Abstract

The paper reports a normal-incidence X-ray standing wave (NIXSW) imaging study of bismuthene/SiC(0001), using element-specific photoelectron yield and reflectivity measurements to reconstruct atomic distributions and determine how hydrogenation changes the Bi adsorption site underneath graphene on 4H-SiC. The authors show that hydrogenation saturates one of the Si dangling bonds per unit cell, driving a structural transition associated with the bismuthene phase and the characteristic electronic structure of the 2D quantum spin Hall material.

Abstract

The paper reports a normal-incidence X-ray standing wave (NIXSW) imaging study of bismuthene/SiC(0001), using element-specific photoelectron yield and reflectivity measurements to reconstruct atomic distributions and determine how hydrogenation changes the Bi adsorption site underneath graphene on 4H-SiC. The authors show that hydrogenation saturates one of the Si dangling bonds per unit cell, driving a structural transition associated with the bismuthene phase and the characteristic electronic structure of the 2D quantum spin Hall material.

Abstract

The paper reports a normal-incidence X-ray standing wave (NIXSW) imaging study of bismuthene/SiC(0001), using element-specific photoelectron yield and reflectivity measurements to reconstruct atomic distributions and determine how hydrogenation changes the Bi adsorption site underneath graphene on 4H-SiC. The authors show that hydrogenation saturates one of the Si dangling bonds per unit cell, driving a structural transition associated with the bismuthene phase and the characteristic electronic structure of the 2D quantum spin Hall material.

Abstract

The paper reports a normal-incidence X-ray standing wave (NIXSW) imaging study of bismuthene/SiC(0001), using element-specific photoelectron yield and reflectivity measurements to reconstruct atomic distributions and determine how hydrogenation changes the Bi adsorption site underneath graphene on 4H-SiC. The authors show that hydrogenation saturates one of the Si dangling bonds per unit cell, driving a structural transition associated with the bismuthene phase and the characteristic electronic structure of the 2D quantum spin Hall material.