Abstract

The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/InxGa1−xAs/GaAs heterostructures using a variational-subband-wave-function model, analyzing key scattering mechanisms: remote impurities (RI), alloy disorder (AD), surface roughness (SR), acoustic (ac) and piezoelectric (PE) phonons, and longitudinal optical (LO) phonons. The mobility ratio R = µfin/µinf reveals distinct trends: RRI and RLO < 1 (long-range Coulomb/inelastic scattering), while RAD, Rac, RPE, RSR > 1 (static potentials). Finite QWs achieve higher mobility at low temperatures (77 K), narrow widths (< 100 ˚A), and low densities, enhanced by high indium content. Conversely, infinite QWs outperform at 300 K due to dominant LO scattering. These findings provide actionable guidelines for optimizing QW-based devices such as HEMTs and lasers across operational regimes.

Abstract

The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/InxGa1−xAs/GaAs heterostructures using a variational-subband-wave-function model, analyzing key scattering mechanisms: remote impurities (RI), alloy disorder (AD), surface roughness (SR), acoustic (ac) and piezoelectric (PE) phonons, and longitudinal optical (LO) phonons. The mobility ratio R = µfin/µinf reveals distinct trends: RRI and RLO < 1 (long-range Coulomb/inelastic scattering), while RAD, Rac, RPE, RSR > 1 (static potentials). Finite QWs achieve higher mobility at low temperatures (77 K), narrow widths (< 100 ˚A), and low densities, enhanced by high indium content. Conversely, infinite QWs outperform at 300 K due to dominant LO scattering. These findings provide actionable guidelines for optimizing QW-based devices such as HEMTs and lasers across operational regimes.

Abstract

The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/InxGa1−xAs/GaAs heterostructures using a variational-subband-wave-function model, analyzing key scattering mechanisms: remote impurities (RI), alloy disorder (AD), surface roughness (SR), acoustic (ac) and piezoelectric (PE) phonons, and longitudinal optical (LO) phonons. The mobility ratio R = µfin/µinf reveals distinct trends: RRI and RLO < 1 (long-range Coulomb/inelastic scattering), while RAD, Rac, RPE, RSR > 1 (static potentials). Finite QWs achieve higher mobility at low temperatures (77 K), narrow widths (< 100 ˚A), and low densities, enhanced by high indium content. Conversely, infinite QWs outperform at 300 K due to dominant LO scattering. These findings provide actionable guidelines for optimizing QW-based devices such as HEMTs and lasers across operational regimes.

Abstract

The geometry of quantum wells (QWs) critically influences carrier mobility, yet systematic comparisons between finite and infinite square QWs remain scarce. We present a comprehensive study of GaAs/InxGa1−xAs/GaAs heterostructures using a variational-subband-wave-function model, analyzing key scattering mechanisms: remote impurities (RI), alloy disorder (AD), surface roughness (SR), acoustic (ac) and piezoelectric (PE) phonons, and longitudinal optical (LO) phonons. The mobility ratio R = µfin/µinf reveals distinct trends: RRI and RLO < 1 (long-range Coulomb/inelastic scattering), while RAD, Rac, RPE, RSR > 1 (static potentials). Finite QWs achieve higher mobility at low temperatures (77 K), narrow widths (< 100 ˚A), and low densities, enhanced by high indium content. Conversely, infinite QWs outperform at 300 K due to dominant LO scattering. These findings provide actionable guidelines for optimizing QW-based devices such as HEMTs and lasers across operational regimes.