quantum dot modeled with a smooth gate-defined confinement potential and spatially varying gap profile.
No measurements recorded
SimulatedCStudied Material
Materials
bilayer graphene
C
Studied Material
Also known as
BLG
Variables
stacking= bilayer graphene
studied material
Simulations
Other Computational
Numerical diagonalization of the four-band bilayer graphene Hamiltonian in a localized basis; parameter sweep over dot size, depth, ellipticity, and gap; analysis of valley-dependent orbital magnetic moment and valley g-factor.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Electrostatically confined bilayer graphene quantum dot modeled with a smooth gate-defined confinement potential and spatially varying gap profile.
No measurements recorded
SimulatedCStudied Material
Materials
bilayer graphene
C
Studied Material
Also known as
BLG
Variables
stacking= bilayer graphene
studied material
Simulations
Other Computational
Numerical diagonalization of the four-band bilayer graphene Hamiltonian in a localized basis; parameter sweep over dot size, depth, ellipticity, and gap; analysis of valley-dependent orbital magnetic moment and valley g-factor.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Electrostatically confined bilayer graphene quantum dot modeled with a smooth gate-defined confinement potential and spatially varying gap profile.
No measurements recorded
SimulatedCStudied Material
Materials
bilayer graphene
C
Studied Material
Also known as
BLG
Variables
stacking= bilayer graphene
studied material
Simulations
Other Computational
Numerical diagonalization of the four-band bilayer graphene Hamiltonian in a localized basis; parameter sweep over dot size, depth, ellipticity, and gap; analysis of valley-dependent orbital magnetic moment and valley g-factor.
Why these are connected
Related documents with shared materials, methods, properties, or citations.
