Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moiré Period | Device I moiré period | 13.4nm | — | |||
| Twist Angle | Device I twist angle | 0.51deg | — | |||
| Moiré Period | Device II moiré period | 8.93nm | — | |||
| Twist Angle | Device II twist angle | 1.29deg | — | |||
| Transport Gap | Insulator I | 2.9meV | — | |||
| Transport Gap | Insulator II | 0.88meV | — | |||
| Transport Gap | CDW state at v = 1/3 | 0.85meV | — | |||
| Transport Gap | CDW state at v = 2/3 | 0.57meV | — | |||
| Transport Gap | Insulating gap at v = 0 | 27.4meV | — |
Ultra-low carrier density superconducting bolometers with single photon sensitivity based on magic-angle twisted bilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moiré Period | Device I moiré period | 13.4nm | — | |||
| Twist Angle | Device I twist angle | 0.51deg | — | |||
| Moiré Period | Device II moiré period | 8.93nm | — | |||
| Twist Angle | Device II twist angle | 1.29deg | — | |||
| Transport Gap | Insulator I | 2.9meV | — | |||
| Transport Gap | Insulator II | 0.88meV | — | |||
| Transport Gap | CDW state at v = 1/3 | 0.85meV | — | |||
| Transport Gap | CDW state at v = 2/3 | 0.57meV | — | |||
| Transport Gap | Insulating gap at v = 0 | 27.4meV | — |
Ultra-low carrier density superconducting bolometers with single photon sensitivity based on magic-angle twisted bilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moiré Period | Device I moiré period | 13.4nm | — | |||
| Twist Angle | Device I twist angle | 0.51deg | — | |||
| Moiré Period | Device II moiré period | 8.93nm | — | |||
| Twist Angle | Device II twist angle | 1.29deg | — | |||
| Transport Gap | Insulator I | 2.9meV | — | |||
| Transport Gap | Insulator II | 0.88meV | — | |||
| Transport Gap | CDW state at v = 1/3 | 0.85meV | — | |||
| Transport Gap | CDW state at v = 2/3 | 0.57meV | — | |||
| Transport Gap | Insulating gap at v = 0 | 27.4meV | — |
Ultra-low carrier density superconducting bolometers with single photon sensitivity based on magic-angle twisted bilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Moiré Period | Device I moiré period | 13.4nm | — | |||
| Twist Angle | Device I twist angle | 0.51deg | — | |||
| Moiré Period | Device II moiré period | 8.93nm | — | |||
| Twist Angle | Device II twist angle | 1.29deg | — | |||
| Transport Gap | Insulator I | 2.9meV | — | |||
| Transport Gap | Insulator II | 0.88meV | — | |||
| Transport Gap | CDW state at v = 1/3 | 0.85meV | — | |||
| Transport Gap | CDW state at v = 2/3 | 0.57meV | — | |||
| Transport Gap | Insulating gap at v = 0 | 27.4meV | — |
Ultra-low carrier density superconducting bolometers with single photon sensitivity based on magic-angle twisted bilayer graphene