Abstract

Shot noise emerges due to the discrete nature of charge transport and provides direct access to the underlying microscopic transport mechanisms governing current flow in mesoscopic conductors. In this work, we demonstrate that quantum shot noise offers a direct and robust fingerprint of Andreev reflection (AR), distinguishing between retro (RAR) and specular (SAR) processes in graphene–superconductor (GS), graphene–superconductor–graphene (GSG), and superconductor–graphene–superconductor (SGS) junctions. At the GS interface, exact reflection amplitudes obtained from full wavefunction matching within the Bogoliubov-de Gennes formalism capture RAR and SAR regimes. The associated Fano factor exhibits distinct Fermi-level-dependent signatures, with RAR suppressing and SAR enhancing the shot noise. Extensions to GSG and SGS configurations reveal how the transmission spectrum and, consequently, the noise profile are modified in the presence of multiple interfaces, coherent quasiparticle interference, and superconducting phase variations. Our findings establish shot noise spectroscopy as a potent and experimentally viable probe for differentiating Andreev reflection types in graphene-based quantum devices, providing complementary insights beyond conventional conductance measurements.

Abstract

Shot noise emerges due to the discrete nature of charge transport and provides direct access to the underlying microscopic transport mechanisms governing current flow in mesoscopic conductors. In this work, we demonstrate that quantum shot noise offers a direct and robust fingerprint of Andreev reflection (AR), distinguishing between retro (RAR) and specular (SAR) processes in graphene–superconductor (GS), graphene–superconductor–graphene (GSG), and superconductor–graphene–superconductor (SGS) junctions. At the GS interface, exact reflection amplitudes obtained from full wavefunction matching within the Bogoliubov-de Gennes formalism capture RAR and SAR regimes. The associated Fano factor exhibits distinct Fermi-level-dependent signatures, with RAR suppressing and SAR enhancing the shot noise. Extensions to GSG and SGS configurations reveal how the transmission spectrum and, consequently, the noise profile are modified in the presence of multiple interfaces, coherent quasiparticle interference, and superconducting phase variations. Our findings establish shot noise spectroscopy as a potent and experimentally viable probe for differentiating Andreev reflection types in graphene-based quantum devices, providing complementary insights beyond conventional conductance measurements.

Abstract

Shot noise emerges due to the discrete nature of charge transport and provides direct access to the underlying microscopic transport mechanisms governing current flow in mesoscopic conductors. In this work, we demonstrate that quantum shot noise offers a direct and robust fingerprint of Andreev reflection (AR), distinguishing between retro (RAR) and specular (SAR) processes in graphene–superconductor (GS), graphene–superconductor–graphene (GSG), and superconductor–graphene–superconductor (SGS) junctions. At the GS interface, exact reflection amplitudes obtained from full wavefunction matching within the Bogoliubov-de Gennes formalism capture RAR and SAR regimes. The associated Fano factor exhibits distinct Fermi-level-dependent signatures, with RAR suppressing and SAR enhancing the shot noise. Extensions to GSG and SGS configurations reveal how the transmission spectrum and, consequently, the noise profile are modified in the presence of multiple interfaces, coherent quasiparticle interference, and superconducting phase variations. Our findings establish shot noise spectroscopy as a potent and experimentally viable probe for differentiating Andreev reflection types in graphene-based quantum devices, providing complementary insights beyond conventional conductance measurements.

Abstract

Shot noise emerges due to the discrete nature of charge transport and provides direct access to the underlying microscopic transport mechanisms governing current flow in mesoscopic conductors. In this work, we demonstrate that quantum shot noise offers a direct and robust fingerprint of Andreev reflection (AR), distinguishing between retro (RAR) and specular (SAR) processes in graphene–superconductor (GS), graphene–superconductor–graphene (GSG), and superconductor–graphene–superconductor (SGS) junctions. At the GS interface, exact reflection amplitudes obtained from full wavefunction matching within the Bogoliubov-de Gennes formalism capture RAR and SAR regimes. The associated Fano factor exhibits distinct Fermi-level-dependent signatures, with RAR suppressing and SAR enhancing the shot noise. Extensions to GSG and SGS configurations reveal how the transmission spectrum and, consequently, the noise profile are modified in the presence of multiple interfaces, coherent quasiparticle interference, and superconducting phase variations. Our findings establish shot noise spectroscopy as a potent and experimentally viable probe for differentiating Andreev reflection types in graphene-based quantum devices, providing complementary insights beyond conventional conductance measurements.