Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii; M. S. Shur; M. Ryzhii; V. Mitin; C. Tang; T. Otsuji

doi:10.1142/s0129156424400238

Paper

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Research paper

TheoreticalComputed Raman

Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

V. Ryzhii, M. S. Shur, M. Ryzhii, V. Mitin et al.

2023·10.1142/s0129156424400238·arXiv:2310.09741

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Modeled graphene-channel FET bolometric detector with h-BN bottom layer and composite h-BN/black-P/h-BN gate barrier layer under THz excitation with phase-shifted source/drain signals.

No measurements recorded

SimulatedCStudied Materialh-BNSubstrate / DielectricPStudied MaterialAlCapping Or Contact

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