Rashba-Cavity Engineering of Energy Gaps and Spin-Hall Conductivity in Semiconducting Artificial Graphene | Matter42 Literature
Paper details
Research paper
Theoretical
Rashba-Cavity Engineering of Energy Gaps and Spin-Hall Conductivity in Semiconducting Artificial Graphene
Maryam Mansouri, Vram Mughnetsyan, Armen Harutyunyan, Albert Kirakosyan et al.
arXiv·2026·arXiv:2606.01373
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quasi-2D artificial graphene formed by a honeycomb array of high-quality, high-purity InAs/GaAs quantum dots embedded in a far-infrared cavity and subjected to Rashba spin–orbit interaction.
No measurements recorded
SimulatedInAs/GaAs quantum dot artificial grapheneStudied MaterialInAsStudied MaterialGaAsStudied Material
Rashba-Cavity Engineering of Energy Gaps and Spin-Hall Conductivity in Semiconducting Artificial Graphene
Maryam Mansouri, Vram Mughnetsyan, Armen Harutyunyan, Albert Kirakosyan et al.
arXiv·2026·arXiv:2606.01373
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quasi-2D artificial graphene formed by a honeycomb array of high-quality, high-purity InAs/GaAs quantum dots embedded in a far-infrared cavity and subjected to Rashba spin–orbit interaction.
No measurements recorded
SimulatedInAs/GaAs quantum dot artificial grapheneStudied MaterialInAsStudied MaterialGaAsStudied Material
Rashba-Cavity Engineering of Energy Gaps and Spin-Hall Conductivity in Semiconducting Artificial Graphene
Maryam Mansouri, Vram Mughnetsyan, Armen Harutyunyan, Albert Kirakosyan et al.
arXiv·2026·arXiv:2606.01373
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quasi-2D artificial graphene formed by a honeycomb array of high-quality, high-purity InAs/GaAs quantum dots embedded in a far-infrared cavity and subjected to Rashba spin–orbit interaction.
No measurements recorded
SimulatedInAs/GaAs quantum dot artificial grapheneStudied MaterialInAsStudied MaterialGaAsStudied Material
Rashba-Cavity Engineering of Energy Gaps and Spin-Hall Conductivity in Semiconducting Artificial Graphene
Maryam Mansouri, Vram Mughnetsyan, Armen Harutyunyan, Albert Kirakosyan et al.
arXiv·2026·arXiv:2606.01373
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Quasi-2D artificial graphene formed by a honeycomb array of high-quality, high-purity InAs/GaAs quantum dots embedded in a far-infrared cavity and subjected to Rashba spin–orbit interaction.
No measurements recorded
SimulatedInAs/GaAs quantum dot artificial grapheneStudied MaterialInAsStudied MaterialGaAsStudied Material
Constructed a complete basis as the tensor product of the electronic Hilbert space and the photon Fock space; solved the coupled single-particle problem for band structure and spin-Hall conductivity in cylindrical and linear cavities with Rashba spin–orbit interaction.
Settings
systemartificial graphene composed of quasi-2D InAs/GaAs quantum dots
Constructed a complete basis as the tensor product of the electronic Hilbert space and the photon Fock space; solved the coupled single-particle problem for band structure and spin-Hall conductivity in cylindrical and linear cavities with Rashba spin–orbit interaction.
Settings
systemartificial graphene composed of quasi-2D InAs/GaAs quantum dots
Constructed a complete basis as the tensor product of the electronic Hilbert space and the photon Fock space; solved the coupled single-particle problem for band structure and spin-Hall conductivity in cylindrical and linear cavities with Rashba spin–orbit interaction.
Settings
systemartificial graphene composed of quasi-2D InAs/GaAs quantum dots
Constructed a complete basis as the tensor product of the electronic Hilbert space and the photon Fock space; solved the coupled single-particle problem for band structure and spin-Hall conductivity in cylindrical and linear cavities with Rashba spin–orbit interaction.
Settings
systemartificial graphene composed of quasi-2D InAs/GaAs quantum dots